Aluminum-free type II superlattice long wave double-barrier infrared detector

A superlattice and double-barrier technology, applied in the field of infrared detectors, can solve the problems of low surface mobility and reduce the electrical performance of devices, and achieve the effect of low surface mobility, reduce dark current and improve electrical performance

Active Publication Date: 2016-07-20
中科爱毕赛思(常州)光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Al element has low surface mobility in molecular beam epitaxy growth, and its chemical properties are active, and it...

Method used

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  • Aluminum-free type II superlattice long wave double-barrier infrared detector

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Embodiment 1

[0017] According to the content of the invention, we have prepared an aluminum-free long-wave double barrier superlattice infrared detector, the specific structure is as follows:

[0018] The superlattice long-wave N-type contact layer has 20 periods, each period is composed of 4nmInAs and 2nmGaSb, and the N-type doping concentration is 10 16 cm -3 ;

[0019] The superlattice hole barrier layer is 20 periods, each period is composed of 2nmInAs and 1nmGaSb, and the N-type doping concentration is 10 15 cm -3 ;

[0020] The superlattice long-wave absorption region has 100 periods, each period is composed of 4nmInAs and 2nmGaSb, and the P-type doping concentration is 10 15 cm -3 ;

[0021] The superlattice medium-wave electron barrier layer has 20 periods, each period is composed of 2nmInAs and 2nmGaSb, and the P-type doping concentration is 10 15 cm -3 ;

[0022] The superlattice long-wave P-type contact layer has 20 periods, each period is composed of 4nmInAs and 2nmGaS...

Embodiment 2

[0024] According to the content of the invention, we have prepared the second aluminum-free long-wave double barrier superlattice infrared detector, the specific structure is as follows:

[0025] The superlattice long-wave N-type contact layer has 80 periods, each period is composed of 6nmInAs and 4nmGaSb, and the N-type doping concentration is 10 17 cm -3 ;

[0026] The superlattice hole barrier layer has 80 periods, each period is composed of 3nmInAs and 2nmGaSb, and the N-type doping concentration is 10 16 cm -3 ;

[0027] The superlattice long-wave absorption region has 800 periods, each period is composed of 6nmInAs and 4nmGaSb, and the P-type doping concentration is 10 16 cm -3 ;

[0028] The superlattice medium-wave electron barrier layer has 80 periods, each period is composed of 3nmInAs and 4nmGaSb, and the P-type doping concentration is 10 16 cm -3 ;

[0029] The superlattice long-wave P-type contact layer has 80 periods, each period is composed of 6nmInAs a...

Embodiment 3

[0031] According to the content of the invention, we have prepared the second aluminum-free long-wave double barrier superlattice infrared detector, the specific structure is as follows:

[0032] The superlattice long-wave N-type contact layer has 50 periods, each period is composed of 4.5nmInAs and 2.1nmGaSb, and the N-type doping concentration is 1×10 17 cm -3 ;

[0033] The superlattice hole barrier layer is 50 periods, each period is composed of 2.4nmInAs and 1.05nmGaSb, and the N-type doping concentration is 1×10 16 cm -3 ;

[0034] The superlattice long-wave absorption region has 400 periods, each period is composed of 4.5nmInAs and 2.1nmGaSb, and the P-type doping concentration is 5×10 15 cm -3 ;

[0035] The superlattice medium-wave electron barrier layer has 50 periods, each period is composed of 2.1nmInAs and 2.1nmGaSb, and the P-type doping concentration is 1×10 16 cm -3 ;

[0036] The superlattice long-wave P-type contact layer has 50 periods, each period ...

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Abstract

The invention discloses an aluminum-free type II superlattice long wave double-barrier infrared detector.According to the specific structure of the aluminum-free type II superlattice long wave double-barrier infrared detector, a superlattice long wave N-type contact layer, a superlattice hole barrier layer, a superlattice long wave absorbing area, a superlattice medium wave electronic barrier layer and a superlattice long wave P-type contact layer are arranged on a GaSb substrate upwards in sequence, a top electrode TiPtAu is located on the superlattice long wave N-type contact layer, and a bottom electrode TiPtAu is located on the superlattice long wave P-type contact layer.By means of the structure, the superlattice long wave infrared detector with small dark current, a high detection rate and a large signal to noise ratio is obtained through design and introduction of aluminum-free type double barriers.

Description

technical field [0001] The invention relates to an infrared detector, in particular to a longitudinal device structure of an aluminum-free type II superlattice long-wave infrared detector, which is applied to a high-performance long-wave infrared focal plane detector and core components of an imaging system. Background technique [0002] The InAs / GaSb II superlattice grown on the GaSb substrate is the preferred material for the third generation of infrared focal plane detectors. In recent years, the United States, Germany, Japan and other countries are vigorously developing infrared detection based on the II superlattice. technology. The InAs / GaSb heterogeneous material system has a very special energy band arrangement structure, and the forbidden band width of InAs is smaller than the valence band offset of InAs / GaSb, so the bottom of the conduction band of InAs is below the top of the valence band of GaSb, forming a type II supercrystal grid. This leads to the separation...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/11H01L31/0352
CPCH01L31/0352H01L31/035236H01L31/035263H01L31/101H01L31/11
Inventor 周易陈建新王芳芳徐志成
Owner 中科爱毕赛思(常州)光电科技有限公司
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