Carrier transport material and preparation method thereof, and QLED device
A technology for transporting materials and carriers, which is applied in the field of QLED devices, carrier transport materials and their preparation, can solve problems such as high mobility, affecting device luminous efficiency and stability, surface defects, etc., and achieve simple process and satisfy And the effect of adapting to industrial production and reducing surface defects
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[0034] Correspondingly, a method for preparing a carrier transport material comprises the following steps:
[0035] S01: Provide metal oxide semiconductor nanocrystals and alkoxysilane coupling agents, the non-alkoxy carbon chain ends of the alkoxysilane coupling agents contain amino groups;
[0036] S02: dissolving the metal oxide semiconductor nanocrystal and the alkoxysilane coupling agent in a solvent to obtain a mixed solution;
[0037] S03: heat-treating the mixed solution, hydrolyzing one end of the alkoxysilane coupling agent and connecting with the metal oxide semiconductor nanocrystal through Si—O—, to obtain the carrier transport material.
[0038] In the preparation method of the carrier transport material provided by the embodiment of the present invention, the metal oxide semiconductor nanocrystal and the alkoxysilane coupling agent are directly dissolved in a solvent and heated to obtain a material that reduces surface defects of the metal oxide semiconductor nano...
Embodiment 1
[0078] 1) The preparation method of the zinc oxide modified by APS:
[0079] First, 0.1-1 g of zinc oxide nanocrystals are added into a mixed solvent of 2-20 mL of absolute ethanol and distilled water, and ultrasonically dispersed for 30 minutes to fully disperse the zinc oxide nanocrystals to obtain a dispersion liquid of zinc oxide nanocrystals. Then, 0.4-4 mL of absolute ethanol solution of APS was added dropwise into the dispersion of zinc oxide nanocrystals, and the resulting mixed solution was heated at 80°C for 12 hours, and dried at low temperature to obtain ZnO@APS composite particles.
[0080] 2) Preparation of upright structure QLED devices:
[0081] A hole injection layer PEDOT:PSS and a hole transport layer TFB are sequentially deposited on a substrate containing an ITO anode;
[0082] Depositing a quantum dot luminescent layer on the hole transport layer;
[0083] Deposit a layer of ZnO@APS electron transport layer on the quantum dot light-emitting layer;
[0...
Embodiment 2
[0086] 1) The preparation method of APS modified titanium dioxide:
[0087] First, 0.1-1 g of titanium dioxide nanocrystals are added into a mixed solvent of 2-20 mL of absolute ethanol and distilled water, and ultrasonically dispersed for 30 minutes to fully disperse the titanium dioxide nanocrystals to obtain a titanium dioxide nanocrystal dispersion. Then, 0.4-4mL of APS absolute ethanol solution was dropped dropwise into the dispersion of titanium dioxide nanocrystals, and the resulting mixed solution was heated at a constant temperature of 80°C for 12h, and dried at low temperature to obtain TiO 2 @APS Composite particles.
[0088] 2) Preparation of upright structure QLED devices:
[0089] A hole injection layer PEDOT:PSS and a hole transport layer TFB are sequentially deposited on a substrate containing an ITO anode;
[0090] Depositing a quantum dot luminescent layer on the hole transport layer;
[0091] Deposit a layer of TiO on the quantum dot light-emitting layer ...
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