Flexible self-powered photoelectric detector and preparation method and application thereof

A photodetector and self-powered technology, which is applied in the field of photoelectric detection, can solve the problems of weak photoresponse ability and low photoconversion rate, and achieve the effect of improving flexibility, strong photoresponse current, improving photoresponse ability and photoconversion rate

Active Publication Date: 2021-03-26
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Chinese invention patent CN109119495A (published on January 01, 2019) discloses a flexible photodetector and its preparation method. The photodetector includes a flexible substrate, an MXene flexible electrode formed on the surface of the flexible substrate, and a CsPbBr on the surface of MXene flexible electrodes 3 The semiconductor layer, the flexible photodetector described in this invention has good flexibility, but has the problems of weak photoresponse ability, low photoconversion rate and the need for an external circuit

Method used

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  • Flexible self-powered photoelectric detector and preparation method and application thereof
  • Flexible self-powered photoelectric detector and preparation method and application thereof
  • Flexible self-powered photoelectric detector and preparation method and application thereof

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Embodiment 1

[0038] A flexible self-powered photodetector with a structure such as figure 1 As shown, it includes a flexible positive electrode 2, a flexible negative electrode 3, a photoelectric material layer 1 drop-coated on the flexible positive electrode, a separator 4 between the flexible positive electrode and a flexible negative electrode, and an electrolyte adhered to the separator; wherein the photoelectric material layer is CoNi- CaO 2 / N / Mo 2 CT x composite material.

[0039] The preparation method of the flexible self-powered photodetector comprises the following steps:

[0040] S1. Preparation of CoNi-CoNiO 2 / N / Mo 2 CT x Composite material:

[0041] (1) Synthesis of Mo 2 CT x Two-dimensional material: choose 1g 200 mesh Mo 2 Ga 2 Spread C powder on the bottom of a plastic beaker and add 20mL of 48wt% hydrofluoric acid solution drop by drop, stir at a constant temperature of 60°C for 160 hours, wash with deionized water until the pH value is 6 after etching, and pl...

Embodiment 2

[0047] A flexible self-powered photodetector, its structure is similar to embodiment 1, the difference is that the photoelectric material layer is CoNi-CoNiO 2 / N / Ti 3 C 2 T x composite material.

[0048] The preparation method of the flexible self-powered photodetector comprises the following steps:

[0049] S1. Preparation of CoNi-CoNiO 2 / N / Ti 3 C 2 T x Composite material:

[0050] (1) Synthesis of Ti 3 C 2 T x Two-dimensional material: choose 1g 200 mesh Ti 3 AlC 2 Spread the powder on the bottom of a plastic beaker and add 20mL of 45wt% hydrofluoric acid solution drop by drop, stir at a constant temperature of 55°C for 150 hours, wash with deionized water until the pH value is 7 after etching, and place the product in 60 ℃ dried overnight in a vacuum oven to obtain multilayer Ti 3 C 2 T x Powder; weigh 100mg of Ti 3 C 2 T x The powder was dispersed in 15mL of 1wt% TMAOH, and 0.176g of ascorbic acid was added. After stirring vigorously for 10min, the mix...

Embodiment 3

[0056] A flexible self-powered photodetector, its structure is similar to embodiment 1, the difference is that the photoelectric material layer is CoNi-CoNiO 2 / N / Nb 2 CT x composite material.

[0057] The preparation method of the flexible self-powered photodetector comprises the following steps:

[0058] S1. Preparation of CoNi-CoNiO 2 / N / Nb 2 CT x Composite material:

[0059] (1) Synthesis of Nb 2 CT x Two-dimensional material: choose 1g 200 mesh Nb 2 Spread AlC powder on the bottom of a plastic beaker and add 20mL of 50wt% hydrofluoric acid solution drop by drop, stir at a constant temperature of 65°C for 170 hours, wash with deionized water until the pH value is 6 after etching, and place the product in Dry overnight in a vacuum oven at 60°C to obtain multilayer Nb 2 CT x Powder; weigh 100mg of Nb 2 CT x The powder was dispersed in 15mL of 1wt% TMAOH, and 0.176g of ascorbic acid was added. After stirring vigorously for 10 minutes, the mixture was transferred ...

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Abstract

The invention discloses a flexible self-powered photoelectric detector. The flexible self-powered photoelectric detector comprises a flexible positive electrode, a flexible negative electrode, a photoelectric material layer dispensed on the flexible positive electrode, a diaphragm arranged between the flexible positive electrode and the flexible negative electrode, and an electrolyte adhered to the diaphragm; and the photoelectric material layer is made of a CoNi-CoNiO2 / N / MXene composite material. The flexible self-powered photoelectric detector can directly convert a detected optical signal into a recordable electric signal, and the device can be folded and bent to realize optical detection in a complex environment. The photoelectric detector provided by the invention is high in light response speed and high in sensitivity, and can be applied to flexible wearable electronic equipment.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, and more specifically, to a flexible self-powered photodetector and its preparation method and application. Background technique [0002] A photodetector is a sensor that converts optical signals into electrical signals, and is widely used in military and civilian life, such as environmental monitoring, solar power generation, biomedicine, and remote control. The electrodes of traditional photodetectors are usually ITO electrodes. The photodetectors made of ITO electrodes are rigid and cannot meet the requirements of the rapid development of flexible integrated circuit technology and manufacturing processes in the future. Therefore, more and more people focus on the development of flexible photodetectors. [0003] Chinese invention patent CN109119495A (published on January 01, 2019) discloses a flexible photodetector and its preparation method. The photodetector includes a flexib...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/101H01L31/18
CPCH01L31/02019H01L31/101H01L31/18Y02P70/50
Inventor 罗劭娟吴梓环招家富王林杰吴传德蒋樾冯斯桐陆凤连陈财胜
Owner GUANGDONG UNIV OF TECH
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