115results about How to "Prevent capacitance" patented technology

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

In order to provide an active matrix display device in which parasitic capacitance or the like is suppressed by forming a thick insulating film around an organic semiconductor film and disconnection or the like does not occur in the opposing electrode formed on the upper layer of the thick insulating film, in an active matrix display device, first, a bank layer composed of a resist film is formed along data lines and scanning lines, and by depositing an opposing electrode of a thin film luminescent element on the upper layer side of the bank layer, capacitance that parasitizes the data lines can be suppressed. Additionally, a discontinuities portion is formed in the bank layer. Since the discontinuities portion is a planar section which does not have a step due to the bank layer, disconnection of the opposing electrode does not occur at this section. When an organic semiconductor film is formed by an ink jet process, a liquid material discharged from an ink jet head is blocked by the bank layer.

A capacitive measurement device including first measurement device designed to carry out a first measurement function in relation to a nearby object, the first measurement device including a body and, a capacity electrode, both of a substantially conductive material, and a guard electrode placed between the body and the capacitive electrode and insulated from the body on the one hand and from the capacitive electrode on the other hand by dielectric elements; an excitation apparatus which maintains the capacitive electrode and the guard electrode to a desired AC electrical potential; a first electronic apparatus, connected to the capacitive and guard electrodes, for measuring the capacitance between the capacitive electrode and the object; and a second measurement device designed to carry out a second measurement function, which are located in the vicinity of either the capacitive or guard electrode, and maintained by the excitation apparatus to a desired AC electrical potential.

There is provided a liquid level detection apparatus for detecting the level of a liquid, including a pair of first electrodes, a pair of second electrodes arranged at a different height to that of the first electrodes, a pair of electrode leads having respective ends connected with the first electrodes and sandwiching therebetween the second electrodes, a grounding unit that changes, between a current-carrying state and an open state, a second electrode current bypass from the second electrodes to a ground line, a first electrode capacitance measurement unit that measures a first electrode capacitance between the first electrodes, with the second electrode current bypass set in the current-carrying state to establish a connection from the second electrodes to the ground line, and a level determination unit that determines the liquid level based on the first electrode capacitance between the first electrodes and a second electrode capacitance between the second electrodes.

A multilayer capacitor array achieves a high ESR because terminal conductors to which internal electrodes in capacitance sections are connected in parallel are connected in series through internal electrodes in ESR control sections to external electrodes. Since in the multilayer capacitor array the internal electrodes extend as far as a boundary between capacitor element portions, electrostriction occurs in an entire laminate including a region near the boundary between the capacitor element portions, with application of a voltage from the outside. Therefore, concentration of stress due to electrostriction is avoided, so as to suppress occurrence of cracking or the like.

A liquid level measuring device for measuring a liquid level of liquid stored in a container may comprise a discharging unit, a first storing space, and an electrode unit. The discharging unit may be configured to discharge the liquid compressed by a pump. The pump may be configured to suck the liquid stored in the container and feed the liquid toward a liquid usage device by pressure. The first storing space may be located in the container and configured to accept the liquid discharged from the discharging unit. The electrode unit may be disposed in the first storing space and comprising a first pair of electrodes configured to measure the liquid level of the liquid within the first storing space. The electrode unit may compose at least a part of a wall surface defining the first storing space.

An enclosure (4) for electrical apparatus (6) has a sealable outlet (8) for partially evacuating the enclosure and a sealable inlet (9)for partially filling the enclosure with a liquid (7) having a vapor pressure at operating temperatures of the apparatus suitable to enhance electrical isolation of the electrical apparatus and suitable to provide convective cooling of the electrical apparatus. The vapor preferably provides a voltage hold-off sufficiently high for operating voltages of the electrical apparatus and has a relative permittivity sufficiently low to prevent stray capacitance in the electrical apparatus above a predetermined limit.

A display device is disclosed. The display device has a first substrate having a thin film transistor connected to a pixel electrode. Further, the display device has a second substrate opposed to the first substrate and having a resin black matrix.

A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source / drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

Exemplary embodiments of the present invention include an electro-optical device including storage capacitors having excellent breakdown-voltage performance to function properly. Exemplary embodiments further include an electro-optical device including data lines, scanning lines, thin film transistors, and pixel electrodes formed on a substrate. The electro-optical device also includes storage capacitors composed of first electrodes electrically connected to the thin film transistors and the pixel electrodes, second electrodes that are arranged to face the first electrodes, and dielectric films arranged between the first electrodes and the second electrodes, and oxidation films obtained by oxidizing part or all of the surfaces of at least one of the first electrodes and the second electrodes.