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4 results about "Electron gain" patented technology

The negative value of electron gain enthaply is given because the energy is given out and the positive value dentos that energy is absorbed. When the electron is gained by an atom.more the electronegative is the element more the energy is given out.when an atom accepts an electron.

An electronic non-affinity friction nanogenerator and a heart disease detector and a preparation method thereof

The present application relates to the technical field of medical devices, in particular to an electronic non-affinity friction nanogenerator and a heart disease detector and a preparation method thereof. The generator comprises a first friction layer, a second friction layer, a first electrode and a second electrode; by adjusting the composition of the same material, the electron gain and loss ability of the material is changed, the first friction layer and the second friction layer are made of the same material, and the composition of the material used by the first friction layer and the second friction layer is different, so that the electron gain and loss ability of the first friction layer and the second friction layer is different, thereby realizing electronic non-affinity friction nanogeneration, using the high sensitivity to pressure to extract the characteristic signal points of the pulse wave, realizing the function of self-powered single-point detection of human heart rate, diastolic pressure and systolic pressure; in addition, it is sensitive and high, and can detect the subtle changes of the pulse wave, and since the pulse wave of a patient with heart disease is different from the normal pulse wave, it can be applied to the preparation of a heart disease detector.
Owner:XIAMEN UNIV

An optimization method for the grid structure of a microgrid gas detector

This invention discloses a method for optimizing the grid structure of a microgrid gas detector, comprising the following steps: 1. Establishing a finite element model of the microgrid gas detector; 2. Converting the obtained target candidate structure set into a Garfield++ readable format and importing it; 3. Generating a specified number and spatially distributed initial ionized electrons within the drift region and tracking their drift trajectory from the generation location to the grid; 4. Avalanche multiplication of penetrating electrons to generate secondary electrons, tracking the motion trajectories of secondary electrons and ions, and calculating the electron gain and ion feedback coefficient; 5. Outputting the original current signal and obtaining the output voltage pulse signal; 6. Analyzing multiple performance indicators obtained under different grid structure parameters, and determining the optimal configuration of the grid structure parameters through the analytic hierarchy process (AHP) to obtain a comprehensive score. This invention is the first to achieve grid structure optimization from the microscopic electronic behavior process, which can significantly reduce trial and error costs and deeply integrate physical simulation and parameter optimization functions.
Owner:XIAN CNNC NUCLEAR INSTRUMENT CO LTD

Single-molecule memristor based on supramolecular assembly and preparation method thereof

ActiveCN121888873BGraphene electrodeRedox Activity
This invention relates to the field of microelectronic device technology, and more particularly to a single-molecule memristor-rectifier device based on supramolecular assembly and its fabrication method. The fabrication method involves covalently linking a guest molecule B to the ends of a graphene electrode pair, ensuring a stable and tight interfacial bond between the supramolecular functional molecule and the electrode. Subsequently, the graphene electrode pair connected to the guest molecule B is immersed in a solution containing a host molecule A and a guest molecule C, forming a supramolecular functional molecule between the graphene electrode pairs. The guest molecule C in the supramolecular functional molecule possesses intrinsic redox activity; its molecular structure itself can undergo reversible electron gain and loss processes, thereby achieving controllable and reversible adjustment of the intramolecular charge distribution. Under the influence of an electric field, the reversible redox reaction of the guest molecule C triggers significant changes in the intramolecular charge distribution and electron transport characteristics, ultimately achieving reliable switching between high and low resistance states of the device.
Owner:NANKAI UNIV

An orp intelligent regulation system for biochemical treatment of water quality

PendingCN122355462ABiofilmWastewater
This invention discloses an intelligent ORP control system for biochemical water treatment, relating to the field of micro-electric field control technology. The invention includes a wastewater tank, columns located inside the tank, and an electrode array. The wastewater tank is horizontally divided into anaerobic, anoxic, and aerobic zones; vertically, it is divided into upper and lower regions. Each column has three water sampling ports for detecting ORP and other required indicators at different depths within the tank. Differential ORP control is implemented based on the distribution of dissolved oxygen and pollutants at the bottom and top of the tank. This invention utilizes nonlinear micro-electric field control to improve the efficiency of electron gain and loss between organic molecules and O2, compensating for electrochemical factors in the biochemical reaction system that hinder pollutant degradation. This enables the degradation of pollutants by the biofilm under local electric field excitation conditions, thereby achieving precise ORP control in the three-dimensional space within the tank.
Owner:TAIYUAN UNIVERSITY OF TECHNOLOGY