95 results about "Focal plane detector" patented technology

The invention provides an optimized II-type superlattice infrared detector chip bottom filling method, a preparation method and an infrared detector, and belongs to the field of infrared detectors. The problem that the performance of an infrared detector is affected due to the fact that the filling glue filled in an existing bottom filling process is prone to generating holes and finally causes defects during imaging of an infrared focal plane detector chip is solved. The method comprises the following steps that a dielectric layer is deposited on the surface of an epitaxial material after table top etching is completed, and the height of the dielectric layer is larger than the table top etching depth; after the dielectric layer is deposited, the surface of the dielectric layer is polished to be flat; opening holes in the dielectric layer on the surface of the table board; preparing an indium column in the opening of the dielectric layer, and then performing flip-chip bonding interconnection on the indium column at the epitaxial material end and the indium column on the readout circuit; filling bottom filling glue between the dielectric layer and the reading circuit after the reverse welding interconnection, and then curing the filling glue at high temperature; the invention is applied to the type-II superlattice infrared detector.

The invention discloses an infrared focal plane detector nonlinear calibration and parameter calculation method based on flat field data, which comprises the following steps: collecting flat field and dark field sequences at different integration times, and calculating a group mean value and a group difference for each pixel; fitting a linear baseline by using a low-brightness area, constructing a ratio sequence, representing deviation of a mean value by using a quadratic multiplicative model, and linearizing a measurement signal of a pixel; counting the covariance of the pixel and the neighborhood offset of the pixel in each integration time, fitting to obtain a space coupling model changing along with a mean value, and adding back the variance dispersed by the neighborhood to obtain a corrected variance; photon transfer curve fitting is carried out on the corrected variance-mean value data, and pixel-by-pixel gain and readout noise are obtained; pixel response heterogeneity is calculated on the highlight unsaturation and the flat field, and the full-well charge and the dynamic range are deduced according to the saturated DN value. According to the invention, key parameters of pixel-by-pixel gain, readout noise, PRNU, full-well charge, dynamic range and the like can be stably obtained.

According to the method, a cavity black body and a diaphragm hole form an infrared light source, coarse adjustment of a two-dimensional displacement mechanism and fine adjustment of a three-dimensional high-precision displacement mechanism are combined, and an imaging optical system and a narrow-band filter are matched, so that the crosstalk test of a detector with the pixel spacing of 15 microns and below is realized. Through multi-area sampling, multi-band coverage testing and weighted average data processing, the problem that a traditional small-light-spot system is limited by optical diffraction limits is effectively solved, the testing accuracy is remarkably improved, the deficiency of a crosstalk detection method of a small-pixel infrared focal plane detector is overcome, detector evaluation means are enriched, and the detection efficiency is improved. The method is suitable for performance evaluation of infrared imaging system core devices.

The invention relates to the technical field of metallurgical chemical equipment monitoring, and particularly discloses a gas purification heat exchanger online diagnosis system and method based on multi-source data fusion, an infrared thermal imaging data acquisition unit adopts an explosion-proof uncooled infrared focal plane detector and is used for continuously acquiring temperature field distribution infrared video streams on the outer surface of a heat exchanger; the process parameter sensing unit comprises a temperature sensor, a pressure sensor and a flow sensor, and all sensor signals are accessed to a DCS (Distributed Control System) through a PROFIBUS-DP bus; the data integration and processing unit is an industrial server deployed in a control room, acquires process parameter time sequence data from a DCS system in real time through an OPC UA protocol, and receives an infrared video stream through a private network; according to the method, accurate identification and positioning of early hidden faults are realized, the situation that small diseases drag large disasters is avoided, the diagnosis result visualization degree is high, and the operation and maintenance efficiency and the response speed are improved.

The invention relates to the technical field of refrigeration type infrared focal plane detector imaging, in particular to a data transmission method of a refrigeration type infrared focal plane detector imaging system, which comprises the following steps of: receiving LVDS (Low Voltage Differential Signaling) data acquired by a refrigeration type infrared focal plane detector in an imaging system consisting of a PC (Personal Computer) upper computer, a power supply, a main control board and the refrigeration type infrared focal plane detector; the method comprises the following steps: performing camera link conversion, transmitting a converted differential signal to an upper computer through a video cable for imaging, performing 2 * 2 pixel image array transmission on LVDS (Low Voltage Differential Signaling) data by utilizing an FPGA (Field Programmable Gate Array), representing the position of each pixel in the 2 * 2 pixel image array by utilizing four different identifiers, digitalizing each pixel by adopting 19-bit data, and transmitting the digitalized data to the lower computer. 19-bit digital data of one pixel is transmitted in a parallel transmission mode. According to the invention, the 2 * 2 pixel image array is adopted for data transmission, so that the algorithm operation of the pixel data is realized, and the image processing is facilitated; four-channel serial LVDS differential signals are adopted to transmit data, and external electromagnetic interference can be effectively offset.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The invention discloses a high-performance infrared focal plane detector based on a super-structure lens effect, and belongs to the technical field of photoelectric detection. The core of the invention lies in providing a novel detector architecture which carries out integrated collaborative design on metal microcavity resonance and a super-structure lens condensation effect at a pixel level. Multi-physical field collaborative optimization is carried out on a quantum well material, a metal microcavity structure and an array period, so that periodically arranged detector pixels simultaneously have dual functions of microcavity resonance frequency selection and microlens wavefront regulation and control. On one hand, incident infrared light is converged through a super-structure lens effect induced by an array period, and the energy density of a light field is enhanced; on the other hand, incident light coupled into the metal microcavity can excite a resonance mode in the microcavity, and the active area light field is further locally strengthened. According to the invention, additional optical elements are not needed, the process is completely compatible with the existing focal plane technology, and a brand new technical approach is provided for high-performance narrow-band infrared detection.

The application belongs to InGaAs infrared focal plane detector, and provides a preparation method of a new type of InGaAs short-wave infrared detector. After growing P electrode, N electrode, P type metal and N type metal to form ohmic contact, growing connecting layer metal, thinning and polishing InP substrate to form a flat mirror surface, corresponding photoetching on a readout circuit wafer, growing lower electrode metal and indium column, and then carrying out metal stripping; InP epitaxial wafer PDA and readout circuit are uniformly glued, protected, and diced to form independent single; PDA and readout circuit are inversely interconnected to form an infrared detector, and secondary polishing treatment and growth of anti-reflection coating are carried out. The indium column is grown at the end of the readout circuit, and one-step photoetching can be completed. The PDA chip end can reduce the growth of the lower electrode, the growth of the indium column, and the growth of the corresponding passivation layer and the opening of the passivation layer. The process steps are reduced, the probability of defects is reduced, the production cost is reduced, and the final yield of the product is further improved.

The invention relates to the technical field of scanning laser radars, and discloses a compact scanning laser radar optical system, which comprises a laser emission optical module for emitting a laser beam, a laser receiving optical module for receiving a reflected laser after the laser beam is subjected to diffuse reflection by a target object, and a control optical module for controlling the laser receiving optical module, the laser receiving optical module comprises a half pentagonal prism and a receiving cylindrical mirror, and a first included angle is formed between the receiving cylindrical mirror and the normal direction of the light path of the reflected laser; the reflected laser sequentially passes through the receiving cylindrical mirror and the half pentagonal prism and then is imaged to the focal plane detector module, the focal plane detector module comprises a cylindrical reflection strip group, the cylindrical reflection strip group is used for reflecting the deviated reflected laser, and the laser emission optical module, the laser receiving optical module and the focal plane detector module are assembled in the cup-shaped column cover. According to the invention, the structure is simplified, the size is compact, and the distance measurement precision is improved.

The application provides an avalanche photodiode focal plane array pixel gain simulation method and device, the method comprises the following steps: respectively under dark field conditions and light field conditions, a varying bias voltage is applied to an avalanche photodiode focal plane array, and a dark current response curve and a photocurrent response curve of an anode current of a pixel unit in the focal plane array are obtained respectively; under different bias voltages, a signal difference between the dark current response curve and the photocurrent response curve is extracted, and the pixel gain of the pixel unit is determined according to the signal difference. The pixel gain simulation method provided by the application can accurately obtain the pixel gain and is suitable for a silicon-based APD focal plane detector array with different pixel unit structures. In addition, the method can reveal the influence of internal electric field distribution changes caused by factors such as bias voltage on the array gain, thereby providing a theoretical basis and technical path for device optimization design in actual application scenarios.

The invention belongs to the technical field of focal plane detector readout circuits, and discloses a predictive search type SARADC circuit design method suitable for a focal plane detector, which comprises a sampling switch, a DAC array, a comparator, a predictive search module and a digital output module. Compared with a traditional SARADC circuit architecture, the SARADC circuit architecture has the advantages that a predictive search algorithm is used, the correlation of amplitude values between adjacent pixels is utilized, the number of ADC comparison times needed when the amplitude information of the current pixel is digitally quantized is greatly reduced, the requirements of an ADC circuit module for designing a high-speed DAC and a high-speed comparator are avoided, and the area and power consumption are reduced. By using the amplitude value conversion result of the adjacent pixels, the comparison frequency of the current pixel comparator is reduced, and the ADC conversion period of a single pixel is reduced, so that the output frame frequency of the whole focal plane detector reading circuit is improved.

This invention discloses a multispectral infrared imaging gas cloud concentration detection system and method, comprising a data acquisition and processing computer, a focal plane detector, a drive motor, a filter wheel, and an imaging lens. The detection system requires pre-calibration according to "different types of gas - different concentrations - different temperatures." During detection, two identical systems, system a and system b, placed perpendicular to the gas cloud to be measured, work together to acquire two infrared images of the gas cloud at mutually perpendicular angles. This allows the determination of the thickness of the gas cloud at different pixel locations in the two perpendicular directions, thus obtaining the actual average concentration of the gas cloud at different pixel locations. This invention, through response calibration under different concentrations and background temperature differences within a gas chamber of a specific length, obtains the relationship between gas cloud concentration, thickness, temperature difference with the background, and the response difference between the gas cloud and the background, achieving remote sensing of the spatial concentration distribution and diffusion area of ​​the target gas.

This invention discloses a method for fabricating a four-color focal plane detector and a method for acquiring four-color images. By designing the working wavelength ranges of the substrate, the first-color filter, and the second-color filter, a 2×2 grid periodically arranged four-color micro-filter array optical device is fabricated. The four-color micro-filter array optical device is suspended and integrated onto the focal plane of the detector to form a four-color focal plane detector. The four original monochrome images output by the four-color focal plane detector are subjected to image super-resolution reconstruction to obtain four full-resolution monochrome images. The four full-resolution monochrome images are then subjected to working wavelength deintersection processing to obtain four full-resolution monochrome images with no overlap in their working wavelengths. This invention enables the fabrication method and four-color image acquisition method of the four-color focal plane detector to simultaneously acquire four full-resolution monochrome images with no overlap in their working wavelengths. It has the advantages of simple manufacturing process, compact structure, high integration, snapshot imaging capability, and low cost.

The invention relates to the technical field of optical imaging, and provides a multi-scene multispectral camera system, which comprises a visible light camera assembly, a short-wave infrared camera assembly, a long-wave infrared camera assembly, a display device, a power supply system and a cable, and is characterized in that the short-wave infrared camera assembly adopts an InGaAs uncooled infrared focal plane detector; the long-wave infrared camera assembly adopts a vanadium oxide uncooled infrared focal plane detector, and the display device is equipped with a gigabit network port and an HDMI interface. The detector product has the advantages of being low in power consumption, small in size, free of TEC and the like, is suitable for vehicle-mounted low-cost and low-power-consumption application occasions with low power consumption and sensitive size, ensures that the whole process is autonomous and controllable and stable in supply through localized integration, polaroid adjustment innovation and advanced image fusion technologies, and has a wide application prospect. The efficient and stable application of the multispectral camera in vehicle equipment is realized, and the image quality and the environmental adaptability are remarkably improved.

The invention discloses an APD focal plane pixel circuit with a ToF calibration function, and relates to the technical field of photoelectricity and microelectronics. The circuit is composed of a T-type transimpedance amplifier circuit 1, a time discrimination circuit 2, a flight time calibration circuit 3, a pulse width voltage conversion circuit 4 and an output voltage buffer 5. The invention provides a small-area, low-power-consumption and high-precision ToF detection scheme, the structure is simple, the method is particularly suitable for a focal plane detector, and the requirements of limited pixel area and power consumption can be met; by reasonably designing a feedback network of the T-type trans-impedance amplifier, the T-type trans-impedance amplifier has the advantages of high gain and small area, and is adaptive to a focal plane detector with limited pixel area; according to the ToF calibration scheme combining the Schmitt trigger and the pulse width voltage conversion circuit, the walking error can be calibrated at the cost of small area and power consumption, and the ToF detection precision can be effectively improved without complex means.

The invention provides a medium-short wave high-resolution on-chip polarization imaging processing method suitable for low-altitude unmanned aerial vehicle detection, which solves the technical problems of non-uniform noise, blind pixel and the like of a medium-short wave detector, and comprises the following steps: S1, adopting a medium-short wave focal plane detector integrated by a micro polarizer array to realize simultaneous imaging in four polarization directions; s2, performing multi-segment and scene joint non-uniformity correction on the four-polarization direction image obtained in the S1; s3, blind pixel detection and replacement of weak and small target protection are carried out on the image corrected in the S2; s4, super-resolution reconstruction is carried out on the image processed in the step S3 by adopting an attention enhanced residual network; s5, obtaining a polarization degree image and a polarization angle image through Stokes vector calculation according to the super-resolution image in the S4, and constructing a multi-feature fusion matrix in combination with infrared radiation intensity information; s6, integrating the polarization characteristics and the super-resolution image by adopting a self-adaptive weighted fusion strategy; and S7, 8-bit dynamic mapping based on human visual characteristics is performed on the fused image in the S6.

The embodiment of the present application discloses an infrared focal plane detector, a preparation method thereof and a plane detection device. The infrared focal plane detector comprises a substrate, a readout circuit layer and a detection layer which are stacked on the substrate. The readout circuit layer comprises readout circuits of each detection unit. The detection layer comprises a first electrode, a second electrode which is oppositely arranged with the first electrode, and a photoelectric conversion layer which is arranged between the first electrode and the second electrode. The first electrode comprises a first functional layer which is arranged on the readout circuit layer and a second functional layer which covers the first functional layer. The first functional layer of each detection unit is electrically connected with the readout circuit, and the first functional layer comprises a plurality of openings which penetrate through the first functional layer. The embodiment provided by the present application increases the light transmittance on the basis of ensuring the conductivity of the first electrode, effectively improves the imaging quality of the infrared focal plane detector, and has practical application value.

The invention discloses a two-stage quantization digital readout circuit structure and a detection system, and relates to the infrared focal plane detector technology, the readout circuit structure comprises a plurality of groups of pixel columns, each group of pixel columns comprises a plurality of pixel units, each pixel unit comprises a pixel-level ADC, and the pixel-level ADC is connected with the pixel-level ADC. Each group of pixel columns corresponds to a column of switched capacitor amplifiers and a column-level ADC (Analog to Digital Converter); the column switched capacitor amplifiers, the column-level ADCs and pixel units of the infrared detectors are connected to a digital output control module, and the column switched capacitor amplifiers and the column-level ADCs are connected to a digital code register; and the digital code register and the digital output control module are output through a plurality of groups of parallel-serial conversion circuits and low-voltage differential signal LVDS (Low Voltage Differential Signaling) circuits. According to the invention, a first-order incremental sigma-delta ADC (IADC) integrating capacitor and a common capacitor module in a column-level switched capacitor amplifier are combined, so that on the premise of realizing high charge resolution, more direct coarse and fine quantization output digital code matching output is realized, and the quantization speed is higher.

A preparation method of an infrared detector chip based on a gold-free electrode relates to the technical field of infrared detection, and comprises the following steps: preparing a required to-be-metallized infrared detector wafer, sputtering and depositing a gold-free electrode film layer on the to-be-metallized infrared detector wafer; depositing a gold-free electrode film layer with a certain thickness on the surface of the wafer by setting parameters of sputtering power, gas flow and heating temperature, and completing preparation of a metal electrode after a stripping process; the infrared detector wafer after electrode preparation is subjected to dilute acid solution post-treatment, an oxide layer and impurities on the surface of the metal electrode are removed through a dilute acid solution, and preparation of the infrared detector wafer is completed; and finally, cutting the infrared detector wafer to complete the preparation of the infrared detector chip. According to the invention, good ohmic contact between the electrode and an infrared focal plane detector wafer and good flip-chip interconnection between the electrode and high-purity indium are realized, and the electrode is used as a low-cost choice for replacing a system taking Au as a core electrode.

The invention relates to the technical field of semiconductor devices, in particular to an InGaAs focal plane detector based on DTW integration and a preparation method of the InGaAs focal plane detector, and the InGaAs focal plane detector comprises a silicon-based readout circuit wafer layer, an InGaAs detector array chip layer, N electrode metal and an optical filter film structure layer. The first indium bump array and the second indium bump array are bonded in a flip-chip manner and are filled and fixed by an organic polymer medium; the N electrode metal is respectively connected with the n-InP contact layer and the N electrode region; and the optical filter film structure layer is arranged on the back surface of the InGaAs detector array chip layer. According to the DTW integration technology based on the In salient point array, a traditional N hole structure and a preparation technology are removed, the N electrode is led out from the back face to the N electrode of the reading circuit after the substrate is removed, the technology steps can be simplified, the area of a detector array chip is reduced, a wafer-level machining platform is connected, and the condition for constructing a high-performance optical filtering structure is achieved.

The invention discloses a high-precision low-power-consumption time-to-digital conversion circuit for a focal plane detector. The high-precision low-power-consumption time-to-digital conversion circuit comprises a control module, a measurement module and a decoding module, the control module is externally connected with a start signal START and an end signal STOP, and after the START is effective, the control module generates and outputs a measurement module reset signal RDN, a measurement module start signal START1 and a measurement module end signal STOP1; the measurement module starts timing after receiving the START1, stops timing after receiving the STOP1, and generates a 16-bit fine counting temperature code Tlt; 15: 0gt; and an 8-bit coarse count code tlt; 7: 0gt; ; and the decoding module decodes the 16-bit fine count code and the 8-bit coarse count code generated by the measurement module and outputs 12-bit binary time digital information. The method greatly reduces the requirements of the delay precision on the process, temperature and power supply deviation through the difference of the double delay chains, and further enlarges the time measurement range in combination with a thick and thin segment counting method.

The application discloses a superconducting quantum capacity detector with large saturated power, which comprises a reference ground, a coplanar waveguide transmission line, a superconducting microwave resonator based on a tantalum film and a single Cooper pair box based on aluminum, the superconducting microwave resonator comprises a double helix inductor and an interdigital capacitor, the single Cooper pair box is connected to the interdigital capacitor through aluminum metal wires, the single Cooper pair box and the double helix inductor are located on the same side of the interdigital capacitor, and the single Cooper pair box is located above the double helix inductor, so that the detector unit is more compact, the space utilization is increased, and the number of pixels of a multi-pixel focal plane detector array is increased; the gate capacitor is designed in the shape of a tuning fork, compared with an existing parallel wire structure, double capacitance values can be obtained without increasing the volume of a superconducting island, the smaller the volume of the superconducting island is, the more significant the quantum capacity effect of the detector is, and the more obvious the response is, the larger the gate capacitor is, and the larger the saturated power of the detector is, so that the saturated power can be increased without losing sensitivity.

According to the first electrode structure of the infrared focal plane detector chip and the preparation method, an N-type substrate forms a junction in a diffusion or ion implantation mode, and a mesa structure is prepared and formed through wet etching or dry etching; the electrode layer is directly prepared on the table top of the substrate material and forms ohmic contact with the table top of the substrate; the passivation layer is of a double-layer passivation film structure, and the indium column layer is prepared through photoetching development, a coating machine and a stripping process and is in direct contact with the exposed electrode layer; the infrared focal plane array photoelectric sensor is based on mature semiconductor processes such as magnetron sputtering, photoetching and wet etching, does not need to add special equipment, can directly adapt to an existing production line, reduces the cost of technology upgrading and industrial application, and lays a foundation for large-scale application of low-cost, large-size and small-pixel infrared focal plane array photoelectric sensors.

The invention belongs to the technical field of photoelectric detectors, and discloses a multi-element composite noise reduction / single photon statistics dual-mode laser focal plane detector, which comprises a macro-pixelated GM-APD array photosensitive chip used for photoelectric conversion; the noise self-adaptive suppression CMOS reading circuit is used for performing signal processing and data output; the GM-APD array photosensitive chip and the CMOS readout circuit are electrically connected in a hybrid integration mode, and parallel processing of unit signals in a macro pixel is achieved. The dynamic range of the detector is effectively expanded, so that the detector can flexibly deal with echo signals from strong to weak and detection distances from near to far, and diversified application requirements are met.

The invention discloses a high-precision celestial body measurement method based on multi-channel imaging superposition detection, and belongs to the technical field of high-precision celestial body measurement, and the method comprises the steps: enabling a front-end large-aperture telescope to image an infinite target star and a reference star on a primary image plane; the lens array and the rear-end imaging objective lens are used for amplifying and imaging a target star image and a reference star image on a primary image surface; the target star image and the reference star image which are amplified and imaged by different imaging channels are superposed on the same final image plane and are recorded by the same monolithic array detector; according to the relative position distribution of a target star image and a reference star image on the monolithic array detector, assuming that all fixed stars are imaged by an imaging channel corresponding to a central lens unit of the lens array, and calculating the angular spacing between the target star and the reference star; and the change rule of the angular spacing between the target star and the reference star is obtained through multiple observations. According to the method, splicing of multiple focal plane detectors is not needed, and the technical problems of high splicing difficulty, complex calibration process and the like are solved.

The application discloses a kind of InGaAs Geiger mode focal plane detection chip structure and manufacturing method without crosstalk, and the InGaAs Geiger mode focal plane photosensitive array chip of prepared pn junction is bonded with the supporting sheet with microlens array by gold-gold bonding, the p-type face of InGaAs Geiger mode focal plane chip is common electrode, n-type face electrode is independent and is interconnected by In column flip with readout circuit chip;Chip incident photon enters from the supporting sheet with microlens array, and the incident photon is converged into the p region of each independent photosensitive detection area of InGaAs Geiger mode focal plane by microlens, and the pulse signal generated is processed after being interconnected with n-type face readout circuit, to realize single-photon ranging, laser three-dimensional imaging.The application can realize the production of InGaAs Geiger mode focal plane photosensitive array without crosstalk and can be shared with the same kind of readout circuit of silicon-based Geiger mode focal plane detector.

The invention discloses a cascaded colloidal quantum dot light guide type focal plane detector and a preparation method thereof. The cascade type colloid quantum dot light guide type focal plane detector comprises a substrate layer, array type interdigital electrodes are arranged on the substrate layer, and a first insulating layer is arranged at the position, except for the interdigital electrodes, of the substrate; an active layer formed by cascading HgTe quantum dot layers is arranged on the interdigital electrode; a second insulating layer is arranged on the first insulating layer and the active layer, and an antireflection film layer is arranged on the second insulating layer. The structure of the cascaded colloidal quantum dot light guide type focal plane detector can effectively isolate adjacent pixels, reduce signal crosstalk and improve image contrast. According to the cascade type colloid quantum dot light guide type focal plane detector, the active layer formed by the cascade type HgTe quantum dot layer is adopted, in combination with the overall structure, the energy band gradient can be formed, separation and transmission of photon-generated carriers are promoted, the recombination loss is reduced, and the quantum efficiency is improved.

The invention belongs to the related field of detectors, and discloses a quantum dot focal plane detector and a preparation method thereof, and the quantum dot focal plane detector comprises an ROIC wafer, a pixel insulating layer, a metal layer, a hole transport layer, a quantum dot layer, a buffer layer, an electron transport layer and a common electrode layer. The pixel insulating layer is arranged on the upper surface of the ROIC wafer, array holes are formed in the pixel insulating layer and extend into the ROIC wafer, and the tungsten columns, the metal layer, the hole transport layer and the quantum dot layer which are exposed in the ROIC wafer are sequentially located in the holes from bottom to top. The quantum dot layer is of a quantum dot-quantum dot + metal nanoparticle-quantum dot three-layer structure, the buffer layer, the electron transport layer and the common electrode layer are sequentially arranged on the upper surface of the pixel insulating layer from bottom to top, and the structural design gives consideration to photoelectric performance and crosstalk resistance.

The application discloses a long-wave type-Ⅱ superlattice SF6 gas detector, which comprises a focal plane array, the focal plane array comprises a plurality of independent photosensitive pixels, the focal plane array is connected with a readout circuit to form an infrared focal plane detector assembly, the photosensitive pixel comprises a GaSb substrate, a GaSb buffer layer, an n InAsSb buffer layer, an n-type lower ohmic contact layer, an n-type InAs / GaSb intrinsic type-Ⅱ superlattice light absorption layer, an AlGaAsSb barrier layer and an n-type upper ohmic contact layer are sequentially arranged on the GaSb substrate, a part of each layer of epitaxial material is etched to the bottom n-type contact layer to form a bottom electrode window, and a part of each layer of epitaxial material is etched to the top n-type contact layer to form a top electrode window; an Au nano array is prepared on the n-type upper ohmic contact layer as a plasmonic structure; a bottom ring electrode is deposited and prepared on the bottom electrode window, and a top electrode is deposited and prepared at the top electrode window, so that the SF6 gas can be precisely and efficiently monitored in a non-contact, real-time and long-distance mode, and the leakage point of the SF6 gas can be quickly and accurately found.