10 results about "Pulse operation" patented technology

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP),- with an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) with a first transistor (T1) and a second transistor (T2) and a second half-bridge (HB2: T2, T3) with a third transistor (T3) and a fourth transistor (T4),- wherein the H-bridge (H) is controlled by a control unit (ST) and- wherein the H-bridge (H) can be operated by the control unit (ST) in pulsed mode (GPB) and in quasi-continuous mode (QDB) and- wherein the first half-bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1) and- wherein the second half-bridge (HB2: T3,T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2) and- wherein the light-emitting diode (LED1) is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and- wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and- wherein the first positive supply voltage (VCC1) and the second positive supply voltage (VCC2) can be equal and- wherein the first negative supply voltage (GND1) and the second negative supply voltage (GND2) can be equal and- wherein the light source, in particular the one or more light-emitting diodes (LED1), represents the load of the H-bridge (H) between the output of the first half-bridge (HB1: T1, T2) and the output of the second half-bridge (HB2: T3, T4) and- wherein the control device (ST) is designed to operate in pulsed mode (GPB) a “PAn” condition,in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a turn-on time (τpp), and- wherein the control device (ST) is designed so that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a clearing time (τpn), and- wherein the clearing time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1).

Headlight (SW), in particular for use in vehicles,- with at least one first LED (LED1) as a light source and- with an H-bridge (H) for controlling and supplying the first LED (LED1) with electrical energy,- wherein the headlight (SW) has a first operating mode (QDB) in which the first LED is used as a light source for illumination purposes and- wherein the headlight (SW) has a second operating mode (GPB) in which the first LED is used as a light source for generating light pulses (LP) in a function as a component of an optical data communication device and- wherein the H-bridge (H) is controlled by a control device (ST) and- wherein the H-bridge (H) can be operated by the control device (ST) in pulsed operation (GPB) in the second operating mode and in quasi-continuous operation (QDB) in the first operating mode and- wherein the control device (ST) is designed tothat in pulsed operation (GPB) a "PAn" state, in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-on time (τpp) by the H-bridge (H), and- wherein the control device (ST) is designed such that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-off time (τpn) by the H-bridge (H), and- wherein the turn-off time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1) is.,

Headlights (SW), in particular for use in vehicles, - with at least one first LED (LED1) as a light source, - wherein the headlight (SW) has a first operating mode (QDB) in which the first LED (LED1) is used as a light source for illumination purposes, and - wherein the headlight (SW) has a second operating mode (GPB) in which the first LED (LED1) is used as a light source for generating light pulses (LP) in a function as a component of an optical measuring device, - with an H-bridge (H) for controlling and supplying the first LED (LED1) with electrical energy, - wherein the H-bridge (H) is controlled by a control device (ST), and - wherein the H-bridge (H) can be operated by the control device (ST) in pulsed operation (GPB) in the second operating mode and in quasi-continuous operation (QDB) in the first operating mode, and - wherein the control device (ST) is designed tothat in pulsed operation (GPB) a "PAn" state, in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-on time (τpp) by the H-bridge (H), and- wherein the control device (ST) is designed such that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained for longer than a turn-off time (τpn) by the H-bridge (H), and- wherein the turn-off time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1) is.,

This application discloses a method, apparatus, electronic device, and storage medium for evaluating the performance of quantum operation gates. The method includes: inserting a delay of a target duration between adjacent Clifford gates in a quantum benchmark test sequence to obtain a first benchmark test sequence; determining a first incoherent error based on the quantum benchmark test sequence and the first benchmark test sequence; the target duration is n times the duration of a pulse operation gate rotating 90° around a target axis; inserting n pulse operation gates rotating 90° around a target axis between adjacent Clifford gates in a purity random benchmark test sequence to obtain a second benchmark test sequence; determining a second incoherent error based on the purity random benchmark test sequence and the second benchmark test sequence; using the difference between the second incoherent error and the first incoherent error as the target incoherent error; and evaluating the performance of the quantum operation gate based on the target incoherent error, thereby realizing the performance evaluation of microwave generating devices and microwave transmission links.

A laser device (1) is described, comprising a semiconductor laser (2) and a driving circuit (3) configured to operate the semiconductor laser (2) in pulsed operation, wherein: - the driving circuit (3) includes a switch (T1) switchable between an open state and a closed state; - the driving circuit (3) includes a first capacitor (C1) coupled to a power supply (5); - the switch (T1) is coupled to the first capacitor (C1); - the driving circuit (3) includes a second capacitor (C2); - the p-type contact (22) of the semiconductor laser (2) is capacitively coupled to the switch (T1) via the second capacitor (C2); - in the closed state of the switch (T1), the first capacitor (C1) discharges via the second capacitor (C2) and the semiconductor laser (2) to generate laser pulses; and - in the open state of the switch (T1), the second capacitor (C2) discharges. Furthermore, a method for operating the semiconductor laser (2) is described.

A generator suitable for the pulsed operation comprises a power factor correction circuit having an integrated circuit. The voltage detector input of the control circuit is upstream of and connected to an amplifier. The amplifier may be configured so that its amplification factor has a value of 1 in a first condition and takes a value larger than 1 in a second condition. Moreover, the amplification may be set to a value of larger than 1 only if the voltage at the converter output is inside a tolerance range that is provided for the usual operation of the power factor correction circuit. Outside of this tolerance range, the amplification of the amplifier is then exactly 1. In doing so, the usual operation of the integrated control circuit is not disturbed, particularly during start-up.

This invention discloses a method for evaluating the performance recovery of an electrolysis system after a pulsing operation. The method includes the following steps: Step 1: Collecting electrolysis system performance data for a baseline period before pulsing, the pulsing period, and the recovery evaluation period after pulsing; Step 2: Preprocessing the collected data; Step 3: Based on the preprocessed data from Step 2, fitting a natural decay trend within the baseline period before pulsing and extrapolating to obtain a non-interventional prediction curve; Step 4: Calculating four evaluation indicators within the recovery evaluation period after pulsing: recovery amount, recovery stability, improvement in decay slope, and recovery sustainability. The evaluation results can be used for selecting / recommending pulsing parameter combinations to achieve performance recovery and lifespan extension under energy consumption constraints.

The generator (11) suitable for pulse operation according to the invention includes a power factor correction circuit (21) with an integrated circuit (31). The voltage detector input (VSENSE) of the control circuit (31) is connected upstream to an amplifier (35). It is possible to configure the amplifier (35) such that its amplification factor has a value of 1 under a first condition and a value greater than 1 under a second condition. Furthermore, the amplification factor can be set to a value greater than 1 only when the voltage at the converter output is within the tolerance provided for the normal operation of the power factor correction circuit (21). Outside this tolerance range, the amplification factor of the amplifier (35) is then exactly 1. In doing so, especially during startup, the normal operation of the integrated control circuit (31) is not disturbed.

The application belongs to the technical field of all-solid-state laser, and particularly relates to a three-wavelength mid-infrared solid laser based on Tm 3+ The three-wavelength mid-infrared solid laser has a continuous operation mode and a pulse operation mode, and comprises a pump laser, a beam collimation and focusing system, a resonant cavity and a dichroic mirror arranged along an optical path; when the three-wavelength mid-infrared solid laser is in the pulse operation mode, an electro-optic Q-switching system is arranged in the resonant cavity. The three-wavelength mid-infrared solid laser based on Tm 3+ ions 3 F4→ 3 H6、 3 H4→ 3 H5 and 3 H5→ 3 F4 three energy levels, and the energy level regulation means of cascade laser oscillation at about 1.9 microns, about 2.3 microns and about 3.8 microns can effectively improve quantum efficiency, reduce thermal effect of the laser crystal, and realize efficient operation of three-wavelength mid-infrared continuous and pulse lasers. The application can simultaneously and sensitively monitor multiple gases by using one laser, has the advantages of compact structure and low price, and can greatly promote the development of gas detection technology.

This invention discloses a method for evaluating the performance recovery of an electrolysis system after a pulsing operation. The method includes the following steps: Step 1: Collecting electrolysis system performance data for a baseline period before pulsing, the pulsing period, and the recovery evaluation period after pulsing; Step 2: Preprocessing the collected data; Step 3: Based on the preprocessed data from Step 2, fitting a natural decay trend within the baseline period before pulsing and extrapolating to obtain a non-interventional prediction curve; Step 4: Calculating four evaluation indicators within the recovery evaluation period after pulsing: recovery amount, recovery stability, improvement in decay slope, and recovery sustainability. The evaluation results can be used for selecting / recommending pulsing parameter combinations to achieve performance recovery and lifespan extension under energy consumption constraints.