Method and apparatus for the fabrication of ferroelectric films

Abstract

The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and / or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and / or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Description

BACKGROUND OF THE INVENTION[0001] 1. Field of the Invention[0002] The present invention is generally related to semiconductor processing. In particular, the present invention relates to processing ferroelectric films.[0003] 2. Description of the Related Art[0004] A ferroelectric material is a material that exhibits an ability to maintain an electric polarization in the absence of an applied electric field. Ferroelectric materials also exhibit piezoelectricity, where the material changes polarization in response to a mechanical pressure or strain, and pyroelectricity, where the material changes polarization in response to a temperature change.[0005] The foregoing properties of ferroelectric materials have led to many practical applications. One application uses the ability of the ferroelectric material to retain a polarization state to store data in a non-volatile memory device.[0006] A film of zinc oxide (ZnO) doped with lithium (Li) and / or magnesium (Mg) is known to form a weak fer...

AI Technical Summary

Benefits of technology

[0013] The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and / or magnesium (Mg) is deposited on a substrate in an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. An embodiment according to the invention advantageously permits the fabrication of relatively large (about 300 millimeters in diameter) substrates, which allows more devices to be fabricated at the same time, i.e., enhances economies of scale.

[0015] Electrically biased control grids provide a control of a rate of deposition of the plasma on the substrate. The control grids also provide Li and / or Mg dopants for the ZnO to create the ferroelectric film. The properties of the ferroelectric film can be conveniently tailored by selecting the composition, height, spacing and / or applied voltage of the control grid, which acts as a source of dopant, e.g., Li and / or Mg, for the ZnO film.

Problems solved by technology

Conventional methods of doping host ZnO with Li and / or Mg to form ferroelectric films have proven inadequate.

Conventional methods are not well suited to the doping of host ZnO with Li and / or Mg for relatively large scale operations with wafers of approximately 300 millimeters (about 12 inches) or larger.

Disadvantageously, the film composition cannot be fine-tuned because the doping levels of Li and / or Mg are dictated by the initial composition of the target.

Another disadvantage of magnetron sputtering is that relatively large targets, such as 300-millimeter targets, are relatively difficult to produce using powder metallurgy.

A further disadvantage of magnetron sputtering with powder metallurgy is that the purity of ZnO in a powdered metal target process is relatively lower than the purity of ZnO that is attainable from a zone-refined process.

The chamber performing the JVD process can quickly grow to relatively large and expensive proportions as the chamber holding the substrate should be at least twice the diameter of the substrate wafer to accommodate the complex mechanical motion.

Further, a JVD process does not permit the tailoring of the Li and / or Mg doping of the ZnO to conform the ZnO film to a desired ferroelectric characteristic.

As with the above-noted processes, the LP-CVD process also does not permit the tailoring of the Li and / or Mg doping of the ZnO to conform the ZnO film to a desired ferroelectric characteristic is not easy.

Thus, conventional methods are not well adapted to produce ferroelectric films on large wafers.

Conventional methods are also not well adapted to permit the uniform tailoring of the deposited ZnO composition to permit the tailoring of the ZnO film to a desired ferroelectric characteristic.

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