522results about "Cold cathode manufacture" patented technology

The invention relates to a gradient diameter microchannel plate and a preparation method and application thereof. The preparation method comprises the following steps: preparing a transparent material into a sheet-shaped substrate; the method comprises the following steps: processing conical array micropores in a substrate by using femtosecond laser to obtain a gradient-diameter substrate; when the conical array micropores are processed, the inlet end is firstly etched to form an opening, then the diameter is gradually and uniformly reduced to the outlet end, and the diameter of the inlet end is greater than that of the outlet end; the ratio of the hole depth of the conical array micropores to the diameter of the outlet end is 30-200, and the taper angle is 1-5 degrees; preparing AlO-SiO-BOsol containing Cs, uniformly coating the AlO-SiO-BOsol on the inner walls of the conical array micropores, and then carrying out hydrogen reduction to obtain a microchannel blank plate; and plating electrodes at the two ends of the micro-channel blank plate to obtain the gradient-diameter micro-channel plate. The gradient diameter microchannel plate provided by the invention has the advantages of high gain and low noise, and is more practical.

The invention discloses a micro-channel plate manufacturing method, which comprises the following steps of: bombarding a processing sample through heavy ions to form a plurality of micro-channels on the processing sample; cleaning the path of the micro-channel, and expanding the aperture of the micro-channel; performing high-impedance treatment on the inner wall of the micro-channel to form a high-impedance inner wall; on the basis of the steps, the high-energy heavy ions generated by the high-energy accelerator are used for bombarding the glass sample with set parameters to manufacture the micro-channel plate, so that the tedious manufacturing processes of manufacturing a capillary glass tube and machining and shaping are omitted; the production efficiency is improved, the manufacturing time is shortened, and the production cost is reduced. The technical problem that much inconvenience is brought to production, processing and use due to the fact that micro-channel plates in the market are prone to deformation and even damage in the production process is solved.

The present invention discloses a cathode assembly carbonization furnace, comprising a lower furnace body, an upper cover body, a carbonization gas source, a carbonization power source, a cathode assembly conveying line and a loading and unloading robot; the upper cover body is slidably arranged on the lower furnace body, and is provided with a plurality of spray branches therein, and the spray branches are connected to the carbonization gas source through an outer air pipe; a plurality of groups of carbonization tanks are arranged in the lower furnace body corresponding to the spray branches, and the carbonization tanks are provided with electrode clips, and the electrode clips are connected to the carbonization power source; the loading and unloading robot comprises a mechanical gripper for clamping and transporting cathode assemblies, which is used to assemble the cathode assemblies from the cathode assembly conveying line into the carbonization tanks or to unload the cathode assemblies from the carbonization tanks onto the cathode assembly conveying line. The present invention adopts a new structural design, is applicable to the requirements of assembly line operation, has a high level of automation, effectively improves the carbonization processing efficiency and quality of magnetron cathode assemblies, reduces labor input, and reduces the production cost of enterprises.

This plasma processing device is provided with an electrode plate that is disposed so as to face a substrate mounting table across a processing space. The electrode plate is provided with a first plate that comprises silicon and has a refrigerant flow path formed therein, and a second plate that comprises silicon and is provided with a buffer chamber for supplying a processing gas to the processing space. The electrode plate is integrally formed by joining the first plate and the second plate.

A field emission assembly and an electromagnetic wave generator are provided, the field emission assembly includes a linear emitter which includes carbon nanotube (CNT) fibers and emits electrons and a holder configured to fix the emitter, both ends of the emitter are fixed to the holder, and the emitter includes at least one of a curved portion so as to form a peak in an electron emission direction and a bent portion so as to form a peak in the electron emission direction.

The invention provides an ICP and CCP combined plasma etching device and method and a preparation method. The device comprises an upper electrode and a lower electrode which are oppositely arranged in a plasma vacuum reaction cavity; the upper electrode comprises a gas spraying area used for spraying gas downwards and an edge area surrounding the gas spraying area, a plurality of windows evenly distributed in the circumferential direction are formed in the edge area, and each window is sealed by an insulating part; wherein coils are arranged above the insulating parts in a one-to-one correspondence mode, or coils which extend in the circumferential direction of the edge area and pass through the upper portions of all the insulating parts are arranged above the edge area. The problems that an existing ICP etching device cannot bear a high-power bias electric field, and a CCP etching device is prone to causing relatively low plasma density at the edge of a substrate can be solved.

A seal for a vacuum chamber is formed from two outer insulation blocks (14), (16), an intermediate insulation block (34), (36), some interior insulation sheets (74), (76), (78) and some exterior insulation sheets (80), (82), (84). A first outer insulation block (14) seals between a first wall (2) of the vacuum chamber and a first power transmission plate (10). A second outer insulation block (16) seals between a second wall (4) of the vacuum chamber and a second power transmission plate (12). The intermediate insulation block seals between the first and second power transmission plates. The interior insulation sheets are arranged in slots (62), (64), (66) in a first side of the intermediate insulation block. The exterior insulation sheets are arranged in the slots (68), (70), (72) in a second side of the intermediate insulation block.

The present invention discloses a method for preparing an X-ray fluorescent screen and the X-ray fluorescent screen thereof. The preparation method comprises the following steps: S1, pretreatment: cleaning and drying a microchannel structure; the microchannel structure is provided with a plurality of through microchannels, and the microchannel structure is made of glass; S2, microchannel coating: coating the sidewalls of the microchannels with a reflective film; S3, preparing a suspension: mixing fluorescent material particles, a carrier solvent, and a surfactant, and dispersing them to prepare a suspension; S4, filling the microchannels; S5, repeating the filling; S6, post-treatment: cleaning the surface of the microchannel structure and encapsulating it; the X-ray fluorescent screen is prepared using the above preparation method; the X-ray fluorescent screen comprises a microchannel structure, the microchannel structure is provided with a plurality of through microchannels arranged in an array, and the microchannels are filled with fluorescent material particles. The present invention fills the glass microchannel structure with fluorescent material particles to improve the resolution and fluorescence transmission efficiency of the X-ray fluorescent screen.

A manufacturing method of a substrate processing apparatus includes: preparing a main body having a lower end disposed at a first level, having a step formed at a second level higher than the first level, and having an upper end disposed at a third level higher than the second level; forming, by a thermal spray (TSC) method, a first coating from the first level to a height of a fourth level higher than the third level so as to surround the body; forming a bonding unit from an upper surface of the main body to the fourth level; forming a second coating layer on the first coating layer, the second coating layer having a smaller thickness than the bonding unit and a greater hardness than the first coating layer; and arranging a disc on the upper surfaces of the joint unit and the second coating.

The present invention belongs to the field of vacuum electronics, and discloses a structure for improving the output power of a microwave energy transmission window and a composite thin film metallization method. The method is to coat a composite film of a certain thickness on the microwave energy transmission window in two steps by magnetron sputtering coating. First, a mask is used to cover the middle area of ​​the dielectric window, and the edge is coated with composite film layers of different thicknesses by magnetron sputtering or electron beam evaporation. The composite film layer can realize vacuum welding of the window; then a mask is used to cover the edge, and a certain thickness of titanium nitride or silver oxide is plated in the central area of ​​the dielectric window by magnetron sputtering or electron beam evaporation. The titanium nitride or silver oxide in the central area can significantly reduce the plasma breakdown caused by high microwave power. The present invention is applicable to the field of vacuum electronics technology, and the method can improve the pressure resistance of the energy transmission window and significantly improve the power capacity of the energy transmission window.

A method for fabricating an electron field emission cathode, the field emission cathode including a substrate having a field emission layer engaged therewith, where the field emission layer incorporates modified carbon nanotubes and a matrix material to improve field emission characteristics of the cathode and field emission cathode devices implementing such cathodes.

The present invention relates to the technical field of filament cathode materials, and in particular to a tungsten alloy wire, a preparation method and use thereof, and a tungsten carbide alloy filament. The tungsten alloy filament comprises the following components: the tungsten alloy comprises the following components: 0.0005-0.3wt% carbon element, 0.25-2.6wt% M element, 0.05-0.5wt% oxygen element, the remainder being tungsten element and inevitable impurities, and the components do not contain thorium element; the initial recrystallization temperature of the tungsten alloy wire is 48%Fc-56%Fc, and / or, the average size of its 80%Fc recrystallized grains is (1-15) μm. The tungsten alloy wire does not contain thorium element and does not have radioactive pollution problem. Its initial recrystallization temperature is between 48%Fc and 56%Fc. Its processing performance is greatly improved compared with thoriated tungsten material. Compared with thoriated tungsten wire, the wire has fewer flaw detection crack points. It is used as the matrix of tungsten carbide alloy filament. After carburization, the tungsten matrix has fine grains. The filament is not easy to break during the production and use of magnetron coils (i.e., filaments), and the production yield and quality are improved.

The invention relates to an X-ray tube anode target disc, a welding structure and a target disc preparation method. The X-ray tube anode target disc comprises graphite, metal and a welding layer used for welding the graphite and the metal. The graphite and the metal are annular, on two opposite surfaces of the graphite and the metal, one surface is provided with a convex block, and the other surface is provided with a groove matched with the convex block; the welding layer comprises a first welding area, a second welding area and a third welding area which take the axis of the target disc as the radial direction of the target disc; the first welding area, the second welding area and the third welding area are arranged in a step shape, and the second welding area is located between the protruding block and the groove. Wherein the thickness of the welding flux in the first welding area is not equal to that of the welding flux in the third welding area. According to the X-ray tube anode target disc, the porosity of the welding layer is low, the welding quality is good, the connecting strength between graphite and metal is high, the connecting stability is good, and the using working condition requirements of the X-ray tube anode target disc at the high temperature and the high rotating frequency can be effectively met.

The invention provides heat pump comprising a chamber for accommodating electrically charged or chargeable particles, having a thermal conductive wall, and an electrically insulating sink wall. A resistive layer made of electrical resistive material, is positioned outside the chamber with one of its faces proximal to the sink wall. The chargeable particles hit the internal surface of the sink wall, and the thermal conductive wall is in thermal communication with the particles. Thermal fluctuations of the charged particle in the chamber induce variable electric field on the resistive layer, which is harvested into electric current.

The embodiment of the invention provides a foil structure with a carbon nanotube and a preparation method thereof, a cold cathode and an X-ray tube, the foil structure comprises a metal substrate, the metal substrate is provided with a first surface and a first side surface, the first side surface is vertical to the first surface, and the first side surface is located at the edge of at least one side of the metal substrate; the bonding layer is located on the first surface of the metal substrate; the bonding layer is arranged on the first surface of the metal substrate, the multiple carbon nanotubes are located on the first surface of the metal substrate, the bonding layer is used for enhancing the bonding strength of the metal substrate and the multiple carbon nanotubes, the multiple carbon nanotubes comprise a carbon nanotube film and multiple discrete carbon nanotubes, the carbon nanotube film is located on the first surface, and the discrete carbon nanotubes are located on the second surface. The multiple discrete carbon nanotubes are located in the area, close to the first side face, of the first surface, at least the other part of the multiple discrete carbon nanotubes is located outside the carbon nanotube film, orthographic projections of the multiple discrete carbon nanotubes on the metal substrate are located outside the first surface, and the at least the other part of the multiple discrete carbon nanotubes protrude in the direction away from the metal substrate relative to the first side face.

The invention relates to the technical field of field emission cathodes, in particular to an Au nanoparticle modified 4H-SiC nanowire field emission cathode and a preparation method thereof. The method comprises the following steps: (1) performing electrochemical etching on a 4H-SiC wafer, processing a bamboo-like 4H-SiC nanowire array on the surface of the 4H-SiC wafer, and stripping the 4H-SiC nanowire array from the 4H-SiC wafer; (2) carrying out magnetron sputtering on Au nanoparticles on the surface of the 4H-SiC nanowire array obtained in the step (1); and (3) annealing treatment is carried out on the 4H-SiC nanowire array with the Au nanoparticles, the annealing temperature is 200-400 DEG C, the heat preservation time is 50-70 min, and the Au nanoparticle modified 4H-SiC nanowire field emission cathode is obtained. The bamboo-like 4H-SiC nanowire attached with Au nanoparticles is annealed, and the obtained field emission cathode is low in turn-on electric field and high in electron emission stability.

A tungsten alloy wire, a preparation method therefor and a use thereof, and a tungsten carbide alloy filament. The tungsten alloy wire comprises the following components: 0.0005-0.3 wt% of a carbon element, 0.25-2.6 wt% of an M element, 0.05-0.5 wt% of an oxygen element and the balance being a tungsten element and inevitable impurities, and does not comprise a thorium element; and the initial recrystallization temperature of the tungsten alloy wire ranges from 48 %Fc to 56 %Fc, and / or the average size of 80 %Fc recrystallization grains is 1-15 μm. The tungsten alloy wire does not comprise the thorium element, does not cause radioactive contamination, has the initial recrystallization temperature ranging from 48 %Fc to 56 %Fc, and has the processing performance greatly improved compared with that of a thorium-containing tungsten wire; compared with a thorium-containing tungsten wire, the tungsten alloy wire has less flaw detection crack points, when the tungsten alloy wire is used as a substrate of a tungsten carbide alloy filament, grains of the carbonized substrate are fine, the filament is not easy to break in the production and use of a magnetron coil, and the production yield and quality are improved.

According to the zirconia implant surface modification treatment system and the transparent electrode preparation method, the upper end of a glass tube of the system is connected with a pneumatic connector, and the pneumatic connector is connected with a vacuum pump through a pipeline; the transparent electrode is sprayed on the outer wall of the glass tube; the rod-shaped electrode is fixed in the center of the inner side of the lower end of the glass tube; the zirconium oxide implant is inversely arranged above the rod-shaped electrode and is tightly attached to the rod-shaped electrode; the spraying area of the transparent electrode on the outer side of the glass tube completely wraps the zirconium oxide implant, and the spraying area of the transparent electrode on the outer side of the glass tube further wraps a rod-shaped electrode with a preset length; the transparent electrode is electrically connected with a low-voltage electrode of the plasma power supply, the rod-shaped electrode is electrically connected with a high-voltage electrode of the plasma power supply, and the plasma power supply excites plasmas through the transparent electrode and the rod-shaped electrode so as to modify the surface of the zirconium oxide implant. According to the method, the problems of limited use scene, difficulty in visual presentation, poor processing effect, high cost and incapability of meeting immediate processing in the prior art are solved.

The application provides an ICP and CCP combined plasma etching device, method and preparation method, which comprises upper and lower electrodes oppositely arranged in a plasma vacuum reaction chamber; the upper electrode comprises a gas spraying area for spraying gas downward and a edge area surrounding the gas spraying area, the edge area is provided with a plurality of circumferentially uniformly distributed windows, and each window is closed by an insulating piece; wherein a coil is arranged above each insulating piece in one-to-one correspondence, or a coil extending through the above of all insulating pieces along the circumference of the edge area is arranged above the edge area. The application can solve the problems that the existing ICP etching device cannot withstand high-power bias electric field and the CCP etching device is prone to cause relatively low plasma density at the edge of the substrate.

A method for manufacturing a field emission device is disclosed, which includes the steps of forming a primary epitaxial layer on a substrate, forming a plurality of secondary epitaxial structures on the primary epitaxial layer, forming an emitter electrode layer and a dielectric layer located on the primary epitaxial layer between the emitter electrode layer and the plurality of secondary epitaxial structures, sequentially forming a protective layer, an insulating layer, a gate electrode layer, and a planarization layer on the dielectric layer and the plurality of secondary epitaxial structures, etching the planarization layer to expose the dielectric layer and some of the gate electrode layers in some of the secondary epitaxial structures, etching and removing some of the protective layer, the insulating layer, and the exposed gate electrode layer in some of the secondary epitaxial structures to expose some of the secondary epitaxial structures, forming a gate connection electrode layer on the exposed gate electrode layer in the dielectric layer, and forming an anode facing the exposed secondary epitaxial structures and spaced a predetermined distance from the exposed secondary epitaxial structures.

A high-gain photomultiplier tube and a method for manufacturing the same. The photomultiplier tube comprises an upper ceramic substrate and a lower ceramic substrate, with a photocathode, a grid, an anode, and a plurality of electron multipliers disposed between the two ceramic substrates. A metal conductive film is deposited on the surfaces of the upper and lower ceramic substrates opposite the electron multipliers, and the metal conductive film is in mechanical contact with each electron multiplier. The photocathode, grid, anode, and electron multipliers are each connected and fixed to the ceramic substrate via positioning pins. A voltage divider resistor is connected between the photocathode and the positioning pin of the first-stage electron multiplier, between the positioning pins of two adjacent electron multipliers, and between the positioning pin of the last-stage electron multiplier and ground. The potential of each electron multiplier is set by adjusting the voltage divider resistor, and the potential difference between two adjacent electron multipliers and the potential difference between the last-stage electron multiplier and ground is in the form of a differentiated voltage divider. The present invention improves the gain and lifespan of the photomultiplier tube.

A method for manufacturing a field emission device is disclosed, which includes the steps of forming a primary epitaxial layer on a substrate, forming a plurality of secondary epitaxial structures on the primary epitaxial layer, forming an emitter electrode layer and a dielectric layer located on the primary epitaxial layer between the emitter electrode layer and the plurality of secondary epitaxial structures, sequentially forming a protective layer, an insulating layer, a gate electrode layer, and a planarization layer on the dielectric layer and the plurality of secondary epitaxial structures, etching the planarization layer to expose the dielectric layer and some of the gate electrode layers in some of the secondary epitaxial structures, etching and removing some of the protective layer, the insulating layer, and the exposed gate electrode layer in some of the secondary epitaxial structures to expose some of the secondary epitaxial structures, forming a gate connection electrode layer on the exposed gate electrode layer in the dielectric layer, and forming an anode facing the exposed secondary epitaxial structures and spaced a predetermined distance from the exposed secondary epitaxial structures.

A repelling pole assembly is mounted in an arc chamber of an ion implanter. The repelling pole assembly includes a repelling pole, a tubular insert, first and second insulators, a contact member, and a locking member. The repelling electrode has a knob-like body disposed on an inner side of the arc chamber opposite the cathode assembly. The repellent pole shaft is configured to extend through the opening of the wall of the arc chamber to the outside. The repellent pole shaft has a step that narrows the repellent pole shaft. The tubular insert is mounted concentrically with the repellent pole shaft. The first insulator has a collar shape and is attached to the tubular insert such that an inner shoulder of the first insulator abuts an outer side of a wall of the arc chamber. The second insulator is c-shaped and is attached to the first insulator via an outer flange thereof.

To provide an electron source comprising an insulating base, a pair of conductive terminals, an insulating support member, a drift separation member, an emitter-cathode, and one or more heating elements.SOLUTION: Conductive terminals are exposed from a first surface of an insulating base. An insulating support member extends from the first surface of the insulating base. A drift isolation member is disposed at an end of the insulating support member remote from the insulating base. An emitter-cathode is coupled to the drift isolation member. One or more heating elements are coupled to the conductive terminals and the drift isolation member. Combination of the drift isolation member with the insulating support member can prevent stress-induced drift from impacting a position of the emitter-cathode, thereby improving mechanical stability of the electron source.SELECTED DRAWING: Figure 1A

The invention discloses a micro-needle tip annular array cathode electron gun and a preparation method of a cathode thereof, and belongs to the technical field of vacuum electronic devices, the electron gun comprises a cathode, a grid electrode, a double focusing electrode and an anode; specifically, the cathode is of an annular array structure and is divided into two parts by a cone along a symmetry axis, the tangent plane is a bottom surface, the tip end faces inwards, and the cathode is uniformly distributed in a cathode groove, is in a concave surface shape and has a pre-focusing effect; the micro needle tip design of the cathode significantly increases the field enhancement factor, thereby improving the electric field intensity of the tip, improving the emission current density, and reducing the turn-on voltage. The grid is a rhombic grid hole grid mesh, the side length of the rhombus is consistent with the radius of a cathode groove, electric field distribution is optimized by adjusting the acute angle of the rhombus, and the field emission efficiency is remarkably improved; the first focusing electrode is a hyperbolic focusing electrode, the inner wall of the first focusing electrode is in a hyperbolic curve shape, and the focusing effect is enhanced by guiding an electric field line to bend towards the anode along the central axis; the electron gun has high field emission performance and high beam compression ratio.

The invention relates to the field of electron tubes, and discloses a low-evaporation three-layer film cathode assembly for a space traveling wave tube, which comprises a tungsten substrate positioned on a substrate; the first layer of rhenium film and the rhenium film cover the tungsten substrate; the carbon nanotube composite material layer is deposited on the rhenium film; the second osmium-tungsten film is deposited on the carbon nanotube layer; the third osmium-ruthenium film is deposited on the osmium-tungsten film; wherein the thicknesses of the rhenium film, the carbon nanotube layer, the osmium-tungsten film and the osmium-ruthenium film are respectively controlled to be 0.5-2 mu m, 10-50 nm, 50-200 nm and 20-100 nm, and the carbon nanotube composite material layer is obtained by growing on the rhenium film through chemical vapor deposition. By adopting the osmium-tungsten and osmium-ruthenium films with high crystallinity and the optimized carbon nanotube composite material layer, the electron emission efficiency of the cathode assembly is remarkably improved, so that the energy required by electron emission is reduced, and the electron output quantity under the same working condition is increased.

The invention relates to the technical field of vacuum microelectronic devices, in particular to a nano cold cathode electron source array and a preparation method thereof, and the nano cold cathode electron source array comprises a substrate; the bottom cathode electrode strips are arranged in parallel; the bottom gate electrode strips are arranged in parallel; the insulating layer covers and separates the bottom cathode electrode strip and the bottom gate electrode strip, and the insulating layer is located at the top of the substrate; a top cathode electrode and a top gate electrode which are manufactured at the top of the insulating layer are respectively connected with the bottom cathode electrode strip and the bottom gate electrode strip through the first etching through hole and the second etching through hole; and the composite cold cathode comprises a nano cold cathode manufactured at the top of the top cathode electrode and a surface film coating the nano cold cathode. According to the invention, the conductivity, thermal conductivity, work function and other characteristics of the composite cold cathode can be regulated and controlled through the surface film, the field emission characteristic of the nano cold cathode in a cold cathode electron source is improved, large-area preparation can be realized, and the application of the cold cathode electron source in a large-area flat X-ray source device is expanded.

The invention relates to a field emission cathode structure and a preparation method thereof. The method comprises the following steps: obtaining a first substrate layer with a polished surface, wherein the first substrate layer adopts a silicon wafer or a metal sheet; processing the first substrate layer into an arrayed grid mesh; sequentially depositing a metal conductive layer and a diffusion barrier layer on the outer surface of the grid mesh; depositing a SiNx electret layer on the diffusion barrier layer, and regulating and controlling nitrogen vacancy distribution of the SiNx electret layer through a gradient doping process; depositing an Al2O3 gradient heterojunction layer on the SiNx electret layer, and regulating and controlling the oxygen vacancy concentration of the Al2O3 gradient heterojunction layer through a gradient doping process to obtain a composite electret grid mesh; and aligning and bonding the composite electret grid mesh, the arrayed cathode emitter and the insulating layer to obtain the field emission cathode structure. By adopting the method, the high emission efficiency and stability of the cathode can be improved.

An electrical device can include a body having a shape and including one or more components, and first and second electrodes implemented at respective locations of the body and configured to provide first and second engagements with a mounting surface and to allow a settling motion when the electrical device is positioned on the mounting surface. The electrical device can further include a third electrode implemented at a respective location of the body and configured to allow a limited range of the settling motion such that at an end of the limited range of the settling motion, the third electrode provides a third engagement with the mounting surface.

The present invention provides a discharge lamp in which a coating is applied to the electrode surface, allowing the coating function to be effectively performed while the lamp is lit. [Solution] A coating layer 44 containing ceramics is formed on the surface of the body portion 34 of the electrode 30. The ceramics consist of zirconium nitride (ZrN), and the atomic concentration (%) of nitrogen (N) is relatively lower than the atomic concentration (%) of zirconium (Zr).