9 results about "Vacuum gap" patented technology

This invention proposes a velocity-controlled graphene non-reciprocal near-field thermal radiation measurement device and method, belonging to the fields of nanoscale thermal management and photonics technology. A first graphene plate and a second graphene plate are placed parallel to each other in a high-vacuum cavity, with a nanoscale vacuum gap between them. A macroscopic displacement platform is connected to the first graphene plate to control its macroscopic movement velocity along the interface direction. A precision DC power supply is connected to the second graphene plate to inject current to induce microscopic drift velocity of its internal charge carriers. A high-precision temperature sensor is in contact with both graphene plates to monitor their temperature. A near-field heat flux meter is located on the back side of the second graphene plate to measure the radiative heat flux passing through the gap. A calculation and control unit is connected to the macroscopic displacement platform, the precision DC power supply, the high-precision temperature sensor, and the near-field heat flux meter to coordinate and control the velocity parameters and collect and process heat flux data.

The present disclosure regards a method of manufacturing covers (20) for use during sealing of an evacuated gap (6) of a vacuum insulated glass unit (1). The method comprises providing a plurality of covering body workpieces (21), wherein said plurality of covering body workpieces comprises a seal material (22) comprising a glass solder material, wherein the seal material is arranged at a surface of each of the provided plurality of covering body workpieces. Said plurality of covering body workpieces (21) are arranged in a working space. The seal material (22) is heated in the working space to a target temperature (Tar21) by means of a heater (60). The heating may be provided so as to provide an outgassing of the glass solder material (22). The heated covering body workpiece (21) and outgassed glass solder material (22) is thereafter cooled so as to solidify the seal material (22). A method of manufacturing a vacuum insulated glass unit (1) is also disclosed.

The application discloses a method for improving simulation speed of physical quantity of cross-field diode, relates to simulation technology of vacuum electronic device, and is proposed in view of the long simulation time in the prior art. Before solving the electric field force corresponding to each electron particle, the numbering is sorted in sequence from the cathode to the anode according to the positions of all the electron particles at the current time, the numbering is corresponding to the positions of the electron particles, and then the electric field force corresponding to each electron particle is solved according to the partial solution of the diode potential. The method has the advantages that the solving step of the electric field force corresponding to the partial solution of the diode potential in the cross-field diode is improved, the fast sorting algorithm is combined, the simulation speed is greatly improved compared with the general meshless numerical algorithm, and the method is suitable for the vacuum space of the cross-field diode in which the electron particles are injected from the cathode to the space with an arbitrary initial speed and an arbitrary magnetic field value.

An electron beam source includes a vacuum chamber containing a cathode and an anode separated by a vacuum gap forming a local full-voltage capacitive structure storing electrical energy at an operating voltage. A high-voltage power supply charges the capacitive structure without an intervening Marx generator, linear transformer driver, Tesla transformer, pulse-forming network, or pulse-forming transmission line. A triggering arrangement initiates electron emission to produce electron pulses traversing the vacuum gap, with discharged electrical energy transferred predominantly to electrons crossing the gap. In some embodiments, the local capacitive structure stores a majority of total electrical energy stored at the operating voltage in capacitances directly coupled between conductors at cathode and anode potentials. Multi-beam configurations, beam steering, passive synchronization, and contamination management features may be included.

The present application belongs to the technical field of semiconductor devices, and relates to a near-field thermal radiation device with thermal rectification and thermal stability, which is arranged in a vacuum cavity shell and comprises a negative thermal expansion substrate, an emitter, a thermal expansion substrate and a receiver. The negative thermal expansion substrate is arranged on a top wall in the vacuum cavity shell, the emitter is arranged on a side of the negative thermal expansion substrate away from the top wall of the vacuum cavity shell, the thermal expansion substrate is arranged on a bottom wall in the vacuum cavity shell, and the receiver is arranged on a side of the thermal expansion substrate away from the bottom wall of the vacuum cavity shell. The emitter and the receiver are used for near-field radiation heat transfer. By adjusting the temperature of the emitter and the receiver, the negative thermal expansion substrate and the thermal expansion substrate are expanded or contracted, the vacuum gap between the emitter and the receiver is changed, the heat flux of the near-field thermal radiation device is changed, and the near-field thermal radiation device realizes the functions of a thermal diode with thermal rectification and a thermal stabilizer with thermal stability.

A method for forming vacuum gaps on a dielectric substrate uses region-selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hard mask material patterned with a self-assembled monolayer (SAM) and metallic features on the substrate. Due to the presence of the SAM, the hard mask material reaches but does not contact the metallic features, leaving a region on the resulting hard mask that will form a gap when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the regions of the gaps. As a non-conformal coating is deposited on the dielectric substrate, a vacuum gap is formed in the trench as the non-conformal coating enters the trench, but is sealed at the surface of the substrate before completely filling the trench.

This invention provides a nested, zoned, controlled vacuum insert for film-coated injection molds. A first cavity is provided on the core-side main insert, and an external vacuum insert is disposed within the first cavity. A first vacuum gap, communicating with the cavity, is formed between the outer wall of the external vacuum insert and the inner wall of the first cavity. A first air passage is provided on the external vacuum insert, communicating with the first vacuum gap to form an outer air passage. A second cavity is provided on the external vacuum insert, and an internal vacuum insert is disposed within the second cavity. A second vacuum gap, communicating with the cavity, is formed between the outer wall of the internal vacuum insert and the inner wall of the second cavity. A second air passage is provided on the internal vacuum insert, communicating with the second vacuum gap to form an inner air passage. A main air passage, communicating with an external vacuum device, is provided on the insert body. The first and second air passages are connected to the main air passage. The overall design of this invention is simple, with a reasonable distribution of adsorption force, and also incorporates the characteristics of flexible production.

The present application relates to the technical field of high-voltage pulse power switch, and discloses a stacked high-voltage and high-current laser-triggered multi-stage vacuum switch, which comprises a laser-triggered vacuum gap and a plurality of series-connected vacuum breakdown gaps, the top of the laser-triggered vacuum gap and the top of the plurality of vacuum breakdown gaps are fixedly connected with top plates, the bottom of the plurality of vacuum breakdown gaps is fixedly connected with bottom plates, the middle part of the bottom plate is fixedly connected with an anode electrode, the middle part of the top plate is fixedly connected with a cathode electrode, the bottom of the cathode electrode in the laser-triggered vacuum gap is provided with a trigger target, and the cathode electrode is oppositely arranged with the anode electrode. The stacked structure is matched with the externally-penetrating detachable insulating column, when a gap electrode is burnt out or the insulating shell is damaged, only the fastening assembly needs to be disassembled to independently replace the specific gap, so that the maintenance cost is reduced and the maintenance downtime is shortened.

The present disclosure regards a cover (20) for use during sealing a through hole (10, 10a) of an evacuated gap (6) of a vacuum insulated glass unit (1)The cover comprises a covering body (21), a major cover surface (21a) at a solder side of the cover (20), and a seal material comprising a solidified glass solder material (22). The glass transition temperature of the solidified glass solder material is lower than the glass transition temperature of the covering body (21). The cover (20) may comprise one or more predefined evacuation channels (23) having a channel width (Wc), which channel width (Wc) extends between opposing walls (24a, 24b) of the solidified solder material (22). In some embodiments, the solidified glass solder material (22) may cover at least 40%, such as at least 50%, such as at least 70% of the area of the major cover surface. Also, the disclosure relates to a Method of manufacturing a vacuum insulated glass unit, a vacuum insulated glass unit (100) and a method of manufacturing one or more covers (20) comprising solidified solder material.