The invention provides a deep ultraviolet LED epitaxial structure, a preparation method thereof, and a deep ultraviolet LED. The deep ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron barrier layer, a P-type AlGaN layer and a P-type GaN layer, wherein the buffer layer, the N-type AlGaN layer, the multi-quantum well structure, the electron barrier layer, the P-type AlGaN layer and the P-type GaN layer are sequentially laminated upwards from the substrate. The P-type AlGaN layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the first sub-layer is P-type Al<x>Ga<1-x>N layer; the second sub-layer comprises non-doped Al<y>Ga<1-y>N layers and doped Al<y>Ga<1-y>N layers, which are stacked alternately, wherein the number of alternation times is greater than or equal to 1; the third sub-layer is P-type Al<z>Ga<1-z>N layer, wherein 1>x>y>z>0. According to the deep ultraviolet LED epitaxial structure provided by the invention, the luminous efficiency and the internal quantum efficiency of the ultraviolet LED are improved by changing the structure of the P-type AlGaN layer, so that the performance of the ultraviolet LED is improved.