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Nano-column ultraviolet LED and preparation method and application thereof

A nano-column and ultraviolet technology, applied in nanotechnology, electrical components, circuits, etc., can solve the problems of low quantum efficiency and power of UV-LED, wide band gap of AlGaN material, and restrictions on the application of ultraviolet LED, so as to improve the light extraction efficiency , reduce light energy loss, and reduce the effect of quantum confinement Stark effect

Pending Publication Date: 2018-09-04
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] However, compared with LEDs in the blue-green light band, the quantum efficiency and power of UV-LEDs are generally low, which has become a bottleneck for its industrialization.
This is mainly due to two reasons. First, UV LEDs generally use AlGaN as the light-emitting layer in the active region, but it is very difficult to prepare high-quality AlGaN materials. On the one hand, there is a serious lattice mismatch in the material during the epitaxial growth process. , The reactions that occur are complex and difficult to control. On the other hand, the AlGaN material has a wide band gap, and there are physical problems such as low doping and activation efficiencies.
In addition, there is also a problem of sharp drop in efficiency in LEDs. When the LED is working at a small current, the efficiency will soon become saturated with the increase of the current, and the luminous efficiency will drop sharply if the injection current is further increased. , the sharp drop in efficiency of this LED is generally called the quantum-confined Stark phenomenon, which is mainly caused by the piezoelectric polarization in the quantum well, and the piezoelectric polarization effect in the AlGaN quantum well is more Strong, it limits the luminous power of ultraviolet light-emitting diodes, restricting the application of ultraviolet LEDs in many aspects

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  • Nano-column ultraviolet LED and preparation method and application thereof

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Embodiment 1

[0040] like figure 1 As shown, the nano-column ultraviolet LED of this embodiment includes a Si substrate 1, a pre-laid Al layer 2, an AlN layer 3, an AlGaN layer 4, a u-GaN layer 5, an n-GaN layer 6, and a quantum well from bottom to top. 7. p-GaN8.

[0041] The preparation method of described nanocolumn ultraviolet LED, comprises the following steps:

[0042] 1) Place the Si substrate in MOCVD, and epitaxially layer a pre-coated Al layer with a thickness of 3nm on the substrate: the substrate temperature is 900°C, the reaction chamber pressure is 50Torr, the rotation speed of the graphite disk is 1200r / min, and the TMAl The flow rate is 300sccm;

[0043] 2) A layer of AlN nucleation layer (AlN layer) with a thickness of 300nm is grown on the pre-coated Al layer obtained in step (1): the substrate temperature is 1200°C, the reaction chamber pressure is 60Torr, and the rotation speed of the graphite disk is 1200r / min , the flow rate of TMAl is 350sccm, NH 3 The flow rate i...

Embodiment 2

[0056] The nano-column ultraviolet LED of this embodiment includes a Si substrate, a pre-coated Al layer, an AlN layer, an AlGaN layer, a u-GaN layer, an n-GaN layer, a quantum well, and a p-GaN layer from bottom to top.

[0057] The preparation method of described nanocolumn ultraviolet LED, comprises the following steps:

[0058] 1) Place the Si substrate in MOCVD, and epitaxially layer a pre-coated Al layer with a thickness of 3nm on the substrate: the substrate temperature is 900°C, the reaction chamber pressure is 50Torr, the rotation speed of the graphite disk is 1200r / min, and the TMAl The flow rate is 300sccm;

[0059] 2) A layer of AlN nucleation layer (AlN layer) with a thickness of 300nm is grown on the pre-coated Al layer obtained in step (1): the substrate temperature is 1200°C, the reaction chamber pressure is 60Torr, and the rotation speed of the graphite disk is 1200r / min , the flow rate of TMAl is 350sccm, NH 3 The flow rate is 15slm;

[0060] 3) Grow a 600...

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Abstract

The invention belongs to the technical field of a semiconductor and discloses a nano-column ultraviolet LED and a preparation method and application thereof. The preparation method is characterized byarranging a layer of nano-silicon dioxide particles on the surface of an ultraviolet LED epitaxial wafer; and then, with the nano-silicon dioxide particles being a mask, carrying out etching on the ultraviolet LED epitaxial wafer to form a nano-column structure, and obtaining a nano-column ultraviolet LED. The nano-column ultraviolet LED comprises a substrate, a pre-paved Al layer, a AlN layer, aAlGaN layer, a u-GaN layer, an n-GaN layer, quantum well nano-columns and p-GaN nano-columns from the bottom up in sequence. The nano-column ultraviolet LED helps to release the stress of an LED quantum well, reduces the quantum-confined stark effect and enhances LED device performance; and besides, the preparation method is simple and feasible, omitting complex steps and cost in preparing the mask, and can adjust the size of the nano-columns through SiO2 in different particle sizes.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a nanocolumn ultraviolet light-emitting diode (LED) and a preparation method and application thereof. The nanocolumn LED of the present invention is used in the fields of LED, LD, photodetector, solar battery and the like. Background technique [0002] With the rapid development of LED technology, the light-emitting bands of LEDs from green light to ultraviolet light have been widely used in commercial products. People have shifted their research focus to it, and it has also become a new hotspot of research and investment in the same industry around the world. Due to its small size, simple structure, high speed, adjustable wavelength, high energy, long service life, energy saving, and environmental protection, ultraviolet LEDs are widely used in white light solid-state lighting, optical storage, ink printing, water and air purification, biomedicine, Widely us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/00B82Y40/00
CPCH01L33/007H01L33/12B82Y40/00
Inventor 李国强李媛王文樑阳志超
Owner SOUTH CHINA UNIV OF TECH
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