The invention relates to the field of
semiconductor drift chamber
detector measurement, in particular to a
system and a method for testing drift characteristics of a
semiconductor drift chamber
detector. The test
system comprises a double-sided probe
station, a
semiconductor drift chamber
detector, a first double-channel digital
multimeter, a second double-channel digital
multimeter, a
laser and an
optical fiber clamp. The double-sided probe
station is used for fixing and connecting the detector, the digital
multimeter respectively applies bias
voltage and acquires data, and the
laser irradiates the back of the detector through the
optical fiber. During testing, the
wavelength of the
laser is selected, the light power is adjusted, the detector is arranged on a
darkroom double-sided probe
station and connected with equipment, after illumination,
voltage is set, current is monitored, the illumination position is adjusted, and whether the transverse drift characteristic is qualified or not is judged according to the current difference of different illumination positions. Compared with a traditional integrated test, the test
system and the test method have the advantages that the test time is effectively shortened, the device iteration speed is improved, and the
lateral drift characteristic of electrons in the semiconductor drift chamber detector can be conveniently represented.