37results about "Control electrodes" patented technology

The invention relates to an electron extraction method and system for a low-energy electron source. The method comprises the following steps: providing at least one cathode, at least one heating power supply and at least one control electrode; in a first time period, the heating power supply provides heating current for the cathode, so that the temperature of the cathode is increased to be higher than an electron emission threshold value, meanwhile, the potential difference between the control electrode and the cathode is controlled to be a suppression value, and electrons generated by the cathode are prevented from reaching a preset target spot; and in the second time period, the current is stopped from being supplied to the cathode, and meanwhile, the potential difference between the control electrode and the cathode is controlled to reach a guide value, so that electrons emitted by the cathode through waste heat reach the preset target spot and interact with target particles. Cathode heating is controlled in an intermittent energization mode, and accurate extraction of the low-energy scattered electron beam is achieved.

An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

The invention discloses a micro-needle tip annular array cathode electron gun and a preparation method of a cathode thereof, and belongs to the technical field of vacuum electronic devices, the electron gun comprises a cathode, a grid electrode, a double focusing electrode and an anode; specifically, the cathode is of an annular array structure and is divided into two parts by a cone along a symmetry axis, the tangent plane is a bottom surface, the tip end faces inwards, and the cathode is uniformly distributed in a cathode groove, is in a concave surface shape and has a pre-focusing effect; the micro needle tip design of the cathode significantly increases the field enhancement factor, thereby improving the electric field intensity of the tip, improving the emission current density, and reducing the turn-on voltage. The grid is a rhombic grid hole grid mesh, the side length of the rhombus is consistent with the radius of a cathode groove, electric field distribution is optimized by adjusting the acute angle of the rhombus, and the field emission efficiency is remarkably improved; the first focusing electrode is a hyperbolic focusing electrode, the inner wall of the first focusing electrode is in a hyperbolic curve shape, and the focusing effect is enhanced by guiding an electric field line to bend towards the anode along the central axis; the electron gun has high field emission performance and high beam compression ratio.

An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

The present application relates to the technical field of vacuum micro-nano electron source, and more particularly to an electron source structure for increasing supply current and a preparation method thereof, which utilizes an insulating layer with uniform thickness to cover the surface of a P-type semiconductor protruding structure in series with an emitter, a control electrode on the outer surface of the covering insulating layer is at a high potential relative to the P-type semiconductor, a large-area carrier depletion layer is formed on the side surface of the protruding structure, and heat-generated electrons in the carrier depletion layer are used to supply field emission current to the emitter, so as to increase the heat-generated current supplied to the emitter per unit substrate area, increase the emission current intensity and current density, and effectively solve the problems of small supply current density, limited emission current intensity and current density in the prior art electron source based on an integrated control electrode of a P-type semiconductor substrate.

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.

The extreme ultraviolet (EUV) light source device provided by this invention includes: a discharge cavity maintained under vacuum; an electron beam emitting unit located inside the discharge cavity and used to generate an electron beam; and a metal radiator located inside the discharge cavity and ionized by the electron beam. EUV radiation is achieved in the plasma generated by the metal radiator. The electron beam emitting unit includes: a cathode electrode; multiple emitters located on the cathode electrode and comprising a carbon-based material; and a gate electrode spaced apart from the multiple emitters and located on the multiple emitters, to which a pulsed voltage is applied.

A field emission cathode device and method for forming a field emission cathode device involve a cathode element having a field emission surface, and a gate electrode element disposed in spaced-apart relation to the field emission surface of the cathode element so as to define a gap therebetween, with the gate electrode element having a plurality of parallel grill members or a mesh structure laterally-extending between opposing anchored ends. A film element laterally co-extends and is engaged with the gate electrode element, with the film element being arranged to allowed electrons emitted from the field emission surface of the cathode element to pass therethrough, and to cooperate with the gate electrode element and the cathode element to form a substantially uniform electric field within the gap and about the field emission surface.

The invention discloses a gate structure composite nanometer cold cathode electron source and a manufacturing method thereof, the cold cathode electron source is sequentially provided with an electrode layer on a substrate, the electrode layer comprises a plurality of first electrodes and a plurality of second electrodes, and the first electrodes and the second electrodes are alternately arranged in parallel; the pre-growth layer thin film is arranged on the plurality of first electrodes and the plurality of second electrodes; and a composite nanometer cold cathode, wherein the composite nanometer cold cathode is arranged on the pre-growth layer thin film. The composite nanometer cold cathode electron source has the addressing driving capacity, by applying specific driving voltage to the electrode strips, grid cathode multiplexing can be achieved, and the service life of a device is prolonged. Meanwhile, the device structure has the self-alignment characteristic, the process is simple, and the device has important application prospects in the fields of addressable panel X-ray sources and the like.

The utility model relates to the technical field of electronic components, in particular to an electronic tube grid leading-out disc and an electronic tube, which comprises an annular disc body and a kovar alloy welding ring, and the annular disc body is provided with a disc surface and an outer wall perpendicular to the disc surface; the kovar alloy welding ring is of an annular cover-shaped structure and comprises a radial annular section and an axial annular section, and the outer edge of the radial annular section vertically extends towards one side of the annular disc body to form the axial annular section; the inner diameter of the axial annular section is larger than the diameter of the disc body, and the inner surface of the radial annular section is tightly connected with the top disc face of the disc body so that the kovar welding ring can be arranged on the outer edge of the disc body in a sealing and covering mode. By arranging the kovar alloy welding ring, the overall strength and the sealing performance of the annular disc body are improved, and the risks of damage and air leakage of the grid electrode leading-out disc are reduced, so that the stability of the electron tube is improved, and the service life of the electron tube is prolonged.

The invention discloses a hollow cathode assembly, which comprises an emitter, a top pore plate, a heater, a gas-guide tube, an auxiliary electrode and a contact electrode, the touch pole is of a cylindrical structure, one end of the touch pole is combined and fixed with a plate body, the center of the plate body is provided with a through hole, and the emitter, the top hole plate, the heater, the auxiliary pole and the gas-guide tube are coaxially arranged with the touch pole; the gas-guide tube is of a hollow tube body structure and is arranged in the touch holding electrode in a penetrating manner; the top hole plate is combined and fixed at one end, close to the plate body, of the gas-guide tube; a small hole is formed in the center of the top hole plate; the heater wraps the peripheral surface of the gas guide pipe; the emitter is located in the air guide pipe and abuts against the top hole plate, a cavity penetrating through the emitter is formed in the center of the emitter, and the cavity is communicated with the small hole; the auxiliary electrode penetrates through the gas guide tube, one end of the auxiliary electrode is located in the cavity, the cavity is of a conical structure, the inner diameter of an opening in the side close to the top pore plate is smaller than that of an opening in the side away from the top pore plate, discharge current oscillation can be reduced, and the stability of the hollow cathode assembly is improved.

This transistor device may comprise: an emitter which is located on a substrate including a dielectric material, made of a metalloid material of a two-dimensional structure, and configured to selectively emit electrons; a source electrode which is electrically in contact with one region of the emitter; a drain electrode which is located on the substrate spaced apart from the emitter and electrically separated from the source electrode; and a gate structure which is located on the emitter and configured to apply, to the emitter, a gate voltage for controlling electron emission by the emitter by modulating a work function of the emitter. The transistor device may be a three-terminal or four-terminal field effect transistor including a vacuum region as a moving path of emission electrons and configured to adjust an emission current by changing the Fermi level of an emitter front end of a two-dimensional metalloid material by applying a gate voltage.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

The invention discloses an electrode assembly, an electron gun and electron gun equipment, and relates to the technical field of microwaves and millimeter waves, the electron gun comprises an anode used for accessing a first acceleration voltage signal, the electrode assembly is arranged in the anode, and the electrode assembly comprises a cathode, a first control electrode and a second control electrode; the cathode is provided with an emitting surface for emitting electron beams; the cathode is arranged in the first control electrode; the second control electrode is arranged in the first control electrode, the second edge of the second control electrode faces the first edge of the first control electrode, an electron penetrating gap allowing an electron beam to penetrate through is formed between the second edge of the second control electrode and the first edge, and the electron penetrating gap faces the emitting surface and is communicated with the anode; the first control electrode and the second control electrode are used for accessing a second acceleration voltage signal smaller than the first acceleration voltage signal; according to the invention, the problem that the electronic gun needs a complex and expensive high-power pulse modulation circuit in high-frequency, high-power and short-pulse operation and the problem of noise influence of high-voltage rapid switching can be solved.

A wire bonded triode for amplification of electromagnetic signals that includes an electron emitter (cathode), control grid, and an electron collector (anode) and having one or more wire bonded structures. A method of making a triode for amplification of electromagnetic signals that includes wirebonding one or more wires to form a wire bonded structure corresponding with one or more of an anode, grid and / or cathode element.

An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

Embodiments include an apparatus, comprising: a conductive base; an insulating substrate; an electron emitter disposed on the insulating substrate; a grid disposed adjacent to the electron emitter, the grid including a first conductive side and a second conductive side separate from the first conductive side; a plurality of posts; wherein: the first conductive side is attached to the insulating substrate through a first group of the posts; the second conductive side is attached to the insulating substrate through a second group of the posts; and the conductive base is attached to the insulating substrate through a third group of the posts.

The present invention is directed to an electrode component with at least two electrodes or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and / or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and / or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and / or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

In an electron source including a suppressor electrode having an opening at one end portion thereof in a direction along a central axis and an electron emission material having a distal end protruding from the opening, the suppressor electrode further includes a receding portion receding to a position farther from the distal end of the electron emission material than the opening in the direction along the central axis at a position in an outer peripheral direction than the opening, and at least a part of the receding portion is disposed within a diameter of 2810 μm from a center of the opening. Accordingly, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the same, in which a machine difference in a device performance due to an axial shift between the electron emission material and the suppressor electrode is reduced, are implemented.

The present disclosure relates to additive manufacturing of ion optical devices. A method of manufacturing an ion optical device includes printing an ion optical device in a printing direction from a first end to a second end. The ion optical device includes a first end support at the first end, a first group of rods extending from the first end support and formed with a first group of rings, a second group of rods extending from the first end support and formed with a second group of rings, and a second end support at the second end to which the first group of rods and the second group of rods extend. Cutting the first end support and the second end support from the ion optical device defines a first circuit through the first group of rods and the first group of rings and a second circuit through the second group of rods and the second group of rings, the first circuit and the second circuit being electrically isolated from each other.

The present invention is directed to an electrode component 200 with at least two electrodes 202,204 or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and / or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and / or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and / or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

Provided is an electron gun using a virtual source method that may have a high angular current density, a narrow energy distribution, and stable electron emission characteristics by forming a virtual source inside a thermal electron source (LaB6, CeB6)-based emitter emitting an electron beam.

The present invention discloses an electrode assembly, an electron gun and an electron gun device, relating to the field of microwave and millimeter wave technology. The electron gun comprises an anode for receiving a first acceleration voltage signal, the electrode assembly is arranged in the anode, and the electrode assembly comprises a cathode, a first control electrode and a second control electrode; the cathode has an emission surface for emitting an electron beam; the cathode is arranged in the first control electrode; the second control electrode is arranged in the first control electrode, the second edge of the second control electrode is arranged toward the first edge of the first control electrode, and an electron penetration gap for the electron beam to pass through is formed between the first edge, the electron penetration gap faces the emission surface and is connected to the anode; the first control electrode and the second control electrode are used to receive a second acceleration voltage signal that is smaller than the first acceleration voltage signal; the present invention can solve the problems of the electron gun requiring a complex and expensive high-power pulse modulation circuit and the influence of high-voltage fast switching noise in high-frequency, high-power and short-pulse operation.

The invention discloses a micro-needle tip annular array cathode electron gun and a preparation method of its cathode, belonging to the technical field of vacuum electronic devices, wherein the electron gun comprises a cathode, a grid, a dual focusing electrode and an anode; specifically, the cathode is an annular array structure, divided into two by a cone along a symmetry axis, the cut surface is the bottom surface, the tip faces inward, is evenly distributed in a cathode groove, presents a concave shape, and has a pre-focusing effect; the micro-needle tip design of the cathode significantly increases the field enhancement factor, thereby improving the electric field intensity at the tip, increasing the emission current density and reducing the turn-on voltage; the grid is a rhombus grid hole grid, the side length of the rhombus is consistent with the radius of the cathode groove, the electric field distribution is optimized by adjusting the acute angle of the rhombus, and the field emission efficiency is significantly improved; the first focusing electrode is a hyperbolic focusing electrode, the inner wall shape of which is a hyperbola, and the focusing effect is enhanced by guiding the electric field lines to bend toward the anode along the central axis; the electron gun of this design has both high field emission performance and high beam compression ratio.

Provided is an electron gun using a virtual source method that may have a high angular current density, a narrow energy distribution, and stable electron emission characteristics by forming a virtual source inside a thermal electron source (LaB6, CeB6)-based emitter emitting an electron beam.

The present invention addresses the problem of providing a device with which it is possible to adjust the focal point of an electron beam both toward a shorter focal point and toward a longer focal point after an electronic gun was fitted on a counterpart device. The aforementioned problem can be solved by an electron gun including a photocathode, and an anode, the electron gun furthermore comprising an intermediate electrode disposed between the photocathode and the anode, the intermediate electrode comprising an electron-beam passage hole through which an electron beam released from the photocathode passes, and the electron-beam passage hole having formed therein a drift space in which, when an electrical field is formed between the photocathode and the anode due to application of a voltage, the effect of the electrical field can be disregarded.

The present invention provides an electron gun (901) and a length-measuring SEM (900) capable of suppressing non-uniform temperature distribution in an extraction electrode. The electron gun (901) includes: a charged particle source (1); an extraction electrode (3) that extracts charged particles from the charged particle source (1), allows a part of the charged particles to pass through, and shields another part of the charged particles; and an auxiliary structure (5) that contacts the extraction electrode (3). The length-measuring SEM (900) includes the above-described electron gun (901) and a computer system (920) that controls the electron gun (901).

A method of manufacturing an ion optical device includes printing the ion optical device in a printing direction from a first end to a second end. The ion optical device includes a first end support at the first end, a first set of rods extending from the first end support and formed with a first set of rings, a second set of rods extending from the first end support and formed with a second set of rings, and a second end support at the second end to which the first and second sets of rods extend. Cutting the first and second end supports away from the ion optical device defines a first electrical circuit through the first set of rods and the first set of rings and a second electrical circuit through the second set of rods and the second set of rings that are electrically isolated from each other.

The present disclosure relates to a field emission device that generates X-rays by emitting an electron beam, and an X-ray generating apparatus using the same, including a semiconductor substrate; a bottom electrode disposed below the semiconductor substrate; an insulating layer disposed above the semiconductor substrate; a gate electrode disposed on the insulating layer; and, a top electrode disposed on the gate electrode; wherein the gate electrode is composed of a material satisfying at least one of a first condition for work function, a second condition for Gibbs free energy of a redox reaction with the insulating layer, a third condition for sublimation energy, and a fourth condition for electron mean free path.