29results about "Cold cathode manufacture" patented technology

An electrical device can include a body having a shape and including one or more components, and first and second electrodes implemented at respective locations of the body and configured to provide first and second engagements with a mounting surface and to allow a settling motion when the electrical device is positioned on the mounting surface. The electrical device can further include a third electrode implemented at a respective location of the body and configured to allow a limited range of the settling motion such that at an end of the limited range of the settling motion, the third electrode provides a third engagement with the mounting surface.

Disclosed are a substrate support unit and a substrate processing apparatus including the same, in which a heat generation issue of a bias electrode is improved. The substrate support unit is disposed inside a chamber body for processing of a substrate using plasma to hold the substrate, and includes a dielectric plate including a chucking electrode for adsorption of the substrate, a bias electrode provided inside the dielectric plate at a position below the chucking electrode to control plasma treatment process characteristics, and a bias power line configured to supply power to the bias electrode. The bias power line branches into a plurality of lines, and the plurality of lines forms junction portions together with the bias electrode in a region outside the substrate.

The present application relates to a cathode and a manufacturing method thereof. The method includes: mixing and reacting cations containing a cathode element with a precipitant in a solution to obtain a gelatinous precipitate; and coating the gelatinous precipitate on a surface of a cathode substrate, which is configured for forming the cathode.

This utility model discloses an eccentric adjustment device for the cathode end cap and anode cylinder of a magnetron, including an indexing turntable assembly and a carrier cylinder. The indexing turntable assembly has a turntable, and the carrier cylinder is rotatably mounted on the turntable. It also includes a vision system, comprising a camera for upward imaging of the output end cap and the connecting ring; a carrier cylinder rotation drive mechanism for driving the magnetron assembly to rotate, including a carrier cylinder servo motor that drives the carrier cylinder to rotate; a pressing assembly, including a pressing block servo motor and a pressing block for pressing down the top outer periphery of the ceramic shaft, the pressing block servo motor driving the pressing block to move up and down; and a control system, which is signal-connected to the vision system and controls the indexing turntable assembly, the carrier cylinder rotation drive mechanism, and the pressing assembly. This eccentric adjustment device for the magnetron cathode end cap and anode cylinder improves the effectiveness of eccentric adjustment and increases work efficiency.

An electrostatic chuck system for use in a plasma processing chamber is provided. A conductive base plate is provided. A bond of a bonding material is bonded to a surface of the base plate on a first side of the bond. A ceramic plate is bonded to a second side of the bond. A protective strip surrounds the bond and extends between the conductive base plate and the ceramic plate, wherein the protective strip comprises at least one of an anodized strip, a ceramic tape strip, and a coated aluminum strip.

This application discloses an EBAPS device based on an axially asymmetric dual-segment amorphous silicon microchannel plate, comprising: an AVG, a photocathode, an EBCMOS pixel array, an axially asymmetric dual-segment amorphous silicon microchannel plate, and an EBCMOS sensor; the axially asymmetric dual-segment amorphous silicon microchannel plate is disposed between the photocathode and the EBCMOS pixel array; the axially asymmetric dual-segment amorphous silicon microchannel plate is bonded to the EBCMOS pixel array; and the axially asymmetric dual-segment amorphous silicon microchannel plate and the EBCMOS sensor are bonded together. This EBAPS device enables electrons to undergo electron multiplication in a directional manner before entering the silicon target, allowing the multiplied electrons to enter the EBCMOS sensor in a directional manner. Simultaneously, the number of multiplied electrons is greatly increased, and crosstalk between electrons and pixels is isolated, thus improving imaging quality.

The application provides a three-terminal electronic device without semiconductor channel, comprising: a gate control layer composed of a gate electrode and an insulating gate medium; a source electrode and a drain electrode, the source electrode and the drain electrode being nanometer-scale conductive material electrodes, a spacing distance between the source electrode and the drain electrode being in a range of atomic spacing to sub-10 nm, and a spacing space between the source electrode and the drain electrode being a channel region of the device; and a metal interconnection layer connected with the source electrode and the drain electrode. The three-terminal electronic device without semiconductor channel according to the application can realize an on-state current density of not less than 0.5 mA / μA and a sub-threshold swing of less than 60 mV / dec under a source-drain voltage of less than 0.3 V, solves the problems of low on-state current and slow switching speed of a traditional three-terminal electronic switch with vacuum / air channel medium, and exhibits the characteristics of high performance and low power consumption.

This invention discloses a plasmon-enhanced carbon nanotube field emission device, its fabrication method, and its applications. The device includes an insulating substrate, a concentric circular metal grating on the substrate, anode and cathode electrodes located in the central region of the grating, and carbon nanotubes bridging the electrodes and forming nanoscale gaps. By designing the grating period to match the incident laser wavelength, surface plasmons can be excited, generating a localized electric field enhancement at the center, thereby significantly reducing the electron tunneling barrier at the carbon nanotube tip and increasing the field emission current. This invention also provides a corresponding fabrication method, including the patterning of the grating and electrodes, the deposition and patterning of the carbon nanotube thin film, and the formation of the nanoscale gaps. This device has a simple structure, effectively avoids thermal damage caused by direct laser radiation, and has application potential in fields such as field emission enhancement, optical signal detection, and optoelectronic modulation.

Embodiments of the present disclosure provide a vacuum transistor, an array substrate and an electronic device, and relate to the technical field of vacuum electronics, and are used for improving the control of the gate on the vacuum tunneling current and improving the on-off ratio of the vacuum transistor. The vacuum transistor comprises a substrate, a first electrode, a gate, a second electrode and a via hole. The first electrode, the gate and the second electrode are sequentially stacked on the substrate along a first direction and a direction gradually away from the substrate, and the first direction is the thickness direction of the substrate. The first electrode and the gate, and the gate and the second electrode are both spaced apart along the first direction. The via hole penetrates the second electrode and the film layer between the second electrode and the first electrode along the first direction, and exposes the side surface of the first electrode away from the substrate. The orthogonal projection of the gate on the substrate and the orthogonal projection of the second electrode on the substrate overlap.

This invention discloses an assembly method and assembly fixing structure for an electron gun, belonging to the field of electron gun manufacturing. It includes a base, with a pedestal integrally formed at the center of the upper surface of the base. A turntable is rotatably connected to the outer surface of the pedestal. A slide is symmetrically fixed to the upper surface of the turntable. A cover plate is provided above the pedestal, and a sliding shaft is symmetrically fixed to the outer surface of the cover plate. A rotating sleeve is fitted around the sliding shaft. This invention drives the control grid to rotate 360 ​​degrees horizontally by rotating the turntable. Through gear meshing and threaded lifting, the lifting frame one slides to achieve left and right flipping of the control grid with the right-side rotating shaft as the fulcrum. An operating screw drives the lifting frame two and the movable rod to raise and lower, completing the forward and backward pitch of the control grid with the two sliding shafts as the fulcrums. These three adjustment dimensions are independent and can be linked, enabling precise alignment of the control grid and the shadow grid in all directions without blind spots, meeting the angle matching requirements of high-precision assembly.

The application discloses a method for impregnating emitting substances in a ring-shaped impregnated cathode, which comprises the following steps: wrapping a molybdenum sheet around the outer surface of a ring-shaped impregnated cathode base, and then tightening the molybdenum sheet by a plurality of molybdenum wires; placing the ring-shaped impregnated cathode base with the wrapped molybdenum sheet on a molybdenum boat, and placing a conical molybdenum block at the upper end of the ring-shaped impregnated cathode base; placing a required weight of emitting substances in a cylindrical space formed by the molybdenum sheet above the ring-shaped impregnated cathode base; placing the molybdenum boat together with the ring-shaped impregnated cathode base into a hydrogen furnace for heating and heat preservation until the emitting substances are melted and filled into the pores of the ring-shaped impregnated cathode base; taking out the ring-shaped cathode base, removing the molybdenum wires, the molybdenum sheet and the conical molybdenum block, and removing the floating salt on the surface of the ring-shaped cathode base, so that the ring-shaped impregnated cathode is prepared; and the method realizes the accurate control of the impregnation process of the ring-shaped impregnated cathode through the ingenious physical packaging, simplifies the process, avoids the waste of the emitting substances and guarantees the emitting performance.

The present application relates to anode target disc and its preparation method and application, wherein the anode target disc comprises a substrate and a track layer, the track layer is arranged on the surface of the substrate, a transition layer is arranged inside the substrate, the material of the transition layer is different from the material of the substrate; the thermal conductivity of the material of the transition layer at 25 DEG C is greater than the thermal conductivity of the material of the substrate at 25 DEG C, and / or the melting point temperature of the material of the transition layer is less than the highest working temperature of the substrate. The anode target disc has excellent thermal performance and mechanical performance, and the preparation method is simple and low in cost.

The application discloses a preparation method of a carbon nanotube / perovskite composite structure cold cathode. First, carbon nanotube slurry is prepared through an audio frequency resonance technology, then the dispersed slurry is transferred to a preprocessed conductive substrate through a patterning process to obtain a carbon nanotube array structure. Then, an inorganic cesium lead halide perovskite polycrystalline thin film is prepared on the carbon nanotube array structure by using a continuous vapor deposition method, so that a carbon nanotube / perovskite composite structure cold cathode emitter with a lower work function is obtained, and the field emission performance is greatly improved. The cold cathode slurry is prepared through the audio frequency resonance technology, and the carbon nanotube / perovskite composite structure cold cathode is prepared by combining the continuous vapor deposition technology, so that a low-cost, high-efficiency and high-performance cold cathode emitter preparation method is provided.

The application provides a carbon nanotube cold cathode, a preparation method thereof and an X-ray tube. The preparation method comprises the following steps: ball milling agglomerated carbon nanotubes to obtain carbon nanotube powder; mixing the carbon nanotube powder with a first solvent and an electrolyte solution, and then performing ultrasonic oscillation to obtain a suspension; placing a metal substrate in the suspension to perform electrophoretic deposition, thereby obtaining a carbon nanotube film cold cathode; coating a curing agent on the carbon nanotube film cold cathode to perform cross-linking and curing, thereby obtaining a cured carbon nanotube cold cathode; using a high-energy ion beam to form a tip of the carbon nanotube in the cured carbon nanotube cold cathode; and using a high-strength electric field to make the carbon nanotube stand upright, thereby obtaining an activated carbon nanotube cold cathode.

Disclosed in the embodiments of the present disclosure are a part for semiconductor processing equipment, and a manufacturing method therefor. The part comprises: a first silicon carbide layer and a second silicon carbide layer, wherein the second silicon carbide layer is arranged on one side of the first silicon carbide layer, and the number of crystal boundaries in the second silicon carbide layer is different from that of crystal boundaries in the first silicon carbide layer.

A chip mounted field emitter array method for their fabrication by applying sintering to bind a substrate die to other die layers. Metal powder is applied to the bonding surface of the die, covered with the chip carrier or chip and compressed between two heated plates. The bonding pads of the die may be conductively coupled to corresponding bonding pads of the other die layers.

This utility model discloses an X-ray collimation and automatic filter replacement device, characterized in that it includes a front collimation unit, a guide rail mounting plate, a lead screw motor, a filter mounting plate, and miniature guide rails; the front end of the front collimation unit is connected to the X-ray emission port of the X-ray source for collimating the input X-rays before outputting them; the rear end of the front collimation unit is connected to the front end of the guide rail mounting plate; the guide rail mounting plate has a strip-shaped slit for outputting the X-rays collimated by the front collimation unit; miniature guide rails are respectively provided on both sides of the rear end of the guide rail mounting plate; the filter mounting plate is mounted on the miniature guide rails for providing linear guidance for the movement of the filter mounting plate; the filter mounting plate has multiple side-by-side filter plates for filtering the X-rays output through the strip-shaped slits; a lead screw motor is mounted on one side of the guide rail mounting plate, and the lead screw motor is connected to the filter mounting plate for driving the filter mounting plate to move linearly along the miniature guide rails to achieve switching between different filter plates.

Disclosed herein is a substrate stack comprising a plurality of substrates, wherein: each substrate in the substrate stack comprises at least one set of alignment openings; the at least one set of alignment openings in each substrate is aligned for passing a light beam through corresponding alignment openings in each substrate; and each substrate comprises at least one alignment opening having a smaller diameter than corresponding alignment openings in other substrates.

The application belongs to the technical field of X-ray generating device, and relates to a cold cathode X-ray tube and a preparation method thereof. The cold cathode X-ray tube comprises a shell and a cathode assembly, a grid assembly, a beam current ring and an anode assembly arranged in sequence. The cathode assembly has a cathode cover covering a carbon nanotube emission layer, and a low work function material is deposited on the surface of the emission layer; the grid assembly adopts a photoetching metal mesh as a grid layer and is isolated from the cathode through an insulating layer; the beam current ring is used as a ring electrode for actively regulating the shape and landing point of the electron beam; and the anode assembly comprises a tungsten target with a specific inclination angle. The components are connected and fixed through vacuum brazing, and a fixing groove supports 360-degree adjustable installation. The preparation method comprises the steps of cathode emission layer processing, grid cutting and assembly, anode brazing, shell welding and general assembly. Through optimization of the cathode emission performance, the grid control precision and the active focusing of the beam current, the application realizes efficient regulation and control of the electron beam and stability and adjustability of the X-ray output.

A manufacturing method of an electrode plate (11) for a plasma processing apparatus, in which a plurality of gas holes (21) having a straight portion (22) of a length of at least 12 mm are formed in a thickness direction of an electrode plate body (12) in a manner of being parallel to each other and in a through state, the manufacturing method has: a pre-hole forming step of forming a pre-hole (23) from one face of the electrode plate body (12) using a first drill bit (31), the pre-hole (23) having a diameter of 50% or more and 80% or less of a diameter of a hole in which the straight portion (22) is formed; and a straight portion forming step of forming the straight portion (22) in a manner of overlapping the pre-hole (23) using a second drill bit (32).

This invention discloses a low-temperature preparation technology for plasma-assisted hydrothermal synthesis of carbon nanotubes and its application in the field of cold cathode technology. It relates to the fields of carbon nanotube preparation and cold cathode technology, including the construction of a reaction system containing a catalyst precursor and a carbon source, and a hydrothermal reaction: the catalyst precursor is a phosphorus-free core-shell Ni-Mo-ammonium citrate complex, formed by nickel nitrate, sodium molybdate, and ammonium citrate in the order Ni... 2+ :MoO4 2‑ The reaction is carried out with a citrate molar ratio of 3:1:1.2. In this invention, phosphorus residue and catalyst agglomeration are eliminated by using a phosphorus-free core-shell catalyst, combined with a composite heteroatom source and ultrasonic-stirring dispersion process, and a three-stage pulsed plasma reaction at ≤190℃. This optimizes the quality of carbon nanotubes, eliminates the need for acid washing / annealing, and is compatible with flexible substrates. The cold cathode is fixed by a modified PET substrate and a metal-free transition layer, ultimately achieving a 1×10⁻⁶ reaction. ‑4 Achieving an on-state electric field ≤1.8V / μm, a threshold electric field ≤4.2V / μm, and a current density stability ≥90% under Pa conditions, this technology solves the problems of carbon nanotube quality, cost, substrate compatibility, and cold cathode performance in traditional technologies.

The application relates to the technical field of X-ray regulation, in particular to a focusing electrode assembly of an adjustable micro-focus X-ray source, which comprises a bearing frame, and a shielding cover and a grounding system are arranged on the upper surface of the bearing frame. The focusing electrode assembly of the adjustable micro-focus X-ray source has high focusing precision and stable and reliable operation, adopts a multi-stage focusing structure composed of main focusing, auxiliary focusing and a ring-shaped shaping electrode, and can gradually converge and correct the electron beam, and the pre-adjustment and micron-level precise adjustment of an adjustable cathode mounting seat and the accurate positioning of a cathode-anode alignment reference block are combined, so that the electron beam is stably converged into a micro-focus, the X-ray quality and imaging resolution are optimized, meanwhile, the electrode insulation support column guarantees the insulation distance, the heat shielding cover and the cooling interface efficiently control the temperature, the shielding grounding system eliminates electromagnetic interference, the X-ray window alignment collimation sleeve guarantees the accurate output direction, and the overall structure meets multiple requirements.

The disclosed electron source includes: (A) a graphene layer superficially having an electron-emitting area; and (B) a p-type semiconductor layer that is in direct contact with the graphene layer and that forms a Schottky junction with the graphene layer. In the thus-configured electron source, electrons are accelerated in the depletion layer in the p-type semiconductor layer. Furthermore, unlike with an MIS-type electron source, electrons are not accelerated in the insulating layer; therefore, dielectric breakdown due to a large number of electrons travelling through the valence bands of an insulation object does not occur, allowing a long-life electron source to be realized. It is preferable that the above-described p-type semiconductor layer have a depletion layer having a width of 2.91-30 nm.

This technology contributes to making it easier to obtain desired handling characteristics in electron sources and to making it easier to control the focusing of electron beams as desired. [Solution] The electron source E1 includes a columnar electrode base S1 positioned such that one end in the axial direction faces the anode T. The electrode base S1 has an annular notched recess 11 extending circumferentially along the peripheral edge of the end of the electrode base S1 on one side in the axial direction, a small-diameter portion 21 that protrudes to the one side in the axial direction on the inner circumference side of the notched recess 11 of the electrode base S1, and a large-diameter portion 12 at the other end of the electrode base S1 on the axial direction, which is larger in diameter than the small-diameter portion 21. An electron emission portion 3a is provided on the anode-facing surface 2a of the small-diameter portion 21.

The application discloses a kind of high-power X-ray light source device and high-power X-ray generation method, it is related to X-ray light source technical field.The device includes: electron generation component, initial electron beam is generated based on field emission principle, and initial electron beam is amplified by avalanche multiplication;Electron acceleration component, the initial electron beam after amplification is gradient acceleration and radial constraint, and forms focused electron beam;X-ray occurs component, including rotating anode target disc, cooling circulation base, drive motor, the flow passage in cooling circulation base is communicated to external cooling device, drive motor is used to drive rotating anode target disc rotation, rotating anode target disc is installed on cooling circulation base, and X-ray photon is generated when receiving the bombardment of focused electron beam;Rotating anode target disc inside is equipped with the microchannel array layer that is communicated with the flow passage in cooling circulation base, for removing associated heat generated by bombardment.