1107results about "Thermionic cathodes" patented technology

Novel orange phosphors are disclosed having the comprise silicate-based compounds having the formula (Sr,A1)x,(Si,A2)(O,A3)2+x:Eu2+, where A1 is at least one divalent cation (a 2+ ion) including Mg, Ca, Ba, or Zn, or a combination of 1+ and 3+ cations; A2 is a 3+, 4+, or 5+ cation, including at least one of B, Al, Ga, C, Ge, P; A3 is a 1−, 2−, or 3− anion, including F, Cl, and Br; and x is any value between 2.5 and 3.5, inclusive. The formula is written to indicate that the A1 cation replaces Sr; the A2 cation replaces Si, and the A3 anion replaces O. These orange phosphors are configured to emit visible light having a peak emission wavelength greater than about 565 nm. They have applications in white LED illumination systems, plasma display panels, and in orange and other colored LED systems.

Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Srx(M1)1-x]zSiO4●(1-a)[Sry(M2)1-y]uSiO5:Eu2+D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6≦a≦0.85; 0.3≦x≦0.6; 0.85≦y≦1; 1.5≦z≦2.5; 2.6≦u≦3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.

The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes nanotubes which have been subjected to energy, plasma, chemical, or mechanical treatment. The present invention also relates to a field emission cathode comprising carbon nanotubes which have been subject to such treatment. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been subject to such treatment is further disclosed.

A carbon nanotube-based device (40) includes a substrate (10), a number of alloyed, nano-sized catalytic particles (26) formed on the substrate, and an array of aligned carbon nanotubes (15) extending from the alloyed, nano-sized catalytic particles. The nanotube array bends in an arcuate configuation. A method for making the carbon nanotube-based device includes the steps of: providing a substrate; depositing a catalyst layer on the substrate; depositing two different layers of catalyst-doped materials on different areas of the catalyst layer for accelerating or decelerating the rate of synthesis of the aligned carbon nanotube array; annealing the catalyst and the catalyst-doped materials in an oxygen-containing gas at a low temperature; introducing a carbon source gas; and forming an array of aligned carbon nanotubes extending from the alloyed, nano-sized catalytic particles using a chemical vapor deposition method.

A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface. The height of the nanotube bundles above the substrate is determined by the duration of the catalysis step. The nanotube bundles only grow from the patterned regions.

An exemplary touch panel includes a substrate, transparent conductive layers, a capacitive sensing circuit, and conductive wires. The transparent conductive layers are disposed on a surface of the substrate and spaced apart from each other. Each transparent conductive layer includes a carbon nanotube layer. The carbon nanotube layer includes carbon nanotubes. The conductive wires respectively electrically connect the transparent conductive layers to the capacitive sensing circuit. A display device using the touch panel is also provided.

An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108 / cm2. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.

A light filament (206) formed from carbon nanotubes is characterized by high mechanical strength and durability at elevated temperatures, a high surface area to volume ratio, and high emissivity. Additionally, electrical resistance of the light filament does not increase with increasing temperature as much as electrical resistance of metallic light filaments. Accordingly, power consumption of the light filament is low at incandescent operating temperatures. A method for making a light filament made of carbon nanotubes includes the steps of: forming an array of carbon nanotubes (20); pulling out carbon nanotube yarn (204) from the carbon nanotube array; and winding the yarn between two leads (30) functioning as electrodes to form the light filament.

A field emission device and method of forming a field emission device are provided in accordance with the present invention. The field emission device is comprised of a substrate (12) having a deformation temperature that is less than about six hundred and fifty degrees Celsius and a nano-supported catalyst (22) formed on the substrate (12) that has active catalytic particles that are less than about five hundred nanometers. The field emission device is also comprised of a nanotube (24) that is catalytically formed in situ on the nano-supported catalyst (22), which has a diameter that is less than about twenty nanometers.

Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. A method includes forming an electrically conductive interconnect on at least a part of an insulating surface on a substrate; and growing at least one fiber that is coupled to the electrically conductive interconnect. An apparatus includes an electrically conductive interconnect formed on at least a part of an insulating surface on a substrate; and at least one fiber coupled to the electrically conductive interconnect. A kit includes a substrate having an insulating surface; an electrically conductive interconnect formed on at least a part of the insulating surface; and at least one fiber coupled to the electrically conductive

The present invention is directed toward cathodes and cathode materials comprising carbon nanotubes (CNTs) and particles. The present invention is also directed toward field emission devices comprising a cathode of the present invention, as well as methods for making these cathodes. In some embodiments, the cathode of the present invention is used in a field emission display. The invention also comprises a method of depositing a layer of CNTs and particles onto a substrate to form a cathode of the present invention, as well as a method of controlling the density of CNTs used in this mixed layer in an effort to optimize the field emission properties of the resulting layer for field emission display applications.

A flat-panel field emission display comprises a luminescent faceplate, a rigid backplate, and an interposed or sandwiched emitter or cathode plate. A positioning spacer or connector ridge is formed on the rear surface of the faceplate to space the cathode plate a fixed distance behind the faceplate. A peripheral seal is formed between the faceplate and the backplate. The faceplate, backplate, and peripheral seal define an evacuated internal space which contains the cathode plate. The backplate is spaced behind the cathode plate to create a rearward vacuum space in which a getter is located.

An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer. The surface electrode layer includes an oxide containing at least one of Cu, Ni, Co, Ag.

Disclosed are an electron-emitting element having a large operating current at a low operating voltage and excellent operation stability, and an electron source, an image display device and the like utilizing such an electron-emitting element, and further a method of fabricating such an element with few process steps at low cost. A cold cathode member is configured utilizing hybrid particle of a first particle serving to emit electrons into the space and a second particle being in the vicinity of the first particle and serving to control the position of the first particle. In this configuration, it is preferable that the first particle have a higher electron emission efficiency than the second particle and that the second particle be conductive.

A touch panel includes a first conductive layer, a second conductive layer and a capacitive sensing member. The first conductive layer includes a plurality of first conductive lines. The second conductive layer separated from the first conductive layer includes a plurality of second conductive lines. One of the plurality of conductive lines is located above the other plurality of conductive lines. The capacitive sensing member is connected to the first conductive lines. At least one of the first and second pluralities of conductive lines includes carbon nanotube wires. The carbon nanotube wires each include a plurality of carbon nanotubes. Further, a display device using the above-described touch panel is also included.

The present invention is directed toward cathodes and cathode materials comprising carbon nanotubes (CNTs) and particles. The present invention is also directed toward field emission devices comprising a cathode of the present invention, as well as methods for making these cathodes. In some embodiments, the cathode of the present invention is used in a field emission display. The invention also comprises a method of depositing a layer of CNTs and particles onto a substrate to form a cathode of the present invention, as well as a method of controlling the density of CNTs used in this mixed layer in an effort to optimize the field emission properties of the resulting layer for field emission display applications.

The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes which have been treated with an ion beam. The ion beam may be any ions, including gallium, hydrogen, helium, argon, carbon, oxygen, and xenon ions. The present invention also relates to a field emission cathode comprising carbon nanotubes, wherein the nanotubes have been treated with an ion beam. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been treated with an ion beam is further disclosed.

An energy dispersive x-ray and gamma-ray photon counter is described. The counter uses a photon sensor which incorporates a unique photocathode called Advanced Semiconductor Emitter Technology for X-rays (ASET-X) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electrons are multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be energy resolved very accurately, to within ionization statistics. Because the signal is already above the sensor noise it does not have to be noise filtered therefore allowing high-speed counting. The photon sensor can also be used as a device to visualize and image gamma-ray and x-ray sources.

A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.