175 results about "Transfer technique" patented technology

A peeling layer 2 is formed on an element-forming substrate 1, an element-forming layer 3 including an electrical element is formed on the peeling layer, the element-forming layer is joined by means of a dissolvable bonding layer 4 to a temporary transfer substrate 5, the bonding force of the peeling layer is weakened to peel the element-forming layer from the element-forming substrate, the layer is moved to the temporary transfer substrate 5 side, a curable resin 6 is applied onto the element-forming layer 3 which has been moved onto the temporary transfer substrate 5, the resin is cured to form a transfer substrate 6, and the bonding layer 4 is dissolved to peel the temporary transfer substrate 5 from the transfer substrate 6, resulting in a structure in which a transfer substrate is formed directly on the element-forming layer 3. The separation and transfer technique can be used to form a substrate with better flexibility and impact resistance directly on a semiconductor element, without an adhesive layer on the semiconductor device that is produced.

The present invention is directed to systems and methods for all-frequency relighting by representing low frequencies of lighting with spherical harmonics and approximate the residual high-frequency energy with point lights. One such embodiment renders low-frequencies with a precomputed radiance transfer (PRT) technique (which requires only a moderate amount of precomputation and storage), while the higher-frequencies are rendered with on-the-fly techniques such as shadow maps and shadow volumes. In addition, various embodiments are directed to a systems and methods for decomposing the lighting into harmonics and sets of point lights. Various alternative embodiments are directed to systems and methods for characterizing the types of environments for which the described decomposition is a viable technique in terms of speed (efficiency) versus quality (realism).

A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 mum which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C₂H₂, CH₄, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

The present invention provides a method that includes accessing a first identifier associated with an idle mobile unit having a first session with a first subnet and a second identifier associated with a second subnet and determining whether the idle mobile unit has moved from the first subnet to the second subnet based on first portions of the first and second identifiers. The method also includes determining whether the first and second subnets are included in a first plurality of subnets based on second portions of the first and second identifiers and selecting one of a plurality of call session transfer techniques for transferring the first session from the first subnet to the second subnet based on whether the first and second subnets are included in the first plurality of subnets.

A coating composition for fabrics includes wetted microspheres containing a phase change material dispersed throughout a polymer binder, a surfactant, a dispersant, an antifoam agent and a thickener. Preferred phase change materials include paraffinic hydrocarbons. The microspheres may be microencapsulated. To prepare the coating composition, microspheres containing phase change material are wetted ahd dispersed in a dispersion in a water solution containing a surfactant, a dispersant, an antifoam agent and a polymer mixture. The coating is then applied to a fabric. In an alternative embodiment, an extensible fabric is coated with an extensible binder containing microencapsulated phase change material to form an extensible, coated fabric. The coated fabric is optionally flocked. The coated fabrics are manufactured using transfer techniques.

The present invention provides a transfer technique that can improve the transfer ability when reinforcing and expanding the transfer system, with effectively using the existing system. The transfer system includes tracks that link a plurality of manufacturing equipments, a plurality of carriers having different performances that run on the tracks to transfer objects between the manufacturing equipments and the like in a factory space having a plurality of manufacturing equipments, and the plurality of carriers having different performances are simultaneously provided and run on the same tracks. The plurality of carriers are composed of old carriers and new carriers that provided together and run depending on their own performances (running performance such as running speed, acceleration/deceleration, and the like and transfer performance such as transfer speed and the like).

The invention relates to a trusted security enhancement method in a desktop virtualization environment. The method comprises the following steps that: a thin client and a server are started and automatically carry out trusted measurement and trust chain transferring from bottom-layer hardware to upper-layer application software; thin client trusted access and platform bidirectional remote attestation is carried out; and after the successful access authentication, remote desktop connection software is started and the thin client obtains a desktop of a server virtual machine and carries out access and operation. According to the invention, the integrity and confidentiality principles of the terminal platform and communication transmission in the desktop virtualization environment can be fully considered; and techniques like physical trust root-based trust link transfer technique, the trusted BIOS measurement technique, the trusted platform access and remote attestation technique and the like can be utilized comprehensively. Therefore, defects of the traditional desktop virtualization safety protection measure can be overcome; and the management difficulty of the virtual data center can be effectively reduced and the security can be improved.

Using a thermal transfer technique to transfer a laser-absorbing dye from a transfer medium to a receiving substrate, then activating the dye by exposure to a laser source to affect a weld between the receiving substrate and an adjacent second substrate at a desired joint region. The same laser may optionally be used to both transfer the laser-absorbing dye to a receiving substrate and weld the receiving substrate and the second substrate.

The invention provides a full-automatic luminescent immunoassay system based on a micronano-magnetic bead electromagnetic transfer technique. The system includes a computer and a detection box. The detection box is a sealable lightproof box, and comprises a first motor, a second motor, a membrane rupture device, an electromagnetic stirring rod, a Teflon coating or a disposable plastic jacket, immunomagnetic beads, a sample pool, a temperature control device, a photoelectric conversion device, a bottom reading light path, a waste consumable material recovery area or ultrasonic cleaning equipment, a reagent bin consumable material and a consumable material adapter, a guide rail and an electromagnet. The system provided by the invention is based on a magnetic bead transfer method, simplifies the detection steps, integrates the detection module, avoids a complex liquid path system, saves the detection time while realizing full automation and miniaturization of the immunodetection system, and also lowers the system cost at the same time.

Disclosed herein are methods of patterning features in a structure, such as a layer of material used in forming integrated circuit devices or in a semiconducting substrate, using a multiple sidewall image transfer technique. In one example, the method includes forming a first mandrel above a structure, forming a plurality of first spacers adjacent the first mandrel, forming a plurality of second mandrels adjacent one of the first spacers, and forming a plurality of second spacers adjacent one of the second mandrels. The method also includes performing at least one etching process to selectively remove the first mandrel and the second mandrels relative to the first spacers and the second spacers and thereby define an etch mask comprised of the first spacers and the second spacer and performing at least one etching process through the etch mask on the structure to define a plurality of features in the structure.

This invention relates to methods for making immune compatible tissues and cells for the purpose of transplantation and tissue engineering, using the techniques of nuclear transfer and cloning. Also encompassed are methods for determining the effect on immune compatibility of expressed transgenes and other genetic manipulations of the engineered cells and tissues.

The invention discloses a method for transferring a graphene film, which comprises the following steps: preparing a graphene film on an initial substrate; directly attaching and aligning the target substrate with the prepared graphene film; and stripping the graphene film from the initial substrate by an electrochemical or metallic corrosion process, and attaching the graphene film to the target substrate, and finally, cleaning the target substrate with the graphene film to complete the transfer of the graphene film. The method implements the transfer of the graphene film in a direct attaching and aligning mode, thereby avoiding introducing the transitional support in the transfer process, preventing the support residue from polluting the graphene film, and effectively lowering the damage and wrinkles on the graphene film in the transfer technique. The method is simple to operate and convenient to use in different graphene fields.

Disclosed is a method for combining two plates in the fabrication process of an enclosure baseplate of a printed circuit or an integrated circuit. The method includes the following steps: splicing two chip plates through a bonding sheet so as to make a machining plate which is big in thickness, higher in rigidity and can satisfy common equipment machining requirements; processing pattern transfer to the spliced machining plate and developing a necessary circuit diagram of a conductor on the surface of the machining plate; developing an insulating medium layer and a conducting copper layer on the surface of the newly developed circuit diagram of the conductor through the method of lamination; repeating above processes so as to form a multilayer machining plate; separating the machining plate at two sides of the splicing sheet from the splicing sheet after the machining plate reaches certain thickness and rigidity, thus forming two machining plates; and respectively processing the two machining plates through regular lamination, boring, electroplating and pattern transfer techniques until the necessary circuit board and the enclosure baseplate are finished. The method requires no special equipment or machining tools and can reduce cost by a large margin and improve production efficiency and yield.

A digital to analog converter augmented with Direct Charge Transfer (DCT) techniques. A digital to analog converter augmented with DCT and CDS techniques. A digital to analog converter augmented with Postfilter Droop Compensation.

The invention belongs to the technical field of mass transfer, and particularly discloses a Micro LED mass transfer device and method based on demagnetization through selective heating. The device comprises a substrate and a magnetic square array arranged on the upper surface of the substrate, wherein each magnetic square in the magnetic square array has magnetism, and the upper surface and the lower surface of each magnetic square are different magnetic poles; each magnetic square can lose magnetism under the action of external heating. When transfer operation is performed, the magnetic square array is in one-to-one correspondence with the Micro LED array with the magnetism, the magnetic square array is adopted to integrally pick up the Micro LED array, then the magnetic squares are selectively heated to allow the magnetic squares to lose the magnetism to selectively transfer the Micro LED onto a target circuit substrate with the magnetism. The Micro LED mass transfer device and method can achieve the patterning and selectivity mass transfer of the Micro LED, and is high in applicability and accurate in positioning, etc.