26results about "Control electrodes" patented technology

The invention relates to an electron extraction method and system for a low-energy electron source. The method comprises the following steps: providing at least one cathode, at least one heating power supply and at least one control electrode; in a first time period, the heating power supply provides heating current for the cathode, so that the temperature of the cathode is increased to be higher than an electron emission threshold value, meanwhile, the potential difference between the control electrode and the cathode is controlled to be a suppression value, and electrons generated by the cathode are prevented from reaching a preset target spot; and in the second time period, the current is stopped from being supplied to the cathode, and meanwhile, the potential difference between the control electrode and the cathode is controlled to reach a guide value, so that electrons emitted by the cathode through waste heat reach the preset target spot and interact with target particles. Cathode heating is controlled in an intermittent energization mode, and accurate extraction of the low-energy scattered electron beam is achieved.

An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

The present application relates to the technical field of vacuum micro-nano electron source, and more particularly to an electron source structure for increasing supply current and a preparation method thereof, which utilizes an insulating layer with uniform thickness to cover the surface of a P-type semiconductor protruding structure in series with an emitter, a control electrode on the outer surface of the covering insulating layer is at a high potential relative to the P-type semiconductor, a large-area carrier depletion layer is formed on the side surface of the protruding structure, and heat-generated electrons in the carrier depletion layer are used to supply field emission current to the emitter, so as to increase the heat-generated current supplied to the emitter per unit substrate area, increase the emission current intensity and current density, and effectively solve the problems of small supply current density, limited emission current intensity and current density in the prior art electron source based on an integrated control electrode of a P-type semiconductor substrate.

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

The extreme ultraviolet (EUV) light source device provided by this invention includes: a discharge cavity maintained under vacuum; an electron beam emitting unit located inside the discharge cavity and used to generate an electron beam; and a metal radiator located inside the discharge cavity and ionized by the electron beam. EUV radiation is achieved in the plasma generated by the metal radiator. The electron beam emitting unit includes: a cathode electrode; multiple emitters located on the cathode electrode and comprising a carbon-based material; and a gate electrode spaced apart from the multiple emitters and located on the multiple emitters, to which a pulsed voltage is applied.

The invention discloses a gate structure composite nanometer cold cathode electron source and a manufacturing method thereof, the cold cathode electron source is sequentially provided with an electrode layer on a substrate, the electrode layer comprises a plurality of first electrodes and a plurality of second electrodes, and the first electrodes and the second electrodes are alternately arranged in parallel; the pre-growth layer thin film is arranged on the plurality of first electrodes and the plurality of second electrodes; and a composite nanometer cold cathode, wherein the composite nanometer cold cathode is arranged on the pre-growth layer thin film. The composite nanometer cold cathode electron source has the addressing driving capacity, by applying specific driving voltage to the electrode strips, grid cathode multiplexing can be achieved, and the service life of a device is prolonged. Meanwhile, the device structure has the self-alignment characteristic, the process is simple, and the device has important application prospects in the fields of addressable panel X-ray sources and the like.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

The invention discloses an electrode assembly, an electron gun and electron gun equipment, and relates to the technical field of microwaves and millimeter waves, the electron gun comprises an anode used for accessing a first acceleration voltage signal, the electrode assembly is arranged in the anode, and the electrode assembly comprises a cathode, a first control electrode and a second control electrode; the cathode is provided with an emitting surface for emitting electron beams; the cathode is arranged in the first control electrode; the second control electrode is arranged in the first control electrode, the second edge of the second control electrode faces the first edge of the first control electrode, an electron penetrating gap allowing an electron beam to penetrate through is formed between the second edge of the second control electrode and the first edge, and the electron penetrating gap faces the emitting surface and is communicated with the anode; the first control electrode and the second control electrode are used for accessing a second acceleration voltage signal smaller than the first acceleration voltage signal; according to the invention, the problem that the electronic gun needs a complex and expensive high-power pulse modulation circuit in high-frequency, high-power and short-pulse operation and the problem of noise influence of high-voltage rapid switching can be solved.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and / or cathode element.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

The present invention is directed to an electrode component with at least two electrodes or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and / or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and / or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and / or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

In an electron source including a suppressor electrode having an opening at one end portion thereof in a direction along a central axis and an electron emission material having a distal end protruding from the opening, the suppressor electrode further includes a receding portion receding to a position farther from the distal end of the electron emission material than the opening in the direction along the central axis at a position in an outer peripheral direction than the opening, and at least a part of the receding portion is disposed within a diameter of 2810 μm from a center of the opening. Accordingly, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the same, in which a machine difference in a device performance due to an axial shift between the electron emission material and the suppressor electrode is reduced, are implemented.

The present invention is directed to an electrode component 200 with at least two electrodes 202,204 or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and / or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and / or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and / or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

The present invention discloses an electrode assembly, an electron gun and an electron gun device, relating to the field of microwave and millimeter wave technology. The electron gun comprises an anode for receiving a first acceleration voltage signal, the electrode assembly is arranged in the anode, and the electrode assembly comprises a cathode, a first control electrode and a second control electrode; the cathode has an emission surface for emitting an electron beam; the cathode is arranged in the first control electrode; the second control electrode is arranged in the first control electrode, the second edge of the second control electrode is arranged toward the first edge of the first control electrode, and an electron penetration gap for the electron beam to pass through is formed between the first edge, the electron penetration gap faces the emission surface and is connected to the anode; the first control electrode and the second control electrode are used to receive a second acceleration voltage signal that is smaller than the first acceleration voltage signal; the present invention can solve the problems of the electron gun requiring a complex and expensive high-power pulse modulation circuit and the influence of high-voltage fast switching noise in high-frequency, high-power and short-pulse operation.

Provided is an electron gun using a virtual source method that may have a high angular current density, a narrow energy distribution, and stable electron emission characteristics by forming a virtual source inside a thermal electron source (LaB6, CeB6)-based emitter emitting an electron beam.

The present invention addresses the problem of providing a device with which it is possible to adjust the focal point of an electron beam both toward a shorter focal point and toward a longer focal point after an electronic gun was fitted on a counterpart device. The aforementioned problem can be solved by an electron gun including a photocathode, and an anode, the electron gun furthermore comprising an intermediate electrode disposed between the photocathode and the anode, the intermediate electrode comprising an electron-beam passage hole through which an electron beam released from the photocathode passes, and the electron-beam passage hole having formed therein a drift space in which, when an electrical field is formed between the photocathode and the anode due to application of a voltage, the effect of the electrical field can be disregarded.

The present invention provides an electron gun (901) and a length-measuring SEM (900) capable of suppressing non-uniform temperature distribution in an extraction electrode. The electron gun (901) includes: a charged particle source (1); an extraction electrode (3) that extracts charged particles from the charged particle source (1), allows a part of the charged particles to pass through, and shields another part of the charged particles; and an auxiliary structure (5) that contacts the extraction electrode (3). The length-measuring SEM (900) includes the above-described electron gun (901) and a computer system (920) that controls the electron gun (901).

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

A transistor device may include: an emitter located on a substrate including a dielectric material, the emitter being formed of a metalloid material with a two-dimensional (2D) structure and configured to selectively emit electrons; a source electrode electrically contacting a portion of the emitter; a drain electrode located on the substrate, spaced apart from the emitter, and electrically separated from the source electrode; and a gate structure located on the emitter and configured to apply a gate voltage for controlling electron emission by the emitter to the emitter by modulating a work function of the emitter. The transistor device may include a vacuum region as a path through which emitted electrons move, and may be a three-terminal or four-terminal field-effect transistor configured to adjust emission current by applying a gate voltage to change a Fermi level of the emitter tip of the 2D metalloid material.

An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.

An electron source includes a suppression electrode having an opening at one end in a direction along a central axis and an electron emission material whose tip protrudes from the opening. The suppression electrode has a retreat portion at a position in the outer peripheral direction with respect to the opening, and the retreat portion retreats in the direction along the central axis to a position farther from the tip of the electron emission material than the opening. At least a part of the retreat portion has a structure configured to be within a diameter of 2810 μm or less from the center of the opening. Thus, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the electron gun are realized, in which mechanical differences in device performance due to axial deviation between the electron emission material and the suppression electrode are reduced.

The invention discloses a quadrupole type electron gun, and the electron gun comprises an electron gun housing, and the interior of the electron gun housing comprises a bunching electrode, a cathode, a control electrode, and an anode which are sequentially arranged in the axial direction. Wherein the control electrode is at least used for segmenting the electric field between the cathode and the anode to obtain a first electric field region and a second electric field region, that is, the control electrode in the electron gun can segment the electric field between the cathode and the anode into two parts, including the first electric field region and the second electric field region; therefore, electron beams emitted by the cathode can be accelerated twice through the first electric field area and the second electric field area, the electron beams can be boosted step by step, the situation of high-voltage sparking is avoided, normal operation of the electron gun is guaranteed, and the electron beams are focused twice through the first electric field area and the second electric field area. Therefore, the beam divergence angle is reduced, and the focusing precision of the electron beam is improved while the electron beam is prevented from ablating the anode hole.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

To require reduction of a negative electrode deterioration that may be caused by an ion impact while avoiding a potential gate electrode damage caused by a negative electrode hot spot.SOLUTION: A field emission cathode device 100 and a formation method of the same, contains: a magnetic field discharge negative electrode 200 that is a rotational magnetic field discharge negative electrode 200 containing a magnetic field discharge material to be accumulated to a front surface, is rotated as a center of a shaft, and is electrically grounded; and a flat surface gate electrode 300 that is extended in parallel to the front surface of the rotational magnetic field discharge negative electrode 200, and defines a gap 350 thereto. A gate voltage source 400 is electrically connected to the gate electrode 300, and is arranged so as to generate a magnetic field by being alternately acted with the gate electrode 300. The magnetic field introduces one part of the front surface of the magnetic field discharge negative electrode 200 that is adjacent to the gate electrode 300, and makes an electron 500 to be discharged via the gate electrode 300 toward the gate electrode 300 from the magnetic field discharge material.SELECTED DRAWING: Figure 4