6results about How to "Strong blocking ability" patented technology

The invention discloses a crystal compound, a preparation method thereof and application of the crystal compound in X-ray detection, imaging and anti-counterfeiting encryption, and belongs to the technical field of crystals. The molecular formula of the crystal compound is [Cu (totp) (CH3CN) 3] [Cu2I3 (totp) (PN)]. (CH3CN), wherein totp is tris (o-tolyl) phosphine; and PN is diphenyl-2-pyridine phosphine. The crystal compound disclosed by the invention is simple in preparation method, and has the characteristics of large mass attenuation coefficient of X-ray energy, high light yield and low detection limit when being used as a material of an X-ray detector. The compound also has the characteristic of structural transformation in solvents such as methanol, ethanol, acetone, dichloromethane, tetrahydrofuran and the like, and meanwhile, the conversion of luminescence color under the excitation of 365nm ultraviolet light and X rays is accompanied. The material can be applied to the aspects of scintillator materials, room-temperature X-ray radiation indirect detection materials, radiation detection dosimeters, X-ray scintillator medical imaging, anti-counterfeiting encryption and the like.

The application discloses a gelatinous material prepared by using industrial waste residues and used for oilfield water layer plugging, a preparation method and a water plugging cement slurry, and relates to the technical field of oilfield water plugging materials. The gelatinous material is composed of 25-40 parts of superfine siliceous material, 50-65 parts of superfine calcareous material, 4-8 parts of superfine silico-aluminous material, 1-2 parts of nano calcium silicate, 2-4 parts of superfine expanding agent and 1-3 parts of starch density stabilizer in terms of weight percentage. The application solves the technical problems of low plugging strength, poor plugging effect, poor durability and high cost of the existing water plugging materials, and meets the oilfield water layer plugging requirements of different working conditions.

The invention discloses an amine organic compound and an organic light-emitting device comprising the same, and belongs to the technical field of organic light-emitting materials, the structure of the amine organic compound is shown in the general formula (1), the amine organic compound has excellent hole mobility and exciton blocking capacity under high current density, and the organic light-emitting device can be applied to the field of organic light-emitting devices. When the amine organic compound is used for forming a light-emitting auxiliary layer material of the organic electroluminescent device, the efficiency of the device is improved, and the service life of the device is prolonged.

The application discloses an Hf-Ta-Si / (Hf,Zr)B2 layered composite ultrahigh-temperature protective coating which is composed of a TaSi2 bottom layer, a ceramic layer surface layer with (Hf,Zr)B2 ultrahigh-temperature ceramic as a main phase and a Ta5Si3 interface reaction layer located at the interface between the substrate and the TaSi2 bottom layer, and the interface between each layer is an in-situ reaction autogenous interface; the coating is obtained by prepositioning the slurry of raw material powder on the surface of a tantalum alloy, drying, and then vacuum reaction sintering in one step; the coating has excellent ultrahigh-temperature oxidation resistance, heat scouring resistance and thermal shock resistance, and can effectively protect the tantalum alloy material under the conditions of oxygen, heat scouring and strong thermal shock at 1000 DEG C to 1800 DEG C; the method can reduce the adverse effects of the melting and sintering process on the microstructure and mechanical properties of the tantalum alloy, avoid the problem of preparing the ultrahigh-temperature ceramic coating on the surface of a tantalum alloy with a complex shape, and has higher coating deposition efficiency and lower cost.

This invention discloses a high-strength, high-conductivity copper-silver alloy for communication connectors and its preparation method, belonging to the technical field of copper alloy materials. The process includes: S1 melting and casting, the alloy containing Ag and one or more of the amplitude modulation decomposition inducing elements Ni, Co, Al, Ti, and Fe; S2 homogenization treatment; S3 cooling at 10-50℃ / h to 350-550℃ and holding for 2-24h to induce amplitude modulation decomposition and form a nanoscale periodic amplitude modulation structure; S4 cold deformation processing; S5 multi-stage gradient aging: holding at 200-350℃ for 1-5h, heating at 5-20℃ / h to 400-500℃ and holding for 2-8h, cooling at ≤10℃ / h to 300-350℃ and holding for 4-12h to form a periodically arrayed coherent nano-precipitated phase; S6 preparing an inner self-lubricating plating layer and an outer protective coating. This invention guides the orderly growth of precipitates using an amplitude-modulated template, resulting in an alloy with tensile strength ≥470MPa, conductivity ≥89%IACS, elongation ≥6%, and excellent high-temperature stability, making it suitable for connectors used in extreme environments such as 5G communication and deep space exploration.

The invention discloses a semiconductor structure and a corresponding chip and product. The structure comprises a silicon-based integrated circuit and a bump structure arranged on the silicon-based integrated circuit. The bump structure sequentially comprises a UBM layer, a copper conductor layer, a nickel conductor layer and a gold conductor layer. The exposed side walls of the UBM layer, the copper conductor layer and the nickel conductor layer are coated with a metal protection layer composed of palladium, palladium alloy, platinum or platinum alloy, and the protection layer does not cover the gold conductor layer. According to the preparation method, the step-shaped side wall is formed through etching steps in a specific sequence, selective self-growth of the protective layer on the titanium / copper / nickel side wall is achieved through chemical plating based on metal equilibrium potential difference, and the protective layer is not deposited on the gold surface. The problems of poor welding and short circuit caused by oxide generated by side wall oxidation and copper diffusion of the copper-nickel-gold bump are effectively solved, the long-term reliability is remarkably improved, meanwhile, the using amount of precious metal is small, the technology is ingenious, and the method is particularly suitable for the high-end display field of liquid crystal driving chips and the like.