To provide a
photodetector capable of reducing the
crosstalk between channels.SOLUTION: A
photodetector 1 comprises: a tabular incident
surface plate 2 on which a photoelectric surface 2s for emitting photoelectrons in accordance with incident light is formed; and a
semiconductor element 10 for detecting the photoelectrons emitted from the photoelectric surface 2s, the
semiconductor element being disposed to face the photoelectric surface 2s. The
semiconductor element 10 has a first portion 11 having an
electron incident surface 11s facing the photoelectric surface 2s, the
electron incident surface including a plurality of channels ch that are arranged separated from each other. A distance b between the photoelectric surface 2s and the
electron incident surface 11s, an interval Δch between the channels ch, and a
voltage V applied between the photoelectric surface 2s and the electron incident surface 11s satisfy the formula (1): distance b [mm] / interval Δch [mm]<14.4×
voltage V [kV]+60.SELECTED DRAWING: Figure 3