The invention discloses a
silicon-based micro-channel plate (MCP) structure and a manufacturing method thereof, relates to the technical field of
semiconductor device manufacturing, and aims to solve the problems of poor high
temperature resistance, insufficient
etching precision, film layer quality defect and process
synergy deficiency of a traditional glass-based / organic-based MCP. An 8-inch N-type
monocrystalline silicon wafer is adopted in the structure, the thickness of the N-type
monocrystalline silicon wafer is (250-350) + / -25 microns, micropores of 3-10 microns are evenly distributed, the hole
pitch is 7-22 microns, the inclination angle is 6-12 degrees, the side wall roughness is smaller than or equal to 50 nm, the perpendicularity deviation is smaller than or equal to + / -0.5 degrees, an AlO or AlO / HfO / AlO
electron multiplication layer with the thickness of 10-30 nm is prepared on the inner wall of a channel through ALD, and a Cr / Ni
electrode with the thickness of 50-80 nm is plated on the surface. According to the method, the OES is used for monitoring SiFs in real time. According to the invention, the double targets of < = 30% of 1kg
impact fracture rate and stable
electron multiplication
gain are achieved, the tolerable temperature reaches 800 DEG C, the secondary
electron emission efficiency is improved by 25%, the production efficiency is improved by 20%, the cost is reduced by 15%, and the method is suitable for the high-sensitivity detection fields of
night vision imaging, particle detection and the like.