The present invention discloses microwave electron cyclotron resonance plasma body chemical vapor deposition equipment, which comprises a microwave power source and a transmission system 101, a microwave resonance cavity 102, a coating chamber and a specimen stage system 103, a vacuum system 104, a gas circuit system 105, an automatic sheet transmission system 106, and a controlling system 107, wherein, magnetic field devices 306 which are lined at equal intervals are arranged in the microwave resonance cavity; the specimen stage system is arranged inside the coating chamber; the microwave resonance cavity, the vacuum system, and the automatic sheet transmission system are respectively connected with a coating chamber 809, the microwave power source and the transmission system are connected with the microwave resonance cavity; a controlling software is solidified in the host computer of the controlling system; the working states of the microwave power source and the transmission system, the coating chamber and the specimen stage system, the vacuum system, and the gas circuit system are respectively controlled through interfaces, and thus the deposition technological process of a film is completed. The present invention has the advantages that the big area uniformity is good, the deposition rate is high, the automaticity and the production efficiency are high, the reliability is good, the power loss is small, and the stability and the repeatability are good.