7622results about "Cable/conductor manufacture" patented technology

A physiological measurement system can include a low noise patient cable that connects a monitor and a noninvasive optical sensor. The cable has a plurality of emitter wires configured to communicate a drive signal between the monitor and at least one emitter. The cable also has a plurality of detector wires configured to communicate a physiological signal between at least one detector responsive to the emitter and the monitor. The emitter and detector wires are orthogonally disposed so that crosstalk between the two functionally different wires is mitigated.

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

This application relates to slot antenna devices based on Composite Right and Left Handed (CRLH) metamaterial (MTM) structures.

A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like.

A transparent conductive film wherein carbon nanotubes are discursively embedded in the surface portion of a resin film is produced by (A) dispersing carbon nanotubes on a substrate surface, (B) forming a transparent resin film over the substrate on which the carbon nanotubes are dispersed, and then (C) separating the thus-formed resin film. This is a novel technique for realizing a highly transparent conductive film which is flexible and highly conductive even when amount of carbon nanotubes used therefor is small.

A method is provided for processing a substrate including providing a processing gas comprising hydrogen gas and an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described.

A method of forming a plurality of solid conductive bumps for interconnecting two conductive layers of a circuit board with substantially coplanar upper surfaces. The method comprises the steps of applying a continuous homogenous metal layer onto a dielectric substrate, applying a first photoresist and exposing and developing said first photoresist to define a pattern of conductive bumps; etching the metal layer exposed by said development to form said plurality of conductive bumps; removing said first photoresist; applying a second photoresist onto the metal layer; exposing and developing said second photoresist to define a pattern of conductive bumps and circuit lines; etching the metal layer exposed by said development to form a pattern of circuit lines in said metal layer; and removing said second photoresist. The methods of the present invention also provides for fabricating a multilayer circuit board and a metallic border for providing rigidity to a panel.

A peeling layer 2 is formed on an element-forming substrate 1, an element-forming layer 3 including an electrical element is formed on the peeling layer, the element-forming layer is joined by means of a dissolvable bonding layer 4 to a temporary transfer substrate 5, the bonding force of the peeling layer is weakened to peel the element-forming layer from the element-forming substrate, the layer is moved to the temporary transfer substrate 5 side, a curable resin 6 is applied onto the element-forming layer 3 which has been moved onto the temporary transfer substrate 5, the resin is cured to form a transfer substrate 6, and the bonding layer 4 is dissolved to peel the temporary transfer substrate 5 from the transfer substrate 6, resulting in a structure in which a transfer substrate is formed directly on the element-forming layer 3. The separation and transfer technique can be used to form a substrate with better flexibility and impact resistance directly on a semiconductor element, without an adhesive layer on the semiconductor device that is produced.

Disclosed are a printed wiring board having micro-via holes highly reliable for conduction and a method of making the micro-via hole by providing a coating or sheet of an organic substance containing 3 to 97% by volume of at least one selected from a metal compound powder, a carbon powder or a metal powder having a melting point of at least 900° C. and a bond energy of at least 300 kJ/mol on a copper foil as an outermost layer of a copper-clad laminate having at least two copper layers, or providing a coating or sheet of the same after oxidizing a copper foil as an outermost layer, irradiating the coating or sheet with a carbon dioxide gas laser at an output of 20 to 60 mJ/pulse, thereby removing a micro-via-hole-forming portion of at least the copper foil as the outermost layer, then irradiating micro-via-hole-forming portions of the remaining layers with a carbon dioxide gas laser at an output of 5 to 35 mJ/pulse to make a micro-via hole which does not penetrate through the copper foil in a bottom of the micro-via hole, and electrically connecting the copper foil as the outermost layer and the copper foil in the bottom of the micro-via hole with a metal plating or an electrically conductive coating composition.

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc₀ while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

The present invention provides a method of manufacturing a touch screen, comprising the steps of: a) forming a conductive layer on a substrate; b) forming an etching resist pattern on the conductive layer; and c) forming a conductive pattern having a line width smaller than the line width of the etching resist pattern by over-etching the conductive layer by using the etching resist pattern and a touch screen manufactured by the method. According to the present invention, a touch screen comprising a conductive pattern having an ultrafine line width can be economically and efficiently provided.

In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles.

A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.

The present invention relates to a variety of conductive ink compositions comprising a metal complex compound having a special structure and an additive and a method for preparing the same, more particularly to conductive ink compositions comprising a metal complex compound obtained by reacting a metal or metal compound with an ammonium carbamate- or ammonium carbonate-based compound and an additive and a method for preparing the same.

This invention provides an electrically conductive ink comprising an electrically conductive material and a vinyl chloride/vinyl acetate/hydroxyalkyl (meth)acrylate copolymer resin. There is also provided a noncontact-type medium comprising a base material and, provided on the base material, an electrically conductive circuit formed using the electrically conductive ink, and an IC chip mounted in the state of being electrically conducted to the electrically conductive circuit. An electrically conductive circuit, which is in a thin film form, can be used as an antenna circuit for noncontact-type media, has a low volume resistivity on the order of 10⁻⁵ Ω·cm, and is highly reliable under a high temperature and high humidity environment, can be formed by using the electrically conductive ink at a low temperature in a short time.

Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

A touch panel is made by forming a routing and pad pattern group on a substrate to include first and second routing lines, first pad electrodes connected to the first routing line, and second pad electrodes connected to the second routing line, by using a first mask; forming a sensor electrode pattern group on the substrate having the routing and pad pattern group formed thereon to include first sensor electrodes formed in a first direction, second sensor electrodes formed in a second direction, and connection portions that each connects adjacent first sensor electrodes, by using a second mask; forming a first insulating layer to include contact holes to expose portions of the second sensor electrodes, respectively, by using a third mask; and forming bridges that each connects adjacent second sensor electrodes through the contact holes and a second insulating layer on the bridges, by using a fourth mask.

A method according to embodiments of the present invention comprises providing a magnetic stack comprising a magnetic layer sub-stack comprising magnetic layers and a bottom conductive electrode and a top conductive electrode electrically connecting the magnetic layer sub-stack at opposite sides thereof; providing a sacrificial pillar on top of the magnetic stack, the sacrificial pillar having an undercut with respect to an overlying second sacrificial material and a sloped foot with increasing cross-sectional dimension towards the magnetic stack, using the sacrificial pillar for patterning the magnetic stack, depositing an insulating layer around the sacrificial pillar, selectively removing the sacrificial pillar, thus creating a contact hole towards the patterned magnetic stack, and filling the contact hole with electrically conductive material.

A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a first plurality of gate structures; blanket depositing a first dielectric layer over the first plurality of gate structures; blanket depositing a second dielectric layer over the first dielectric layer; etching back through a thickness of the first and second dielectric layers; blanket depositing a first photoresist layer to cover the first plurality and patterning to selectively expose at least a second plurality of gate structures; isotropically etching the at least a second plurality of gate structures for a predetermined time period to selectively etch away a predetermined portion of the first dielectric layer; and, selectively etching away the second dielectric layer to leave gate structures comprising a plurality of associated sidewall spacer widths.

The invention provides a silver nanowire-based transparent conductive thin film and a preparation method thereof. The preparation method is characterized by comprising the following steps of: forming a uniform adhesive layer on a substrate by organic polymer fluid; and forming a silver nanowire conductive layer on the adhesive layer, wherein silver nanowires can be firmly adhered to the adhesive layer. Through the adhesive layer, the firmness and the reliability of the silver nanowire transparent conductive thin film are greatly improved, the problem of easiness of falling of the silver nanowires is solved, and the selection range of the substrate is expanded. If the adhesive layer is formed by polyvinyl alcohol on a polymethyl methacrylate (PMMA) substrate, the visible light transmittance reaches 84 percent when square resistance is 130.

Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

A self-supporting cable includes a main cable constructed by covering a cable core with an inner cover layer and installing one or more strength members inside the inner cover layer such that they lie on a plane passing through the central axis thereof; a support member; and an outer cover layer formed so as to cover the main cable and the support member while they are arranged in parallel. A support member portion including the support member and a part of the outer cover layer and a main cable portion including the main cable and a part of the outer cover layer are connected by connecting portions, which are also a part of the outer cover layer, in the longitudinal direction thereof. The main cable portion is made longer than the support member portion so that there is an allowance in the length thereof.

Improved stretchable printed circuit boards, and fabrication methods thereof, are described. The improved stretchable printed circuit boards include a serpentine conductive trace enclosed by stretchable dielectric material. The stretchable dielectric material has a serpentine shape itself, realized by crenulated edges. The crenulated edges reduce torsional strain on the conductive trace and are formed, for example, by cutting away sections of the stretchable dielectric material proximate segments of the serpentine conductive trace where the serpentine conductive trace changes direction.

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

A flat cable 10 is constituted by integrally forming a shield 20 and an external sheath 24 with a plurality of core wires 12 and 18. Then, a slit S for branching each of the core wires 12 and 18 is formed at a terminal of the flat cable 10. Further, a coupling portion 26 is formed at a part P in which this slit S is formed. The coupling portion 26 is a means for mechanically coupling the shield 20 thereto. Preferably, the coupling portion 26 is constituted by an external sheath 24 for riveting the shield 20 thereto by penetrating the shield 20 and then connecting the shield 20 thereto.

A method for forming a conductive layer is disclosed, which has the following steps. First, a substrate is provided, and then a patterned photoresist layer having an undercut is formed on the substrate. After that, at least one conductive layer is deposited on the substrate. Finally, the patterned photoresist layer is lifted off; wherein the shape of the conductive layer remaining on the substrate is complementary to that of the patterned photoresist layer.