93results about "Rare earth metal sulfides" patented technology

A method of preparing metal chalcogenides from elemental metal or metal compounds has the following steps: providing at least one elemental metal or metal compound; providing at least one element from periodic table groups 13-15; providing at least one chalcogen; and combining and heating the chalcogen, the group 13-15 element and the metal at sufficient time and temperature to form a metal chalcogenide. A method of functionalizing the surface of semiconducting nanoparticles has the following steps: providing at least one metad compound; providing one chalcogenide having a cation selected from the group 13-15 (B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb and Bi); dissolving the chalcogenide in a first solution; dissolving the metal compound in a second solution; providing and dissolving a functional capping agent in at least one of the solutions of the metal compounds and chalcogenide; combining all solutions; and maintaining the combined solution at a proper temperature for an appropriate time.

Monodisperse particles having: a single pure crystalline phase of a rare earth-containing lattice, a uniform three-dimensional size, and a uniform polyhedral morphology are disclosed. Due to their uniform size and shape, the monodisperse particles self assemble into superlattices. The particles may be luminescent particles such as down-converting phosphor particles and up-converting phosphors. The monodisperse particles of the invention have a rare earth-containing lattice which in one embodiment may be an yttrium-containing lattice or in another may be a lanthanide-containing lattice. The monodisperse particles may have different optical properties based on their composition, their size, and / or their morphology (or shape). Also disclosed is a combination of at least two types of monodisperse particles, where each type is a plurality of monodisperse particles having a single pure crystalline phase of a rare earth-containing lattice, a uniform three-dimensional size, and a uniform polyhedral morphology; and where the types of monodisperse particles differ from one another by composition, by size, or by morphology. In a preferred embodiment, the types of monodisperse particles have the same composition but different morphologies. Methods of making and methods of using the monodisperse particles are disclosed.

A process for the production of nanorods containing a rare earth metal is disclosed. The process comprises the steps of: (a) increasing the pH of an aqueous solution of the formula MX3, where M is a trivalent rare earth metal cation and X is a monovalent anion so as to produce a reaction product containing X anions in solution and a precipitate in the form of trivalent rare earth hydroxide nanoparticles of the formula M(OH)3, the nanoparticles having a hexagonal crystal structure; and, (b) ageing the nanoparticles of step (a) in the presence of the reaction product containing X anions in solution so as to cause rod-like anisotropic growth of the nanoparticles and form rare earth hydroxide nanorods.

A rare earth metal oxysulfide represented by a general formula R2O2S (R denotes one kind or two or more kinds of rare earth elements to be selected from a group of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, as wells as Y) is formed into spherical granules. The mean particle size of the granules is 0.05–1 mm and their relative density is 96% or over. The granules are used as a regenerative material at the liquid helium temperature.

There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease.Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 μm and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.