5results about "Tubes with electrostatic controls" patented technology

The application discloses a nano-channel transistor structure with an auxiliary anode and a driving method. The structure comprises an insulating substrate, a cathode, a gate and an anode which are made on the substrate, and at least one auxiliary anode is additionally arranged on the side of the anode away from the cathode. The auxiliary anode and the anode can have a height difference. By applying different direct-current voltages, a regulating electric field is formed between the anode and the auxiliary anode, the moving direction and speed of the electrons passing through the anode are changed, and the electrons are collected by the anode or directly collected by the auxiliary anode. The application also provides a corresponding driving method. The gate applies a direct-current bias voltage superimposed with a high-frequency modulation signal, and the anode and the auxiliary anode respectively apply direct-current voltages. The amplified high-frequency signals collected by the anode and / or the auxiliary anode are output through a capacitor, and the multi-output signals can be superimposed after the phase compensation system makes the phases of the multi-output signals consistent. The application effectively improves the utilization efficiency of the cathode emitted electrons and the total output current of the device.

The invention belongs to the technical field of micro-nano electronic device manufacturing, and relates to a large depth-to-width ratio nano vacuum channel laser collaborative manufacturing process which comprises the following steps: depositing a metal enhancement layer and a metal seed layer on a substrate; defining a first layer of electrode pattern through a photoresist process; electroplating and depositing a first metal electrode, and annealing; performing laser glazing on the surface of the electrode; the redundant metal layer is removed through ICP etching; depositing an oxide sacrificial layer on the surface of the device, and then sequentially depositing a metal enhancement layer and a metal seed layer on the surface; carrying out pattern definition on a second layer of electrode through a photoresist process; electroplating and depositing a second metal electrode, and annealing; removing the redundant metal layer through ICP (inductively coupled plasma) etching; removing an overlapping region of the first layer of electrode and the second layer of electrode by using femtosecond laser; and removing the oxide sacrificial layer by wet etching, and releasing to form a nano vacuum channel structure. According to the laser collaborative manufacturing process, the device with the nano vacuum channel with the large depth-to-width ratio is prepared.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

Embodiments of the present disclosure provide a vacuum transistor, an array substrate and an electronic device, and relate to the technical field of vacuum electronics, and are used for improving the control of the gate on the vacuum tunneling current and improving the on-off ratio of the vacuum transistor. The vacuum transistor comprises a substrate, a first electrode, a gate, a second electrode and a via hole. The first electrode, the gate and the second electrode are sequentially stacked on the substrate along a first direction and a direction gradually away from the substrate, and the first direction is the thickness direction of the substrate. The first electrode and the gate, and the gate and the second electrode are both spaced apart along the first direction. The via hole penetrates the second electrode and the film layer between the second electrode and the first electrode along the first direction, and exposes the side surface of the first electrode away from the substrate. The orthogonal projection of the gate on the substrate and the orthogonal projection of the second electrode on the substrate overlap.

A solid-state vacuum triode comprises a substrate, two sides of the top of the substrate are respectively provided with an anode and a cathode, the top of the anode is provided with an anode contact layer in ohmic contact with the anode, the top of the cathode is provided with a cathode contact layer in ohmic contact with the cathode, and a dielectric layer is arranged between the anode contact layer and the cathode contact layer. A groove body is formed in the top surface of the dielectric layer, the groove body is communicated with or not communicated with the vacuum area, and a grid is arranged in the groove body; glass packaging outside a vacuum area of a traditional vacuum triode is replaced with solid materials, the defects that the glass packaging of the traditional vacuum triode is poor in reliability and cannot be miniaturized are overcome, meanwhile, a carrier transport area of a traditional all-solid-state semiconductor triode is vacuumized, the problem that the carrier movement of a solid-state triode is scattered, and the reliability of the solid-state triode is improved is solved. According to the solid-state triode, the unlimited movement of current carriers is combined with the miniaturization of a solid-state structure, so that the conversion power and the working efficiency of a traditional solid-state triode are improved.