24 results about "Pulse operation" patented technology

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP),- with an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) with a first transistor (T1) and a second transistor (T2) and a second half-bridge (HB2: T2, T3) with a third transistor (T3) and a fourth transistor (T4),- wherein the H-bridge (H) is controlled by a control unit (ST) and- wherein the H-bridge (H) can be operated by the control unit (ST) in pulsed mode (GPB) and in quasi-continuous mode (QDB) and- wherein the first half-bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1) and- wherein the second half-bridge (HB2: T3,T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2) and- wherein the light-emitting diode (LED1) is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and- wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and- wherein the first positive supply voltage (VCC1) and the second positive supply voltage (VCC2) can be equal and- wherein the first negative supply voltage (GND1) and the second negative supply voltage (GND2) can be equal and- wherein the light source, in particular the one or more light-emitting diodes (LED1), represents the load of the H-bridge (H) between the output of the first half-bridge (HB1: T1, T2) and the output of the second half-bridge (HB2: T3, T4) and- wherein the control device (ST) is designed to operate in pulsed mode (GPB) a “PAn” condition,in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a turn-on time (τpp), and- wherein the control device (ST) is designed so that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a clearing time (τpn), and- wherein the clearing time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1).

A radar sensor has an analog front-end with an in-phase, I, channel output and a quadrature-phase, Q, channel output. The radar sensor operates in a pulsed operation. A mode switch is used to couple a selected one of the I and Q-channel outputs to an analog processing circuit. The mode switch is operable in a first, I-channel, mode, a second, Q- channel, mode, and a third, time division multiplexing dual-channel, mode. In this way, the radar can operate in power efficient single-channel mode or a dual-channel mode for greater robustness to interference.

To provide various methods, controllers, and electric machine systems that facilitate pulsed operation of an electric machine to improve energy efficiency of the electric machine.SOLUTION: Selected transitions between the pulsed power levels are controlled to provide a third order or higher order transition torque profile. In various implementations, third order, fifth order, or higher order transition profiles are used. The use of such a transition torque profile may improve the NVH characteristics of the electric machine while providing energy efficient pulse transitions.SELECTED DRAWING: Figure 3

A laser apparatus for generating a sub- 190 nanometer laser beam includes a deep-ultraviolet solid-state laser source to generate an initial deep-ultraviolet laser beam, at least one mid-infrared solid-state laser source to generate at least one respective mid-infrared laser beam, and at least one lithium triborate crystal to generate an output deep-ultraviolet laser beam from the initial deep-ultraviolet and mid-infrared laser beams via sum-frequency generation. Each mid-infrared solid- state laser source includes (a) a holmium-, thulium-, or chromium-doped gain crystal or gain fiber or (b) an optically-pumped semiconductor gain material to generate the respective mid-infrared laser beam. The laser apparatus may be configured for continuous-wave and pulsed operation, thus offering versatile solutions for applications requiring DUV laser radiation below 190 nanometers. Advantageously, the present approach relies on lithium triborate. Lithium triborate crystals can be grown with the quality and dimensions needed for industrial applications.

The present invention provides technology that achieves more accurate measurement while preventing luminance saturation.　The present technology provides a measurement device, etc., comprising a light source capable of switching between pulse operation and CW operation, and a control unit that controls the switching between pulse operation and CW operation, wherein the light source includes a saturable absorber that exhibits a quantum-confined Stark effect (QCSE). The control unit may control a voltage applied to the saturable absorber to switch between pulse operation and CW operation.

Headlight (SW), in particular for use in vehicles,- with at least one first LED (LED1) as a light source and- with an H-bridge (H) for controlling and supplying the first LED (LED1) with electrical energy,- wherein the headlight (SW) has a first operating mode (QDB) in which the first LED is used as a light source for illumination purposes and- wherein the headlight (SW) has a second operating mode (GPB) in which the first LED is used as a light source for generating light pulses (LP) in a function as a component of an optical data communication device and- wherein the H-bridge (H) is controlled by a control device (ST) and- wherein the H-bridge (H) can be operated by the control device (ST) in pulsed operation (GPB) in the second operating mode and in quasi-continuous operation (QDB) in the first operating mode and- wherein the control device (ST) is designed tothat in pulsed operation (GPB) a "PAn" state, in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-on time (τpp) by the H-bridge (H), and- wherein the control device (ST) is designed such that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-off time (τpn) by the H-bridge (H), and- wherein the turn-off time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1) is.,

A method for controlling the operation of at least one first electric machine on board a vehicle, wherein the vehicle has at least one resonant frequency, is provided. Pulsed operation of the first electric machine is conducted such that it provides a desired average output, the pulsed operation causing the first electric machine to oscillate between a first output level greater than the desired output level and a second output level less than the desired output level. At least some transitions between the first and second output levels are controlled. At least one notch filter for the at least one resonant frequency of the vehicle is provided.

Headlights (SW), in particular for use in vehicles, - with at least one first LED (LED1) as a light source, - wherein the headlight (SW) has a first operating mode (QDB) in which the first LED (LED1) is used as a light source for illumination purposes, and - wherein the headlight (SW) has a second operating mode (GPB) in which the first LED (LED1) is used as a light source for generating light pulses (LP) in a function as a component of an optical measuring device, - with an H-bridge (H) for controlling and supplying the first LED (LED1) with electrical energy, - wherein the H-bridge (H) is controlled by a control device (ST), and - wherein the H-bridge (H) can be operated by the control device (ST) in pulsed operation (GPB) in the second operating mode and in quasi-continuous operation (QDB) in the first operating mode, and - wherein the control device (ST) is designed tothat in pulsed operation (GPB) a "PAn" state, in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-on time (τpp) by the H-bridge (H), and- wherein the control device (ST) is designed such that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-off time (τpn) by the H-bridge (H), and- wherein the turn-off time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1) is.,

This application discloses a method, apparatus, electronic device, and storage medium for evaluating the performance of quantum operation gates. The method includes: inserting a delay of a target duration between adjacent Clifford gates in a quantum benchmark test sequence to obtain a first benchmark test sequence; determining a first incoherent error based on the quantum benchmark test sequence and the first benchmark test sequence; the target duration is n times the duration of a pulse operation gate rotating 90° around a target axis; inserting n pulse operation gates rotating 90° around a target axis between adjacent Clifford gates in a purity random benchmark test sequence to obtain a second benchmark test sequence; determining a second incoherent error based on the purity random benchmark test sequence and the second benchmark test sequence; using the difference between the second incoherent error and the first incoherent error as the target incoherent error; and evaluating the performance of the quantum operation gate based on the target incoherent error, thereby realizing the performance evaluation of microwave generating devices and microwave transmission links.

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP), - with an H-bridge (H), • consisting of a first half-bridge (HB1) with a first transistor (T1) and a second transistor (T2) and • consists of a second half-bridge (HB2) with a third transistor (T3) and a fourth transistor (T4), and - with a control unit (ST) of the H-bridge and - wherein the control unit (ST) is designed to operate the H-bridge in pulsed and continuous operation and - wherein the light-emitting diode (LED1) has an anode (A) and a cathode (K) and - where the light-emitting diode (LED1) is inserted into the H-bridge (H) as a bridge load, • wherein the light-emitting diode is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and • wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and - where the H-bridge (H) is made of • a first positive supply voltage (VCC1) and • a second positive supply voltage (VCC2) and • a first negative supply voltage (GND1) and • a second negative supply voltage (GND2) is supplied with electrical energy for transmission to the light-emitting diode (LED1) and • where the first transistor (T1) is connected to the first positive supply voltage (VCC1) and • where the third transistor (T3) is connected to the second positive supply voltage (VCC2) and • where the second transistor (T2) is connected to the first negative supply voltage (GND1) and • where the fourth transistor (T4) is connected to the second negative supply voltage (GND2) and • wherein the voltage that can be applied to the light-emitting diode (LED1) by the H-bridge in pulsed operation is higher in magnitude than the voltage that can be applied to the light-emitting diode (LED1) by the H-bridge in continuous operation in the same direction in the forward direction of the first LED (LED1) and / or in the reverse direction of the first LED (LED1) and • wherein the control device (ST) is designed to ensure that in pulse operation a “PAn” state, in which a forward voltage is applied to the first LED (LED1) in the forward direction, does not last longer than a switch-on time (τ) pp ) is taken, and • wherein the control device (ST) is designed so that in pulse operation a “PAuse” state, in which a blocking voltage is applied to the first LED (LED1) against the direction of flow, does not last longer than a clearing time (τ pn ) is taken, and • where the clearing time (τ pn ) smaller than the charge carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1) and • where the on-time (τ pp ) smaller than the charge carrier lifetime (τ) in the PN junction of the first light-emitting diode (LED1) and - wherein another transistor (T12) is connected to a third positive supply voltage (VCC3) at one terminal and to another terminal, the output of the second half-bridge (HB2: T3, T4) of the H-bridge (H) and - where the control connections (G1, G2, G3, G4, G12) are not connected to each other.

A laser device (1) is described, comprising a semiconductor laser (2) and a driving circuit (3) configured to operate the semiconductor laser (2) in pulsed operation, wherein: - the driving circuit (3) includes a switch (T1) switchable between an open state and a closed state; - the driving circuit (3) includes a first capacitor (C1) coupled to a power supply (5); - the switch (T1) is coupled to the first capacitor (C1); - the driving circuit (3) includes a second capacitor (C2); - the p-type contact (22) of the semiconductor laser (2) is capacitively coupled to the switch (T1) via the second capacitor (C2); - in the closed state of the switch (T1), the first capacitor (C1) discharges via the second capacitor (C2) and the semiconductor laser (2) to generate laser pulses; and - in the open state of the switch (T1), the second capacitor (C2) discharges. Furthermore, a method for operating the semiconductor laser (2) is described.

A generator suitable for the pulsed operation comprises a power factor correction circuit having an integrated circuit. The voltage detector input of the control circuit is upstream of and connected to an amplifier. The amplifier may be configured so that its amplification factor has a value of 1 in a first condition and takes a value larger than 1 in a second condition. Moreover, the amplification may be set to a value of larger than 1 only if the voltage at the converter output is inside a tolerance range that is provided for the usual operation of the power factor correction circuit. Outside of this tolerance range, the amplification of the amplifier is then exactly 1. In doing so, the usual operation of the integrated control circuit is not disturbed, particularly during start-up.

The invention belongs to the technical field of neutral beam injection in a controllable nuclear fusion auxiliary heating method, and discloses a runway type Faraday shielding structure for a radio frequency ion source. In the structure, a Faraday shielding cylinder comprises a runway-shaped shielding cylinder, a first water inlet pipe and a first water outlet pipe, the shielding cylinder comprises a cylinder side wall, a cylinder top wall and a first buried pipe water cooling structure, a gap is formed in the cylinder side wall, and the first water inlet pipe and the first water outlet pipe are connected with a first inlet and a first outlet of the first buried pipe water cooling structure respectively; the Faraday shielding back plate comprises a runway-shaped back plate, a second water inlet pipe and a second water outlet pipe, a second buried pipe water cooling structure is arranged in the back plate, and the second water inlet pipe and the second water outlet pipe are connected with a second inlet and a second outlet of the second buried pipe water cooling structure respectively. According to the invention, the power of the radio frequency coil can be improved, the device is suitable for a high-power and long-pulse operation system, and long-term stable operation of a high-power radio frequency electron source can be maintained.

The present invention relates to operating a filament of an X-ray tube. In order to provide X-ray tubes with improved wear out, a control device (10) for pulsed operation of a generator for an X-ray tube is provided. The X-ray tube may be controlled to provide a plurality of X-ray pulses, wherein two subsequent pulses are temporally separated by an emission pause. The emission pause comprises at least a first part and a second part. A filament current is provided to a cathode filament of the X-ray tube such that, in the emission pause between two subsequent pulses, during a first part of the pause a first filament current is provided and during a second part of the pause a second filament current is provided, the first filament current being lower than the second filament current. By operating the filament in this way, the filament temperature can be reduced, resulting in significantly less wear and longer lifetime of the X-ray tube.

Methods, systems, and devices for electric machine torque adjustment based on waveform multiples are disclosed herein. One electric machine controller, arranged to direct pulsed operation of an electric machine, utilizes a pulse controller that calculates a first average measured torque from sensed torque values over a first time period and a second average measured torque from sensed torque values over a second time period, wherein the first and second time periods are different time periods.

This invention discloses a method for evaluating the performance recovery of an electrolysis system after a pulsing operation. The method includes the following steps: Step 1: Collecting electrolysis system performance data for a baseline period before pulsing, the pulsing period, and the recovery evaluation period after pulsing; Step 2: Preprocessing the collected data; Step 3: Based on the preprocessed data from Step 2, fitting a natural decay trend within the baseline period before pulsing and extrapolating to obtain a non-interventional prediction curve; Step 4: Calculating four evaluation indicators within the recovery evaluation period after pulsing: recovery amount, recovery stability, improvement in decay slope, and recovery sustainability. The evaluation results can be used for selecting / recommending pulsing parameter combinations to achieve performance recovery and lifespan extension under energy consumption constraints.

Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length / speed of light <˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.

The generator (11) suitable for pulse operation according to the invention includes a power factor correction circuit (21) with an integrated circuit (31). The voltage detector input (VSENSE) of the control circuit (31) is connected upstream to an amplifier (35). It is possible to configure the amplifier (35) such that its amplification factor has a value of 1 under a first condition and a value greater than 1 under a second condition. Furthermore, the amplification factor can be set to a value greater than 1 only when the voltage at the converter output is within the tolerance provided for the normal operation of the power factor correction circuit (21). Outside this tolerance range, the amplification factor of the amplifier (35) is then exactly 1. In doing so, especially during startup, the normal operation of the integrated control circuit (31) is not disturbed.

A method is provided for controlling the operation of at least a first electromachine among at least one electromachine mounted on a vehicle having at least one resonant frequency. The pulse operation of the first electromachine is instructed to supply a desired average output, and the pulse operation causes the first electromachine to alternate between a first output level greater than the desired average output and a second output level less than the desired average output. At least several transitions between the first output level and the second output level are controlled. At least one notch filter at the at least one resonant frequency of the vehicle is provided.

The invention discloses a convolutional spiking neural network recognition system and method for high-dynamic single-photon imaging, and the system comprises a photon event compression module which carries out the sparse processing and event flow reconstruction of a continuous photon trigger sequence in a high-dynamic range, so as to reduce the data bandwidth and highlight the effective photon trigger information; the counting pulse time conversion module is used for mapping the compressed photon event sequence to a time domain feature so as to realize unified expression of high photon flow and low photon flow conditions; the common-mode noise suppression module is used for filtering noise and intercepting effective data in a time domain; the pipelined convolution pulse operation module is used for performing efficient feature extraction on the preprocessed photon event data; and the storage module is used for storing the convolution weight and the neuron membrane potential required in the convolution operation module. According to the invention, real-time feature extraction with low resource consumption can be realized under a high-dynamic photon event condition, and SPAD image processing and intelligent identification performance can be improved.

The application belongs to the technical field of all-solid-state laser, and particularly relates to a three-wavelength mid-infrared solid laser based on Tm 3+ The three-wavelength mid-infrared solid laser has a continuous operation mode and a pulse operation mode, and comprises a pump laser, a beam collimation and focusing system, a resonant cavity and a dichroic mirror arranged along an optical path; when the three-wavelength mid-infrared solid laser is in the pulse operation mode, an electro-optic Q-switching system is arranged in the resonant cavity. The three-wavelength mid-infrared solid laser based on Tm 3+ ions 3 F4→ 3 H6、 3 H4→ 3 H5 and 3 H5→ 3 F4 three energy levels, and the energy level regulation means of cascade laser oscillation at about 1.9 microns, about 2.3 microns and about 3.8 microns can effectively improve quantum efficiency, reduce thermal effect of the laser crystal, and realize efficient operation of three-wavelength mid-infrared continuous and pulse lasers. The application can simultaneously and sensitively monitor multiple gases by using one laser, has the advantages of compact structure and low price, and can greatly promote the development of gas detection technology.

The application discloses a nonvolatile storage operation method and system based on an Ovonic threshold switch. Based on the discovery that a threshold voltage value and an off-state resistance value are strongly positively correlated, the off-state resistance value can be adjusted by performing repeated unidirectional pulse operations on the Ovonic threshold switch, and the corresponding threshold voltage is adjusted accordingly, so that the Ovonic threshold switch has a threshold state with sufficient distinguishability. Based on the conversion of the Ovonic threshold switch between two threshold states with obvious differences, nonvolatile storage of information can be realized, and a threshold voltage window is large enough, which can significantly improve the accuracy of read operation and greatly reduce the complexity of external circuits. In addition, the Ovonic threshold switch has the advantages of nanosecond switching speed, good scalability and easy three-dimensional stacking, and is expected to be used in DRAM application scenarios under a technology node of less than 20 nm when realizing a nonvolatile storage unit, thereby greatly improving the storage density on the basis of matching the DRAM access speed.

This invention discloses a method for evaluating the performance recovery of an electrolysis system after a pulsing operation. The method includes the following steps: Step 1: Collecting electrolysis system performance data for a baseline period before pulsing, the pulsing period, and the recovery evaluation period after pulsing; Step 2: Preprocessing the collected data; Step 3: Based on the preprocessed data from Step 2, fitting a natural decay trend within the baseline period before pulsing and extrapolating to obtain a non-interventional prediction curve; Step 4: Calculating four evaluation indicators within the recovery evaluation period after pulsing: recovery amount, recovery stability, improvement in decay slope, and recovery sustainability. The evaluation results can be used for selecting / recommending pulsing parameter combinations to achieve performance recovery and lifespan extension under energy consumption constraints.

The application belongs to the technical field of neutral beam injection in the controllable nuclear fusion auxiliary heating method, and discloses a racetrack type Faraday shielding structure for a radio frequency ion source. In the structure, the Faraday shielding cylinder comprises a racetrack type shielding cylinder, a first water inlet pipe and a first water outlet pipe, the shielding cylinder comprises a cylinder side wall, a cylinder top wall and a first buried pipe water cooling structure, the cylinder side wall is provided with a gap, and the first water inlet pipe and the first water outlet pipe are connected with a first inlet and a first outlet of the first buried pipe water cooling structure respectively; the Faraday shielding back plate comprises a racetrack type back plate, a second water inlet pipe and a second water outlet pipe, a second buried pipe water cooling structure is arranged in the back plate, and the second water inlet pipe and the second water outlet pipe are connected with a second inlet and a second outlet of the second buried pipe water cooling structure respectively. The application can improve the power of the radio frequency coil, is suitable for a high-power and long-pulse operation system, and can maintain the long-term stable operation of the high-power radio frequency electron source.