39 results about "Vacuum gap" patented technology

The invention discloses a near-field radiant heat rectifier based on a high-frequency photoelectric effect, and belongs to the technical field of radiant heat transport regulation and control. The invention aims to solve the problems that an existing magneto-photo-thermal rectification scheme depends on a strong magnetic field, the size is large, integration is difficult, and electromagnetic interference exists. The invention provides a near-field radiant heat rectifier based on a high-frequency photoelectric effect. The near-field radiant heat rectifier comprises a heat emission layer, an emission end time modulation layer, a receiving end time modulation layer, a heat receiving layer and a nanometer displacement platform. A nanoscale vacuum gap is kept between the photoelectric modulation layers of the transmitting end and the receiving end through a nanometer displacement platform, and dielectric constants of the photoelectric modulation layers are subjected to high-frequency periodic modulation through a dual-mode integrated laser. The modulation phase difference is utilized to break the system time reversal symmetry, and an artificially synthesized magnetic field is introduced to realize near-field radiation heat rectification. The device has the advantages of compact structure, full light control, no magnetic interference and the like, and is suitable for being applied to practical engineering scenes of microelectronic heat dissipation, waste heat recovery, thermal logic circuits and the like.

The invention relates to a method and system for detecting the vacuum degree of a vacuum arc-extinguishing chamber based on high-frequency discharge and spectral analysis, and the method comprises the steps: exciting the interior of the vacuum arc-extinguishing chamber to generate field emission current through a high-frequency electric field, and obtaining a high-frequency current peak value through the spectral analysis of the field emission current; the vacuum degree is determined according to a pre-constructed vacuum degree-high-frequency current peak value standard relation curve, a high-frequency power source is connected to a vacuum arc extinguish chamber, the output voltage of the high-frequency power source is gradually increased until a vacuum gap breaks down, the voltage waveform in the process is recorded, and the total current of a loop is calculated; calculating a capacitive current component by combining the equivalent capacitance of the loop; and selecting a stable current section between two dielectric breakdown events in the total current, intercepting a current peak signal in the section, and subtracting the capacitive current component from the total current corresponding to the peak signal to obtain the field emission current. Compared with the prior art, the method has the advantages of high sensitivity, simplicity and convenience in operation, accurate result and the like.

The invention relates to the technical field of variable capacitors, and discloses a grid-controlled semiconductor depletion layer modulation vacuum variable capacitor and a preparation method thereof, and the capacitor comprises an upper electrode which is made of high-purity oxygen-free copper and has a rounding edge structure; the lower electrode is made of oxygen-free copper and also serves as a mechanical support and a heat sink; the vacuum insulating layer is arranged between the upper electrode and the lower electrode; the semiconductor layer is N-type monocrystalline silicon, the thickness of the semiconductor layer is 200 micrometers, the resistivity of the semiconductor layer is 4-6, and impurity concentration of the semiconductor layer is 4-6. According to the invention, the high-voltage-withstanding vacuum gap capacitor and the semiconductor depletion layer capacitor based on MOS gate voltage regulation and control are connected in series and integrated, so that the single device has high-voltage insulation and rapid electric regulation capabilities at the same time creatively; the capacitance value can be continuously and accurately adjusted in the order of tens of nanoseconds to microseconds only by applying a small-amplitude low-voltage signal.

This invention proposes a velocity-controlled graphene non-reciprocal near-field thermal radiation measurement device and method, belonging to the fields of nanoscale thermal management and photonics technology. A first graphene plate and a second graphene plate are placed parallel to each other in a high-vacuum cavity, with a nanoscale vacuum gap between them. A macroscopic displacement platform is connected to the first graphene plate to control its macroscopic movement velocity along the interface direction. A precision DC power supply is connected to the second graphene plate to inject current to induce microscopic drift velocity of its internal charge carriers. A high-precision temperature sensor is in contact with both graphene plates to monitor their temperature. A near-field heat flux meter is located on the back side of the second graphene plate to measure the radiative heat flux passing through the gap. A calculation and control unit is connected to the macroscopic displacement platform, the precision DC power supply, the high-precision temperature sensor, and the near-field heat flux meter to coordinate and control the velocity parameters and collect and process heat flux data.

A method for vacuum gap formation on a dielectric substrate uses area selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hardmask material on a substrate patterned with a self-assembled monolayer (SAM) and metal features. Due to the presence of the SAM, the hardmask material reaches, but does not touch the metal features leaving areas that will form gaps on the resultant hardmask when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the areas of the gaps. When a non-conformal coating is deposited on the dielectric substrate, vacuum gaps form in the trenches as the non-conformal coating enters into the trenches, but closes off at the surface of the substrate prior to the complete filling of the trench.

The invention relates to the technical field of heat-conducting sleeves, and discloses a heat-conducting sleeve and process steps thereof. A heat conduction sleeve comprises an outer pipe which can be made of a heat conduction metal material; the inner sleeve can be made of heat conduction metal materials and is coaxially arranged in the outer pipe in a sleeved mode, and an annular gap is formed between the outer wall of the inner sleeve and the inner wall of the outer pipe. And a heat transfer working medium is arranged in the gap, the gap is a vacuum gap, and the heat transfer working medium realizes rapid heat conduction through phase change in a vacuum environment. The heat-conducting sleeve provided by the invention adopts a double-sleeve structure, so that the bending degree is enhanced, the heat-conducting sleeve can adapt to an annular heat source with a smaller diameter, and the temperature uniformity and the heat dissipation efficiency are improved. And head-to-tail connection of the heat conduction sleeves can be realized, a complete annular heat transfer path is formed, and the power adaptation capability is improved. The structure can be better attached to an annular heat source, the contact thermal resistance is reduced, and meanwhile, higher flexibility is provided for the layout of external heat dissipation devices.

The application relates to a method and device for calculating the development process of series vacuum gap breakdown. The method comprises the following steps: constructing a series vacuum gap equivalent circuit model according to a plurality of vacuum gap parallel circuits; determining a flow conductance coefficient of the vacuum gap based on the series vacuum gap equivalent circuit model, plasma parameters of cathode plasma and an electric field calculation model of the vacuum gap; determining a vacuum gap equivalent resistance based on the series vacuum gap equivalent circuit model, a plasma expansion radius of the cathode plasma and the flow conductance coefficient of the vacuum gap; determining a vacuum gap breakdown voltage based on the series vacuum gap equivalent circuit model and vacuum gap breakdown data; and calculating the development process of the series vacuum gap breakdown based on the vacuum gap equivalent resistance and the vacuum gap breakdown voltage. The method can reduce the application risk of the series vacuum gap at high voltage.

The application discloses a kind of quick closing switch based on real space gap and its using method, quick closing switch is composed of vacuum cavity and electromagnetic forming device, upper cover plate has input drainage plate and is connected with conductive rod, lower cover plate is concave structure, not only as lower electrode is connected with output drainage plate, and have the effect of flyer, between upper and lower cover plate, through ceramic shell insulation;When quick closing switch receives action signal, first make thyristor switch conduction, pulse capacitor group discharges to forming coil, and pulse large current flows in coil, so that forming coil generates a transient magnetic field, and the lower cover plate placed in the magnetic field induces the eddy current opposite to the coil, so that the lower cover plate is deformed at high speed under the action of electromagnetic repulsion and collides with the conductive rod, and the lower cover plate and the conductive rod form a compression joint or solid-phase welding effect, so that the switch is quickly closed, and the whole switch action process is completed within 50 μs, solve the problem of long mechanical switch action time.

This application relates to a circuit breaker testing apparatus, method, computer-readable storage medium, and program product. The apparatus includes: a test module, a recovery voltage source, a vacuum gap located between the recovery voltage source and the circuit breaker under test (TBD), and a bias voltage source connected to the vacuum gap; the bias voltage source provides a bias voltage to the vacuum gap to keep it in a metastable state; the vacuum gap is configured to conduct upon receiving an electromagnetic radiation signal generated by the TBD when the current is zero, thereby establishing a connection path between the TBD and the recovery voltage source; the recovery voltage source provides a recovery voltage to the contacts of the TBD after the connection path is established; the test module acquires electrical parameters of the contacts of the TBD and determines the breaking function result of the TBD based on these electrical parameters. This method can improve the accuracy of circuit breaker testing.

The present disclosure regards a method of manufacturing covers (20) for use during sealing of an evacuated gap (6) of a vacuum insulated glass unit (1). The method comprises providing a plurality of covering body workpieces (21), wherein said plurality of covering body workpieces comprises a seal material (22) comprising a glass solder material, wherein the seal material is arranged at a surface of each of the provided plurality of covering body workpieces. Said plurality of covering body workpieces (21) are arranged in a working space. The seal material (22) is heated in the working space to a target temperature (Tar21) by means of a heater (60). The heating may be provided so as to provide an outgassing of the glass solder material (22). The heated covering body workpiece (21) and outgassed glass solder material (22) is thereafter cooled so as to solidify the seal material (22). A method of manufacturing a vacuum insulated glass unit (1) is also disclosed.

A vacuum gap formation method on a dielectric substrate uses area-selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hard mask material onto a substrate patterned with a self-organizing monolayer (SAM) and metal features. Due to the presence of the SAM, the hard mask material reaches the metal features but does not touch them, leaving areas that form gaps on the resulting hard mask when the SAM is removed from the substrate. Etching the dielectric substrate creates trenches in these gap areas. When a nonconforming coating is deposited onto the dielectric substrate, vacuum gaps form in the trenches as the nonconforming coating enters the trenches but terminates at the substrate surface before completely filling the trench.

The application discloses a method for improving simulation speed of physical quantity of cross-field diode, relates to simulation technology of vacuum electronic device, and is proposed in view of the long simulation time in the prior art. Before solving the electric field force corresponding to each electron particle, the numbering is sorted in sequence from the cathode to the anode according to the positions of all the electron particles at the current time, the numbering is corresponding to the positions of the electron particles, and then the electric field force corresponding to each electron particle is solved according to the partial solution of the diode potential. The method has the advantages that the solving step of the electric field force corresponding to the partial solution of the diode potential in the cross-field diode is improved, the fast sorting algorithm is combined, the simulation speed is greatly improved compared with the general meshless numerical algorithm, and the method is suitable for the vacuum space of the cross-field diode in which the electron particles are injected from the cathode to the space with an arbitrary initial speed and an arbitrary magnetic field value.

The invention discloses a planar coaxial ring gate nano vacuum channel field emission triode device and method, and relates to the technical field of microelectronic devices and vacuum micro-nano electronics, and the device comprises an insulating substrate, a coaxial ring gate disposed on the insulating substrate, and a medium supporting region disposed around the gate. The emitting electrode and the collecting electrode are arranged on the supporting area and are coaxially arranged; a closed annular nano vacuum gap is formed between the inner edges and the outer edges of the two parts to form a transverse vacuum channel; the coaxial annular grid electrode is located in an annular area below the gap, and the coaxial annular grid electrode and the two electrodes are arranged at intervals in the vertical direction and the plane direction. Through the coaxial ring gates, the electric field modulation uniformity is enhanced, gate interception and local hot spots are suppressed, parasitic capacitance is reduced, and transconductance and GHz-level high-frequency response are improved.

The application discloses a picosecond ultrafast ultrashort pulse electron gun, which comprises a light excitation component, a pulsed electron beam emission component, a vacuum shell and an electrode wire; the light excitation component comprises an ultrafast laser and a reflector; the pulsed electron beam emission component comprises a cathode structure, a grid structure and an anode structure; the cathode structure, the grid structure, the anode structure and the reflector form an integral whole and are arranged in the vacuum shell; the grid structure and the anode structure are sequentially arranged opposite to the cathode structure and are separated from each other to form a vacuum gap structure; the cathode structure is provided with a cold cathode; the center of the grid structure and the center of the anode structure are respectively provided with a first through hole and a second through hole; the reflector is arranged in the vacuum shell and is arranged opposite to the anode structure and is located on the side of the anode structure away from the grid structure; the center of the reflector is provided with a third through hole, and the first through hole, the second through hole, the third through hole and the center of the cathode structure are located on the same horizontal line. The application has the characteristics of low power consumption, high efficiency, small size, fast response speed and integration.

The application relates to a kind of vacuum interrupter insulation performance evaluation method, device, equipment and medium, the method comprises: obtaining the field strength data of each virtual grid unit on at least one preset insulation surface of vacuum interrupter, and the topological relationship between each vacuum gap in vacuum interrupter;For each preset insulation surface, according to the field strength data of each virtual grid unit on the preset insulation surface, determine the breakdown probability data of the corresponding vacuum gap of the preset insulation surface;According to the breakdown probability data of each vacuum gap and topological relationship, determine the total breakdown probability data of vacuum interrupter;According to total breakdown probability data, determine whether the insulation performance of vacuum interrupter is qualified.The application can improve the rationality of insulation performance evaluation, thereby improving the reliability of insulation performance evaluation result.

The present application provides a thin film deposition apparatus, a method and a storage medium. The thin film deposition apparatus includes a heating disc, a support ring, a plurality of positioning pins and a vacuum pump. The heating disc is used to heat a wafer to deposit a thin film on a front side thereof. The support ring is nested on an upper side of a periphery of the heating disc to carry the wafer to avoid direct contact between a back side of the wafer and the heating disc. The plurality of positioning pins is disposed between the heating disc and the support ring to lift the support ring to form a vacuum gap between the heating disc and the support ring. The vacuum pump extracts a reaction gas from the back side of the wafer via the vacuum gap during deposition of the thin film to inhibit formation of a back side thin film.

The invention relates to a vacuum arc-extinguishing chamber insulation performance evaluation method and device, equipment and a medium. The method comprises the following steps: acquiring field intensity data of each virtual grid unit on at least one preset insulation surface of a vacuum arc-extinguishing chamber and a topological relation between vacuum gaps in the vacuum arc-extinguishing chamber; for each preset insulating surface, determining breakdown probability data of a vacuum gap corresponding to the preset insulating surface according to the field intensity data of each virtual grid unit on the preset insulating surface; determining total breakdown probability data of the vacuum arc-extinguishing chamber according to the breakdown probability data of each vacuum gap and the topological relation; and determining whether the insulation performance of the vacuum arc-extinguishing chamber is qualified or not according to the total breakdown probability data. According to the invention, the rationality of insulation performance evaluation can be improved, so that the reliability of an insulation performance evaluation result is improved.

Devices include a semiconductor ultraviolet light source; a photocathode attached to the semiconductor ultraviolet light source; an anode; and a separation layer configured to create a vacuum gap between the anode and cathode. The semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode. The construct is configured together as a monolithic integrated element.

An electron beam source includes a vacuum chamber containing a cathode and an anode separated by a vacuum gap forming a local full-voltage capacitive structure storing electrical energy at an operating voltage. A high-voltage power supply charges the capacitive structure without an intervening Marx generator, linear transformer driver, Tesla transformer, pulse-forming network, or pulse-forming transmission line. A triggering arrangement initiates electron emission to produce electron pulses traversing the vacuum gap, with discharged electrical energy transferred predominantly to electrons crossing the gap. In some embodiments, the local capacitive structure stores a majority of total electrical energy stored at the operating voltage in capacitances directly coupled between conductors at cathode and anode potentials. Multi-beam configurations, beam steering, passive synchronization, and contamination management features may be included.

The present application belongs to the technical field of semiconductor devices, and relates to a near-field thermal radiation device with thermal rectification and thermal stability, which is arranged in a vacuum cavity shell and comprises a negative thermal expansion substrate, an emitter, a thermal expansion substrate and a receiver. The negative thermal expansion substrate is arranged on a top wall in the vacuum cavity shell, the emitter is arranged on a side of the negative thermal expansion substrate away from the top wall of the vacuum cavity shell, the thermal expansion substrate is arranged on a bottom wall in the vacuum cavity shell, and the receiver is arranged on a side of the thermal expansion substrate away from the bottom wall of the vacuum cavity shell. The emitter and the receiver are used for near-field radiation heat transfer. By adjusting the temperature of the emitter and the receiver, the negative thermal expansion substrate and the thermal expansion substrate are expanded or contracted, the vacuum gap between the emitter and the receiver is changed, the heat flux of the near-field thermal radiation device is changed, and the near-field thermal radiation device realizes the functions of a thermal diode with thermal rectification and a thermal stabilizer with thermal stability.

A microlens array comprises an array of microlenses on a flat base. A spacer located along the periphery of the microlens array protrudes away from the plane of the base. The microlens array may be arranged in combination with one or more LEDs or pcLEDs with the spacer positioned between the microlens array and the LEDs or pcLEDs and thus spacing the microlenses away from the LED or pcLEDs. Arranged in this manner, the surface of the microlens array facing the LEDs or pcLEDs and light emitting surfaces of the LEDs or pcLEDs together define an air filled or evacuated gap between the microlens array and the LEDs or pcLEDs, which improves the performance of the microlens array in collimating or partially collimating light emitted by the LEDs or pcLEDs.

The invention provides a quasi-isentropic compression device and method indirectly driven by laser, and the device comprises a column cavity, a film and a sample platform, the cylindrical cavity is provided with a laser injection hole and a loading hole, and the film covers the loading hole; a vacuum gap is formed between the thin film and the sample platform; the sample platform is used for placing a to-be-loaded sample; according to the device and the method, the compression state that the peak pressure intensity reaches million barometric pressure, the strain rate is higher than 107 / s and the interface temperature rise is about 1500K can be realized, and the condition that the interface Rayleigh-Taylor instability growth of a high-density sample is promoted by a low-density medium is met, so that an experimental technical basis is provided for material physical property research under extreme conditions.

A method for forming vacuum gaps on a dielectric substrate uses region-selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hard mask material patterned with a self-assembled monolayer (SAM) and metallic features on the substrate. Due to the presence of the SAM, the hard mask material reaches but does not contact the metallic features, leaving a region on the resulting hard mask that will form a gap when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the regions of the gaps. As a non-conformal coating is deposited on the dielectric substrate, a vacuum gap is formed in the trench as the non-conformal coating enters the trench, but is sealed at the surface of the substrate before completely filling the trench.

Improvements to a multipole array of a multi-beam system are provided. At least one of better evacuation improvement, less risk of contamination, and greater manipulation range is achieved by at least one improvement member comprising a rounded edge within the vacuum gap, a deep recess formed in the conductive material, and an electrode within the vacuum gap for generating a repulsive or attractive force to charged particles.

The utility model discloses a communication optical connection device, which is characterized in that a waveguide array unit with at least one waveguide element, an optical active element array unit with at least one optical active element and a mother carrier plate unit with at least one son carrier plate are sequentially calibrated, positioned, connected and fixed into a whole along the X-axis direction of an XYZ three-dimensional space. Gaps among the units are filled with filling materials with the optical index larger than that of air, and the waveguide elements, the optical active elements and the sub-carrier plates are sequentially connected in the X-axis direction through the one-to-one coupling relation of the optical axes or the positioning reference axes to form an optical channel without any air or vacuum gaps. Therefore, the communication optical connection device can be composed of at least one optical channel, and the optical channels are arranged on the YZ plane at intervals to form an array, so that the purposes of high coupling efficiency and high transmission density are achieved.

A method for vacuum gap formation on a dielectric substrate uses area selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hardmask material on a substrate patterned with a self-assembled monolayer (SAM) and metal features. Due to the presence of the SAM, the hardmask material reaches, but does not touch the metal features leaving areas that will form gaps on the resultant hardmask when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the areas of the gaps. When a non- conformal coating is deposited on the dielectric substrate, vacuum gaps form in the trenches as the non-conformal coating enters into the trenches, but closes off at the surface of the substrate prior to the complete filling of the trench.

The smoke inlet pipe comprises a first pipe and a second pipe arranged on the periphery of the first pipe, the first pipe is provided with a first inner side face and a first outer side face which are opposite to each other in the thickness direction, and the first inner side face is a totally-closed face or a nearly-totally-closed face in the circumferential direction; the second pipe is provided with a second inner side surface and a second outer side surface opposite to each other in the thickness direction; a preset gap is formed between the first outer side surface and the second inner side surface; sound insulation cotton is arranged in the preset gap, or when the first inner side face is a fully-closed face, the preset gap is a vacuum gap; the smoke inlet pipe is provided with an inlet end used for leading in smoke and an outlet end used for leading out the smoke, and the smoke is led into the smoke inlet pipe through the inlet end, flows through a circulation channel formed by the first inner side face and then is led out of the smoke inlet pipe through the outlet end. According to the smoke inlet pipe and the range hood provided by the embodiment of the invention, the noise reduction performance of the smoke inlet pipe can be improved, and oil prevention can be considered, so that the use experience of a user is improved.

The invention discloses a communication optical connection device and a manufacturing method thereof. A waveguide array unit with at least one waveguide element, an optical active element array unit with at least one optical active element and a mother carrier plate unit with at least one son carrier plate are sequentially calibrated, positioned, connected and fixed into a whole along the X-axis direction of an XYZ three-dimensional space; gaps among the units are filled with filling materials with the optical index larger than that of air, and the waveguide elements, the optical active elements and the sub-carrier plates are sequentially connected in the X-axis direction through the one-to-one coupling relation of the optical axes or the positioning reference axes to form an optical channel without any air or vacuum gaps. Therefore, the communication optical connection device can be composed of at least one optical channel, and the optical channels are arranged on the YZ plane at intervals to form an array, so that the purposes of high coupling efficiency and high transmission density are achieved.

The invention discloses a power circuit switching method and a hybrid circuit breaker. The hybrid circuit breaker is formed by connecting a vacuum gap and a gas gap in series, when closing operation is carried out, the vacuum gap is firstly switched on, and then the gas gap is switched on after a first preset time; and when the cut-off operation is carried out, the gas gap is cut off firstly, and then the vacuum gap is cut off after a second preset time. According to the invention, precise closing of the capacitor bank or the shunt reactor is realized in cooperation with a phase selection closing technology; and when the capacitor is disconnected, the gap between the moving contact and the static contact of the gas gap has a larger gap distance than the gap between the moving contact and the static contact of the vacuum arc-extinguishing chamber, and the gas gap and the static contact jointly bear the function of recovering voltage after the arc, so that the re-breakdown probability after the arc of the circuit breaker is cut off can be greatly reduced.

The present invention discloses a vacuum interrupter that utilizes multiple contact pieces to divide the arc. By installing n contact pieces between the moving and stationary electrode contacts of the vacuum interrupter, n+1 short vacuum gaps, approximately connected in series, are artificially constructed, where n ≥ 2. During closing, the contact piece is sandwiched between the moving and stationary electrode contacts, ensuring close contact between the moving and stationary electrode contacts, ensuring normal current flow. During opening, after the moving electrode contact is actuated, the contact piece naturally falls under the action of gravity, but is held between the two contacts by the elastic force of a double-hook spring and the tension of a hook ring, dividing the vacuum gap into n+1 approximately series-connected gaps, thereby alleviating the saturation effect of long vacuum gaps.