98results about "Selenium/tellurium compunds" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention discloses a preparation method of a Bi2Te3-based thermoelectric material powder metallurgy precursor, which comprises the following steps of: performing hydrogen reduction on a thin strip sample or powder prepared from a zone melting bar of a bismuth telluride-based thermoelectric material at the temperature of 350-400 DEG C to obtain the Bi2Te3-based thermoelectric material powder metallurgy precursor. The Bi2Te3-based thermoelectric material powder metallurgy precursor can be used for preparing a bismuth telluride-based thermoelectric material for eliminating a donor-like effect through a powder metallurgy method. According to the method, powder can be prepared in the air, the donor-like effect generated in the powder preparation process can be eliminated through hydrogen reduction, the process of grinding and powder preparation in a protective atmosphere is avoided, the donor-like effect is eliminated at a lower temperature in a shorter time, the production process of the material can be simplified, the production cost can be saved, and the method is suitable for industrial production. And the optimal carrier concentration can be maintained while grains of the material are refined, and the optimal Seebeck coefficient is obtained.

The present invention discloses a preparation method and application of a class of silver nanocluster-embedded niobium polyacid crystalline materials with immunological activity, belonging to the technical field of pharmaceutical synthesis. The chemical formula of the silver nanocluster-embedded niobium polyacid crystalline materials with immunological activity is L x [Ag 30 Cl y (SeO3) (8‑y) (SiNb 18 O 54 )6]·zH2O; wherein, L is a counter cation or cationic group, 1 < x ≤ 70, 0 < y ≤ 8, 1 < z ≤ 150; the overall cluster structure of the silver nanocluster-embedded niobium polyacid crystalline materials with immunological activity is composed of the [Ag 30 Cl y (SeO3) (8‑y) (SiNb 18 O 54 )6] anion cluster and the corresponding counter cation or cationic group; this material has good water solubility and stability under physiological conditions, has high cytotoxicity and selectivity for tumor cells, especially CT26 colon cancer cells, can induce immunogenic death of tumor cells and activate the body's immune system, has little toxic and side effects on normal cells and organs, and has better biosafety than the traditional chemotherapeutic drug doxorubicin, and can be used as an anti-tumor immunotherapy drug in the biomedical field.

According to the invention, a one-pot synthesis strategy is adopted, a polyoxometallate with high proton conductivity and a pure inorganic three-dimensional frame structure is successfully synthesized by accurately controlling the reaction temperature, the pH value and the proportion of raw materials, and the chemical formula of the polyoxometallate is [H2N (CH3) 2] 8K3Na2H4 [Se4W35Ce2O124 (H2O) 4] Cl. 22H2O; based on the structural characteristics, the proton conductivity is further systematically tested under different temperature and humidity conditions; then, Arrhenius fitting is performed on experimental data, and activation energy of proton migration is calculated, so that a proton conduction mechanism is deeply discussed; the polyoxometallate prepared by the invention is of a pure inorganic three-dimensional frame structure, is completely composed of metal-oxygen bonds, and has important structural innovation significance; in addition, the polyoxometallate has the advantages of high proton conductivity, simple preparation process, good chemical stability and the like, so that the polyoxometallate becomes a solid proton conduction material with great application potential.

The invention provides a layered Van der Waals material with full-compensation ferrimagnetism and a topological Hall effect as well as a preparation method and application of the layered Van der Waals material. The chemical formula of the material is MnxCrTe2, wherein 0 lt; and x is 1. The material provided by the invention has a wide compensation temperature range, a large magnetoresistance effect, anisotropy and a topological Hall effect, is a CrTe2 intercalation ferromagnetic material doped in different proportions, and can realize optimization and continuous adjustability of performances such as magnetism, Curie temperature and Hall parameters of the material through regulation and control of mechanisms such as the doping proportion, the temperature and the magnetic field; and a material basis is provided for researching the application of the Mn intercalation CrTe2 crystal material in the field of magnetic induced storage.

The invention relates to a preparation method of an ammonium ion intercalation two-dimensional material, which comprises the following steps: by taking a two-dimensional material single crystal as a raw material and ammonium iodide as an intercalation agent, putting the two-dimensional material single crystal into an ammonium iodide solution, heating, cooling, cleaning, and drying in vacuum to obtain an ammonium ion intercalation two-dimensional material compound. The preparation method is simple, quick, green, environment-friendly, high in efficiency and low in cost; the prepared ammonium ion intercalation type two-dimensional material has great application prospects in the aspects of energy storage, catalysis, ion exchange and the like.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.

The invention belongs to the technical field of two-dimensional nano materials, and relates to an MXene material as well as a preparation method and application thereof. The invention provides a novel and efficient MXene material preparation method which is characterized in that a precursor MAX phase material, a chalcogenide element simple substance and an iodine simple substance are mixed and then subjected to a high-temperature reaction in a vacuum environment. According to the method, a chalcogenide and iodine are ingeniously utilized to generate iodide (such as SeI2 or TeI2) with strong oxidizing property in situ at a high temperature, the chalcogenide in a high oxidation state can selectively oxidize A-site atoms (such as Al) in an MAX phase, the A-site atoms are converted into volatile iodide (such as AlI3) and escape from a system, and therefore selective stripping of an A layer is achieved; and a two-dimensional Mn + 1Xn skeleton is formed. Meanwhile, the reduced chalcogenide is directly bonded to the surface of MXene as a terminal group, and the functionalized MXene material with the chalcogenide terminal group (-S,-Se or-Te) is synthesized in one step.

The application relates to a preparation method of a ternary alloy nanoflower and an organic hybrid composite film thereof, and belongs to the technical field of nanometer materials and functional films. BiCl3, SbCl3 and TeO2 are dissolved in ethylene glycol, NaOH and PVP K30 are added, stirring is carried out at room temperature until a clear solution is obtained, the solution is transferred to a reaction kettle, and reaction is carried out in a blast drying oven; after cooling, centrifugal washing is carried out; after drying, a Bi-Sb-Te alloy nanoflower is obtained; the Bi-Sb-Te alloy nanoflower is mixed with a PEDOT:PSS aqueous solution; a conductive enhancer is added, ultrasonic dispersion is carried out to form a uniform slurry; the slurry is deposited on the surface of a glass substrate by using a drying machine through a flow casting method; after annealing, the film is peeled off, vacuum drying is carried out, and a flexible thermoelectric composite film is formed. Through the establishment of a trinity technology of "nanoflower morphology design-in-situ interface optimization-low temperature solution process", the problems of poor flexibility of traditional thermoelectric materials, nanocomposite interface failure and unsustainable high-temperature process are solved.

The invention relates to the technical field of thermoelectric materials, in particular to a Bi2SeS2-based thermoelectric material and a preparation method and application thereof, the Bi2SeS2-based thermoelectric material takes Bi2SeS2 as a matrix, and the matrix is doped with a copper element and silicon carbide as a nano composite phase. According to the invention, the electric transport performance and the heat transport performance of the material are synchronously optimized through a synergistic strategy of Cu doping and SiC nano-compounding; cu doping effectively improves the carrier concentration and conductivity, SiC nano-compounding introduces a large number of nano-interfaces, the SiC nano-compounding and the point defects generated by Cu doping jointly construct a point defect-nano-interface multi-scale phonon scattering mechanism, and the lattice thermal conductivity is remarkably reduced. Moreover, the process for preparing the Bi2SeS2-based thermoelectric material is simple, the cost is low, the thermoelectricity of the Bi2SeS3 material at 773 K is successfully improved to 0.83, and a reliable way is provided for industrial application of the Bi2SeS2-based thermoelectric material.

The invention relates to a mercury-containing acid mud efficient recovery method and device based on difference frequency resonance coupling. The high-efficiency mercury-containing acid mud recovery method based on difference frequency resonance coupling comprises the following steps: step 1, acid mud pretreatment: crushing, screening and drying mercury-containing acid mud; 2, coupled field leaching is conducted, specifically, a product in the step 1 is conveyed into a reaction kettle, stirring is conducted after an oxidizing agent is added, an acid mud turbid liquid is obtained, an oxidation-reduction reaction is conducted through catalysis of a difference frequency resonance coupled field formed by two frequency-adjustable ultrasonic waves, and the difference frequency adjusting range delta f is 6-10 kHz; step 3, carrying out solid-liquid separation; leaching liquid containing mercury and selenium is obtained. According to the scheme provided by the invention, the standing wave effect can be formed through the difference frequency, and the crushing efficiency of the cavitation bubbles is improved, so that the oxidation reaction speed of the mercury-containing acid mud turbid liquid is improved; secondly, through the adjustable frequency, the situation that the ultrasonic frequency is not matched with the mercury ion concentration and the turbid liquid temperature, and consequently ultrasonic energy waste is caused is avoided.

This solid electrolyte has: a first crystallite which is formed into a primary particle and has a first crystal structure; a second crystallite which is formed into the same primary particle as the first crystallite and has a second crystal structure that is different from the first crystal structure; and an amorphous phase. The first crystallite and the second crystallite each contain lithium, the first crystal structure is a hexagonal crystal structure, the second crystal structure is an orthorhombic crystal structure, and the crystallite size of the first crystallite and the crystallite size of the second crystallite are both 50 nm or less.

This invention relates to the field of crystal material preparation technology, specifically to a ternary layered selenide Ge 0.85 Bi 2.15+x Se4 semiconductor material and its preparation method. The preparation method includes the following steps: according to the chemical formula Ge... 0.85 Bi 2.15+x The molar ratio of germanium powder, bismuth powder, and selenium powder in Se4 is weighed, where 0 ≤ x ≤ 0.06. The weighed raw materials are mixed evenly and placed in a quartz tube. The quartz tube is then sealed under vacuum. The vacuum-sealed quartz tube is placed in a heating furnace and heated from room temperature to 900-950℃, held at this temperature for 12-24 hours. After the holding period, the quartz tube is removed from the heating furnace and quenched. The quenched and cooled quartz tube is then placed back in the heating furnace and heated from room temperature to 540-560℃, held at this temperature for 3-5 days for annealing, thus obtaining the ternary layered selenide Ge. 0.85 Bi 2.15+x Se4 semiconductor material. This invention successfully solves the technical problem of obtaining a single phase in the GeBi2Se4 system by precisely controlling the Ge / Bi ratio and employing high-temperature quenching and low-temperature long-time annealing processes.

The invention discloses an n-type lead selenide-based thermoelectric material and a preparation method and application thereof, and belongs to the technical field of energy material preparation. The chemical formula of the n-type lead selenide-based thermoelectric material is Pb < 1-x > CrxSe < 0.998 > Cl < 0.002 > (x is more than or equal to 0.002 and less than or equal to 0.006); according to the material, high-purity raw materials are mixed according to the molar ratio in the chemical formula, and the target lead selenide-based thermoelectric material is prepared by combining a high-temperature smelting method with a discharge plasma sintering method. Through double doping of Cr and Cl elements, the conductivity of the n-type lead selenide-based thermoelectric material is greatly improved and the thermal conductivity of the n-type lead selenide-based thermoelectric material is reduced through the synergistic effect of the Cr and Cl elements, the prepared Pb0. 996Cr0. 04Se0. 998Cl0. 002 material has a high thermoelectric figure of merit at the high temperature of 723 K, and the average thermoelectric figure of merit at the medium and low temperature of 300-673 K reaches 1.037. The thermoelectric figure of merit of the n-type lead selenide-based thermoelectric material can be greatly improved, the conversion efficiency of a thermoelectric power generation device can be improved, and the industrial application of the thermoelectric power generation device can be expanded.

The invention provides a positive electrode precursor material and a preparation method and application thereof, the positive electrode precursor material has a chemical composition as shown in a formula 1, and in an X-ray diffraction pattern, the positive electrode precursor material has a (311) peak with 2theta of 36.5-37.0 degrees, a (220) peak with 2theta of 31.0-31.5 degrees, a (511) peak with 2theta of 59.1-59.6 degrees and a (440) peak with 2theta of 65.0-65.5 degrees; wherein the ratio of the peak intensity of the (311) peak to the peak intensity of the (220) peak is greater than 2. As a tellurium-doped lithium cobalt oxide material with a special crystal phase structure, the positive electrode precursor material is beneficial to improving the structural stability and gram volume of a positive electrode active material.

This invention discloses a method for oxidative leaching of selenium and mercury from copper smelting acid sludge, belonging to the field of solid waste comprehensive utilization technology. The leaching system in the oxidative leaching is a ternary synergistic oxidative leaching system of "sulfuric acid-sodium chloride-oxidant". Under the action of the synergistic leaching system, efficient and selective leaching of selenium and mercury from copper smelting acid sludge is achieved. This method avoids the corrosion of equipment by volatile acids and the problem of excessive oxidation of the nitric acid system, and significantly improves the stability of the oxidation process and the efficiency of reagent utilization, ultimately achieving multiple goals such as efficient recovery of valuable metals, low-carbon and energy-saving process flow, and compliant and harmless treatment of hazardous waste.

This application discloses an antimony-containing phosphorus-free sulfide solid electrolyte, its preparation method, and its applications. The antimony-containing phosphorus-free sulfide solid electrolyte of this application is based on Li6SbS5I electrolyte. It achieves this by synergistic substitution of Sb with tetravalent Sn and Si cations in a certain proportion, while simultaneously synergistic substitution of S with O, Se, and Te in a certain proportion with increasing ionic radii. This effectively maintains the crystal structure of the electrolyte, resulting in high ionic conductivity and excellent air stability.

The invention discloses a high-stability large-window all-optical phase change brain-like computing material and device. The device structurally comprises a substrate, an optical waveguide layer, a dielectric layer, a phase change layer and a top anti-oxidation layer in sequence from bottom to top, the device phase change layer is made of germanium-enriched germanium-antimony-tellurium phase change materials, the chemical formula is GexSbyTez, x is larger than or equal to 25 and smaller than or equal to 50, y is larger than or equal to 15 and smaller than or equal to 25, and z is larger than or equal to 30 and smaller than or equal to 50. The phase change material has the advantages of high crystallization temperature, good amorphous thermal stability, large optical property difference between amorphous phases and crystalline phases, large switching ratio of the device, and excellent cycle stability.

The present application relates to the technical field of cold storage. Specifically disclosed are a cold storage material, and a preparation method therefor and the use thereof. The cold storage material comprises a Gd2O2Se crystal. The cold storage material in the present application comprises the Gd2O2Se crystal, and the Gd2O2Se crystal has a phase transformation near 6.22 K, a relatively large specific heat in a temperature range of 1-10 K, and an obvious magnetothermal effect and can be used as a cold storage material at a liquid helium temperature.

The application provides a method for capturing gold in lead anode slime by antimony reinforced bismuth, and belongs to the technical field of resource comprehensive utilization; on the basis of capturing gold and silver by lead bismuth, antimony is added to reinforce the effect of capturing gold by bismuth; through theoretical calculation, antimony atoms doped on the surface of bismuth can enhance the adsorption strength of gold atoms, and reinforce the effect of capturing gold by bismuth; therefore, the application develops a method for mixing lead anode slime, crude lead and crude antimony according to a certain proportion to obtain noble lead through reduction smelting, obtaining gold and silver alloy through oxidation and impurity removal of the noble lead, obtaining crude silver and crude gold through vacuum distillation of the gold and silver alloy, and obtaining high-purity silver and gold through electrolysis of the crude silver and the crude gold; compared with the method without adding crude antimony, the recovery rate of silver and gold is improved; by increasing the content of antimony in the noble lead, reducing the loss of gold in the reduction smelting process, and cooperatively smelting crude bismuth and crude antimony, the recovery rate of bismuth and antimony is improved, and efficient recovery and utilization of rare and precious metals in lead anode slime is realized.

The invention discloses a high-entropy sulfur selenide negative electrode material, a preparation method thereof and application of the high-entropy sulfur selenide negative electrode material in a sodium-ion battery. The multi-element sulfur selenide negative electrode material with the high-entropy effect is synthesized in one step through a solvothermal method, and the chemical formula of the high-entropy negative electrode material is Mo < x > Sn < y > Sb Bi Co < c > S < d > S < e, 0 lt >, x is less than or equal to 1, 0lt; y is less than or equal to 0.05, 0lt; a is less than or equal to 0.05, 0lt; b is less than or equal to 0.05, 0lt; c is less than or equal to 0.05, 0lt; d < = 1, 0.05 < = e < = 0.15. The preparation method is relatively simple and convenient in process, good in controllability and capable of effectively promoting uniform mixing and reaction of various metal elements. Due to the unique high-entropy structure and sulfur-selenium composite anions, the obtained material shows excellent structural stability in the charge-discharge cycle process of a secondary battery (such as a sodium ion battery and a lithium ion battery), and is obviously superior to a corresponding binary or quaternary material, so that the material has long cycle life, high capacity retention ratio and stable comprehensive electrochemical performance.

This invention relates to a method for preparing and applying a copper selenide@platinum composite material. H₂SeO₃ and polyvinylpyrrolidone (PVP) are dissolved in deionized water, stirred, and then hydrazine hydrate solution is added. After stirring at room temperature, the precipitate is washed and dispersed in water to obtain a selenium nanosphere dispersion. The selenium nanosphere dispersion is mixed with PVP solution, K₂PtCl₄ solution, and anhydrous ethanol, and stirred at 50–70°C. After centrifugation and washing, the precipitate is dispersed in water to obtain a selenium@platinum nanoparticle dispersion. The selenium@platinum nanoparticle dispersion is mixed with PVP solution, copper salt solution, and ascorbic acid solution, stirred, and then H₂O₂ solution is added. After stirring and reacting, the precipitate is centrifuged and washed to obtain the copper selenide@platinum composite material. Copper selenide, as a photothermal material, has excellent photothermal conversion performance and can achieve photothermal therapy for tumors. The platinum nanoparticles grown on its surface have a radiosensitizing effect, which can further enhance the effect of radiotherapy. The copper selenide@platinum composite material prepared in this invention enables combined RT / PTT therapy for tumors.

The present invention relates to a non-stoichiometric Ni0 .85Se / NaCI composite nanomaterial obtained from a nickel selenide and sodium chloride, useful as a multifunctional electrocatalyst and / or photocatalyst for the evolution of hydrogen and oxygen from water, and / or for urea oxidation, and which can also act as a mediator in the oxygen evolution reaction, and the simultaneous purification of aqueous solutions contaminated by organic pollutants. The invention also relates to the method for obtaining said composite nanomaterial, together with the use thereof for obtaining a multifunctional electrode for the evolution of hydrogen and oxygen from water, and / or for urea oxidation. The invention also relates to a multifunctional electrode comprising the non- stoichiometric Ni0 . 85Se / NaCI composite nanomaterial of the invention.

The application provides a piezoelectric-photocatalytic synergic composite fiber for roads and a preparation method thereof, and belongs to the technical field of road engineering. 0.6 Mg 0.2 NbO3 and nitrogen-doped graphene to obtain a mixed solution, and obtains a core layer spinning solution after ultrasonic dispersion, adds Pr 0.5 Bi 0.5 FeO3 / Bi2O2Se composite material into an organic solvent to obtain a shell layer spinning solution; S2, the shell layer spinning solution and the core layer spinning solution are respectively placed into corresponding positions of a coaxial electrospinning device to perform coaxial electrospinning, and a composite fiber is collected; S3, the composite fiber is subjected to heat pressing treatment, and then is subjected to surface modification of a silane coupling agent to obtain the piezoelectric-photocatalytic synergic composite fiber. 0.6 Mg 0.2 NbO3, Pr 0.5 Bi 0.5 FeO3 / Bi2O2Se composite material. The application realizes the purposes of improving road mechanics and anti-skid performance and degrading automobile exhaust.

The invention relates to the technical field of thermoelectric materials, in particular to a preparation method of a CuInSe2 thermoelectric material. According to the technical scheme, the method comprises the following steps: weighing and mixing a Cu elementary substance, an In elementary substance and a Se elementary substance according to a molar ratio of 1: 1: 2, and putting the mixture into a first quartz tube; placing the first quartz tube in a second quartz tube, vacuumizing and sealing the tube; and placing the sealed second quartz tube in a tubular furnace for high-temperature sintering to obtain the CuInSe2 material. According to the preparation method of the CuInSe2 thermoelectric material, the process is stable, operation is easy and convenient, repeatability is good, the block material with high purity, high density, excellent mechanical performance and excellent thermoelectric performance is successfully prepared, many defects in the prior art are overcome, and the preparation method is suitable for industrial production. The method has great production practice significance and good market application prospects.

This invention discloses a selenite crystal and its preparation method. X-ray powder diffraction of the selenite crystal, measured using Cu-Kα radiation, yielded diffraction angles (expressed as 2θ) of 17.7°±0.2°, 19.5°±0.2°, 20.0°±0.2°, 22.9°±0.2°, 24.5°±0.2°, 24.9°±0.2°, 26.2°±0.2°, 29.8°±0.2°, 30.2°±0.2°, 31.4°±0.2°, and 33°. Characteristic peaks are observed at 0°±0.2°, 34.3°±0.2°, 35.8°±0.2°, 36.6°±0.2°, 37.4°±0.2°, 37.5°±0.2°, and 38.4°±0.2°. A characteristic endothermic peak is observed at 73.4℃ in the differential scanning calorimetry (DSC) spectrum of the crystal. This invention features a simple preparation route, mild reaction conditions, convenient operation, low cost, and good process reproducibility. The prepared selenite has a stable crystal form, making it suitable for large-scale industrial production of pharmaceutical raw materials.

The invention relates to a method for preparing an AgBiSe2 low-temperature sensitive material by a solid-phase reaction method, which is characterized in that a single and stable cubic-phase AgBiSe2 block material can be obtained by combining normal-pressure sintering with a liquid nitrogen cold quenching process through ball-milling mixing, vacuum tube sealing high-temperature sintering, rapid cold quenching and secondary densification treatment. The method does not need expensive equipment such as discharge plasma sintering and the like, does not need long-time multi-step heat treatment, and is simple and convenient in process, low in cost and good in repeatability. The obtained material shows a clear negative temperature coefficient characteristic in a 10-300 K interval, is suitable for the extremely low temperature fields of deep space exploration, quantum calculation, liquid helium temperature zone temperature measurement and the like, can also be expanded to the direction of functional materials of infrared detectors, solar cells, thermoelectric devices and the like, and has good application prospects and industrialization values. And potential temperature-sensitive application value is realized in an extremely-low-temperature region. The problems of complex process, expensive equipment, easy formation of multiple phases in the cooling process, poor cubic phase stability and the like in the existing solid phase method for preparing AgBiSe2 are solved.

The invention discloses a manganese-doped wide-band-gap colloidal quantum dot and TiO2 heterojunction photoelectrode and preparation and application thereof, and belongs to the technical field of semiconductor photoelectric materials and devices. According to the photoelectrode, conductive glass serves as a substrate, a TiO2 barrier layer, a TiO2 transparent layer, a scattering layer, a Mn-doped wide-band-gap colloid quantum dot layer and a surface passivation layer are sequentially constructed, and the barrier layer inhibits charge recombination; the transparent layer and the scattering layer synergistically enhance light absorption; the quantum dot layer can broaden spectral response, remarkably prolong the service life of current carriers and promote effective separation of photo-generated excitons; the passivation layer is used for reducing the light corrosion influence; the preparation method comprises the steps of TiO2 multilayer photoelectrode preparation, quantum dot synthesis and electrophoretic deposition and passivation treatment. The photoelectrode has excellent performance in hydrogen production by photoelectrochemical decomposition of water, and the system does not contain heavy metals; compared with an undoped system, the saturation photocurrent density and the hydrogen production rate are remarkably improved, the electron life is prolonged, and a reliable technical path is provided for large-scale preparation and application in the hydrogen production field.

The invention belongs to the technical field of metallurgy, and discloses a method for comprehensively recycling acid-making electrospray slag. The method comprises the following steps: S1, slurrying: mixing and slurrying the electric mist slag, mercury-containing crude selenium and concentrated sulfuric acid to obtain a slurried material; s2, primary acidification roasting: feeding the pulpified material into a roasting furnace for roasting at the roasting temperature of 220-320 DEG C for 20-60 hours, and in the roasting process, the negative pressure in the furnace is 0-50 Pa; primary roasting slag is obtained; settling roasting flue gas to recover selenium dioxide; s3, secondary roasting is conducted, specifically, primary roasting slag is roasted again, the roasting temperature is 340-440 DEG C, the roasting time is 3-10 h, and the negative pressure in the furnace is-50--200 Pa in the roasting process; secondary roasting slag is obtained; and recovering mercury-containing crude selenium from roasting flue gas. By means of the method, effective separation and efficient recovery of selenium and mercury are achieved, and valuable metals such as selenium, mercury, lead, gold and silver are recovered in an echelon mode.

The invention relates to a compound selenium-silicon-mercury-cesium and a selenium-silicon-mercury-cesium infrared nonlinear optical crystal as well as a preparation method and application thereof. The molecular formula of the compound is Cs2HgSi3Se8, the molecular weight is 1182.36, the molecular formula of the crystal is Cs2HgSi3Se8, the molecular weight is 1182.36, the crystal is crystallized in an orthorhombic crystal system, the space group is P212121, and the cell parameters are as follows: a = 7.6202 (10), b = 12.7926 (19), c = 17.517 (2), alpha = beta = gamma = 90 degrees, Z = 4 and the volume is 1707.6 (4) 3. The crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method or a Bridgman-Stockbarger method, is of a non-centrosymmetric structure, and has the advantages of maximum band gap, moderate non-linear optical effect, wide light-transmitting wave band, higher hardness, good mechanical property, difficulty in fragmentation and deliquescence and easiness in processing and storage in all Hg-based selenide reported at present; the method can be used for manufacturing infrared nonlinear optical devices. The method has important application in the fields of infrared photoelectric countermeasure, spectrum technology, laser communication, remote sensing distance measurement and the like.