5 results about "Field electron emission" patented technology

The present application relates to a kind of elliptical chamfer variable-diameter cathode lead structure inhibiting backflow diode and inhibiting diode backflow method, belong to vacuum electron technology field, can effectively reduce the surface field intensity of cathode lead, inhibit field electron emission and delay the ion movement of zero field region to cathode lead.It includes cathode, cathode lead, anode in inhibiting backflow diode.The cathode lead is variable-diameter structure, non-variable-diameter part D is located at both ends, variable-diameter part E is located in the middle, variable-diameter part E is the same throughout radius, chamfer part F adopts elliptical chamfer structure.Non-variable-diameter part D radius is the same with cathode radius, and variable-diameter part E radius is less than cathode radius.The inhibiting diode backflow method includes: reducing the position radius of cathode lead, realizes the optimal cathode lead surface electric field;Both sides of the position radius reduction are smoothly transitioned back to original size, so that the surface electrostatic field of cathode lead position possibly bombarded by anode ion is further reduced.

The application belongs to the technical field of nano-plasmonic switch, and relates to a nano-plasmonic switch with a vertical electrode structure, which comprises, from bottom to top, a substrate layer, a first conductive layer, a dielectric layer and a second conductive layer; the dielectric layer is provided with a cavity vertically penetrating the dielectric layer along the stacking direction, the second conductive layer covers one end of the cavity away from the first conductive layer and is arranged in a spaced mode with the first conductive layer; an excitation voltage is applied to the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, and the cavity is used as an electrode gap to form the nano-plasmonic switch with the vertical electrode structure. The application can increase the effective field electron emission area, reduce the difficulty of switch conduction, and shorten the time required for the switch to change from the cutoff state to the fully on state, and the response speed is fast.

The invention belongs to the technical field of nano plasma switches, and relates to a nano plasma switch with a vertical electrode structure, which comprises a substrate layer, a first conductive layer, a dielectric layer and a second conductive layer which are sequentially stacked from bottom to top, the dielectric layer is provided with a cavity vertically penetrating through the dielectric layer along the overlapping direction, the second conductive layer covers one end, far away from the first conductive layer, of the cavity, and the second conductive layer and the first conductive layer are arranged at an interval; and applying excitation voltage on the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, thereby forming the nano plasma switch with a vertical electrode structure by taking the first conductive layer and the second conductive layer as electrodes and the cavity as an electrode gap. According to the invention, the field electron emission area can be effectively increased, the switch conduction difficulty is reduced, the time required for switching the switch from a cut-off state to a complete conduction state is short, and the response speed is high.

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, one side of a first main surface of the first substrate 1 is provided with a cold field electron emission unit, the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7 and a low-potential electrode 12, and one side of the first main surface is also provided with a grid electrode 10, at least part of the back electrode metal thin film 11 is arranged in the through hole of the first substrate and is exposed from the second main surface, the electron acceleration layer 4 is arranged between the high-potential emitter 7 and the low-potential electrode 12 in the longitudinal direction perpendicular to the first main surface of the first substrate, and the high-potential emitter 7 is arranged between the gate 10 and the electron acceleration layer 4; and a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.

The invention provides a transistor device and a manufacturing method thereof, and an integrated circuit, and the transistor device comprises a first substrate 1, a cold field electron emission unit is disposed on one side of a first main surface of the first substrate, and the cold field electron emission unit comprises an electron acceleration layer 4, a high-potential emitter 7, and a low-potential electrode 12. A grid electrode 10 is further arranged on one side of the first main face of the first substrate, a back electrode metal film 11 is arranged on one side of the second main face of the first substrate, in the longitudinal direction perpendicular to the first main face of the first substrate, an electron accelerating layer 4 is located between a high-potential emitting electrode 7 and a low-potential electrode 12, and the high-potential emitting electrode 7 is located between the grid electrode 10 and the electron accelerating layer 4. And a second substrate (20) having an electron collector (26) provided on the first main surface side thereof, the electron collector (26) being electrically connected to a wiring (23) provided on the second main surface side thereof through a via electrode in the second substrate, and the first main surface of the first substrate (1) and the first main surface of the second substrate (20) being hermetically bonded to each other.