17results about "Control electrodes" patented technology

The invention relates to an electron extraction method and system for a low-energy electron source. The method comprises the following steps: providing at least one cathode, at least one heating power supply and at least one control electrode; in a first time period, the heating power supply provides heating current for the cathode, so that the temperature of the cathode is increased to be higher than an electron emission threshold value, meanwhile, the potential difference between the control electrode and the cathode is controlled to be a suppression value, and electrons generated by the cathode are prevented from reaching a preset target spot; and in the second time period, the current is stopped from being supplied to the cathode, and meanwhile, the potential difference between the control electrode and the cathode is controlled to reach a guide value, so that electrons emitted by the cathode through waste heat reach the preset target spot and interact with target particles. Cathode heating is controlled in an intermittent energization mode, and accurate extraction of the low-energy scattered electron beam is achieved.

An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

The present application relates to the technical field of vacuum micro-nano electron source, and more particularly to an electron source structure for increasing supply current and a preparation method thereof, which utilizes an insulating layer with uniform thickness to cover the surface of a P-type semiconductor protruding structure in series with an emitter, a control electrode on the outer surface of the covering insulating layer is at a high potential relative to the P-type semiconductor, a large-area carrier depletion layer is formed on the side surface of the protruding structure, and heat-generated electrons in the carrier depletion layer are used to supply field emission current to the emitter, so as to increase the heat-generated current supplied to the emitter per unit substrate area, increase the emission current intensity and current density, and effectively solve the problems of small supply current density, limited emission current intensity and current density in the prior art electron source based on an integrated control electrode of a P-type semiconductor substrate.

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

The extreme ultraviolet (EUV) light source device provided by this invention includes: a discharge cavity maintained under vacuum; an electron beam emitting unit located inside the discharge cavity and used to generate an electron beam; and a metal radiator located inside the discharge cavity and ionized by the electron beam. EUV radiation is achieved in the plasma generated by the metal radiator. The electron beam emitting unit includes: a cathode electrode; multiple emitters located on the cathode electrode and comprising a carbon-based material; and a gate electrode spaced apart from the multiple emitters and located on the multiple emitters, to which a pulsed voltage is applied.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and / or cathode element.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

The present invention is directed to an electrode component with at least two electrodes or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and / or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and / or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and / or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

Provided is an electron gun using a virtual source method that may have a high angular current density, a narrow energy distribution, and stable electron emission characteristics by forming a virtual source inside a thermal electron source (LaB6, CeB6)-based emitter emitting an electron beam.

The present invention addresses the problem of providing a device with which it is possible to adjust the focal point of an electron beam both toward a shorter focal point and toward a longer focal point after an electronic gun was fitted on a counterpart device. The aforementioned problem can be solved by an electron gun including a photocathode, and an anode, the electron gun furthermore comprising an intermediate electrode disposed between the photocathode and the anode, the intermediate electrode comprising an electron-beam passage hole through which an electron beam released from the photocathode passes, and the electron-beam passage hole having formed therein a drift space in which, when an electrical field is formed between the photocathode and the anode due to application of a voltage, the effect of the electrical field can be disregarded.

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

A transistor device may include: an emitter located on a substrate including a dielectric material, the emitter being formed of a metalloid material with a two-dimensional (2D) structure and configured to selectively emit electrons; a source electrode electrically contacting a portion of the emitter; a drain electrode located on the substrate, spaced apart from the emitter, and electrically separated from the source electrode; and a gate structure located on the emitter and configured to apply a gate voltage for controlling electron emission by the emitter to the emitter by modulating a work function of the emitter. The transistor device may include a vacuum region as a path through which emitted electrons move, and may be a three-terminal or four-terminal field-effect transistor configured to adjust emission current by applying a gate voltage to change a Fermi level of the emitter tip of the 2D metalloid material.

An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.