Precipitation method and device for plasma reinforced film

A thin film deposition device and plasma technology, which are applied in ion implantation plating, coating, electrical components, etc., can solve the problems of limited source of raw materials, difficulty in applying refractory metals, etc., to improve the quality of thin film products, widely applicable to raw materials, Increase the effect of atomic energy

Inactive Publication Date: 2006-07-12
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the chemical vapor deposition method needs to transport the raw materials to the plasma reaction chamber in the form of gas (such as methane, carbon-containing gases such as ethylene), so the source of its raw materials is limited; in addition, most metal elements exist in the form of solid compounds. It is not gaseous, so the application range of this device is limited to the thin film deposition of silicon and carbon elements, and it is difficult to apply to other refractory metals

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  • Precipitation method and device for plasma reinforced film
  • Precipitation method and device for plasma reinforced film
  • Precipitation method and device for plasma reinforced film

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Embodiment Construction

[0026] The implementation of the present invention will be described below with specific examples.

[0027] see figure 2 , the plasma-enhanced thin film deposition device 30 of the embodiment of the present invention mainly includes: a reaction chamber 31, which is a closed cavity body, and a vent (not shown) is opened on one side of the reaction chamber 31, and three gas Sources 51, 53 and 55 are respectively connected to the vent and communicated with the reaction chamber through flow controllers 52, 54 and 56; wherein, the gas source 51 can provide argon (Ar), krypton (Kr) or Xenon (Xe); gas source 53 can provide a mixed gas of argon and nitrogen (N2); gas source 55 can provide argon and hydrogen (H2), argon and methane (CH4) or argon and ethane (C2H6) of mixed gas. The switch and flow of the reaction gas can be controlled by a flow controller.

[0028] A pair of magnetic coils 32 and 33 are arranged on the top attachment outside the reaction chamber 31, which are respe...

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PUM

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Abstract

The invention provides a plasma strengthen thin film deposit appliance and the thin film deposit method. The appliance comprises: a confined chamber, an electromagnetic means used to generate the magnetic field with intended intensity in plasma generating area of the intended chamber, a micro-wave equipment used to generate and send micro-wave to the plasma generating area, a pair of misfiring target which are opposite positioned on the two sides of the plasma generating area inside the chamber, wherein each misfiring target is touched with a cathode, a holder used to hold the handled unit, wherein the micro-wave frequency matches the magnetic field intensity to generate the electron cyclotron resonance and high-energy ion to bombard the misfiring target so that the target atom is active and deposited on the unit's surface to form the thin film. It also discloses a method for using the plasma deposition thin film.

Description

【Technical field】 [0001] The invention relates to a method and device for depositing thin films by means of plasma enhanced sputtering, in particular to a method and equipment for forming thin films by means of microwave plasma enhanced sputtering. 【Background technique】 [0002] Plasma is called "the fourth state of matter", which is a system composed of various flowable charged particles. At present, the artificially generated plasma is mainly obtained by gas discharge method, which is mainly composed of electrons, ions, neutral particles or particle clusters. Because the plasma is excited by electromagnetic energy, which is different from the previous activation by thermal energy, the plasma can be used to lower the reaction temperature, which can be called low-temperature plasma technology. Low-temperature plasma technology has been widely used in many disciplines such as materials, microelectronics, chemical industry, machinery and environmental protection, and has ini...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/46
CPCC23C14/352C23C14/357H01J37/32192H01J37/32678H01J37/3405
Inventor 陈杰良
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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