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Organic light emitting display device and preparation method thereof

A light-emitting display and organic technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complex structure and preparation process, and achieve the effect of stable properties and simplified structure

Active Publication Date: 2015-07-01
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Therefore, what the present invention aims to solve is the problem that the organic light-emitting display device designed in the prior art is complicated in structure and manufacturing process in order to protect the metal oxide semiconductor layer, and provides an organic light-emitting display device with simple structure and manufacturing process

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  • Organic light emitting display device and preparation method thereof
  • Organic light emitting display device and preparation method thereof
  • Organic light emitting display device and preparation method thereof

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Embodiment Construction

[0040] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0041] The present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art, and the present invention will only be defined by the claims. In the drawings, the sizes and relative sizes of layers and regions are exaggerated for clarity. It should be understood that when an element such as a layer, region, or substrate is referred to as being "formed on" or "disposed on" another element, the element may be directly disposed on the other element, or there may be Intermediate element...

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Abstract

The invention discloses an organic light emitting display device and a preparation method thereof. The organic light emitting display device comprises a substrate, and a thin film transistor and an organic light emitting diode arranged on the substrate, and a first amorphous silicon layer is directly arranged on a metal oxide semiconductor layer in the thin film transistor. The organic light emitting display device is capable of preventing source / drain electrode layer patterning damaging the metal oxide semiconductor layer and effectively preventing the ultraviolet emitting to the metal oxide semiconductor, and the structure of the organic light emitting display device is effectively simplified. The preparation method for the organic light emitting display device is capable of simultaneously realizing the purposes of etching blocking layer and ultraviolet blocking through arranging the amorphous silicon layer on the metal oxide semiconductor layer, the preparation technique is effectively simplified, and the product yield and economical benefit are improved.

Description

Technical field [0001] The invention relates to the field of semiconductors, in particular to an organic light emitting display device and a preparation method thereof. Background technique [0002] In recent years, with the continuous increase in the size of the display panel, the frequency of the drive circuit has continued to increase. The mobility of the existing amorphous silicon thin film transistor (a-Si TFT) is generally 0.5cm 2 / V·s, it is difficult to meet the use requirements of large-size, high-drive display frequency display panels in the prior art. In the prior art, there are two types of high mobility thin film transistors: polysilicon thin film transistors (LTPS TFT) and metal oxide thin film transistors (taking indium gallium zinc oxide semiconductor thin film transistors as an example). The comparison of their performance is shown in Table 1. . Although the research on polysilicon thin film transistors is relatively early, the uniformity of polysilicon thin fil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L21/77
Inventor 卜维亮
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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