94 results about "Electron cyclotron resonance" patented technology

The invention discloses an in-situ synthesized halogen-modified bismuth nano electro-catalysis electrode and a preparation method and application thereof.The preparation method comprises the steps that basic bismuth nitrate is prepared through a simple hydrolysis method, then halogen atoms are grafted on the surface of the basic bismuth nitrate through water bath treatment, and a precursor is synthesized; and then the halogen atom modified bismuth-based nano electro-catalysis electrode is formed through in-situ reduction under an ECR (Electron Cyclotron Resonance) condition. The preparation method is simple and convenient, the reaction is relatively mild, the energy consumption is low, and the prepared halogen-modified bismuth nano catalytic material can effectively inhibit the competitive reaction of hydrogen evolution and improve the current density, so that the halogen-modified bismuth nano catalytic material shows relatively good performance of electrocatalytically reducing carbon dioxide into formic acid.

The invention belongs to the technical field of microwave plasmas, and particularly relates to a magnetized atmospheric pressure pulse microwave plasma jet discharger. The discharger is reasonable in design, microwave energy is fed into the discharge chamber through the SMA interface, high electric field intensity is formed at the tip of the hollow needle electrode, and fed working gas is disrupted and discharged; a magnet exciting coil outside the quartz tube generates an axial magnetic field inside the quartz tube through direct current, electrons do spiral cycloid motion in an electromagnetic field, and electron cyclotron resonance can be achieved under the field. Through magnetic field constraint, high-energy electrons are constrained in a core area, a motion path is prolonged, effective collision times are increased, gas dissociation efficiency and ionization degree are improved, and collision loss of the electrons and a wall surface is reduced; the plasma jet performance is improved; the device works in an atmospheric pressure environment, does not need a vacuum system, reduces equipment cost and maintenance difficulty, reduces electrode sputtering and cavity corrosion, and prolongs the service life of core components.

The invention provides a multi-tube ECRH system thermal load management method based on low-power basic operation, and belongs to the field of electron cyclotron resonance heating systems. When the target total power and the operation duration are received, a time period is judged, one gyrotron is dispatched in turn as a rest gyrotron, and the other gyrotrons are dispatched as working gyrotrons; the method comprises the following steps: periodically collecting the operation power and the collector temperature of each gyrotron, calculating the accumulated thermal load of each gyrotron, calculating the thermal load relative deviation of each gyrotron based on the average thermal load of all gyrotrons at the end of each time window, marking the gyrotron with the thermal load relative deviation exceeding a threshold value as a gyrotron to be adjusted, and adjusting the gyrotron to be adjusted according to the thermal load relative deviation. According to the thermal load relative deviation of the gyrotron to be adjusted, the adjustment amount is calculated, the operation power of the gyrotron to be adjusted is adjusted, and the operation power of all the working tubes is dynamically adjusted; the invention further provides a thermal load management system. And the contradiction between quick response and heat management and between power stability and heat balance is broken through.

The invention relates to the technical field of fusion devices, and discloses a mounting assembly for mounting an electron cyclotron resonance heating reflector, the mounting assembly comprises a first mounting plate, a second mounting plate and a mounting base, the second mounting plate and the first mounting plate are oppositely arranged at an interval, and the mounting base is connected between the first mounting plate and the second mounting plate. A reflector and an adjusting assembly are installed on the installation base, and the adjusting assembly can control the reflector to rotate relative to the installation base and / or control the reflector to move in the vertical direction. According to the mounting assembly used for mounting the electron cyclotron resonance heating reflector, the reflector can be subjected to angle adjustment and position adjustment by controlling the reflector to rotate and / or controlling the reflector to move in the vertical direction, so that the reflector can perform reflection, focusing and direction adjustment on microwaves, accurate waveguide transmission is achieved, and the service life of the reflector is prolonged. The installation performance of the installation assembly is improved, and meanwhile the machining precision and the machining cost of the installation assembly can be reduced to a certain degree.

The invention discloses a cooperative control method for improving Tokamak radio frequency wave current driving locality, and the method mainly comprises the following steps: S1, according to a radial position where locality needs to be enhanced, heating narrow resonance layer electrons at the corresponding radial position through electron cyclotron resonance heating (ECRH); s2, ion cyclotron resonance heating (ICRH) is adjusted for regional heating, so that the radial position of an ICRH driving current main peak value coincides with the radial position of an ECRH current peak value; s3, using GENRAY and CQL3D programs to simulate low hybrid wave (LHW) and high harmonic fast wave (HHFW) combined current driving, calculating a momentum region corresponding to a synergistic effect in a momentum space, performing correlation analysis on the synergistic momentum region, wave emission parameters and current radial distribution, feeding back the parameter adjustment direction, and performing repeated iteration until required local current distribution is achieved; according to the invention, current driving with consideration of driving efficiency and locality control is realized, and the method is of great significance in enhancing the current distribution control capability, improving the constraint performance of plasma and obtaining longer constraint time and higher fusion power.

The invention relates to a proton helium ion treatment device based on a synchrotron, an ion source system respectively generates # imgabs0 # and helium ions through two electron cyclotron resonance ion sources, an injector comprises a four-wing RFQ and an IH-DTL, # imgabs1 # or helium ions are preliminarily accelerated to 8MeV / u through the four-wing RFQ and the IH-DTL, # imgabs2 # is stripped into protons through a stripper, and # imgabs3 # or helium ions are stripped into protons through the four-wing RFQ and the IH-DTL. Protons or helium ions are injected into the synchrotron through the injection system, the synchrotron accelerates the protons or helium ions to 235 MeV / u and then the protons or helium ions are led out of the synchrotron through the leading-out system, and the led-out protons or helium ions enter a treatment room for treatment after the transverse size of the protons or helium ions is made to be smaller than 10 mm through the beam transmission system. According to the proton helium ion treatment device, miniaturization of the treatment device is achieved, popularization of helium ion treatment is finally achieved, and the proton helium ion treatment device is welfare for livelihood.

A lithographic apparatus (100) includes: a housing (400) defining an environment (401), where the environment surrounds a surface (402), where the housing is configured to contain a plasma; a microwave generator (410) configured to provide microwave radiation (411) into the housing; and a magnetic source (420) configured to generate a magnetic field adjacent to the surface, the magnetic field generating a plasma (432) by electron cyclotron resonance together with the microwave radiation, thereby increasing the concentration of the plasma adjacent to the surface.

The invention relates to a plasma source (100) for the surface treatment of one or more substrates (116), comprising: a vacuum chamber (108); a voltage source (128); a material feed source (130); a magnet arrangement (122a, 122b) having magnets (112, 112a), wherein the magnets (112, 112a), preferably permanent magnets (112a), are oriented relative to one another such that an electron cyclotron resonance condition is satisfied; an apparatus (126) for generating and transmitting electromagnetic waves (120), the apparatus (126) comprising a generator (104) for generating electromagnetic waves (120), an antenna (102) and a conductor (106); and at least one or more substrate-holding devices for holding the one or more substrates (116), such as a substrate tree, wherein a substrate bias voltage can be applied to the one or more substrates (116) by means of the voltage source (128), which can be switched on and off.

The present invention relates to a modular method and device for an all-permanent-magnet electron cyclotron resonance ion source, which includes: an ion source magnet composed of a first axial magnet, a second axial magnet, and a radial magnet, with the overall inner radius of the ion source being R0; the first axial magnet and the second axial magnet have opposite magnetization directions, and the first axial magnet and the second axial magnet are composed of magnetic rings with different radii, different axial thicknesses, and capable of providing an axial magnetic field; the first axial magnet and the second axial magnet are divided into multiple groups according to the axial thickness; the first axial magnet and the second axial magnet are divided into multiple groups according to the radial thickness; the radial magnet adopts a HALBACH structure with three numbers of circumferential magnetic blocks and is divided into multiple groups according to the axial thickness; the radial magnet, the first axial magnet, and the second axial magnet are all divided into n times 12 magnetic blocks along the angular direction; according to the performance requirements of the ion source, the first axial magnet, the second axial magnet, and the radial magnet with three numbers of circumferential magnetic blocks are arranged and combined according to n times the axial thickness d and the radial thickness r to form a complete ion source magnet.

The application discloses an electron cyclotron resonance ion source, which comprises a plurality of microwave transmission modules, a plurality of microwave resonance cavities, a plasma generation chamber and a magnetic field module, the microwave transmission module comprises a microwave source, an impedance matcher and a waveguide, the microwave source is used for generating and emitting microwaves, the microwave sources generate microwaves with the same or different frequencies, the inlet of the waveguide is connected with the microwave source, and the outlet is connected with the microwave resonance cavity, each waveguide is connected with one microwave resonance cavity, the impedance matcher is used for adjusting the frequency and standing wave of the microwaves and realizing impedance matching of microwave feeding, the inlet of the plasma generation chamber is connected with the outlets of the plurality of microwave resonance cavities, free electrons are formed at the boundary of the plasma generation chamber and the plurality of microwave resonance cavities, and the magnetic field module is used for generating a magnetic field, so that the free electrons make spiral motion in the plasma generation chamber and collide with background gas introduced into the plasma generation chamber to generate plasma. The electron cyclotron resonance ion source can realize multi-frequency microwave feeding and improve the uniformity of plasma.

The present invention relates to the technical field of ion source microwave windows, and specifically to an ion source microwave window with a composite functional film and surface texture and a preparation method thereof. The ion source microwave window comprises a microwave window substrate layer, a composite functional film layer and a surface texture layer; the ion source microwave window is particularly suitable for electron cyclotron resonance (ECR) ion sources and related applications, and can effectively suppress surface sparking, reduce ablation, improve microwave coupling efficiency, extend the service life of the microwave window, and has excellent thermal conductivity and breakdown resistance, especially under high-power microwave excitation and high-density plasma environments.

The present invention relates to the field of cavity surface coating technology of semiconductor laser chips, and in particular to a cavity surface coating structure and method of InP-based semiconductor laser chips, comprising S001, cleaving the semiconductor laser chip into strips, and then fixing the strips with a special clamp and transferring them to an electron cyclotron resonance coating device for vacuuming; S002, starting an automatic cleaning coating program, and when the vacuum is drawn to a required value, an electron cyclotron resonance ion source automatically performs a plasma pre-cleaning treatment on the cavity surface of the chip; S003, after coating the first protective film Si layer, transferring the laser chip clamp to an electron beam evaporation coating device platform for continued vacuuming; the semiconductor laser chip cavity surface coating method provided by the present invention utilizes electron cyclotron technology to clean the semiconductor laser, and utilizes electron beam evaporation coating equipment to evaporate a high anti-reflection film and a high reflectivity film, and no high-temperature heating is required during the entire coating process, which can effectively avoid the problems of laser chip electrode degradation and efficiency reduction caused by high temperature.

The invention relates to an accelerator mass spectrometer system based on positive and negative double ion sources, and the system comprises a double ion source subsystem which comprises a solid sample introduction negative ion source, a gas sample introduction positive ion source, a reversible electrostatic analyzer, and a high-voltage rack. The gas sample injection positive ion source is an electron cyclotron resonance ionization source and can generate 1 +, 2 +, 3 + and full-stripping-state positive ion beams; according to the invention, the dual-ion source subsystem is arranged, the solid sample introduction negative ion source and the gas sample introduction positive ion source are respectively adopted, the measurement requirements of positive ions and negative ions in the same accelerator mass spectrometer system are met, the gas sample introduction positive ion source adopts an electron cyclotron resonance ionization source, positive ion beams in various charge states can be generated, and the measurement accuracy is improved. Covering nuclides from hydrogen to over uranium; the solid sample injection negative ion source adopts a sputtering negative ion source, meets the generation of various negative ion beams, is suitable for measuring long-life isotopes, and realizes quick switching of the two ion sources by arranging a reversible electrostatic analyzer.

This invention relates to the field of fusion device technology and discloses a mounting assembly for installing an electron cyclotron resonant heating reflector. The mounting assembly includes a first mounting plate, a second mounting plate, and a mounting base. The second mounting plate is spaced apart from the first mounting plate, and the mounting base connects between the first and second mounting plates. A reflector and an adjustment assembly are mounted on the mounting base. The adjustment assembly can control the rotation of the reflector relative to the mounting base and / or control the vertical movement of the reflector. The mounting assembly for installing an electron cyclotron resonant heating reflector according to this invention allows for angle and position adjustment of the reflector by controlling its rotation and / or vertical movement. This enables the reflector to reflect, focus, and adjust the direction of microwaves, achieving precise waveguide transmission, improving the installation performance of the mounting assembly, and also reducing the processing precision and cost of the mounting assembly to a certain extent.

The invention discloses a real-time control method of electron cyclotron resonance heating power based on model predictive control, and relates to the technical field of electron cyclotron resonance heating control. The method comprises the following steps: a segmented modeling step: dividing the working range of the electron cyclotron resonance heating system into a plurality of power intervals according to output power, and establishing a linear system dynamic model for describing the dynamic characteristics of the system in each interval; and a real-time control cycle step: acquiring real-time output power and a state estimation value in each control period, and determining a currently used target model according to the real-time output power in combination with a hysteresis switching strategy, and based on the target model and a preset power reference trajectory, constructing a quadratic programming problem containing a target function for minimizing a power tracking error and a constraint condition, and solving to obtain an optimal control input and acting on the system. The invention aims to solve the problem that the existing control method is difficult to consider both the regulation speed and the multivariable constraint, realize the rapid and accurate control of the electron cyclotron resonance heating power, and improve the safety and stability of the operation of the system.

The present invention relates to a satellite propulsion device (10) employing electron cyclotron resonance and magnetic nozzles, the propulsion device extending at least partially along a longitudinal axis (X) and comprising an outer conductor (22) extending longitudinally along said axis and an ionization chamber (8), the outer conductor laterally bounding the ionization chamber and the ionization chamber including a circular lateral opening (24) having a diameter D, and further comprising a screen (6) arranged coaxially with the longitudinal axis (X), the screen (6) having a ratio of its maximum lateral dimension D' to D between 3 and 15 and including a portion made of insulating material (61) and / or a portion made of conductive material (62).

The utility model discloses a movable lifting adjusting mechanism for installing and debugging ECR (electron cyclotron resonance) ion source equipment, which comprises a leveling lifting mechanism connected with an equipment support and arranged on a pulley bottom plate. A supporting and adjusting type universal foot cup assembly and a large-wheel-diameter moving wheel assembly are arranged below the pulley bottom plate. According to the movable lifting adjusting mechanism for installing and debugging the ECR ion source equipment, equipment adjusting and positioning can be met, the positioning and butt joint precision can be guaranteed, landing stable supporting can be achieved, and the problems that in the process that existing ECR ion source equipment is precisely connected with a low-energy beam section (LEBT), an RFQ accelerator section and a high-energy beam section (HEBT section), the operation difficulty is large, and the working efficiency is high are effectively solved. And the butt joint precision requirement cannot be met.

The present invention discloses a resonant cavity type ECR plasma source device and method. The technical solution of the present invention sets an antenna sealing cover in the vacuum resonant cavity, and places the antenna radiating microwaves in the antenna sealing cover, which can avoid the discharge antenna from polluting the ECR plasma in the vacuum resonant cavity. The magnetic field required for electron cyclotron resonance can be adjusted by the ECR control element to further increase the electron density. The device described in the technical solution of the present invention has the advantages of simple structure and high electromagnetic wave-plasma energy coupling efficiency, and can generate electron density up to 10 12 cm ‑3 Magnitude of plasma.

Method for producing a hydrophilic cover layer (1) of a sensor membrane (2) which has a contact angle q of < 90° with water, comprising - providing a sensor membrane (2) comprising a medium-facing silicone film (3), - Coating the silicone film (3) with diamond-like carbon (DLC), wherein the coating step is selected from physical vapor deposition (PVD), chemical vapor deposition (CVD), for example by ECR (electron cyclotron resonance)-CVD, laser evaporation and sputtering, preferably magnetron sputtering, whereby a cover layer (1) is formed which, during operation, comes into contact with the medium and comprises the diamond-like carbon coating (5) and the silicone film (3), - Treating the cover layer (1) with a sterilizing agent.

The present invention relates to a satellite thruster (10) employing electron cyclotron resonance and a magnetic nozzle, the satellite thruster (10) extending at least partially along a longitudinal axis (X), the satellite thruster (10) comprising an outer conductor (22) and an ionization chamber (8) extending longitudinally along the axis, the outer conductor delimiting the ionization chamber in the transverse direction, the outer conductor (22) being arranged in the outer conductor (22), and the ionization chamber (8) being arranged in the outer conductor (22). The ionization chamber comprises a circular transverse aperture (24) having a diameter D, characterized in that the satellite thruster (10) further comprises shielding means (6) coaxial to the longitudinal axis (X), the shielding means (6) having a maximum transverse dimension D 'such that the ratio of D' divided by D is between 3 and 15, said shielding means (6) comprising a portion made of a dielectric material (61) and / or a portion made of an electrically conductive material (62).

An Electron Cyclotron Resonance, ECR, magnetic nozzle thruster comprising: a thruster chamber; an antenna disposed at least partially within the thruster chamber and configured to emit radio frequency radiation into the thruster chamber; a magnetic field source configured to generate a magnetic field within the thruster chamber, the magnetic field comprising a resonance region; and a ferromagnetic structure, wherein the ferromagnetic structure is positioned relative to the magnetic field source so as to increase a volume of the resonance region within the thruster chamber.

This invention produces a high-quality N-polar gallium nitride layer at a low temperature. Provided is a method for manufacturing a semiconductor device, including a step for forming an N-polar gallium nitride layer. The N-polar gallium nitride layer is formed by a deposition apparatus using plasma generated using an electron cyclotron resonance phenomenon.

The invention relates to the technical field of ion source microwave windows, in particular to an ion source microwave window with a composite functional film and a surface texture and a preparation method thereof, and the ion source microwave window is composed of a microwave window matrix layer, a composite functional film layer and a surface texture layer; the composite material is especially suitable for an electron cyclotron resonance (ECR) ion source and related applications thereof, can effectively inhibit the surface sparking phenomenon, reduce ablation, improve the microwave coupling efficiency and prolong the service life of a microwave window especially in high-power microwave excitation and high-density plasma environments, and has excellent heat-conducting property and breakdown resistance.

The embodiment of the utility model provides a microwave plasma gun and an ion implanter, and the microwave plasma gun comprises a plasma chamber; the plasma chamber is used for accommodating microwaves and gas, and an electron cyclotron resonance area is formed in the plasma chamber; at least one electron escape hole is formed in the side wall of the plasma chamber; in the axial direction of the electron escape holes, the positions of the electron escape holes coaxially correspond to the positions of the electron cyclotron resonance areas, and in the direction perpendicular to the axial direction, the total sectional area of the electron escape holes is smaller than the sectional area of the electron cyclotron resonance areas. According to the technical scheme provided by the embodiment of the utility model, the leakage degree of gas in the plasma chamber can be reduced, and the working performance of the microwave plasma gun is improved.

The invention relates to a method for hardening an anti-reflective treatment layer (20) deposited on a transparent substrate comprising a top surface (22a) and a bottom surface (22b) extending away from the top surface (22a), the anti-reflection treatment (20) comprises the step of depositing at least one anti-reflection layer composed of at least one material on at least one of the top surface (22a) and the bottom surface (22b) of the transparent substrate, the hardening method comprises the step of bombarding the at least one top surface (22a) or bottom surface (22b) on which the at least one anti-reflection layer has been deposited with a single-charge and / or multi-charge ion beam (14) generated by a single-charge and / or multi-charge electron cyclotron resonance (ECR) ion source (1). The invention also relates to a transparent substrate that has undergone an anti-reflection treatment, at least one of the top surface (22a) and the bottom surface (22b) of the transparent substrate being coated with at least one anti-reflection layer consisting of at least one material in which ions are implanted.

The invention provides a device and method for improving the density of an ion beam output by an ECR ion source, and the device comprises an ionization chamber which is used for generating plasma; the microwave system is used for providing microwave energy for the ionization chamber; the electromagnet system comprises a plurality of electromagnet modules arranged along the axis direction of the ionization chamber; the excitation power supply is used for providing excitation current for each electromagnet module; the ion extraction system is used for extracting an ion beam from the ionization chamber; the electromagnet control executing mechanism is used for driving the electromagnet modules to move in the axial direction so as to adjust the distance between the adjacent modules; and the upper control system is in communication connection with the excitation power supply and the electromagnet control execution mechanism. According to the invention, accurate and flexible regulation and control of axial magnetic field distribution in the ionization chamber are realized through the adjustable spacing of the plurality of electromagnet modules.

The invention discloses a low-energy electron irradiation photoetching method. The method comprises the following steps: providing a substrate of which the surface is covered with a polymer film; the substrate with the surface covered with the polymer film is placed in a vacuum chamber of an electron cyclotron resonance plasma nanometer surface processing system, the surface of the polymer film is covered with a mask plate with a preset pattern, a diaphragm structure is arranged in front of the mask plate, and electron irradiation treatment is carried out; carrying out developing treatment on the substrate subjected to electron irradiation treatment in a developing solution, and obtaining a required pattern on the substrate; wherein remote plasma is adopted in the electron irradiation treatment, the diameter range of a center hole of the diaphragm structure is 0-35 mm, and the irradiation current of the electron irradiation treatment is 0.5-5 mA. According to the method, the irradiation area and the irradiation dose of the low-energy electrons can be accurately regulated and controlled, the action area is larger than that of the high-energy electrons, the processing efficiency is high, and the problem that the production efficiency is low in an existing photoetching method can be solved.

The invention discloses an annular waveguide electron cyclotron resonance plasma chemical vapor deposition device, and belongs to the field of microwave plasma method chemical vapor deposition. The device comprises a microwave power supply, a rectangular waveguide, a three-pin tuner, a short-circuit piston, an annular waveguide, an annular quartz window, a tungsten bias electrode, a cylindrical microwave resonant cavity, a temperature measurement observation window, an air inlet, an air outlet, a liftable substrate table tuning structure and a magnetic field system. The annular waveguide is combined with the cylindrical microwave resonant cavity, so that the axial symmetrical distribution of microwave energy can be realized, and the uniformity of the plasma is improved. The magnetic field system adopts double-layer magnetic field regulation and control, and the integral magnetic field and the plasma uniformity are optimized by independently adjusting the magnetic induction intensity. The pulsed bias power supply provides bias voltage for the substrate, and uniformity of the diamond in nucleation and growth on the heterogeneous substrate is promoted. The device is mainly used for preparing large-size heteroepitaxial single crystal diamond and polycrystalline diamond films, and high-quality uniform deposition of large-area diamond single crystal or polycrystalline films can be realized.

The present application relates to an electrostatic elimination device and an electrostatic elimination method. The electrostatic elimination device comprises: a vacuum chamber in which a charged body can be arranged; a high vacuum processing unit arranged inside the vacuum chamber to perform high vacuum processing on the charged body; and an electrostatic elimination processing unit comprising a plasma generating device for supplying plasma generated by electron cyclotron resonance to the inside of the vacuum chamber, and performing electrostatic elimination on the charged body by the plasma. The plasma generating device comprises a plasma source, which is arranged inside the vacuum chamber and generates the plasma for performing electrostatic elimination on the charged body.

This invention discloses a real-time control method for electron cyclotron resonance heating power based on model predictive control, belonging to the field of electron cyclotron resonance heating control technology. The method includes a piecewise modeling step, dividing the operating range of the electron cyclotron resonance heating system into multiple power intervals according to the output power, and establishing a linear system dynamic model describing the dynamic characteristics of the system within each interval; and a real-time control loop step, acquiring the real-time output power and state estimate in each control cycle, determining the target model to be used based on the real-time output power and a hysteresis switching strategy, constructing a quadratic programming problem based on the target model and a preset power reference trajectory, including an objective function and constraints that minimize the power tracking error, solving for the optimal control input and applying it to the system. This invention aims to solve the problem that existing control methods struggle to simultaneously consider adjustment speed and multivariable constraints, achieving rapid and accurate control of electron cyclotron resonance heating power, and improving the safety and stability of system operation.