86 results about "Double barrier" patented technology

Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.

A multi-layer thin film for encapsulation and the method thereof are provided. The multi-layer thin film for encapsulation includes a protective layer composed of aluminum oxide, a single or double barrier layer composed of silicon nitride (SiN_x), and a mechanical protective layer composed of silicon dioxide (SiO₂). The multi-layer thin film can be economically fabricated by using the existing equipment, and has a high level of light transmission over 85% while showing a low level of oxygen and moisture penetration. Additionally, due to superior adhesive strength between the thin films, and high resistance against impacts by heat or ion during a fabricating process, reliability of fabrication is enhanced, and it can thus efficiently used in encapsulating an organic light-emitting device (OLED), a flexible organic light emitting device (FOLED) in a display field, and the cells such as a thin film battery and a solar cell.

Certain example embodiments relate to Ni-inclusive ternary alloy being provided as a barrier layer for protecting an IR reflecting layer comprising silver or the like. The provision of a barrier layer comprising nickel, chromium, and/or molybdenum and/or oxides thereof may improve corrosion resistance, as well as chemical and mechanical durability. In certain examples, more than one barrier layer may be used on at least one side of the layer comprising silver. In still further examples, a Ni_xCr_yMo_z-based layer may be used as the functional layer, rather than or in addition to as a barrier layer, in a coating.

A double-barrier structure based magnetic memory device is disclosed. The double-barrier structure is used to strengthen perpendicular magnetic anisotropy or tunnel magnetoresistance ratio of a magnetic tunnel junction; meanwhile, a three-port device based on a spin orbit torque is formed by combination of metal wire at the bottom; the double-barrier structure of the magnetic memory device comprises a metal oxide barrier layer, a free layer formed by ferromagnetic metal and the other metal oxide barrier layer; a reference layer formed by the ferromagnetic metal and a covering layer formed by non-magnetic metal are deposited on the top of the structure in sequence; the top of the structure is connected with a peripheral circuit through a metal electrode; and the wire at the bottom is formed by metal materials with a larger hall angle and used for data writing. By introducing the double-barrier structure into the magnetic memory device based on the spin orbit torque, the adverse effect on the data writing caused by too high resistance can be effectively avoided, and the thermal stability and the tunnel magnetoresistance ratio of the device are improved; and the good property of the STT-MRAM is maintained by the device, and the double-barrier structure based magnetic memory device is quite suitable for industrial production.

The invention relates to an absorbent product having a longitudinal direction and a transverse direction and comprising a front and a rear end portion (8, 10), an intermediate crotch portion (12), edges extending in the longitudinal direction and in the transverse direction, an upper, liquid-permeable surface layer (2), a lower, liquid-impermeable surface layer (4), an absorbent body (6) arranged between the surface layers (2, 4) and comprising edges in the longitudinal direction and in the transverse direction, liquid barriers (5) extending in the longitudinal direction arranged essentially parallel to those edges of the product running in the longitudinal direction, the liquid barriers (5) each having a free edge (7), side flaps (3) extending in the longitudinal direction outside the liquid barriers (5) and comprising parts of at least one of the surface layers (2, 4), and elastic elements (11; 14; 30) extending in the longitudinal direction and fastened to the liquid barriers (5) or to the side flaps (3), the liquid-permeable surface layer (2) extending in the longitudinal direction of the product at least between the liquid barriers (5). The liquid barriers (5) are, at least in the crotch portion (12) of the product, in the region between their attachment (9) to the absorbent product and their free edge (7), fixed to the adjacent side flap (3) outside the edges of the absorbent body (6), as a result of which the product has double raised leakage barriers arranged along the edges extending in the longitudinal direction.

The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm²˜10000 μm²; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating signal, the collector signal is modulated to be similar to the base current's modulating mode by changing the magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified signal can be obtained under the suitable conditions.

The invention provides an inside and outside walls facing mortar with little saltpetering phenomenon in use and less price; the facing mortar comprises the following components by weight percent: 30-40% of silicate cement, 15-25% of inert filler, 40-50% of sand, 1.0-2.0% of high active mineral filler and 3.0-5.0% of additives. The preparation method of the facing mortar of the invention adopts common silicate cement as cementitious material, and adds high active metakaolin with small particle size to react with excessful calcium hydroxide in the cement and obtain CSH gel so that the existing free Ca<2+> in the cement is greatly reduced, the compactibility of the facing mortar layer is increased and the external water is hard to enter; in addition, a defined amount of nanoscale water repellent agent is added in the mortar so that the channel of external water into the mortar is blocked, double barriers are formed between each other and the generation conditions of saltpetering can be well restrained. The facing mortar of the invention has reasonable formula, simple construction, and lower production cost which is greatly less than that of the existing anti-saltpetering mortar, thus being applicable to the inside and outside walls decoration of common houses or factories.

The invention discloses an MgO double-barrier magnetic tunnel knot with quantum effect, which comprises the following parts from upwards to downwards: first magnetic layer, first tunnel barrier layer, middle magnetic metal layer, second tunnel barrier layer and second magnetic layer. The invention reduces the thickness of middle magnetic metal layer to 0.5-4.5nm through modifying original making technique of MgO double-barrier magnetic tunnel, which is fit for new spin electronic piece, such as diode, rectifier, field effect transistor and TMR sensor.

A technique is presented for providing a double-barrier to formation fluids during drilling operations with a concentric drill string having an inner bore and an annulus. A primary flow control system is used to provide a first barrier to formation fluids in the inner bore and annulus of the drill string. A backup flow control system is used to provide a second barrier to formation fluids. The backup flow control system comprises a backup inner bore shutoff valve and a backup annulus shutoff valve. The backup inner bore shutoff valve is dropped from the surface through the inner bore of the drill string. The backup inner bore shutoff valve has spring-biased tabs that are configured to extend outward to contact an inner surface profile of the inner bore of the drill string. The backup annulus shutoff valve may be provided with the profile to receive the spring-biased tabs from the backup inner bore shutoff valve. When the tabs of the backup inner bore shutoff valve are disposed opposite the profile, the tabs of the backup inner bore shutoff valve are extended outward into the profile by a spring assembly, securing the backup inner bore shutoff valve within the drill string.

The invention discloses an aluminum-free type II superlattice long wave double-barrier infrared detector.According to the specific structure of the aluminum-free type II superlattice long wave double-barrier infrared detector, a superlattice long wave N-type contact layer, a superlattice hole barrier layer, a superlattice long wave absorbing area, a superlattice medium wave electronic barrier layer and a superlattice long wave P-type contact layer are arranged on a GaSb substrate upwards in sequence, a top electrode TiPtAu is located on the superlattice long wave N-type contact layer, and a bottom electrode TiPtAu is located on the superlattice long wave P-type contact layer.By means of the structure, the superlattice long wave infrared detector with small dark current, a high detection rate and a large signal to noise ratio is obtained through design and introduction of aluminum-free type double barriers.

The invention discloses a single-electron magnetic resistance structure and application thereof, such as a spin diode, a spin transistor, a sensor, a magnetic random access memory and a magnetic logic device unit. A GMR (Giant Magnetic Resistance) quantum dot single-electron tunneling magnetic resistance structure comprises a substrate as well as a bottom conducting layer, a first barrier layer, a GMR magnetic quantum dot layer, a second barrier layer and a top conducting layer which are arranged on the substrate. A double-barrier magnetic quantum dot structure comprises a core film layer comprising a bottom electrode, a first barrier layer, a magnetic quantum dot layer, a second barrier layer and a top electrode from bottom to top. Due to the combination with a coulomb blockade effect and a tunneling magnetic resistance effect, the invention controls coulomb energy level resonant tunneling passing through quantum dots by utilizing an external magnetic field to improve tunneling magnetic resistance. The invention can effectively improve the tunneling magnetic resistance effect by utilizing a magnetic resistance design formed by coulomb blockade and improve the signal to noise ratio of device application, and simultaneously reduces tunneling current by utilizing single-electron tunneling, thereby reducing the power consumption of device application.

The invention relates to a high-transparent high-barrier and easy-taking opening sealing cover membrane and a production technology thereof. The membrane layer structure of the membrane sequentially comprises a PET membrane layer, an alumina coating layer, an oil ink layer, an adhesive layer and an EVOH co-extrusion membrane layer from outside to inside; and the EVOH co-extrusion membrane layer comprises a compound layer A, a sub outer layer B, a binding layer C, a middle layer D, a binding layer E, a sub outer layer F and a hot sealing layer G. The high-transparent high-barrier and easy-taking opening sealing cover membrane is obtained through innovation on the EVOH co-extrusion membrane layer formula. The membrane product has the high transparency and low haze, can well display the packed content and attracts consumers. The alumina coating PET and the EVOH co-extrusion membrane layer jointly form a double-barrier layer, so that the membrane has the outstanding moisturizing, air barrier and fragrance preserving functions, and provides safety guarantee to food. A polybutylene easy-taking layer in the hot sealing layer G can be well sealed with various kinds of materials such as PP,PE and PS, the controllable peeling strength can be guaranteed, and the user experience of the consumers is greatly improved.

The present invention discloses a quantum dot resonant tunneling diode for weak light detection and a detection method thereof, wherein, the quantum dot resonant tunneling diode comprises GaAs responsive to visible light or an InGaAs photon absorption region responsive to infrared, self-assembling quantum dots, a thin AlAs double barrier layer, and a GaAs potential well layer. The combination formed by the self-assembling quantum dots, the thin AlAs double barrier layer and the GaAs potential well layer allows the quantum dots to directly participate in the resonant tunneling process, the amplifying capacity of the resonant tunneling process upon photo-generated carriers is greatly improved. The detection method is as follows: filling carriers to the quantum dots to form a metastable state before incident light detection, and further improving the photoresponse capacity of devices. The diode and the detection method have the advantages that: the structure of the device is simple, the size and the density of the quantum dots are within a general growth range, and the manufacture is easy; the device obtains the photon detection with ultra high sensitivity at liquid nitrogen temperature.

The invention discloses a semi-magnet-isolated double-excitation linear synchronous motor. It includes primary iron core, primary winding, secondary iron core, secondary excitation winding, secondary excitation winding slot, permanent magnet, generator and cogging, and secondary excitation winding is wound on the core teeth and placed on the secondary excitation In the winding slot, the characteristic is that there are two permanent magnets for excitation under each magnetic pole, placed obliquely, corresponding to each other, fixed in the embedded groove in the middle of the secondary yoke, and facing upward at an angle of 120°. There is a trapezoidal magnetic isolation air between the adjacent ends of each pair of permanent magnets; the faces of the same polarity of the two permanent magnets under the same magnetic pole are facing the same direction, and the N and S magnetic poles are alternately distributed along the length direction of the secondary yoke; the permanent magnets The upper end is close to the secondary excitation winding slot and connected by the magnetic bridge of the secondary iron core. The integrity of the secondary iron core is good, and the levitation force and thrust of the motor are significantly increased under the same conditions. It is mainly used in various occasions of maglev transportation system drive and logistics line drive.

The invention discloses a method and system for managing a parking lot with a double-barrier-gate outlet. The method includes the steps that when a first vehicle is parked and pays the fee, a signal is sent to a second controller, so that a second barrier gate is closed and a following vehicle is parked behind the second barrier gate; when the first vehicle finishes fee paying operation and is driven out of a first barrier gate, a signal is sent to the second controller so that the second barrier gate can be opened and a signal is sent to a first controller so that the first barrier gate can be closed; when the second vehicle is driven in the position between the first barrier gate and the second barrier gate and pays the fee, a signal is sent to the second controller so that the second barrier gate can be closed. According to the method and system, it is guaranteed that the following vehicle can not follow the first vehicle to be driven out of the parking lot when the first barrier gate is opened.

The invention discloses a trench type double barrier Schottky diode and a preparation method thereof. According to the invention, an active region of the Schottky diode is of a trench structure, the ion implantation concentration of a barrier modulation layer at the top of a table board is higher than the concentration of a trench and a drift layer; the depth of a groove in the active region is dt, and the width is Wt; the width of the table board is Wm, and the junction depth of a p+ region is dp; and the width Wt is greater than 1 micron, the width Wm is greater than 0.5 micron, the depth dtis greater than 0.5 micron, and the junction depth dp is greater than 0.5 micron. By using an image force barrier reducing method, low-barrier Schottky contact is formed on the table board, conventional-barrier Schottky contact is formed on the side wall of the table board, and conducting channels are increased. p+ doping is performed at the bottom of the trench, ohmic contact is carried out, a parallel pn diode is formed, and the surge capacity of the device is enhanced. Meanwhile, the Schottky conducting channels are shielded, and the voltage resistance and high temperature resistance of the device are enhanced. The SIC Schottky diode can reduce the barrier of the device and maintain excellent high voltage resistance, high temperature resistance and surge capability at the same time.

The invention relates to a production method of a crossed multi-barrier-layer co-extruded film. The production method comprises the following steps: blowing out a film bulb through an extruder and a die head, wherein the innermost layer material of the film bulb is a self-adhesive material, feeding the film bulb into a heating pinch roller, pressing the cylindrical film bulb into a double-layer flaky structure, sticking the double-layer flaky structure into an integral structure through the self-adhesive material after heating the double-layer flaky structure through the heating roller, and then, cooling and rolling so as to obtain the crossed multi-barrier-layer co-extruded film. The thickness of the crossed multi-barrier-layer co-extruded film, namely a sheet material, prepared by the production method is even, and production requirements and quality requirements are met. Surface treatment including gravure, flexographic printing, offset printing, gold stamping and the like can be carried out. A symmetrical structure is formed in each layer, so that barrier layers and functional layers are all doubled, the thickness is doubled, and the sheet material meeting the production requirements is prepared. The doubled barrier layers and functional layers can promote the sheet material to have better barrier performance, and the product performance of the sheet material is improved.

The sensor includes following structure: a low layer consists of ferro-magnetic material or semi ferro-magnetic material; a first tunnel insulation layer on the said low layer; an intermediate layer made from ferro-magnetic material or semi metallical magnetic material or non magnetic metal material or semiconductor material on the said first tunnel insulation layer; a second tunnel insulation layer on the said intermediate layer; an upper layer made from ferro-magnetic material or semi ferro-magnetic material. In the structure, tunneling effect occurred in procedure of electrons passing through two tunnel insulation layers at higher TMR value. Magnetic sensors made from the tunnel junction have higher resolution.