Method for controlling nanocrystalline graphene size in carbon film through electron cyclotron resonance (ECR) electron irradiation density

A technology of electron irradiation and density control, applied in sputtering plating, ion implantation plating, vacuum evaporation plating, etc., can solve the problems of inconvenient precise control of nanocrystalline graphene size, high requirements for substrate materials and processing equipment

Active Publication Date: 2014-07-23
XI AN JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such preparation conditions have high requirements for substrate materials and processing equipm

Method used

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  • Method for controlling nanocrystalline graphene size in carbon film through electron cyclotron resonance (ECR) electron irradiation density
  • Method for controlling nanocrystalline graphene size in carbon film through electron cyclotron resonance (ECR) electron irradiation density
  • Method for controlling nanocrystalline graphene size in carbon film through electron cyclotron resonance (ECR) electron irradiation density

Examples

Experimental program
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Effect test

Embodiment 1

[0026] 1) Clean the p-type Si (100) substrate ultrasonically in a mixed solvent of acetone and ethanol, and then dry it naturally; fix the substrate on an area of ​​12.56cm 2 on the substrate rack and put it into the vacuum chamber; after the two-stage vacuuming of the mechanical pump and the molecular pump, when the vacuum degree of the system reaches 2×10 -4 Pa, through the argon, and stabilize the pressure at 4 × 10 -2 Pa: Apply a magnetic coil with a current of 420A to generate a magnetic field, introduce microwaves with a microwave power of 160W and couple with the magnetic field to generate plasma, and stabilize for 20 minutes.

[0027] Before coating, use argon ions to clean the surface of the substrate; after that, turn on the target sputtering bias -300V, and the argon ions in the plasma accelerate the bombardment of the carbon target, so that the carbon atoms in the carbon target are released into the plasma space, Deposit and form a carbon film on the surface of th...

Embodiment 2

[0031] 1) Clean the p-type Si (100) substrate ultrasonically in a mixed solvent of acetone and ethanol, and then dry it naturally; fix the substrate on an area of ​​12.56cm 2 on the substrate rack and put it into the vacuum chamber; after the two-stage vacuuming of the mechanical pump and the molecular pump, when the vacuum degree of the system reaches 4×10 -4 Pa, through the argon, and make the pressure stable at 2×10 -2 Pa: Apply a current of 350A to the magnetic coil to generate a magnetic field, introduce microwaves with a microwave power of 200W to couple with the magnetic field to generate plasma, and stabilize for 20 minutes.

[0032] Before coating, use argon ions to clean the surface of the substrate; after that, turn on the target sputtering bias -250V, and the argon ions in the plasma accelerate the bombardment of the carbon target, so that the carbon atoms in the carbon target are released into the plasma space, Deposit and form a carbon film on the surface of the...

Embodiment 3

[0036] 1) Clean the p-type Si (100) substrate ultrasonically in a mixed solvent of acetone and ethanol, and then dry it naturally; fix the substrate on an area of ​​12.56cm 2 on the substrate rack and put it into the vacuum chamber; after the two-stage vacuuming of the mechanical pump and the molecular pump, when the vacuum degree of the system reaches 3×10 -4 Pa, through the argon, and make the pressure stable at 6×10 -2 Pa: Apply a current of 400A to the magnetic coil to generate a magnetic field, and introduce microwaves with a microwave power of 300W to couple with the magnetic field to generate plasma, which is stable for 20 minutes.

[0037] Before coating, use argon ions to clean the surface of the substrate; after that, turn on the target sputtering bias -280V, and the argon ions in the plasma accelerate the bombardment of the carbon target, so that the carbon atoms in the carbon target are released into the plasma space, Deposit and form a carbon film on the surface ...

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Abstract

The invention discloses a method for controlling nanocrystalline graphene size in a carbon film through electron cyclotron resonance (ECR) electron irradiation density. An ECR plasma processing system is utilized, the microwave power is regulated to change in a range from 160 to 400W, and change of electron irradiation density in a range from 30 to 120mA/cm<2> can be realized. The nanocrystalline graphene size in the carbon film under different electron irradiation densities is characterized by utilizing a transmission electron microscope and a Raman spectrum, and when the electron irradiation density is gradually increased from 30mA/cm<2> to 120mA/cm<2>, the average nanocrystalline graphene size is gradually increased from 1.09nm to 2.69nm. According to the control method provided in the invention, the nanocrystalline graphene size in the carbon film is conveniently and accurately controlled.

Description

technical field [0001] The invention belongs to the field of carbon film preparation, and in particular relates to a method for controlling the size of nanocrystalline graphene in a carbon film by ECR electron irradiation density. Background technique [0002] With the in-depth development of nanoscience and engineering technology, nanometer surface manufacturing is developing in the direction of structure controllability, shape precision and performance integration. Due to the diversity of its allotropes, carbon-based nanosurfaces exhibit excellent properties such as low friction coefficient, high wear resistance, high hardness, strong electrical conductivity, and biocompatibility, and have been widely used in the field of modern nanoengineering. . In particular, the discovery of structures such as graphene makes it possible to simultaneously obtain extremely high hardness, low friction and good electrical conductivity on the surface of carbon nanometers. However, since t...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/30C23C14/06
Inventor 刁东风陈成郭美玲范雪
Owner XI AN JIAOTONG UNIV
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