Photoelectric detector with two-dimensional transition metal sulfide film nanoscroll

A photodetector and transition metal technology, applied in nanotechnology for sensing, nanotechnology for materials and surface science, nanotechnology, etc., can solve problems such as poor stability, poor photosensitivity, and poor light absorption effect

Inactive Publication Date: 2019-07-16
SHANDONG NORMAL UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] In order to solve the technical problems existing in the prior art, the purpose of the present invention is to provide a photodetector of a nano-scroll of a two-dimensional transition metal sulfide film and a preparation method thereof, which produces a novel coiled-coil structure Photodetectors can solve the shortcomings of current photodetectors such as poor photosensitivity, poor stability and poor light absorption effect

Method used

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  • Photoelectric detector with two-dimensional transition metal sulfide film nanoscroll
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  • Photoelectric detector with two-dimensional transition metal sulfide film nanoscroll

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preparation example Construction

[0024] Second object of the present invention is to provide the preparation method of above-mentioned photodetector, comprise the steps:

[0025] Deposit tetrathiomolybdenum / ammonium tungstate on silicon substrate;

[0026] Decompose tetrathiomolybdenum / ammonium tungstate into single-layer molybdenum disulfide / tungsten film by thermal decomposition method;

[0027] Add the ethanol solution dropwise on one side of the surface of the silicon substrate with a molybdenum disulfide / tungsten monolayer film, and the ethanol solution volatilizes to generate a temperature gradient and a surface tension gradient on the surface of the silicon substrate. Under the action of the two, disulfide The molybdenum / tungsten monolayer film automatically curls from one side to form a nanocoil helical structure;

[0028] The source and drain electrodes were etched by UV lithography on both sides of the nanoscroll helical structure to obtain a photodetector.

[0029] The grown disulfide films are m...

Embodiment 1

[0048] Nanoscroll-helical photodetector materials of two-dimensional transition metal dichalcogenide thin films, such as figure 2 The shown preparation roadmap includes the following preparation steps:

[0049] Deposit ammonium tetrathiomolybdate on the silicon / silicon dioxide substrate by bubbling method, and control the ambient temperature at 22-26°C:

[0050] 1) Put 0.2g of ammonium tetrathiomolybdate powder into a special scrubber bottle, add 1mL of dimethylformamide, and ultrasonicate the ammonium tetrathiomolybdate solution for 100 minutes to obtain ammonium tetrathiomolybdate solution.

[0051] 2) silicon / silicon dioxide substrate (the area of ​​the deposition surface of silicon substrate is 1cm 2 ) were successively washed with toluene, acetone, absolute ethanol, and deionized water for 30 minutes each.

[0052] 3) Place the clean silicon / silica substrate into the short end of the scrubber bottle.

[0053] 4) Connect the long mouth end of the gas collecting bottle...

Embodiment 2

[0069] Nanoscroll-helical photodetector materials of two-dimensional transition metal dichalcogenide thin films, such as figure 2 The shown preparation roadmap includes the following preparation steps:

[0070] Deposition of ammonium tetrathiomolybdate on silicon / silica substrates by bubbling:

[0071] 1) Take 0.2g of ammonium tetrathiotungstate powder and put it into a special scrubber bottle, add 1mL of dimethylformamide, and ultrasonicate the ammonium tetrathiotungstate solution for 100 minutes to obtain ammonium tetrathiomolybdate solution.

[0072] 2) silicon / silicon dioxide substrate (the area of ​​the deposition surface of silicon substrate is 50cm 2 ) were successively washed with toluene, acetone, absolute ethanol, and deionized water for 30 minutes each.

[0073] 3) Place the clean silicon / silica substrate into the short end of the scrubber bottle.

[0074] 4) Connect the long mouth end of the gas collecting bottle to argon gas, and the gas flow rate is 110 sccm...

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Abstract

The present invention discloses a photoelectric detector with a two-dimensional transition metal sulfide film nanoscroll, which is made by the following steps: firstly depositing ammonium tetrathiomolybdate on a silicon/silica substrate by a bubbling method, then growing monolayer disulphide on the surface of the substrate by a thermal decomposition method, afterwards putting a drop of ethanol solution gently on one side of the disulphide film, resulting in spontaneous curling of the disulphide film to form the nanoscroll helix structure since volatilization of the ethanol solution produces atemperature gradient and a surface tension gradient at interface contact, finally depositing gold electrodes on both sides of the nanoscroll by a thermal evaporator and connecting the gold electrodesat both sides by the nanoscroll to obtain the photoelectric detector based on the two-dimensional transition metal sulfide film nanoscroll (TMDC-NSs) helix structure. The photoelectric detector of thepresent invention has short photoresponse time, fast recovery time, good stability, low cost and controllability, large-scale production and great application value.

Description

technical field [0001] The invention belongs to the technical field of new materials, and relates to a preparation method of a photoelectric sensor material that can be used in the field of photoelectric detection, in particular to a photodetector of a nano-volume of a two-dimensional transition metal sulfide film and a preparation method thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Photoelectric Conversion - The technology of converting light into electrical signals is at the heart of many technologies that affect our everyday lives. Applications such as video imaging, optical communication, biomedical imaging, security, night vision, motion detection, etc. h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0352H01L31/103H01L31/18B82Y15/00B82Y30/00B82Y40/00
CPCB82Y15/00B82Y30/00B82Y40/00H01L31/032H01L31/035281H01L31/103H01L31/18Y02P70/50
Inventor 陈朔杨诚聂文广
Owner SHANDONG NORMAL UNIV
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