96results about How to "Increase luminous power" patented technology

An organic light emitting device (OLED) is presented that includes: signal lines formed on a substrate; thin film transistors formed on the substrate and electrically connected to the signal lines; a first passivation layer having a concavo-convex surface; a first electrode formed on the first passivation layer; a partition formed on the first electrode and having an opening extending to the first electrode; a light emitting member formed in the opening and covered by a second electrode. The refractive indices of the light emitting member and the first passivation layer are different, and the refractive indices of the first passivation layer and the first electrode are different. The concavo-convex surface increases the luminescent surface area without decreasing the opening size, thereby enhancing the luminous power per unit pixel electrode. Forming an interface of materials whose refractive indices differ by at last 0.2 within the OLED increases light extraction efficiency.

A laser machining method includes A) generating, by a laser source, a laser beam having an initial wavelength between 700 and 1200 nanometers of laser pulses; B) doubling frequency of one part of the laser beam by a non-linear crystal; C) varying power throughout each emitted laser pulse so that the power profile has a maximum peak power or part of the pulse with a maximum power in an initial sub-period, and throughout an intermediate sub-period of longer duration than the initial sub-period, a lower power than the maximum power. The maximum power value is at least two times higher than the mean power throughout the laser pulse and an increase time to maximum power from a start of each laser pulse is less than 0.3 milliseconds. The machining method can concern welding highly reflective metals, copper, gold, silver, or an alloy including one of these metals.

The invention discloses a UV light emitting diode with a compound electronic barrier layer structure. The light emitting diode, successively from the bottom to the top, includes a substrate (101), a low-temperature AlN nucleation layer (102), a high-temperature AlN buffer layer (103), an n type AlGaN layer (104), an Al<x>Ga<1-x>N / Al<y>Ga<1-y>N multi-quantum well active region (105), and a p-AlsIntGa1-s-tN / p-AlzGa1-zN compound electronic barrier layer (106) consisting of a p-Al<s>In<t>Ga<1-s-t> layer (106) and a p-Al<z>Ga<1-z>N layer. The diode provided can solve the problem that a conventional electronic barrier layer structure generates a parasitic electronic inversion layer between the last quantum well barrier and an electronic barrier layer.

The invention is a manufacturing method for gallium nitride base brightening dioxide N type ohm contact electrode. It includes following steps: 1)etches out circle or rectangular or any shape hole whose diameter or side length is less than 50 um on the N electrode area of designed pipe core with dry etching method or humidity corroding method on the extension structure of gallium nitride base brightening dioxide on the sapphire substrate, etches to the N type contact layer; 2) produces a layer of P type transparent electrode on P type gallium nitride layer; 3) evaporates insulating film such as silicon dioxide or silicon nitride on the sample; 4) corrodes off the insulating film on N type layer etched or corroded with the photoetching method or corrosion method, and exposes N type layer, maintains the insulating film whose diameter or side length is about 100 um on the platform or side walls of the hole; 5) finally uses photoetching and evaporation or spattering method to produce N electrode, forms the gallium nitride base brightening dioxide N type ohm contact electrode.

The invention discloses an illuminating light source device and a sampling and controlling method. The illuminating light source device comprises a laser component, a coupling mirror and a single-core light-guide fiber. The laser component is used for emitting mixed light including red laser light, green laser light, blue laser light and yellow laser light, output intensity of the laser light can be adjusted, and accordingly the color of illuminating light can be adjusted; the coupling mirror is located on a light path of the mixed light and is used for refracting and collecting the mixed light; and one end of the single-core light-guide fiber is located at a focus of the coupling mirror while the other end of the single-core light-guide fiber is used for being connected with an endoscope or an inner mirror. The illuminating light source device not only has the illuminating intensity identical to that of a xenon lamp or a halogen lamp, but also can be prevented from generating high heat due to the fact that the light is mixed with infrared rays or ultraviolet rays. In addition, the mixed illuminating light is transmitted to the endoscope or the inner mirror via the single-core light-guide fiber, and furthermore, the single-core light-guide fiber is small in volume and convenient in use, and is soft.

Provided is a quantum dot LED with a dual photonic crystal structure, successively comprising a substrate 101, a hole injection layer 102, a reflection type photonic crystal 103 (i.e., a first photonic crystal) arranged on the hole injection layer 102, a hole transmission layer 104, a quantum dot active region 105, a deficit type photonic crystal 106 (i.e., a second photonic crystal) arranged on an electronic transmission layer 107, the electronic transmission layer 107, and an electron injection layer 108 from bottom to top. The beneficial effects are that the quantum dot LED can substantially increase LED light extraction efficiency, and finally favor the increase of LED luminescence power and brightness.

The present invention is one kind of light emitting module with automatically regulated light emitting power and its power regulating method. The light emitting module includes one LED module and one power source controlling board connected electrically to the LED module. The power source controlling board has and one thermal sensing unit for measuring environment temperature and one power source adaptor unit to convert the first power source into the second power source based on the measured temperature value. The light emitting power is regulated automatically, that is, the light emitting power is lowered to lower the temperature in condition of higher environment temperature and raised to raise brightness in condition of lower environment temperature.

The application discloses a light emitting diode and a preparation method thereof. According to the light emitting diode, the last quantum barrier layer of a plurality of quantum well layers and an electron blocking layer in a conventional structure are replaced with a super lattice structure comprising a plurality of first-type super lattice layers and a plurality of second-type super lattice layers; the super lattice structure reduces polarization electric field intensity of the last quantum barrier layer, improves an electron hole wave function overlapping degree of the light emitting diodeand is beneficial to radiation composite light emitting of the light emitting diode; and the super lattice structure not only reduces the preparation difficulty of the light emitting diode, but alsoenables growth of the high-quality super lattice structure and second-type contact layer to be possible. In addition, existence of the super lattice structure also enables a electronic barrier heightof a conduction band of the integral second-type structural layer to be further increased, greatly reduces electron leakage, meanwhile, reduces a barrier height of a valence band hole, promotes transmission of the hole, greatly promotes internal quantum efficiency of multiple quantum well layers, reduces sudden reduction of efficiency, and greatly promotes integral light emitting power of the light emitting diode.

The invention discloses a near-infrared light-emitting diode. A top first type current expanding layer, a top first type limiting layer, a top active layer, a top second type limiting layer and a top second type current expanding layer are formed from bottom to top in sequence at the top of a GaAs or AlGaAs substrate, a first type tunnel junction, a second type tunnel junction, a bottom second type current expanding layer, a bottom second type limiting layer, a bottom active layer, a bottom first type limiting layer and a bottom first type current expanding layer are formed in sequence from bottom to top at the bottom of the substrate, the second type tunnel junction is of a multi-layer film epitaxy structure, a doping source of the second type tunnel junction is Mg, and the doping concentration is more than 2.0 * 1019. The light-emitting power of the near-infrared light-emitting diode is greatly improved, and the manufacturing technology of the near-infrared light-emitting diode is simple.

The invention discloses a diode and a display panel. The diode comprises a cathode, an anode and an electron transmission layer, wherein the cathode and the anode are arranged opposite to each other; the electron transmission layer is formed between the cathode and the anode; an alkali metal compound serving as an electron injection layer is doped in the electron transmission layer; and the alkali metal compound includes at least one of lithium metaborate, potassium silicate, lithium tetra(8-hydroxyquinolinato)boron and alkali metal acetate. According to the mode mentioned above, the manufacture technology and process of the diode can be effectively simplified, the process yield is improved, and the manufacture cost of the diode is increased.

This invention relates to a high power LED array module including a CB, multiple anodes and cathodes, multiple chips, a package material and multiple lenses, among which, the CB has many holes for putting the arrays, each hole has a cathode and an anode, the anodes in the holes are connected with each other and cathodes are connected with each other, each hole has at least a chip serial or parallel to the anode and the cathode in the hole, the package material fills the holes for fixing the chips and each hole has a lens focusing rays generated by the chips.

This invention relates to a single-chip integrated white light LED with type-P electrode and type-N electrode on the surface, a distributive Bragg reflector, a substrate, a buffer layer, a first cladding, a first active region, a first upper cladding, a photon crystal layer, a second lower cladding, a second active region, a second upper cladding, a P type cladding and a P type ohm contact layer are set upwards from the bottom in it, in which, a first optical feedback cavity is composed of the distributive Bragg reflector and the top surface of the single-chip integrated white light LED, a second cavity is composed of the photon crystal layer and the top surface of the single-chip integrated white LED, lights emitted by the two active regions are compensated mutually, so it can emit white light directly not needing light conversion of fluorescent powder.

Disclosed is an integration method for increasing luminous power of an LED. The method comprises successively growing a buffer layer film system, an n-type film system, a multi-quantum well system and a p-type film system from the bottom to the top on a substrate in an epitaxial mode to form a conventional LED epitaxial structure, and continuing growing an additional n-type film system, an additional multi-quantum well system and an additional p-type film system on the LED epitaxial structure in an epitaxial mode to form a semiconductor amplifier. Provided by the invention is also a multi-section LED structure additionally arranged in a conventional LED chip structure along an epitaxial growth direction. The advantages are as follows: a structure provided with light amplification gains is added in the growth direction of a conventional LED chip structure so that the light extraction efficiency is substantially increased, at the same time, the luminescence area of a chip is not enlarged, and the device actual production power of a single wafer is effectively improved; and the multi-section LED structure is additionally arranged in the conventional LED chip structure along an epitaxial growth direction so that an LED chip has the effect of multi-stage series connection, the luminous power is substantially improved, large-power light output is realized, and the chip cost is lowered at the same time.

The present invention provides a board having frames, the board comprising a substrate and a plurality of frames located on one side of the substrate. The frames are formed by a lithography process. The thickness of the frames is in the range of 75 &mgr; m to 500 &mgr; m, and the width of the frames is the range of 50 &mgr; m to 500 &mgr; m. The present invention further provides a method of manufacturing the board and applications for the board. A highly integrated design for light-emitting elements can be easily achieved by the present invention, thereby providing a higher luminous power. In addition, the present invention provides a simpler manufacturing method which can reduce manufacturing cost and increase competitiveness in industry. Furthermore, the present invention is applicable to light-emitting elements with a film having uniform thickness and thinning design, and enables flexible illumination assembly to be easily achieved.

The invention discloses a manufacture method of an HV LED (high voltage light emitting diode) of a stereoscopic light emitting structure. The HV LED manufactured through the manufacture method is composed of at least two layers of sublevel LEDs which are bonded in staggered mode, wherein the number of the sublevel LEDs on one layer is n+1, the layer with the n+1 sublevel LEDs is used as a bottom layer, all the sublevel LEDs on the bottom layer are located on one plane, the number of the sublevel LEDs on the other layer is n, the layer with the n sublevel LEDs is used as a top layer, all the sublevel LEDs on the top layer are located on the other plane, each two adjacent sublevel LEDs respectively located on the bottom layer and the top layer are arranged on the two different planes, all the sublevel LEDs are provided with independent light emitting structures, and all the sublevel LEDs are connected in series. According to the manufacture method of the HV LED of the stereoscopic light emitting structure, all the sublevel LEDs are connected in series, the stereoscopic light emitting structure composed of the at least two layers is formed, light emitting efficiency per unit area is obviously increased, the area of a high voltage chip module having the same voltage as an existing high voltage chip module is nearly reduced to one half of the area of the existing high voltage chip module, and packaging cost of the high voltage chip module is effectively reduced.

The invention provides a light emitting diode lamp 3-dimentional phase transition heat dissipation method and device. The 3-dimentional phase transition heat dissipation method is characterized in that hollow fin structures and a phase transition heat transfer technique are coupled, and heat matching between a high-power electronic device heat power and natural air convection heat transfer power through 3-dimentional heat transfer of a phase transition working medium in a vacuum cavity. A condenser formed by a plurality of hollow fin structures is a special part of the method. The 3-dimentional phase transition heat dissipation device includes an evaporator, the condenser, a liquid storage groove and a phase transition working medium, the structure of the 3-dimentional phase transition heat dissipation device can be flexible designed according to an application environment, and the 3-dimentional phase transition heat dissipation device has wide applicability. The 3-dimentional phase transition heat dissipation device is large in heat dissipation power, has no power consumption, is light in weight, is simple in manufacturing technique, is low in cost, and can solve the heat management problem of light emitting diode lamp fundamentally.

The invention provides a light emitting unit, a light emitting device and a distance measuring device. The light emitting unit comprises a light emitting assembly, a reflecting mirror, and polarizingbeam splitters. The light emitting assembly consists of a first light emitting terminal for emitting first polarized light and a second light emitting terminal for emitting second polarized light, wherein the two light emitting terminals have the optical axes arranged in parallel; and the first polarized light and the second polarized light have the parallel emitting directions and vibration directions perpendicular to each other. The reflecting mirror is arranged at the propagation path of the first polarized light and is aligned with the first light emitting terminal. The polarizing beam splitters are arranged at the propagation paths of the first polarized light and the second polarized light and are opposite to the second light emitting terminal. The first polarized light and the second polarized light enter the polarizing beam splitters at brewster angles; and the second polarized light reflected by the polarizing beam splitters is combined with the first polarized light completely transmitted through thepolarizing beam splitter to form one beam of integrated light. Therefore, the light emitting power of the light source of the light emitting device can be improved; and thus the detection distance of the distance measuring device is increased.

The invention discloses a power increasing method of an infrared LED chip made of gallium aluminum arsenic materials. The method comprises the steps of: coating the infrared LED chip with photoresistand baking the infrared LED chip; carrying out photoetching processing on the P surface of the infrared LED chip to generate a light guide hole in the P surface, and then carrying out baking processing; soaking the infrared LED chip into a first mixed solution formed by mixing phosphoric acid and hydrogen peroxide for etching treatment; soaking the etched infrared LED chip into a second mixed solution formed by mixing nitric acid, glacial acetic acid and water for roughening treatment; and carrying out photoresist removing treatment and cleaning treatment on the infrared LED chip after roughening treatment. The light guide hole is formed in the P surface through photoetching treatment, so that the light-emitting area is increased, and the light-emitting power is improved; the open light guide hole can be formed through etching treatment, so that most of light rays cannot be reflected or absorbed, and the luminous power is improved; in addition, the light-emitting area can be increasedand the light-emitting power can be improved by roughening the surfaces of the P surface, the N surface and the side surface and roughening the light guide hole.

The invention provides a manufacturing method for a GaN-based LED (Light Emitting Diode) chip for increasing extraction efficiency and relates to the technical field of LED chip production. The manufacturing method is characterized in that the film thickness is d=(m+1) lambda / 4n and a multi-cycle ITO (Indium Tin Oxide) film is prepared when the ITO is taken as a GaN-based LED antireflection film, wherein the diameters of multi-cycle ITO mesh patterns are respectively 50-500nm and a distance between the adjacent multi-cycle ITO mesh patterns is 50-500nm. According to the manufacturing method provided by the invention, the lateral light emitting area is further increased, the escaping path of the light is increased and the extraction efficiency of the light is further increased.

The invention discloses a GaAs-based multi-junction red laser and a preparation method thereof, the GaAs-based multi-junction red laser comprises a GaAs substrate, a GaAs low-temperature buffer layer,a first laser section, a GaInP corrosion barrier layer and a first GaAs cap layer are sequentially grown on the GaAs substrate from bottom to top, and a plurality of light-emitting layers are grown on the first laser section and the GaInP corrosion barrier layer; each light-emitting layer comprises a plurality of tunnel junctions and a second laser section from bottom to top, the tunnel junctionclosest to the first laser section grows on the first laser section, and the second laser section grows on the tunnel junction; according to the invention, through the design of the tunnel junction, the growth of a multi-section laser material is realized, higher output power is obtained under lower current, and the luminous power of the laser is improved; meanwhile, due to the fact that the interface broadband between the AlInP upper limiting layer and the second GaAs cap layer is discontinuous, the (AlxGa1x)yIn1yP lattice transition layer is introduced in the technical scheme, the voltage isreduced, the reliability of the device is improved, the service life of the device is prolonged, and high practicability is achieved.

Provided are a luminous source device and a fetal blood oxygen light signal acquisition device which are used for an abdominal external noninvasive fetal blood oxygen saturation degree detecting device. The luminous source device comprises a luminous source, wherein the luminous source comprises multiple first luminous units and multiple second luminous units, the multiple first luminous units canemit red light or infrared light of first wavelength, the multiple second luminous units can emit red light or infrared light of second wavelength, the first wavelength is different from the second wavelength, the first luminous units and the second luminous units are identical in number, the multiple first luminous units and the multiple second luminous units are arranged to form a line-row luminous source matrix, and large-range multiple ways are achieved to increase the luminous power of the luminous source, so that received light signals relevant to the fetal blood oxygen saturation degree are greatly intensified compared with an original device, but the light power received per unit area of abdominal skin of a pregnant woman is very small or is not improved. The fetal blood oxygen light signal acquisition device is provided with the luminous source device.

The invention discloses a field-induced electron beam pumping ultraviolet light source. The field emission electron source comprises a first electrode, a second electrode, an n-type GaN semiconductorlayer, a field-induced emission cathode array and a first power supply. An epitaxial layer of the field emission electron source sequentially comprises a second AlN buffer layer and an n-type GaN semiconductor layer from the sapphire substrate to the outside. The first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, and a gap is formed between the first electrode and the second electrode, and the first electrode and the second electrode are not in direct contact. The field-induced emission cathode array is arranged in the gap, and thefield emission cathode array is in contact with the n-type GaN semiconductor layer. The field-induced emission cathode is a field-induced emission cathode with an ultraviolet photosensitive characteristic. The first electrode and the second electrode are respectively connected to a positive electrode and a negative electrode of the first power supply. According to the invention, the luminous powerof the field-induced electron beam pumping ultraviolet light source is improved.

The invention relates to a UV LED chip of a P-type GaN layer and a preparation method thereof. The UV LED chip comprises a substrate, an AlN buffer layer, an undoped AlGaN buffer layer, an n-type AlGaN layer, a quantum well layer, an electron barrier layer, a p-type GaN layer, a transparent conductive film layer and a passivation layer, which are arranged in order from bottom to top. A p-type ohmic electrode is arranged on the transparent conductive film layer. An N-type ohmic electrode is arranged on the n-type AlGaN layer. A regular structure body or an irregular structure body is etched onthe p-type GaN layer. Ultraviolet light absorption of the p-type GaN layer is reduced. Ohmic contact between the p-type GaN layer and the transparent conductive film layer is preserved. The external quantum efficiency and the light-emitting power of a UV-LED are improved.

The invention relates to the technical field of illumination parts, and discloses an LD laser light source module. The LD laser light source module includes an LD light source, a reflection componentand a powder piece which are successively arranged in the light radiating the direction of the LD light source; and lights radiated by the LD light source are blue rays, the powder piece and the LD light source are arranged in a parallel mode, the powder piece is coated with yellow phosphor powders which are combined with the blue rays to be white lights, the reflection component is used for reflecting the lights radiated by the LD light source to the powder piece, and then the lights are reflected off through the powder piece. Compared with the prior arts, the LD laser light source module hasthe beneficial effects that the luminous power is high, the brightness is high, the definition is high, the luminous distance is long, and the size is small.

Disclosed is an underwater low-power focusing and high-power flash switch control LED lamplight control apparatus. The apparatus is provided with a circular annular LED lamp holder; multiple LED lampbeads capable of displaying two different colors and with different luminance are arranged at intervals in the circumferential direction of the annular surface on the front side of the LED lamp holder; a battery cabin and a main controller connected to one side of the battery cabin are arranged on the upper part of the LED lamp holder; the main controller comprises a main control circuit and an optical signal conversion circuit connected therewith; the optical signal conversion circuit is provided with a photosensitive sensor PT; and the photosensitive sensor PT is connected with an optical fiber line led from the outer side of the main controller. By adoption of the apparatus, low-power weak light can assist focusing, and camera shooting light can be provided by high-power strong light; and in addition, the apparatus is low in average working power, long in endurance, good in heat dissipation effect and low in cost.

The invention belongs to the technical field of a semiconductor and discloses a nano-column ultraviolet LED and a preparation method and application thereof. The preparation method is characterized byarranging a layer of nano-silicon dioxide particles on the surface of an ultraviolet LED epitaxial wafer; and then, with the nano-silicon dioxide particles being a mask, carrying out etching on the ultraviolet LED epitaxial wafer to form a nano-column structure, and obtaining a nano-column ultraviolet LED. The nano-column ultraviolet LED comprises a substrate, a pre-paved Al layer, a AlN layer, aAlGaN layer, a u-GaN layer, an n-GaN layer, quantum well nano-columns and p-GaN nano-columns from the bottom up in sequence. The nano-column ultraviolet LED helps to release the stress of an LED quantum well, reduces the quantum-confined stark effect and enhances LED device performance; and besides, the preparation method is simple and feasible, omitting complex steps and cost in preparing the mask, and can adjust the size of the nano-columns through SiO2 in different particle sizes.

The present invention uses the light-emitting diode (LED) with 630 nm wavelength as therapeutic light source, and utilizes an array combination method to make several light-emitting diodes be formed into a luminous body, its luminous total power is greater than 3W, so that the photon therapeutic effect can be raised. Said therapeutic method can be used for curing several diseases of burn, scald, herpes zoster, intraperitoneal diseases, pelvic inflammation and carcinoma etc.

The invention belongs to the technical field of endoscopes, and discloses a dual-band optical molecular imaging light source apparatus based on efficient Light Emitting Diode (LED) refrigeration. Thedual-band optical molecular imaging light source apparatus based on the efficient LED refrigeration comprises an optical bottom plate; a cooling fin and a light beam exporting device are arranged on the optical bottom plate; two semiconductor coolers are vertically arranged on an inner side wall of the cooling fin; one LED copper substrate is provided on a surface of each of the semiconductor coolers; single LED light-emitting chips are arranged at centers of the LED copper substrates; one collimating device is respectively arranged on the surface of each of the two LED copper substrates; a high-reflectivity mirror and a dichroic mirror are fixedly arranged on the optical bottom plate; the high-reflectivity mirror and the dichroic mirror are respectively arranged, with an angle of 45 degrees, at light outlets of the two collimating devices; the high-reflectivity mirror reflects light from the first light-emitting chip to the dichroic mirror; and the dichroic mirror is used for superposing the light from the high-reflectivity mirror on light from the second light-emitting chip, and transmitting the superposed lights to the light beam exporting device. The dual-band optical molecularimaging light source apparatus based on the efficient LED refrigeration is capable of realizing dual-band light source output with high power output and highly efficient refrigeration; and thus, thedual-band optical molecular imaging light source apparatus can be widely applied in the field of optical molecular imaging.

The invention discloses a power saving method of a light emitting keyboard. According to the power saving method of the light emitting keyboard, whether a user operates the light emitting keyboard with a single hand or with double hands can be recognized so that the light emitting power of a light emitting element can be automatically adjusted. When the user operates the light emitting keyboard with a single hand, the light emitting element is controlled to keep high light emitting power so that the user can see words or patterns on keys conveniently. When the user operates the light emitting keyboard with double hands, the light emitting power of the light emitting element can be controlled according to the typing speed of the user, the faster the user types, the lower the light emitting power of the light emitting element is, and thus electric power can be saved.