12results about "Image pickup tubes" patented technology

In a photoelectric conversion device, the meta-surface includes a first antenna portion, a first bias portion, a second antenna portion, and a second bias portion. The first antenna portion extends in a first direction and emits an electron in response to incidence of the electromagnetic wave. The first bias portion faces the first antenna portion and is configured to generate an electric field having a component in the first direction between the first bias portion and the first antenna portion. The second antenna portion extends in a second direction intersecting the first direction and emits an electron in response to incidence of the electromagnetic wave. The second bias portion faces the second antenna portion and is configured to generate an electric field having a component in the second direction between the second bias portion and the second antenna portion.

To provide a night vision system along with an image intensifier tube and a method for forming the image intensifier tube.SOLUTION: A night vision system incorporates an image intensifier tube in both the analog and digital channels, and is configured to allow an addressable display in an analog image intensifier tube analog channel to produce an electronically addressable output. The analog image intensifier tube is included within a digital imaging device to present a binary digital signal representing an image or symbol indicia and register the digital representation from the digital imaging device to one or more electronic multipliers of the analog image intensifier tube in the analog channel. The night vision system provided also utilizes a cathode luminescent screen which is a highly efficient light source that reduces system power.SELECTED DRAWING: Figure 1

To provide an imaging device that can further improve an S / N ratio.SOLUTION: An imaging device 1 comprises: a photo cathode 111 having a photoelectric surface 111a; a solid-state imaging element 112 that detects photoelectron discharged from the photoelectric surface 111a and outputs a detecting signal; a vacuum enclosure 113 that holds the photo cathode 111 and the solid-state imaging element 112, in a vacuum state; and a signal processing part 15 that processes the detection signal outputted from the solid-state imaging element 112. The solid-state imaging element 112 detects photoelectron multiplied by photoelectron driving multiplication when accelerated photoelectron is made to incident. The signal processing part 15 that outputs the detection signal performs binarization processing of a detection signal of each frame on the basis of a first threshold relating to preset signal strength so that presence or absence of photon can be identified, and performs photon counting by adding a binarization signal of each frame subjected to the binarization processing.SELECTED DRAWING: Figure 1

The photoelectric conversion device includes an electron emitting member. The electron emitting member has a metasurface that emits electrons in response to the incidence of electromagnetic waves. The metasurface includes a first antenna portion, a first bias portion, a second antenna portion, and a second bias portion. The first antenna portion extends in a first direction and emits electrons in response to the incidence of electromagnetic waves. The first bias portion faces the first antenna portion and is configured to generate an electric field having a component in the first direction between the first antenna portion and the first antenna portion. The second antenna portion extends in a second direction intersecting the first direction and emits electrons in response to the incidence of electromagnetic waves. The second bias portion faces the second antenna portion and is configured to generate an electric field having a component in the second direction between the second antenna portion and the second antenna portion.

The present disclosure relates to a semiconductor process chamber and semiconductor process equipment, and relates to the field of semiconductor devices. The semiconductor process chamber includes a chamber body and a lower electrode structure, the lower electrode structure is disposed within the chamber body, a base of the lower electrode structure is connected to the chamber body via a cantilever, a port member and a mounting member are stacked on the base, a lining is disposed around the outer periphery of the lower electrode structure, one end of the lining is electrically connected to the chamber body and the other end is electrically connected to the port member, a shield member has a first end connected to the port member and a second end connected to an inner wall of the base, an axis of the first end of the shield member does not overlap with an axis of the port member and is offset from the axis of the port member in a direction away from the cantilever, and an RF supply member is inserted within the shield member and connected to the mounting member.

To provide a photodetector capable of reducing the crosstalk between channels.SOLUTION: A photodetector 1 comprises: a tabular incident surface plate 2 on which a photoelectric surface 2s for emitting photoelectrons in accordance with incident light is formed; and a semiconductor element 10 for detecting the photoelectrons emitted from the photoelectric surface 2s, the semiconductor element being disposed to face the photoelectric surface 2s. The semiconductor element 10 has a first portion 11 having an electron incident surface 11s facing the photoelectric surface 2s, the electron incident surface including a plurality of channels ch that are arranged separated from each other. A distance b between the photoelectric surface 2s and the electron incident surface 11s, an interval Δch between the channels ch, and a voltage V applied between the photoelectric surface 2s and the electron incident surface 11s satisfy the formula (1): distance b [mm] / interval Δch [mm]<14.4×voltage V [kV]+60.SELECTED DRAWING: Figure 3

Disclosed in the present disclosure are a semiconductor process chamber and a semiconductor process apparatus, relating to the field of semiconductor apparatus. The semiconductor process chamber comprises a cavity and a lower electrode structure, the lower electrode structure being arranged in the cavity. In the lower electrode structure, a base is connected to the cavity by means of a cantilever, and an interface member and a bearing member are stacked on the base. A lining is annularly arranged outside the lower electrode structure, one end of the lining being electrically connected to the cavity, and the other end of the lining being electrically connected to the interface member. The first end of a shielding member is connected to the interface member, and the second end thereof is connected to the inner wall of the base. The axis of the first end of the shielding member does not coincide with the axis of the interface member, and the axis of the first end of the shielding member deviates from the axis of the interface member in the direction away from the cantilever. A radio frequency feed-in member passes through the shielding member and is connected to the bearing member. The semiconductor process apparatus comprises the semiconductor process chamber. The present disclosure may solve the problems of etching uniformity and the like caused by asymmetric geometric structures of elements in etching apparatuses.

The present invention provides an apparatus, system, and method for fabricating stacked wafers containing an array of image intensifiers that can be pumped on a wafer scale. Wafer-scale fabrication techniques, including bonding, pumping, and compressive sealing, simultaneously form multiple EBCMOS imager anodes with design elements that enable high-voltage operation with optional enhancement of additional gain through TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of the array of EBD dies disposed between a photocathode in a photocathode wafer and an imager anode, which is preferably an EBCMOS imager anode bonded or integrated to an interconnect die in an interconnect wafer.

To provide a photodetector capable of reducing the crosstalk between channels.SOLUTION: A photodetector 1 comprises: a tabular incident surface plate 2 on which a photoelectric surface 2s for emitting photoelectrons in accordance with incident light is formed; and a semiconductor element 10 for detecting the photoelectrons emitted from the photoelectric surface 2s, the semiconductor element being disposed to face the photoelectric surface 2s. The semiconductor element 10 has a first portion 11 having an electron incident surface 11s facing the photoelectric surface 2s, the electron incident surface including a plurality of channels ch that are arranged separated from each other. A distance b between the photoelectric surface 2s and the electron incident surface 11s, an interval Δch between the channels ch, and a voltage V applied between the photoelectric surface 2s and the electron incident surface 11s satisfy the formula (1): distance b [mm] / interval Δch [mm]<14.4×voltage V [kV]+60.SELECTED DRAWING: Figure 3

This imaging device is provided with: a photocathode having a photoelectric surface; a solid-state imaging element for detecting photoelectrons emitted from the photoelectric surface and outputting a detection signal; a vacuum housing for holding the photocathode and the solid-state imaging element in a vacuum state; and a signal processing unit for processing the detection signal output from the solid-state imaging element. The solid-state imaging element detects photoelectrons multiplied by electron bombardment multiplication by the incidence of accelerated photoelectrons, and outputs the detection signal. The signal processing unit performs binarization processing on the detection signal of each frame on the basis of a first threshold related to a signal strength set in advance so as to enable identification of the presence or absence of photons, and performs photon counting by adding the binarized signal of each frame after the binarization processing.

The present disclosure relates to a semiconductor process chamber and semiconductor process equipment, and relates to the field of semiconductor devices. The semiconductor process chamber includes a chamber body and a lower electrode structure, the lower electrode structure is disposed within the chamber body, a base of the lower electrode structure is connected to the chamber body via a cantilever, a port member and a mounting member are stacked on the base, a lining is disposed around the outer periphery of the lower electrode structure, one end of the lining is electrically connected to the chamber body and the other end is electrically connected to the port member, a shield member has a first end connected to the port member and a second end connected to an inner wall of the base, an axis of the first end of the shield member does not overlap with an axis of the port member and is offset from the axis of the port member in a direction away from the cantilever, and an RF supply member is inserted within the shield member and connected to the mounting member.