118results about "Tin compounds" patented technology

The invention discloses a high-entropy perovskite hydroxide, a preparation method thereof and application of the high-entropy perovskite hydroxide in electro-catalysis of nitrate to synthesize ammonia, and belongs to the technical field of high-entropy perovskite hydroxides. The high-entropy perovskite hydroxide is ASn (OH) 6, and A is one or more of Zn, Mn, Co, Ni and Cu. The high-entropy perovskite hydroxide electrocatalyst which is simple in synthesis method, stable in structure and easy in raw material obtaining is obtained, the electrocatalyst can be applied to electrocatalysis of nitrate to synthesize ammonia, the highest NH3 Faraday efficiency is 98.16%, and the yield is 5.12 mg h <-1 > mgcat <-1 >. And a foundation is laid for developing other high-entropy perovskite compounds as electrocatalysts for electrocatalytic synthesis of nitrate.

This disclosure provides systems and methods for purifying precursor compounds. One method includes one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein the boiling point of the first solvent is higher than the boiling point of the crude product solution; feeding at least the mixture of the crude product solution and the first solvent into an evaporator; and collecting a distillate comprising the precursor compound from the evaporator, wherein the purity of the precursor compound in the distillate is greater than 95%, as determined by [further steps]. 1 Determined by H NMR. Other methods and systems are presented in this paper.

The application belongs to the technical field of electrochemical energy storage materials, and discloses application of a sulfide-based hollow nanobrick heterojunction anode coating material and a preparation method thereof, in particular, application of the sulfide-based hollow nanobrick heterojunction anode coating material to an aqueous zinc ion battery, wherein the sulfide-based hollow nanobrick heterojunction comprises an X metal sulfide and a Y metal sulfide, and the heterojunction is represented as XS-YS n , 0 < n < 3, X is Zn, and Y is selected from one of Sn, Co, Cu or Mo; the preparation method comprises the following steps: mixing a zinc salt and a fluoride etchant, and one of a tin salt, a cobalt salt, a copper salt or a molybdenum salt, and then performing a hydrothermal reaction to obtain a bimetal-based hollow nanobrick precursor; and then performing sulfurization calcination to obtain the XS-YS n . The sulfide-based hollow nanobrick heterojunction can effectively inhibit zinc dendrite growth and interface side reactions, thereby significantly improving the electrochemical stability of the material, and further prolonging the cycle life of the aqueous zinc ion battery.

[Problem] To provide: a dispersion liquid of SnS particles which has good dispersibility and does not precipitate during storage; a method for producing the dispersion liquid; and a method for producing SnS particles. [Solution] A SnS dispersion in which SnS particles are dispersed in an aqueous or alcohol-based dispersion, said SnS dispersion being characterized in that the average major diameter of the dispersed SnS particles is 100-2000 nm, the average minor diameter of the SnS particles is 50-1000 nm, and the average aspect ratio (major diameter / minor diameter) is 1.2-1.6; also provided is a method for producing a SnS dispersion liquid, which comprises: a vapor deposition step for heating a SnS raw material contained in an evaporation source container and collecting SnS in a collection container; a separation step for separating the obtained vapor deposition product from the collection container to obtain SnS particles; and a dispersion step in which the vapor deposition product obtained in the separation step is dispersed in an aqueous dispersion. In the vapor deposition step, the heating temperature of the evaporation source container is 700-900 DEG C, and the maximum collection container temperature of the collection container is 80-130 DEG C.

The invention relates to a method for synchronously preparing metastannic acid through ultrasonic enhancement and hydrolysis of low-concentration nitric acid, and belongs to the technical field of metastannic acid preparation. The preparation method comprises the following steps: slowly adding high-purity tin sheets into a dilute nitric acid solution in batches under the stirring condition at the temperature of 35-60 DEG C, and uniformly mixing to obtain a mixed system; and at the temperature of 35-60 DEG C, ultrasonic waves are applied to the mixed system for an ultrasonic enhanced oxidation dissolution-hydrolysis reaction for 30-50 min, so that tin sheets are oxidized and dissolved and are synchronously hydrated to generate metastannic acid precipitates, solid-liquid separation is carried out, solids are sequentially washed and dried, and a high-purity metastannic acid product is obtained. A passivation layer on the surface of the tin sheet is destroyed by utilizing the mechanical effect of ultrasound, and mass transfer is accelerated; the ultrasonic cavitation effect is used for promoting particle refinement and gel network depolymerization, and tin ion hydrolysis is promoted. The method is carried out at normal pressure, low acidity and low temperature, no nitrogen oxide brown smoke is generated in the whole reaction process, the metastannic acid yield is larger than or equal to 95%, and the method has the advantages of being mild in reaction, environmentally friendly, high in efficiency and good in product purity.

This invention discloses a method for preparing hollow metal sulfides based on a mild template method using calcium carbonate. Calcium chloride powder and potassium carbonate powder are uniformly dispersed separately in an alcohol solution. The two solutions are then mixed and allowed to stand for aging to obtain solution A. Simultaneously, thioacetamide is dissolved in the alcohol solution to obtain solution B, and a chloride is dissolved in the alcohol solution to obtain solution C. The chloride is either stannous chloride or copper chloride. Then, solutions B and C are added sequentially to solution A at a molar ratio of thioacetamide to chloride of 2:1 and mixed uniformly to obtain solution D. Solution D is then placed in a polytetrafluoroethylene (PTFE) reactor and reacted at 140–180°C for 12 hours. Carbon dioxide is then continuously bubbled through the reactor for 2–3 hours. The mixture is filtered and washed with water and ethanol to obtain the hollow metal sulfides. This invention can obtain hollow metal sulfides with different morphologies and avoids the contamination problems associated with high-temperature calcination or acid dissolution for template removal.

The application provides a Zn-doped Cu2SnS3 sodium ion battery negative electrode material and a preparation method thereof. Specifically, a precursor solution is transferred into a 50 mL polytetrafluoroethylene reaction kettle, and the temperature is kept at 200 DEG C for 36 hours, so that Zn-doped Cu2SnS3 particles with good crystallinity and uniform micron flower ball micro-morphology are obtained.

The present application relates to a kind of ultrasonic reinforced sodium stannate preparation method of tin oxide sheet low temperature, belong to sodium stannate preparation technical field.The present application will high-purity tin sheet be added to sodium hydroxide solution, under the condition of ultrasonic wave, control sodium hydroxide solution temperature is 20~30 ℃, slowly add hydrogen peroxide to 20~30% of preset total addition amount after continuing ultrasonic reinforced oxidation reaction 7~10min;Again, slowly add hydrogen peroxide after multiple times, continue ultrasonic reinforced oxidation reaction, the addition amount of hydrogen peroxide is 10~15% of preset total addition amount each time, ultrasonic reinforced oxidation reaction 4~8min after each hydrogen peroxide is added;Hydrogen peroxide is completely added according to preset total addition amount, continue ultrasonic reinforced oxidation reaction until tin sheet completely dissolves and obtains sodium stannate solution;Sodium stannate solution is filtered, concentrated, separated, washed, dried in turn and obtains sodium stannate product.The present application strictly controls oxidation reaction temperature to 20~30 ℃, reduces hydrogen peroxide volatilization, uses ultrasonic to reinforce hydrogen peroxide oxidation effect, improves tin dissolution effect.

The present application provides a thermoelectric material and a preparation method therefor. The preparation method for a thermoelectric material comprises: subjecting powder comprising an M element, an A element, and an L element to flash hot-press sintering treatment to obtain the thermoelectric material. M is a group IB element, A is a group IVA element, and L is a group VIA element, and the difference between the highest melting point element and the lowest melting point element among the M element, the A element, and the L element is ≥700°C. The preparation method can prepare a thermoelectric material having fewer defects, a high Seebeck coefficient, and a high thermoelectric figure of merit. The preparation method is simple, has a short preparation cycle, and is suitable for wide application.

Acidified metal oxides combined with non-acidified metal oxides used as a battery electrode active material.

To provide a semiconductor device that can be mass-produced with high reliability using a material suitable for semiconductor applications such as transistors and diodes, and a large substrate such as mother glass, a semiconductor device that has a transistor with a good electronic state at the interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film, and a highly reliable semiconductor device that is imparted with stable electrical characteristics to a transistor that uses an oxide semiconductor film as a channel.SOLUTION: A semiconductor device uses an oxide material containing crystals that are c-axis oriented and have a triangular or hexagonal atomic arrangement when viewed from the ab-plane, surface, or interface direction, and that are rotated around the c-axis.SELECTED DRAWING: Figure 1

This invention discloses a SnS / WS2@C composite electrode material, its preparation method, and its application, belonging to the field of tungsten disulfide nanomaterials technology. A precursor solution A is obtained by uniformly dispersing SnCl2·2H2O and CH3CSNH2 in anhydrous ethanol. After a solvothermal reaction, precursor solution A is cooled, centrifuged, washed, and freeze-dried to obtain powder B. Powder B, WCl6, and CH3CSNH2 are uniformly dispersed in anhydrous ethanol to obtain solution C. After a solvothermal reaction, solution C is cooled, centrifuged, washed, and freeze-dried to obtain powder D. Powder D is uniformly dispersed with glucose in deionized water to obtain precursor solution E. After a solvothermal reaction, precursor solution E is cooled, centrifuged, washed, and freeze-dried to obtain powder F. Powder F is calcined at high temperature to obtain the SnS / WS2@C composite electrode material. Performance testing of the prepared SnS / WS2@C composite electrode material revealed that it exhibits good electrochemical performance when used as a negative electrode in potassium-ion batteries.

The invention discloses a hydrophilic perovskite material and a preparation method and application thereof. The chemical formula of the hydrophilic perovskite material is AxByXz, A-site elements and B-site elements comprise K, Na, Mg, Ca, Sr, Ba, Bi, Sn, Pb, Zn, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and the like, and X comprises O or OH; the surface of the hydrophilic perovskite material has hydrophilic functional groups. The invention also discloses a hydrophilic perovskite material carbon composite material, which comprises a hydrophilic perovskite material and a carbon matrix material. The invention also discloses a hydrophilic perovskite coating formed by the hydrophilic perovskite material or the hydrophilic perovskite material carbon composite material. The hydrophilic perovskite coating has a dynamic regulation effect on the surface of the zinc negative electrode, so that the ion flux is homogenized, the uniform deposition of Zn < 2 + > ions is promoted, the appearance and growth of zinc dendrites are effectively inhibited, and the cycle performance of the battery is improved.

The invention belongs to the technical field of heterostructure construction, and particularly relates to a SnS2 / CsPbBr3 heterojunction as well as a preparation method and application thereof. The preparation method of the SnS2 / CsPbBr3 heterojunction comprises the following steps: taking a hexagonal 2D SnS2 nanosheet synthesized by a hydrothermal method as a growth template, combining with a 3D CsPbBr3 nanocube synthesized by a solution method, and successfully constructing the 2D / 3D SnS2 / CsPbBr3 heterojunction through an electrostatic self-assembly technology. The invention innovatively provides a heterojunction preparation strategy aiming at the problems of serious interface charge recombination, low photoresponse efficiency and the like of a metal halide perovskite material. Through an electrostatic self-assembly technology, a 2D / 3D SnS2 / CsPbBr3 heterojunction system is successfully constructed, and the problems of serious interface recombination, low light response rate and the like of metal halide perovskite in photoelectric application are successfully broken through.

The invention provides oxide semiconductor target material powder and a preparation method thereof, a semiconductor target material, an oxide semiconductor thin film and a thin film transistor, and belongs to the technical field of semiconductor materials and devices and microelectronics. Trivalent and tetravalent Tb ions in the oxide semiconductor target material powder provided by the invention can effectively relax photon-generated carriers, and after the oxide semiconductor target material powder is prepared into an oxide semiconductor film, the Tb ions are used as relaxation channels and recombination centers of photo-generated electrons; the ionization of deep energy level defects (mainly neutral oxygen vacancies near valence band tops) in the oxide semiconductor thin film under NBIS is inhibited, so that the NBIS stability of the thin film transistor is improved, the problem of threshold voltage negative drift of the thin film transistor is solved, impurities or crystal field splitting energy level defects cannot be introduced into Tb ions, electron transport is not affected, and the performance of the thin film transistor is improved. A TFT having good NBIS stability and high mobility is achieved.

The application discloses a method for quickly dissolving tin in sulfuric acid, comprising the following steps: S1, preparing two tin blocks, a sulfuric acid solution, a 4V direct current power supply, a wire, a corrosion-resistant reaction container, a heating device and protective articles; S2, checking the power supply and building the device; S3, connecting the two tin blocks with the positive and negative poles of the 4V direct current power supply respectively by the wire, and putting the tin blocks into the container containing the sulfuric acid solution to carry out an electric reaction; S4, after taking out the tin blocks, putting the tin block connected with the positive pole back into the sulfuric acid solution and heating to quickly dissolve the tin block; the tin blocks are pretreated by the 4V direct current, the surface of the positive tin block is electrochemically activated during the electric process, and then the tin block is heated at 60-90 DEG C; compared with a traditional direct heating dissolution mode, the dissolution time of the tin block pretreated by the electric process is obviously shortened, the complete dissolution time of the tin block treated by the electric process under the same condition is obviously lower than that of the untreated tin block, and the production efficiency can be effectively improved.

It provides materials suitable for semiconductor applications such as transistors and diodes. - Using large substrates such as glass to mass-produce highly reliable semiconductor devices. The present invention provides a semiconductor device that can perform the following: an oxide semiconductor film and a gate in contact with the oxide semiconductor film. The present invention provides a semiconductor device having a transistor with a good electronic state at the interface with an insulating film. By providing stable electrical characteristics to transistors using oxide semiconductor films as channels, reliability is improved. To manufacture high-performance semiconductor devices. [Solution] C-axis oriented and triangular or hexagonal when viewed from the direction of the surface or interface A semiconductor device using an oxide material containing crystals that have an atomic arrangement and are rotated around the c-axis.

The invention belongs to the field of detection application, and particularly relates to an Ag-coated SnS composite material, a preparation method of the Ag-coated SnS composite material and deep application of the Ag-coated SnS composite material in the field of dye molecule detection.The preparation method comprises the steps that firstly, tin trifluoromethanesulfonate and sodium thiosulfate serve as a tin source and a sulfur source respectively, and stannous sulfide is prepared through a hydrothermal method; then silver nitrate and sodium borohydride are utilized to attach silver to the surface of stannous sulfide through a chemical reduction method to obtain the Ag-coated SnS composite material, the obtained mixed material of the precious metal and the semiconductor utilizes the SERS technology to detect dye molecules in a trace mode, and the method has important significance in application to actual life.

The application discloses a sodium-ion layered positive electrode material, a preparation method and a positive electrode sheet. + , H + , F ‑ of a lithium-ion battery core recovery liquid; a sodium source and the lithium-ion battery core recovery liquid are prepared into a solution; (2) a sodium-ion layered positive electrode material is mixed into the solution to prepare a mixed slurry; (3) the mixed slurry is subjected to suction filtration and drying to obtain a precursor powder; and (4) the precursor powder is sintered to obtain the sodium-ion layered positive electrode material. The application overcomes the defects of poor cycle performance and unstable surface of the sodium-ion layered positive electrode material.

Provided is a solid-state battery that comprises a positive electrode part that includes a positive electrode active material, a negative electrode part that includes a negative electrode active material, and a solid electrolyte part. At least one of the positive electrode part and the solid electrolyte part includes a first solid electrolyte. The solid-state battery also comprises an interposing layer that is interposed between the positive electrode active material and the first solid electrolyte and contacts both the positive electrode active material and the first solid electrolyte. The first solid electrolyte includes Li, M, S, and O and has at least a crystal phase that has a tetragonal crystal structure. M is one or more elements that are selected from group 14 and group 15 and include at least Sn. The molar ratio of O to M is 0.1–3.0. The thickness of the interposing layer is less than 500 nm.

What is provided are a proton-conducting solid electrolyte which can exhibit high proton conductivity and stability in a low-temperature range and a medium-temperature range, an electrolyte layer formed of the proton-conducting solid electrolyte, and a battery. As an example, a proton-conducting solid electrolyte represented by a general formula: Ba1-αSc1-xMoxO3-δHy, in which α is −0.2 to 0.2, x is 0.1 to 0.3, y is 0 to 1-3x, and δ is 0 to ½-3x / 2, a proton-conducting solid electrolyte represented by a general formula: BaSc1-xMoxO3-δHy, in which x is 0.15 to 0.25, y is 0 to 1-3x, and δ is 0 to ½-3x / 2, or the like; an electrolyte layer, and a battery are provided.

A method of fabricating a halide perovskite having a general formula of ABX3, wherein A, B, and X are inorganic elements and X is a halide, the method including a vapor-liquid-solid process triggered by a catalyst formed from a noble metal; A nanowire of the halide perovskite and a photoelectronic device thereof.

The application discloses a quaternary tin chalcogenide compound and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The novel quaternary tin chalcogenide compound disclosed by the application has a structure in which transition metal Cd and Sn form a tetrahedral coordination with S respectively, the tetrahedral SnS4 and the tetrahedral CdS4 are connected through edge sharing to form an anion layer, the layers are also connected through edge sharing of the tetrahedral SnS4 and the tetrahedral CdS4 to form a three-dimensional open framework, and alkali metal ions Na + balance the compound charge as a balance cation. The Sn and Cd metal atoms are located on the crystallographic mirror surface, and the coordination polyhedron, i.e. the MS4 tetrahedron, is mirror image disordered in two directions. When the compound is used as an optical material, the photocurrent under simulated sunlight is 0.2 mu A / cm 2 , and the compound has potential application value in the optical aspect.

The present application relates to a metal organic framework (MOF) glass composite comprising metal halide perovskite, and a method for its preparation.

The invention provides a method of cascade flash (FWF) Joule heating and a system thereof. The FWF Joule heating process subjects an external feedstock in an external vessel to a flash Joule heating process, wherein the flash Joule heating process of the external feedstock causes conversion of an internal feedstock within an internal vessel (the internal vessel is within the external vessel) to a converted material.

Provided is a Sn / Ge halide nanocrystal represented by general formula (1): Cs3(Snα1Ge(1-α1))(Brβ1I(1-β1))5, wherein α1 is 0.00-0.40 and β1 is 0.00-1.00. According to the present invention, it is possible to provide a novel lead-free halide nanocrystal and lead-free halide nanocrystal composite having a high photoluminescence quantum yield and exhibiting a peak of emission from red to near infrared wavelengths.

Methods for producing metal sulfides generally include combining an alkali metal sulfide and a metal halide in an aprotic solvent to produce a mixture that includes an alkali metal halide and a metal sulfide. Additional methods include combining a first alkali metal sulfide, a second alkali metal sulfide, and a metal halide in an aprotic solvent to produce a mixture that includes a first alkali metal halide, a second alkali metal halide, and a metal sulfide. The methods may include adding a second solvent to cause an alkali metal halide to precipitate out of the mixture and improve the purity of the metal sulfide.

Provided are a highly dispersible sol containing metal oxide particles and a silane containing a plurality of polymerizable functional groups, and a varnish containing a thermosetting or photocurable resin using the sol and the varnish. The present invention is a metal oxide sol containing a silane compound represented by formula (1) and metal oxide particles, (In formula (1), R1 each independently represents an alkoxy group, an acyloxy group, or a halogen group, R2 each independently represents an alkyl group having 1-10 carbon atoms or an aryl group having 6-30 carbon atoms, R3 is a hydrogen atom or a methyl group, A1 is an alkylene group, A2, A3, and A4 each independently represent a methylene group or an oxygen atom, one of A2, A3, and A4 is an oxygen atom, and n is an integer of 1-3). Also disclosed is a varnish which contains the metal oxide sol and a thermosetting or photocurable resin. The varnish is used for nanoimprint.

The invention provides a gate material, an organic photoelectrochemical transistor sensor, a preparation method and application, and belongs to the technical field of sensors. According to the CdZnS-coated SnIn4S8 synthesized by the invention, a CdZnS-coated SnIn4S8 grid interface based on DNA double-chain embedded MB is constructed on an ITO electrode, and the detection of OFL is realized by utilizing the signal attenuation caused by MB falling due to the fact that a sensor basic signal with enhanced hole oxidation effect of MB on CdZnS-coated SnIn4S8 and OFL compete to combine with an aptamer. The detection linear range of the sensor is 1.0 * 10 <-14 >-1.0 * 10 <-6 > mol.L <-1 >, the detection limit is 1.3 * 10 <-15 > mol.L <-1 >, and the sensor is successfully used for detecting the content of ofloxacin in water. The method has the advantages of being green, environmentally friendly, wide in detection range, high in sensitivity, good in selectivity, high in anti-interference capacity, high in stability and the like.

The invention discloses a copper-based chalcogenide thermoelectric material and a preparation method and application thereof. The chemical formula of the thermoelectric material of the copper-based chalcogenide is Cu4-xSnS4, x is greater than or equal to 0 and less than or equal to 1, and preferably, x is equal to 0.4. The power factor of the prepared Cu3. 6SnS4 material can reach 11.01 (mu Wcm <-1 > K <-2 >) under 723K, and the ZT can reach 0.38. And a high thermoelectric figure of merit can be obtained by reducing the thermal conductivity on the basis of a high power factor subsequently, and the method is particularly suitable for the field of new energy.