This invention relates to a method for fabricating a
gadolinium oxysulfate X-
ray scintillation screen based on a
silicon microchannel array, as well as the X-
ray scintillation screen and its applications, belonging to the field of X-
ray imaging technology. It primarily addresses the technical problem of
low resolution in existing X-ray
scintillation screens. This invention fabricates a tetragonal
silicon microchannel structure through
photolithography,
photoelectrochemical etching, and back-side
thinning processes, fundamentally avoiding the problem of microchannel misalignment. The use of ALD
tungsten film deposition and
pulse electroplating for
silver film deposition effectively reduces X-ray
crosstalk. Furthermore, the good
chemical compatibility between
tungsten and silver ensures uniform
silver film deposition without microchannel blockage, and the
silver film possesses
high reflectivity. Vacuum infusion is used to completely fill the microchannels with fluorescent material, avoiding the presence of air or other substances with significantly different refractive indices from the fluorescent material within the channels, and also solving the scattering and reflection problems caused by gaps between particles, effectively improving detection efficiency.