Field-induced electron beam pumping ultraviolet light source

Abstract

The invention discloses a field-induced electron beam pumping ultraviolet light source. The field emission electron source comprises a first electrode, a second electrode, an n-type GaN semiconductorlayer, a field-induced emission cathode array and a first power supply. An epitaxial layer of the field emission electron source sequentially comprises a second AlN buffer layer and an n-type GaN semiconductor layer from the sapphire substrate to the outside. The first electrode and the second electrode are arranged on the same surface of the n-type GaN semiconductor layer, and a gap is formed between the first electrode and the second electrode, and the first electrode and the second electrode are not in direct contact. The field-induced emission cathode array is arranged in the gap, and thefield emission cathode array is in contact with the n-type GaN semiconductor layer. The field-induced emission cathode is a field-induced emission cathode with an ultraviolet photosensitive characteristic. The first electrode and the second electrode are respectively connected to a positive electrode and a negative electrode of the first power supply. According to the invention, the luminous powerof the field-induced electron beam pumping ultraviolet light source is improved.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting devices, in particular to a field electron beam pumped ultraviolet light source. Background technique [0002] With the development of science and technology, ultraviolet light sources have been widely used in national economy and national defense construction fields such as sterilization and disinfection, water purification, microelectronic lithography and surface modification, biotechnology and biochemical medicine, non-line-of-sight confidential optical communication, etc. [0003] Most of the existing ultraviolet light sources are mercury lamps or electric injection type ultraviolet light-emitting diodes developed based on AlGaN materials, but they have their own problems. In order to overcome the above problems, people have proposed electron beam pumped ultraviolet light sources based on AlGaN materials, electron beam The pumping method to achieve ultraviolet luminescence of AlGaN ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a field-induced electron beam pumped ultraviolet light source to solve the problem of low current density of the field emission electron source in the prior art, resulting in low luminous power

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