45results about How to "Increased radiative recombination rate" patented technology

The invention provides a novel quantum well barrier layer LED epitaxial growth method and an LED epitaxial layer. The method sequentially comprises steps of processing a substrate, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing an n-type AlGaN layer, growing an n-type GaN layer, growing an active layer MQW, growing a P-type AlGaN layer, growing a P-type GaN layer and growing a p-type contact layer. the AlGaN thin layer is grown in a penetrating mode in the middle of the traditional active layer GaN barrier layer, the limiting and expanding ability of the light-emitting layer on electron can be enhanced, the ability of the quantum well to bond electron can be improved, the radiative recombination rate of a hole and electron in the potential well is obviously improved, the internal quantum efficiency is enhanced, and photoelectric properties of the LED device are improved.

The invention discloses a doped silicon quantum dot light emitting diode device which comprises a silicon substrate, a sedimentary silver nanometer particle layer, a plurality of layers of SiNx films, a transparent electricity conducting film AZO layer and an Si3N4 passivation layer. The SiNx films are deposited on a silver nanometer particle structure, are evenly distributed and contain doped silicon quantum dots. The invention further discloses a preparation method of the light emitting diode. The method comprises the steps of utilizing the electroluminescent characteristic of the doped silicon quantum dot-SiNx films to constitute a light emitting active layer of the light emitting diode, and utilizing doping to passivate quantum dots, and enhancing the radiative recombination of an electron hole through a p-n node formed by the doping silicon quantum dot and the silicon substrate. Further, the silver nanometer structure is used for enhancing the strength of electroluminescence, and the doped silicon quantum dot light emitting diode device improves the light emitting efficiency of a light emitting component and is compatible with the traditional CMOS technology.

The invention discloses a preparation method of a strong ultraviolet photoluminescent ZnO ordered nano column. The method comprises the following steps: (1) preparing a ZnO ordered nano column; (2) transferring a graphene film to the upper surface of the ZnO ordered nano column by virtue of wet method transferring, and performing annealing treatment; and (3) carrying out spin-coating Au nano-particles on the surface of the graphene film. According to the ZnO ordered nano column prepared by the method disclosed by the invention, the ultraviolet luminous intensity of the ZnO ordered nano column is greatly improved, and the red light defect luminescence is obviously reduced at the same time; and the preparation method is simple and is low in cost.

The invention discloses a nano-hole LED array chip with an antireflection passivation layer and a preparation method thereof. The LED array chip of the invention is composed of N * N light emitting units, the anode of each light emitting unit is independently led out, and all light emitting units share a cathode; The active region of the luminescent cell has deep nanopores, and the depth of the nanopores exceeds the depth of the quantum well layer. The dielectric thin film layer on the surface of GaN material also has shallow nanopores, and the bottom of nanopores has dielectric thin film. Asthat dielectric passivation lay on the active region is slotted, Combined with soft film nanoimprinting technology, the deep nanopore and the shallow nanopore of the passivation layer can be preparedsimultaneously, the deep nanopore of the active region enhances the radiation recombination rate, and the shallow nanopore of the passivation layer constitutes an antireflective passivation layer, which is beneficial to the escape of photon mode, the light emission efficiency and the modulation bandwidth. In addition, the preparation method of the invention avoids the deep etching process, and hasthe advantages of simple process and high yield.

The invention discloses an ultraviolet LED epitaxial wafer and a preparation method and application thereof. The ultraviolet LED epitaxial wafer comprises an n-type semiconductor layer, an active layer, an electron blocking layer and a p-type semiconductor layer which are sequentially grown in an epitaxial mode; the electron blocking layer is composed of a superlattice structure formed by alternately growing a first sub-layer and a second sub-layer, the first sub-layer is a boron nitride aluminum layer, and the second sub-layer is an aluminum gallium nitride layer. According to the ultravioletLED epitaxial wafer provided by the invention, the electron blocking layer is formed by the boron nitride aluminum layer and the aluminum gallium nitride layer which grow alternately, so the energy level position of a conduction band of the electron blocking layer is higher, the effective barrier height of electrons is improved, and the electrons are effectively prevented from jumping to the p-type semiconductor layer; meanwhile, the hole barrier height of the electron blocking layer and the active region is reduced, and the injection efficiency of the hole injection active layer is remarkably improved; therefore, the radiation recombination rate of the active region can be improved, and the luminous efficiency of the ultraviolet LED is improved.

The invention discloses a ZnO-based nanorod / quantum well composite ultraviolet light-emitting diode and a preparation method thereof. The light-emitting diode comprises a substrate. The substrate is provided with an n-type ZnO thin film layer, a ZnO nanorod array, a ZnO / Zn1-xMgxO quantum well active layer, a p-type NiO thin film layer and a first electrode from the bottom up in sequence. A second electrode and the ZnO nanorod array are arranged on the n-type ZnO thin film layer in parallel; and the ZnO / Zn1-xMgxO quantum well active layer covers the ZnO nanorod array, 0.1<=x<=0.3. The light-emitting diode electroluminescent peak wavelength is around 374 nm, and full width at half maximum of the photoluminescence peak is around 17 nm; the light-emitting diode structure can give full play to the advantages of direct broadband gap and high exciton binding energy of the ZnO material and the like, so that polarization effect is reduced effectively, material and interface quality can be improved, effective area of the active layer is increased, light extraction efficiency is improved and spectrum monochromaticity is improved; and besides, low-temperature preparation can be realized, cost is low and industrialization can be realized easily.

The invention relates to a MicroLED device for inhibiting SRH non-radiative recombination and a preparation method. An epitaxial structure of the device sequentially comprises a substrate, a buffer layer, a first N-type semiconductor material layer and a second N-type semiconductor material layer along an epitaxial growth direction; the second N-type semiconductor material layer is sequentially covered with a multi-quantum well layer, a P-type current blocking layer and a P-type semiconductor material transmission layer; the center of each P-type semiconductor material transmission layer is covered with a P-type heavily doped semiconductor material transmission layer; a non-P-type heavily-doped semiconductor material transmission layer area on each P-type semiconductor material transmission layer is covered with an insulation limiting layer, and the upper surfaces of the insulation limiting layer and the semiconductor material transmission layer are current expansion layers. According to the invention, a better current limiting effect can be realized, SRH non-radiative recombination caused by side wall defects of the MicroLED device is reduced, and hole injection efficiency and external quantum efficiency (EQE) of the device are improved.

The invention discloses a micro-nano composite structure photon integrated chip and a preparation method thereof, and belongs to the technical field of semiconductor photoelectronic devices and integration, a chip uses a nano preparation technology to obtain a nano LED structure, then uses a photoetching technology to obtain an LED device, a waveguide and a photoelectric detector, and uses a deepsilicon etching technology and a nitride back etching technology to obtain the ultrathin silicon substrate suspended micro-nano composite structure photon integrated chip. According to the chip, the nanostructure LED device, the waveguide and the photoelectric detector are integrated on the same chip, light emitted by the nanostructure LED device is laterally coupled into the waveguide, transmitted through the waveguide and detected by the photoelectric detector at the other end of the waveguide, the nanostructure can enhance the modulation bandwidth of an LED and increase the overlapping degree of a light-emitting spectrum of the LED and a response spectrum of the detector, and the high-speed photonic integrated chip is applied to the fields of optical communication and optical sensing.

The invention belongs to the field of semiconductor light emitters, and particularly relates to a method for designing and manufacturing a blue light Mico-LED chip with an inverted structure, which adopts a tunneling junction formed by heavily doped p + + GaN and n + + GaN to limit a current path, reduces contact resistance, improves Si donor and Mg acceptor concentrations, improves the radiativerecombination rate of electron holes, and improves the internal quantum efficiency and the light extraction efficiency. According to the invention, the Micro-LED with an inverted structure is adopted,ITO / DBR is respectively used as the transparent conductive layer and the current blocking layer, photons emitted by the active region are reflected by the DBR and then are emitted into the air from the sapphire substrate, and the light extraction efficiency is improved. And meanwhile, the requirements that the Micro-LED display is small in size and easy to miniaturize are met. And the Micro-LED chip is designed into an inverted structure, so that the photoelectric property and the thermal stability of the chip are improved.

The invention relates to a light-emitting chip epitaxial wafer, a manufacturing method thereof and a light-emitting chip. The active region light-emitting layer of the light-emitting chip epitaxial wafer comprises at least one superlattice, the superlattice comprises a quantum well sub-layer and a stress transformation sub-layer, the stress transformation sub-layer is formed on the quantum well sub-layer and enables the quantum well sub-layer to be transformed from compressive strain to tensile strain, the well width is increased, and the crystal quality is improved; and the stress conversion sub-layer and the quantum well sub-layer form a two-dimensional electron gas, so that more electrons exist in a local area, the carrier density in the thin layer is remarkably improved, the radiation recombination probability is improved, and the luminous efficiency is improved.

The invention provides a preparation method of a pure blue-light perovskite light-emitting layer. The method comprises the following steps: S1, acquiring a perovskite precursor solution which contains halide which is bromide; and S2, coating the perovskite precursor solution on a substrate to form, then adding an anti-solvent solution containing chloride onto the substrate to carry out in-situ halogen ion exchange, and then carrying out post-treatment to obtain the chlorine-bromine mixed pure blue light perovskite luminescent layer. According to the method, the problem of difficult blue shift of a luminescence peak caused by low solubility of chloride ions in a perovskite precursor solution is solved, and the concentration of chloride is adjusted, so that the proportion of chloride ions and bromide ions is adjusted to realize regulation and control of the luminescence peak in a pure blue light wave band; and according to the method, the problem of component segregation caused by preferential crystallization of chlorine-rich perovskite in preparation of mixed halogen perovskite by a traditional solution method is solved, and the distribution uniformity of halide ions in perovskite is improved, so that the spectral stability of a blue-light perovskite light-emitting diode is improved.

The invention relates to the field of semiconductors, in particular to a V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and a preparation method thereof. According to the invention, the GaN-based white-light LED epitaxial structure is composed of a substrate, a nucleation layer, a non-doped GaN layer, an n type GaN layer, a low-temperature n type GaN layerformed on the n type GaN layer, a multi-quantum-well layer formed at the low-temperature n type GaN layer, and a p type GaN filling layer. Lots of V-shaped pits are generated in the low-temperature ntype GaN layer because of the stress releasing and low atomic mobility under a low temperature; after growth of the multi-quantum-well layer, side-wall quantum wells are formed in the V-shaped pits, wherein the light-emitting wavelengths are different from that of the C-surface quantum well; and white light emission is realized by regulating the dimensions and densities of the V-shaped pits reasonably. During the preparation process of the non-fluorescent-powder GaN-based white-light LED, no mask template or inverse etching process is needed and thus the process is simplified. The V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and the preparation method thereof have the broad industrial application prospects.

The invention relates to a method for regulating and controlling an electric field built in an active region of a deep ultraviolet light-emitting diode, which belongs to the technical field of semiconductor photodiodes and sequentially comprises a substrate, a buffer layer, an n-type semiconductor electron injection layer, a multi-quantum well active layer, a p-type electron barrier layer, a p-type semiconductor hole injection layer, a p-type contact layer, a p-type electrode and an n-type electrode from bottom to top. The multi-quantum-well active layer comprises a plurality of units growing periodically, each unit comprises a quantum well and quantum barriers on the upper side and the lower side of the quantum well, Mg doping is carried out on the side, close to the quantum well, of the quantum barrier on the upper side of the quantum well, Si doping is carried out on the side, close to the quantum well, of the quantum barrier on the lower side of the quantum well, each quantum barrier is not fully doped, and Si doping is carried out on the side. The built-in electric field of the DUV LED is regulated and controlled through a selective doping method, the problems of wavelength red shift and efficiency attenuation caused by the overlarge built-in electric field are solved, meanwhile, electron and hole injection of the DUV LED is regulated and controlled, and the photoelectric property of the DUV LED is improved by inhibiting electron leakage and enhancing hole injection.

A luminescence film material contains rare-earth zinc oxide and metal nanoparticles doped in the rare-earth zinc oxide. The general formula of the luminescence film material is Zn1-xRexO:M, wherein x is larger than 0 and less than or equal to 0.05; Re contains at least one element selected from europium (Eu), terbium (Tb), erbium (Er) and dysprosium (Dy); and M contains at least one element selected from aurum (Au), argentums (Ag), platinum (Pt) and palladium (Pd). The mol ratio of the rare-earth zinc oxide to the metal nanoparticles is 1: (2*10-5-1*10-2). The luminescence film material has high luminescent efficiency. The invention also provides a preparation method of the above luminescence film material.

The invention relates to an inverted structure quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode adopts a planar layered multi-film structure andcomprises a substrate, a cathode layer, an electron transport layer, an LB film modification layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layer and an anode layer, wherein the LB film modification layer is an organic polymer film prepared by using an LB film drawing machine, and interface modification is carried out on the electron transport layer / quantum dotlight emitting layer by using the LB film modification layer. The LB film modification layer is an organic polymer film prepared by using an LB film drawing machine, has the advantages of simple preparation method, ordered arrangement of polymer molecules, accurate and controllable film thickness and the like, and can realize the control of the number of layers of the organic polymer LB film by repeating the LB film drawing step. The high-quality LB film is used as an interface modification layer of a device, so that electron injection can be accurately limited, charge balance is further improved, defects at an interface can be passivated, the radiation recombination efficiency is improved, and the performance of the quantum dot light emitting diode is effectively improved.

The invention discloses an ultraviolet LED epitaxial structure, which comprises a substrate, a buffer layer, an n-type AlGaN layer, a multi-quantum well region, a composite structure region and a p-type GaN layer arranged in turn from bottom to top. The composite structure region is composed of an Al<x>Ga<1-x>N concave layer, a p-type Al<y>Ga<1-y>N electron barrier layer and a p-type Al<z>Ga<1-z>Nhole injection layer in turn from bottom to top. By adjusting the Al components of all parts of AlGaN of the composite structure region individually or jointly, the composite structure region obtained not only can reduce the electron leakage in the multi-quantum well region, but also can increase hole injection. The epitaxial structure provided by the invention can enhance radiation recombinationand improve the optical output power of ultraviolet LED.

The invention relates to a self-pulse and continuous output type silicon-based integrated semiconductor laser based on Fano resonance and a preparation method of the self-pulse and continuous output type silicon-based integrated semiconductor laser. The laser comprises a substrate, and a Bragg reflector, a first tapered waveguide, III-V group multi-quantum well active regions, a second tapered waveguide and a Fano reflector which are sequentially arranged on the substrate from left to right. The Fano reflector comprises a straight waveguide and a micro-ring waveguide; the micro-ring waveguide is covered with graphene to form saturated absorption; a partial transmission unit is designed in a coupling area of a micro-ring waveguide and a straight waveguide, Fano resonance is generated, two working modes of self-pulse and continuity in a 1550nm optical communication C wave band are realized, and the laser can be suitable for multiple application scenes. Under continuous output, the central wavelength is 1550nm, and the single-mode characteristic is good; in the self-pulse mode, as the current increases, the pulse repetition rate reaches GHz, and the high pulse repetition rate is achieved. The preparation method is compatible with a conventional process and is suitable for low-cost efficient preparation.

The embodiment of the invention provides an ultraviolet LED and a manufacturing method thereof. The LED comprises a substrate, a buffer layer, a current spreading layer, a multi-quantum well active layer and a superlattice electron blocking layer; and the multi-quantum well active layer comprises quantum barrier structures and quantum well structures. Each quantum barrier structure comprises a first quantum barrier layer, a second quantum barrier layer and a third quantum barrier layer; the Al component of the second quantum barrier layer is higher than the Al components of the first quantum barrier layer and the third quantum barrier layer, so that the Al component in the quantum barrier structure is step-shaped, and therefore, a high barrier is formed by using the relatively high Al component of the second quantum barrier layer, and a strong electronic block effect can be realized; the lower Al components of the first quantum barrier layer and the third quantum barrier layer are utilized to reduce the stress between the quantum barrier structure and the quantum well structure, so that a polarization electric field in the multi-quantum well active layer can be weakened, and therefore, the radiation recombination rate of the multi-quantum well active layer can be improved, and the luminous power of the ultraviolet LED can be improved.

The invention relates to a light-emitting diode based on an N-type doped stack and a functional layer. The light-emitting diode comprises a substrate layer, a buffer layer located on the substrate layer, an N-type semiconductor layer located on the buffer layer, an N-type doped laminated layer located on the N-type doped layer, a quantum well light-emitting layer located on the N-type doped laminated layer, a functional layer located on the quantum well light-emitting layer, a P-type doped layer located on the functional layer, and a P-type semiconductor layer located on the P-type doped layer, wherein and the N-type doped laminated layer comprises a plurality of first N-type doped layers and a plurality of second N-type doped layers; and the functional layer comprises an electron blockinglayer, a first hole injection layer and a second hole injection layer. The light-emitting diode provided by the invention is provided with the N-type doped laminated layer, so that the migration rateof electrons can be reduced, and the probability of radiative recombination between holes and electrons in the quantum well light-emitting layer can be improved by adjusting the rate of the electronsmigrated to the quantum well light-emitting layer, so that the light emitting efficiency of the light-emitting diode is improved.

The invention relates to an aluminum-gallium-nitrogen-based ultraviolet LED epitaxial structure and an ultraviolet LED lamp. The aluminum-gallium-nitrogen-based ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, a first aluminum-gallium-nitrogen layer, a light-emitting layer and a second aluminum-gallium-nitrogen layer which are sequentially arranged in a stacked mode. Thesecond aluminum-gallium-nitrogen layer comprises a plurality of second aluminum-gallium-nitrogen sub-layers which are sequentially stacked, the aluminum components of the plurality of second aluminum-gallium-nitrogen sub-layers are different, and the aluminum components of second aluminum-gallium-nitrogen sub-layers connected with the light-emitting layer are greater than that of other second aluminum-gallium-nitrogen sub-layers. An aluminum component of a second aluminum-gallium-nitrogen sub-layer close to the light-emitting layer is maximum, an aluminum component of a second aluminum-gallium-nitrogen sub-layer away from the light-emitting layer is minimum, a built-in electric field of the second aluminum-gallium-nitrogen layer is weakened by the second aluminum gallium nitride sub-layerswith different components such that the piezoelectric polarization effect between the second aluminum-gallium-nitrogen layer and the light-emitting layer is weakened, the effective injection rate ofholes is improved, the radiative recombination rate of electrons and the holes is improved, and the internal quantum rate and the light-emitting rate of the aluminum-gallium-nitrogen-based ultravioletLED epitaxial structure are improved.

The invention discloses a ZnO-based nanorod / quantum well composite ultraviolet light-emitting diode and a preparation method thereof. The light-emitting diode comprises a substrate. The substrate is provided with an n-type ZnO thin film layer, a ZnO nanorod array, a ZnO / Zn1-xMgxO quantum well active layer, a p-type NiO thin film layer and a first electrode from the bottom up in sequence. A second electrode and the ZnO nanorod array are arranged on the n-type ZnO thin film layer in parallel; and the ZnO / Zn1-xMgxO quantum well active layer covers the ZnO nanorod array, 0.1<=x<=0.3. The light-emitting diode electroluminescent peak wavelength is around 374 nm, and full width at half maximum of the photoluminescence peak is around 17 nm; the light-emitting diode structure can give full play to the advantages of direct broadband gap and high exciton binding energy of the ZnO material and the like, so that polarization effect is reduced effectively, material and interface quality can be improved, effective area of the active layer is increased, light extraction efficiency is improved and spectrum monochromaticity is improved; and besides, low-temperature preparation can be realized, cost is low and industrialization can be realized easily.

The invention discloses a deep ultraviolet light-emitting diode based on an electronic buffer and a manufacturing method thereof. The deep ultraviolet light-emitting diode comprises: a substrate, a buffer layer epitaxially grown on the substrate, an n-type semiconductor layer, and an electronic buffer , active layer, p-type semiconductor layer and contact layer, wherein, the electron buffer is non-doped B x Al 1‑x N-layer and n-type Al y Ga 1‑y A multi-period composite structure in which N layers are alternately grown, and the last grown non-doped B in the multi-period composite structure x Al 1‑x The N layer is in contact with the first barrier layer in the active layer. The invention can significantly improve the hole injection in the active area of ​​the diode, effectively alleviate the electron leakage, increase the radiation recombination rate in the active area, and thereby improve the luminous efficiency of the ultraviolet LED.

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. A multi-quantum-well layer of the gallium nitride-based light-emitting diode epitaxial wafer comprises a plurality of quantum well layers and quantum barrier layers, wherein the quantum well layers and the quantum barrier layers are alternately grown, and each quantum well layer comprises a plurality of layers of InxGa1-xN quantum well sub-layers, wherein the In content in the plurality of layers of quantum well sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; each quantum barrier layer comprises multiple layers of Si-doped ByGa1-yN quantum barrier sub-layers, wherein the B content in the plurality of layers of quantum barrier sub-layers is gradually increased and then gradually decreased layer by layer along the stacking direction of the epitaxial wafer; and x is greater than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1. According to the gallium nitride-based light-emitting diode epitaxial wafer provided by the invention, the distribution uniformity of electrons in the quantum wells can be improved, so that the radiation recombination rate of electrons and holes in the multi-quantum wells is improved, and the luminous efficiency of the LED is further improved.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, wherein the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layerare stacked on the substrate. The active layer comprises n quantum wells and (n+1) quantum barriers, wherein n is an integer which is not less than two. The n quantum wells and (n+1) quantum barriersare alternately stacked, and each quantum well is an indium gallium nitride layer. The quantum barrier which is the closest to the N-type semiconductor layer is a gallium nitride layer, and all otherquantum barriers are of composite structures. The composite structures of the quantum barriers between all adjacent quantum wells each include a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer and a fifth sub-layer, wherein the first sub-layer and the fifth sub-layer are gallium nitride layers, the second sub-layer is an aluminum gallium nitride layer, and the third sub-layer is an N-type doped gallium nitride layer, and the fourth sub-layer is an indium gallium nitride layer. The epitaxial wafer can improve the luminous efficiency of an LED.

The invention discloses a GaN-based LED epitaxial structure capable of improving the carrier injection efficiency, and a growth method thereof. A light-emitting layer is formed by barrier layers and quantum well layers alternately, the last barrier layer adopts an Al component, namely an AlxGa1-xN barrier layer with x value gradually changing from 0 to 0.15, other barrier layers are GaN barrier layers, a sub-well layer adopts an InyGa1-yN quantum well layer, and y is 0.1 to 0.3. According to the invention, the growth of the AlGaN electron barrier layer is removed, the improvement of a hole barrier caused by p-type Mg doped AlGaN can be reduced, the serious lattice defect and large stress caused by the growth of the AlGaN and the high-temperature damage of the high-temperature growth condition of the AlGaN to a light-emitting layer structure are reduced, the chip quality is improved, and the AlxGa1-xN barrier layer with gradually changed Al components is adopted, the effect of effectively improving the electron potential barrier can still be achieved, meanwhile, the hole potential barrier can be effectively reduced, electron leakage is restrained, and the hole injection capacity isfurther improved, so the effective radiation recombination rate in the light-emitting layer is increased, and the light-emitting efficiency of the GaN-based LED is improved.

The invention discloses an Si-substrate LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device with a special crystal structure and a preparation method for the device. The epitaxial wafer comprises an Si substrate and an epitaxial layer positioned on the surface of the Si substrate; and the epitaxial layer comprises an AlN / AlGaN buffer layer, an non-intentional-doped U-shaped GaN layer, an Si-doped N type GaN layer, an InGaN / Gan multiple-quantum well luminous layer, an electronic battier layer and an Mg-doped P type GaN layer from the bottom up in sequence. According to the epitaxial wafer, the internal quantum efficiency is improved, the piezoelectric polarization electric field is reduced and the wave function alternation of electrons and holes is increased, so that the radiation recombination probability is improved, and the internal quantum efficiency is further improved.

The invention belongs to the field of photoelectronic devices, specifically a method for improving the light-emitting efficiency of an LED based on the 3D printing of a ferromagnetic layer. The method employs an MOCVD or MBE growth epitaxial wafer which is provided with a nucleating layer, an unintentionally doped layer, an n-type layer, a multi-cycle quantum well active layer and a p-type layer, etches an n-type layer table surface, and carries out 3D printing of an ohmic contact reflector, an n-type electrode, a p-type electrode, a ferromagnetic material layer, and a ferromagnetic material protection layer. The method improves the light-emitting efficiency of the LED through employing the 3D printing of the ferromagnetic layer. A magnetic field generated by the ferromagnetic material layer acts on a multi-quantum-well active region, can enable carriers to be limited in an In-abundant region, and improves the radiative recombination rate of carriers, thereby improving the light-emitting efficiency. Moreover, the 3D printing is simple in production process, and can effectively improve the production efficiency.