This invention provides a
copper-
zinc-
tin-
sulfur-
selenium thin film, its preparation method, and a
semiconductor device thereof. The preparation method includes: fully dissolving at least one
metal source of
copper,
zinc,
tin,
sulfur, and
selenium in a ligand
solvent; then adding a main
solvent, other
metal sources, and a
sulfur or
selenium source; and thoroughly mixing to obtain a
copper-
zinc-
tin-sulfur-selenium precursor solution based on a mixed
solvent system. The ligand solvent is a small-molecule solvent with carbonyl or amine coordinating groups that provide lone pairs of electrons to
metal cations. The precursor solution is then coated onto a
substrate surface to prepare a precursor thin film. The precursor thin film is further subjected to post-selenization or post-sulfurization treatment to obtain the copper-zinc-tin-sulfur-selenium thin film. By introducing a small-molecule solvent with specific coordination ability to form discrete metal-ligand structural units with the metal precursor,
metal clusters or
oxygen bridge network structures are effectively suppressed. High homogenization of the precursor solution is achieved at the molecular scale, significantly improving the thickness and compositional uniformity of the copper-zinc-tin-sulfur-selenium precursor thin film.