Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device

A technology of chemical vapor deposition and microwave electron cyclotron, which is applied in the direction of gaseous chemical plating, metal material coating technology, coating, etc., can solve the problem that the wafer processing area and uniformity cannot be satisfied, and there is no batch scale production, wafer processing Small area and other problems, to achieve the effect of enhancing automation and production efficiency, improving process stability and repeatability, and good uniformity

CN101144155AInactive Publication Date: 2008-03-19XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2008-03-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention discloses microwave electron cyclotron resonance plasma body chemical vapor deposition equipment, which comprises a microwave power source and a transmission system 101, a microwave resonance cavity 102, a coating chamber and a specimen stage system 103, a vacuum system 104, a gas circuit system 105, an automatic sheet transmission system 106, and a controlling system 107, wherein, magnetic field devices 306 which are lined at equal intervals are arranged in the microwave resonance cavity; the specimen stage system is arranged inside the coating chamber; the microwave resonance cavity, the vacuum system, and the automatic sheet transmission system are respectively connected with a coating chamber 809, the microwave power source and the transmission system are connected with the microwave resonance cavity; a controlling software is solidified in the host computer of the controlling system; the working states of the microwave power source and the transmission system, the coating chamber and the specimen stage system, the vacuum system, and the gas circuit system are respectively controlled through interfaces, and thus the deposition technological process of a film is completed. The present invention has the advantages that the big area uniformity is good, the deposition rate is high, the automaticity and the production efficiency are high, the reliability is good, the power loss is small, and the stability and the repeatability are good.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronic process equipment, and relates to thin film deposition equipment, in particular to a microwave electron cyclotron resonance plasma chemical vapor deposition equipment. Background technique

[0002] Microwave Electron Cyclotron Resonance Plasma Chemical Vapor Deposition (ECCVD) technology is one of the important technical foundations of deep submicron microfabrication technology. Electron cyclotron resonance ECR means that when the input microwave frequency ω is equal to the electron cyclotron frequency ω ce Resonance occurs when microwave energy is coupled to electrons, and the energy-gained electrons ionize neutral gas molecules to generate a discharge. By adjusting the magnetic field, the resonance condition is reached in a certain area of ​​the discharge chamber, which is called the ECR area. When the microwave frequency is 2.45GHz, the magnetic induction intensity B=0.0875T of electr...

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Embodiment Construction

[0036] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0037] 1, the microwave electron cyclotron resonance plasma chemical vapor deposition equipment of the present invention includes a microwave power source and transmission system 101, a microwave resonant cavity 102, a process chamber and a sample stage system 103, a vacuum system 104, and a gas path system 105 , automatic film transfer system 106, control system 107. The structure of each system is shown in Figure 2-9.

[0038]Referring to Fig. 2, the microwave power source and transmission system 101 is composed of a microwave generator 201, a circulator 202, a water load 203, a power meter 204, a directional coupler 205, a pin adjuster 206, a short circuit piston 207, a rectangular waveguide 208, a rectangular It is composed of a coaxial waveguide converter 209 and a microwave resonant cavity coaxial waveguide 210 . The connection relationship of each pa...