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Copper-zinc-tin-sulfur-selenium thin films, their preparation methods, and semiconductor devices

PendingCN122079511Aimprove performanceImprove thickness uniformityMetal clustersDevice material
This invention provides a copper-zinc-tin-sulfur-selenium thin film, its preparation method, and a semiconductor device thereof. The preparation method includes: fully dissolving at least one metal source of copper, zinc, tin, sulfur, and selenium in a ligand solvent; then adding a main solvent, other metal sources, and a sulfur or selenium source; and thoroughly mixing to obtain a copper-zinc-tin-sulfur-selenium precursor solution based on a mixed solvent system. The ligand solvent is a small-molecule solvent with carbonyl or amine coordinating groups that provide lone pairs of electrons to metal cations. The precursor solution is then coated onto a substrate surface to prepare a precursor thin film. The precursor thin film is further subjected to post-selenization or post-sulfurization treatment to obtain the copper-zinc-tin-sulfur-selenium thin film. By introducing a small-molecule solvent with specific coordination ability to form discrete metal-ligand structural units with the metal precursor, metal clusters or oxygen bridge network structures are effectively suppressed. High homogenization of the precursor solution is achieved at the molecular scale, significantly improving the thickness and compositional uniformity of the copper-zinc-tin-sulfur-selenium precursor thin film.
Owner:INSTITUTE OF PHYSICS CHINESE ACADEMY OF SCIENCES

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