52results about How to "Reduced carrier mobility" patented technology

The present invention provides FinFETs on the same substrate utilizing various crystal planes for FET current channels in order to optimize mobility and/or to reduce mobility. An embodiment of the present invention provides a substrate having a surface oriented on a first crystal plane that enables subsequent crystal planes for channels to be utilized. A first transistor is also provided having a first fin body. The first fin body has a sidewall forming a first channel, the sidewall oriented on a second crystal plane to provide a first carrier mobility. A second transistor is also provided having a second fin body. The second fin body has a sidewall forming a second channel, the sidewall oriented on a third crystal plane to provide a second carrier mobility that is different from the first carrier mobility.

The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semiconductor layer. The electrode includes a first electrode portion made of a first conductive material, and a second electrode portion, made of a second conductive material different from the first conductive material, bonded to the first electrode portion. The first electrode portion is in contact with the P-type group III-V nitride semiconductor layer, and the second electrode portion is in contact with the N-type group III-V nitride semiconductor layer.

Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

An organic electroluminescent device (1) including an anode (2), a cathode (6), and at least a first layer (3), a second layer (4), and a third layer (5) provided between the anode (2) and the cathode (6) in that order from the anode side. At least one of the first to third layers (3), (4), and (5) includes a phosphorescent compound. At least one of the first to third layers (3), (4), and (5) is an emitting layer. At least three compounds respectively forming the first layer (3), the second layer (4), and the third layer (5) other than the phosphorescent compound are compounds of the following formula (1).

wherein R¹ to R⁷ each represent a hydrogen atom or a substituent, provided that adjacent substituents may form a ring.

A semiconductor device and a method of manufacturing the same are provided. A multi-component high-k interface layer containing elements of the substrate is formed from a ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment. Thus, the present invention may also avoid the growth of the interface layers and the degradation of carrier mobility. Furthermore, the present invention may further alleviate the problem of high interface state and interface roughness caused by direct contact of the high-k gate dielectric layer with high dielectric constant and the substrate, and thus the overall performance of the device is effectively enhanced.

A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.

An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A thin film transistor array panel includes: a substrate; a first gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor on the gate insulating layer; an etch stopper on a channel of the semiconductor; a source electrode and a drain electrode on the semiconductor and facing each other with respect to the first gate electrode; and a second gate electrode on the channel of the semiconductor and in a same layer as the source electrode and the drain electrode. The second gate electrode is electrically separated from the source electrode and the drain electrode.

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

The invention discloses a ferro-electric field effect transistor based on a structured carbon nano tube striped array and a manufacturing method of the ferro-electric field effect transistor. According to the unit structure of the transistor, a bottom electrode layer (1) is arranged on the bottom layer, a ferro-electric film insulated gate layer (2) and a structured carbon nano tube striped array channel layer (3) are sequentially arranged on the middle layer, and a top layer is arranged on the structured carbon nano tube striped array channel layer (3) and comprises a transistor source electrode (4) and a transistor drain electrode (5); carbon nano tubes are single-walled carbon nano tubes, or double-walled carbon nano tubes or multi-walled carbon nano tubes. According to the ferro-electric field effect transistor, the on-state current and the switch ratio are large, carrier mobility is high, the starting voltage is small, the storage window is wide, and meanwhile the ferro-electric field effect transistor has the advantages of being simple in structure and a buffering layer is not needed, interface contact between a ferro-electric layer and a semiconductor layer is good, and large-area soft devices are easy to obtain. The manufacturing method is simple in technology, convenient to operate and low in cost and dispense with expensive equipment, and large-area and large-scale industrial production is easy to realize.

The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.

A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a first gate insulating film made of a high-k insulating film formed on a first channel region, and a first gate electrode having a first conductive portion provided on and contacting the first gate insulating film and a second conductive portion. The second MIS transistor includes a second gate insulating film made of the high-k insulating film formed on a second channel region, and a second gate electrode having a third conductive portion provided on and contacting the second gate insulating film and a fourth conductive portion. The third conductive portion has a film thickness smaller than that of the first conductive portion, and is made of the same composition material as that of the first conductive portion.

A thin film transistor panel includes an insulating substrate. The insulating substrate includes a number of parallel source lines, a number of parallel gate lines crossed with the source lines, and a number of girds defined by the source lines and the gate lines. Each of the girds includes a pixel electrode and a thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The source electrode is connected with one of the source lines defining the grid. The drain electrode is spaced from the source electrode and connected with the pixel electrode. The semiconducting layer is connected with the source electrode and the drain electrode. The semiconducting layer includes a semiconducting carbon nanotube layer. The gate electrode is connected with one of the gate lines defining the grid.

The invention belongs to the technical field of microelectronic devices. The invention discloses an analog HfOx/HfOy homojunction memristor and a regulation and control method thereof. The homojunction memristor comprises a lower electrode layer, a functional layer and an upper electrode layer which are sequentially stacked from bottom to top, and the functional layer is an HfOx/HfOy homojunctionfunctional layer formed by stacking an HfOx layer and an HfOy layer from bottom to top; for the HfOx/HfOy homojunction functional layer, 1.6<x<1.8, 1.9<y<2, and the thickness of the HfOx layer is larger than that of the HfOy layer. According to the invention, the key device structure, especially the functional layer composition and the like, is improved; the hafnium oxide lamination with high/lowoxygen vacancies grown in a stacked manner is used as the resistive function layer, and compared with the prior art, the technical problems of small resistance gradual change window, low operation speed and poor consistency of an analog memristor and an electronic synaptic bionic device based on the analog memristor can be effectively solved.

The invention discloses a method for improving write redundancy of a high SRAM (static random access memory). An NMOS (n-channel metal oxide semiconductor), a PMOS (p-channel metal oxide semiconductor) and an upper pulling pipe with cover layers are involved. The method comprises the following steps of: firstly simultaneously removing the cover layers of the NMOS device and the upper pulling pipe; and carrying out carbon injection on the PMOS and the upper pulling pipe with the cover layers so that a source drain end of the NMOS and a source drain end of the upper pull pipe form a crystal lattice structure and the tensile stress in a channel direction is improved. Through the method for improving the write redundancy of the high SRAM, disclosed by the invention, a carbon injection process is utilized to the source drain end of the upper pull pipe so that the tensile stress of the upper pull pipe in the channel direction is improved, the carrier mobility of the upper pull pipe is effectively reduced, the equivalent resistance of the upper pull pipe is increased, and simultaneously the write redundancy of an RAM (random-access memory) is improved.

The present invention belongs to the technical field of quantum dots, especially relates to a carrier transport material and a preparation method thereof, and a QLED device. The carrier transport material comprises metal-oxide semiconductor nanocrystallines modified with an alkoxy silane coupling reagent, the structural general formula is H2NRSi(OM)3, wherein M is the metal-oxide semiconductor nanocrystalline, and R is a non-alkoxy carbon chain in the alkoxy silane coupling reagent. The carrier transport material can perform passivation of the surface of the metal-oxide semiconductor nanocrystalline for isolating from water and oxygen to reduce the negative influences of the surface defects on the hole and electron electron recombination in the quantum dots, increase the distances betweenthe metal-oxide semiconductor nanocrystallines, weaken the carrier mobility of the metal-oxide semiconductor nanocrystallines, have a carrier balance effect on the device and finally improve the luminous efficiency of the device.

A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.

The present invention discloses a photoelectric detector with a two-dimensional transition metal sulfide film nanoscroll, which is made by the following steps: firstly depositing ammonium tetrathiomolybdate on a silicon/silica substrate by a bubbling method, then growing monolayer disulphide on the surface of the substrate by a thermal decomposition method, afterwards putting a drop of ethanol solution gently on one side of the disulphide film, resulting in spontaneous curling of the disulphide film to form the nanoscroll helix structure since volatilization of the ethanol solution produces atemperature gradient and a surface tension gradient at interface contact, finally depositing gold electrodes on both sides of the nanoscroll by a thermal evaporator and connecting the gold electrodesat both sides by the nanoscroll to obtain the photoelectric detector based on the two-dimensional transition metal sulfide film nanoscroll (TMDC-NSs) helix structure. The photoelectric detector of thepresent invention has short photoresponse time, fast recovery time, good stability, low cost and controllability, large-scale production and great application value.