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Ultraviolet LED and preparation method thereof

A UV and quantum barrier technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous power of purple LEDs

Inactive Publication Date: 2020-06-09
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Due to its unique physical and chemical characteristics, ultraviolet LEDs have important applications in industrial curing, sterilization, environmental monitoring, etc., but the luminous power of existing purple LEDs is low

Method used

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  • Ultraviolet LED and preparation method thereof
  • Ultraviolet LED and preparation method thereof
  • Ultraviolet LED and preparation method thereof

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Embodiment Construction

[0048] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0049] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0050] As described in the background art section, the luminous power o...

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Abstract

The embodiment of the invention provides an ultraviolet LED and a manufacturing method thereof. The LED comprises a substrate, a buffer layer, a current spreading layer, a multi-quantum well active layer and a superlattice electron blocking layer; and the multi-quantum well active layer comprises quantum barrier structures and quantum well structures. Each quantum barrier structure comprises a first quantum barrier layer, a second quantum barrier layer and a third quantum barrier layer; the Al component of the second quantum barrier layer is higher than the Al components of the first quantum barrier layer and the third quantum barrier layer, so that the Al component in the quantum barrier structure is step-shaped, and therefore, a high barrier is formed by using the relatively high Al component of the second quantum barrier layer, and a strong electronic block effect can be realized; the lower Al components of the first quantum barrier layer and the third quantum barrier layer are utilized to reduce the stress between the quantum barrier structure and the quantum well structure, so that a polarization electric field in the multi-quantum well active layer can be weakened, and therefore, the radiation recombination rate of the multi-quantum well active layer can be improved, and the luminous power of the ultraviolet LED can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor optoelectronics, in particular to an ultraviolet LED and a preparation method thereof. Background technique [0002] In recent years, III-V nitrides, due to their direct bandgap semiconductor properties, have excellent physical properties such as large forbidden band width, high breakdown electric field, and high electron saturation mobility, and have received extensive attention in the fields of electronics and optics. Among them, blue and white light-emitting diodes based on GaN as the main material have achieved higher efficiency than any conventional light source, and are widely used in various emerging industries. [0003] Due to its unique physical and chemical characteristics, ultraviolet LEDs have important applications in industrial curing, sterilization, and environmental monitoring. However, the luminous power of existing ultraviolet LEDs is relatively low. Contents of...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/00H01L33/14H01L33/32
CPCH01L33/007H01L33/06H01L33/145H01L33/325
Inventor 万志卓祥景蔺宇航尧刚程伟
Owner XIAMEN CHANGELIGHT CO LTD
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