251 results about "Electron cyclotron resonance" patented technology

The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and / or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and / or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

The invention provides apparatus having a series of individual plasma excitation devices each constituted by a wire applicator of microwave energy, having one end connected to a source for producing microwave energy and having an opposite end fitted with at least one magnetic dipole for creating at least one surface having a magnetic field that is constant and of intensity corresponding to electron cyclotron resonance, the dipole being mounted at the end of the microwave applicator in such a manner as to ensure that electrons accelerated to electron cyclotron resonance oscillate between the poles so as to create a plasma diffusion zone situated on the side of the dipole that is remote from the end of the applicator, the individual excitation devices being distributed relative to one another and in proximity with the work surface so as to create together a plasma that is uniform for the work surface.

A method of and system for pretreating the lumen of a catheter or small diameter tubing. A vacuum chamber includes a microwave port and a microwave supply subsystem including a microwave generator, and a circular polarizer produces circularly polarized microwaves propagated into the vacuum chamber via the port at a frequency which produces electron cyclotron resonance. A magnetic coil about the vacuum chamber generates a magnetic field in the vacuum chamber with magnetic field lines co-linear with the propagation direction of the microwaves. A catheter manifold positions at least one catheter in the vacuum chamber and supplies a gas within the catheter lumen to generate a plasma in the lumen for pretreating the same.

An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion / plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.

In an extreme ultra violet light source apparatus that exhausts debris including fast ions and neutral particles by the effect of a magnetic field, neutral particles emitted from plasma are efficiently ionized. The extreme ultraviolet light source apparatus includes: a plasma generating unit that generates plasma, that radiates at least extreme ultra violet light, through pulse operation; collective optics that collects the extreme ultra violet light radiated from the plasma; a microwave generating unit that radiates microwave through pulse operation into a space in which a magnetic field is formed to cause electron cyclotron resonance, and thereby ionizes neutral particles emitted from the plasma; a magnetic field forming unit that forms the magnetic field and a magnetic field for trapping at least ionized particles; and a control unit that synchronously controls at least the plasma generating unit and the microwave generating unit.

The invention discloses a small neutron source adopting a windowless gas target, which belongs to the field of nuclear technology and application. In the invention, an ECR (Electron Cyclotron Resonance) ion source is used for generating a deuterium ion and directly extracted by a high-voltage extraction electrode for bombarding a windowless gas target sealed by a plasma; because the windowless deuterium gas target is sealed by adopting the plasma, the windowless deuterium gas target is allowed to bear high-flow-strength beam current; and because the energy loss of the deuterium ion when penetrating through a plasma window is less, the neutron yield is higher. Compared with a neutron pipe, the neutron source provided by the invention has high allowed beam current strength and high neutron yield. Compared with an accelerator neutron source with large size, complex system and high cost, the neutron source provided by the invention has small size, simple system and low cost. Compared with a neutron source for directly carrying out deuterium-tritium reaction on an ion source to generate neutron, the ion source has simple system, low cost and no tritium radioactive processing and circulating problem. The invention has very wide application prospect.

A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

A plasma source includes a magnetic field generating unit for generating within a plasma chamber a magnetic field B for electron cyclotron resonance, which has a direction crossing a direction in which the plasma is discharged through a plasma emission aperture. The plasma source is applied to an ion implanting apparatus.

The present invention relates to a plasma deposition apparatus and method for forming a thin film on a work piece (41). The deposition apparatus (30) includes a reaction chamber (31), a magnetic device (32,33), a microwave device, two sputtering targets (36), and a substrate holder (40). The reaction chamber includes at least one reaction gas inlet for introducing corresponding at least one reaction gas therethrough and a vacuum system. The reaction chamber has a predetermined plasma generation region. The magnetic device is configured for producing a magnetic field around the plasma generation region. The two sputtering targets are disposed at opposite sides of the plasma generation region and the sputtering targets facing each other. The substrate holder is for securing a work piece thereon. The microwave is in an enough frequency that matches the strength of the magnetic field for conducting electron cyclotron resonance (ECR) in the position and producing plasma with high density in the reaction chamber. Therefore, ions of the plasma bombard the sputtering targets and sputter the target atoms to deposit on the work piece for forming a thin film.

The invention provides a plasma strengthen thin film deposit appliance and the thin film deposit method. The appliance comprises: a confined chamber, an electromagnetic means used to generate the magnetic field with intended intensity in plasma generating area of the intended chamber, a micro-wave equipment used to generate and send micro-wave to the plasma generating area, a pair of misfiring target which are opposite positioned on the two sides of the plasma generating area inside the chamber, wherein each misfiring target is touched with a cathode, a holder used to hold the handled unit, wherein the micro-wave frequency matches the magnetic field intensity to generate the electron cyclotron resonance and high-energy ion to bombard the misfiring target so that the target atom is active and deposited on the unit's surface to form the thin film. It also discloses a method for using the plasma deposition thin film.

In an extreme ultra violet light source apparatus that exhausts debris including fast ions and neutral particles by the effect of a magnetic field, neutral particles emitted from plasma are efficiently ionized. The extreme ultra violet light source apparatus includes a plasma generating unit that generates plasma, that radiates at least extreme ultra violet light, through pulse operation; collective optics that collects the extreme ultra violet light radiated from the plasma; a microwave generating unit that radiates microwave through pulse operation into a space in which a magnetic field is formed to cause electron cyclotron resonance, and thereby ionizes neutral particles emitted from the plasma; a magnetic field forming unit that forms the magnetic field and a magnetic field for trapping at least ionized particles; and a control unit that synchronously controls at least the plasma generating unit and the microwave generating unit.

The invention discloses a facility for manufacturing vertical GaN-based LED chips by metal substrates. The facility comprises a computer information acquisition controller, a reaction room, a metal substrate feeding room, a gaseous-phase metal organism supply device, a nitrogen and / or hydrogen and / or ammonia supply device, an ECR (electron cyclotron resonance) plasma resource supply device, a vacuum degree meter and an imaging display formed relatively by a reflection high-energy electron diffractometer and a fluorescent screen, and is mainly characterized by further comprising a magnetic field coil support cylinder, a photoelectric alarm, a Faraday cylinder, an electronic probe and a direct-current bias voltage. The facility is reasonable in structure, high in film-coating quality and working efficiency, low in chip manufacture cost and the like.

The present invention discloses microwave electron cyclotron resonance plasma body chemical vapor deposition equipment, which comprises a microwave power source and a transmission system 101, a microwave resonance cavity 102, a coating chamber and a specimen stage system 103, a vacuum system 104, a gas circuit system 105, an automatic sheet transmission system 106, and a controlling system 107, wherein, magnetic field devices 306 which are lined at equal intervals are arranged in the microwave resonance cavity; the specimen stage system is arranged inside the coating chamber; the microwave resonance cavity, the vacuum system, and the automatic sheet transmission system are respectively connected with a coating chamber 809, the microwave power source and the transmission system are connected with the microwave resonance cavity; a controlling software is solidified in the host computer of the controlling system; the working states of the microwave power source and the transmission system, the coating chamber and the specimen stage system, the vacuum system, and the gas circuit system are respectively controlled through interfaces, and thus the deposition technological process of a film is completed. The present invention has the advantages that the big area uniformity is good, the deposition rate is high, the automaticity and the production efficiency are high, the reliability is good, the power loss is small, and the stability and the repeatability are good.

An apparatus of an electron cyclotron resonance ion source may include: a magnet unit containing a magnet for generating magnetic fields; an ionizing chamber housing unit for generating ions through electron cyclotron resonance from a plasma; a microwave generating unit for injecting microwaves to the ionizing chamber housing unit to generate ions; and a beam integrating and guiding unit for treating the generated ions. The magnet unit may include: a bobbin for winding the magnet; a variable spacer for dividing the bobbin into a plurality of sections; and the magnet which is wound into the form of a wire or a tape in the plurality of sections formed by the variable spacer.

A thruster has a chamber defined within a tube. The tube has a longitudinal axis which defines an axis of thrust; an injector injects ionizable gas within the tube, at one end of the chamber. A magnetic field generator with two coils generates a magnetic field parallel to the axis; the magnetic field has two maxima along the axis; an electromagnetic field generator has a first resonant cavity between the two coils generating a microwave ionizing field at the electron cyclotron resonance in the chamber, between the two maxima of the magnetic field. The electromagnetic field generator has a second resonant cavity on the other side of the second coil. The second resonant cavity generates a ponderomotive accelerating field accelerating the ionized gas. The thruster ionizes the gas by electron cyclotron resonance, and subsequently accelerates both electrons and ions by the magnetized ponderomotive force.

The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber 1, wherein multiple sets (7, 7′) of high frequency induction antennas are disposed for forming an induction electric field that rotates in the right direction on an ECR plane of the magnetic field formed within the vacuum processing chamber 1, and plasma is generated via an electron cyclotron resonance (ECR) phenomenon. A Faraday shield 9 for blocking capacitive coupling and realizing inductive coupling between the high frequency induction antenna and plasma receives power supply via a matching box 46 from an output from a Faraday shield high frequency power supply 45 subjected to control of a phase controller 44 based on the monitoring of a phase detector 47-2. Multiple filters 49 short-circuit the high frequency voltage at various portions of the Faraday shield 9 to ground, thereby preventing the generation of an uneven voltage distribution having the same frequency as the plasma generating high frequency.

The invention relates to an ECR plasma source comprising a coaxial microwave supply line (1) with an internal conductor (2) and an external conductor (3), wherein the internal conductor (2) with one end as the antenna (7) passes through a vacuum flange (5) in insulated fashion, which vacuum flange (5) closes off an opening in the wall to the plasma space (6). A multipole magnet arrangement (8) is provided coaxially with respect to the microwave supply line (1) and its magnetic fields pass through the vacuum flange (5) and form an annular-gap magnetic field (12) in the plasma space (6) coaxially with respect to the antenna (7). The antenna (7) protrudes directly into the plasma space (6) and, in comparison with the internal conductor (2), it has a radially larger antenna head (14) at which an underside (15) is provided parallel to the vacuum flange (5) in such a way that an annular gap (16) is formed between the vacuum flange (5) and the underside (15) and that the plasma space (6) is delimited coaxially with respect to the antenna (7) and radially outside the annular-gap magnetic field (12) by means of a shield (13), whose end side facing away from the vacuum flange defines the plasma outlet opening (25).

An Electron-Cyclotron Resonance (ECR) Plasma Reactor with Multiple Exciters is disclosed. The exciters relate to a mechanism that converts the radiation energy to the electron's kinetic energy. With using a suitable antenna distributes the RF energy to distinguished exciter individually, each exciter has its own magnetic coil to build high magnetic field to resonance the electron of the operation gas, ionize the gas and generate high speed electrons. All of the high-speeded electrons can be guided by magnetic flux and accumulated to the remained part of the reaction chamber. There is an auxiliary magnet to cause energized electron moving in a helix path. The helix path makes more chance of the collision between the electron and the process gas. When collision occurs, the electron's kinetic energy activates the process gas and high-density plasma or radicals generated. The auxiliary magnetic field is also used for controlling the uniformity of plasma near the wafer pedestal area. This is a distributed ECR system with multiple RF energy conversion mechanisms, the "exciters". It simplifies the total system complexity by discrete but simpler main magnets, cooling system, low power RF energy sources etc. The invention gives an easy way to build a large-sized ECR just by increasing the number of exciters.

The invention discloses a manufacture method of a stacked gate SiC-metal insulator semiconductor (MIS) capacitor and mainly solves the problem of overlarge gate leakage current, too high SiC and SiO2 interface state density and poor breakdown characteristics of a SiC power MIS device. In the manufacture process, the standard wet process cleaning is carried out on an N type SiC epitaxial wafer; a layer of SiO2 film grows by a dry-oxygen oxidation method, and bottom layer gate media are formed; the grown SiO2 film is subjected to plasma treatment in an electron cyclotron resonance plasma enhanced-metal organic chemical vapor deposition (ECR PE-MOCVD) system; an atom layer deposition (ALD) method is used for depositing Al2O3 medium films, and top layer gate media are formed; substrate metals are evaporated by electron beams to form a zero electrode; and finally, the gate metal is formed through peeling, and the device manufacture is completed. The gate medium reliability of the SiC-MIS capacitor during the high-temperature and high-power application is improved, and the manufacture method can be used for the manufacture of large-scale SiC-MIS devices and circuits.

Process and device for depositing, by electron cyclotron resonance plasma, a web of carbon nanofibres or nanotubes, on a substrate without a catalyst, by injection of a microwave power into a deposition chamber including a magnetic structure with a highly unbalanced magnetic mirror and at least one electron cyclotron resonance zone within the interior of the deposition chamber itself and opposite the substrate. Under a pressure of less than 10<-4 >mbar, ionization and / or dissociation of a gas containing carbon is induced in the magnetic mirror in the center of the deposition chamber, thus producing species that deposit on the substrate, which is heated. A resulting film, which may be on a substrate, can be formed from a web or a network of interconnected carbon nanofibres or nanotubes, like a spider's web, the film being exempt of a catalyst and a structure of several layers-a multi-layer structure-including at least two layers of a web of carbon nanofibres or nanotubes, as well as filters, electron accelerating or decelerating nanogrids and flat screens including such films or structures.

The invention discloses a method for controlling nanocrystalline graphene size in a carbon film through electron cyclotron resonance (ECR) electron irradiation density. An ECR plasma processing system is utilized, the microwave power is regulated to change in a range from 160 to 400W, and change of electron irradiation density in a range from 30 to 120mA / cm<2> can be realized. The nanocrystalline graphene size in the carbon film under different electron irradiation densities is characterized by utilizing a transmission electron microscope and a Raman spectrum, and when the electron irradiation density is gradually increased from 30mA / cm<2> to 120mA / cm<2>, the average nanocrystalline graphene size is gradually increased from 1.09nm to 2.69nm. According to the control method provided in the invention, the nanocrystalline graphene size in the carbon film is conveniently and accurately controlled.

The invention discloses a surface plasma resonance and electron cyclotron resonance double-excitation type microwave thruster, relates to the technical field of spacecraft power, and relates to the thruster which is based on low-temperature non-equilibrium plasma, namely surface plasma, resonance and electron cyclotron resonance and is applied to a microsatellite power system for performing the tasks of satellite formation, deep space exploration and the like. The surface plasma resonance and electron cyclotron resonance double-excitation type microwave thruster is fixed into a vacuum environment through a thruster supporting frame, and comprises a permanent magnet ring, a discharge chamber, a metal antenna and a tail spraying pipe; the permanent magnet ring is mounted at the external part of the discharge chamber in a sleeving manner; the metal antenna is embedded into the interior of the discharge chamber; the permanent magnet ring is embedded into the thruster supporting frame; the tail spraying pipe is butted with an outlet of the discharge chamber. The surface plasma resonance and electron cyclotron resonance double-excitation type microwave thruster has the characteristics of being novel in structure, convenient in machining, small in size, high in stability, strong in specific impulse, long in thruster service life and the like.

The invention relates to the field of microelectronic technology, a method for improving the ohmic contact characteristics of a silicon carbide semiconductor, comprising the following steps: (1) performing traditional RCA cleaning on a silicon carbide sample; (2) placing the silicon carbide sample in electron cyclotron resonance microwave plasma In the bulk system, hydrogen plasma treatment is carried out; (3) electrode pattern is formed on the silicon carbide sample by photolithography; (4) metal electrode material titanium or titanium carbide is deposited by magnetron sputtering; (5) The silicon sample was stripped of metal other than the electrodes in an ultrasonic cleaner with acetone, and dried with nitrogen; (6) the silicon carbide sample was annealed in a nitrogen atmosphere. In the present invention, after pre-treating the surface of silicon carbide with hydrogen plasma generated by an electron cyclotron resonance system, the surface of silicon carbide is effectively cleaned and passivated, and the surface state density is significantly reduced, and combined with low work function metal titanium or titanium carbide and relatively The silicon carbide substrate with high doping concentration has a low barrier height of Ti / SiC contact, and good ohmic contact can be formed under low temperature annealing conditions.

The invention provides a millimeter wave micropore coupler for measuring high power in the technology of heating nuclear fusion plasma large-power radio frequency wave. The millimeter wave micropore coupler comprises a coupler body of which the material is copper alloy or copper matrix composite and is provided with a reflecting surface, an input section and an output section which are arranged in the body, comprise base sections and are positioned at the two ends of the base section, a corrugated waveguide transmission line square bend which is integrally connected with the reflecting surface of the coupler, and a coupling hole which is used for communicating the base section of U-shaped waveguide with the inner cavity of the corrugated waveguide transmission line square bend. The millimeter wave micropore coupler is simple in structure, large in power capacity, little in insertion loss, flexible and convenient to use, and high in reliability; during measuring process, due to the power coupling method, the influence of the external environment on the measuring result can be avoided; and the millimeter wave micropore coupler has outstanding advantages on the aspect of measuring the millimeter wave band high power microwave, and can be widely applied to measuring transmission power of an ECRH (electron cyclotron resonance heating) system of which the transmission frequency is 138GHz-142GHz and the transmission power is megawatt.

The light source comprises an emitter (4) which, by means of at least one antenna (3), creates an ultra high-frequency electromagnetic wave in a sealed chamber (1) and which provides the lamp with power. The chamber (1) has a wall that is transparent to light and contains a gas at low pressure. A permanent magnet (2) creates a static magnetic field inside the chamber (1). The respective values of the static magnetic field and of the frequency of the electromagnetic wave are determined such as to cause an electron cyclotron resonance inside the chamber (1). The emitter (4), antenna (3) and magnet (2) are disposed in relation to the chamber (1) in such a way as to free a solid angle of at least 2π steradians for the light. The antenna (3) can be disposed inside the chamber (1) and can, optionally, be formed by the magnet (2). The magnet is substantially enveloped by the chamber (1).

The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of electron cyclotron resonance (ECR), as well as to use of plasma treatment technology in manufacturing of different semiconductor structures. Also proposed are semiconductor device and integrated circuit and methods for their manufacturing. Technical result consists in improvement of reproducibility parameters of semiconductor structures and devices processed, enhancement of devices parameters, elimination of possibility of defects formation in different regions, and speeding-up of the treatment process.

The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and / or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and / or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

A method for the growth of diamond on a substrate combines an ECR (Electron cyclotron resonance) MPCVD (Microwave plasma chemical vapor deposition) method with a MPCVD method in one system. A two-step diamond growing method comprises firstly etching and nucleation performed by the ECR method and then diamond grown by the microwave plasma CVD method. Not only are high quality continuous polycrystalline diamond films on silicon wafer obtained but also heteroepitaxial growth has been achieved in the present invention. Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and Raman spectroscopy have been used to characterize the structure and morphology of the synthesized diamond films.