The invention relates to the field of
new energy power generation, and discloses a
power semiconductor device and a
power module, and the device comprises a substrate, a heat dissipation structure, and a power
chip. The heat dissipation structure is arranged on the upper surface of the substrate and connected with the substrate, and the power
chip is arranged on the upper surface of the heat dissipation structure and connected with the heat dissipation structure; the heat dissipation structure comprises a sealed frame and
liquid metal, the frame is provided with a cavity, and the cavity is filled with the
liquid metal. The heat dissipation structure is arranged in the
power semiconductor device, the heat dissipation structure comprises the
liquid metal, the liquid
metal can absorb heat in the melting process while the temperature is kept unchanged, and the
heat capacity is equivalent to infinity, so that the overall
heat capacity of the
power semiconductor device is greatly increased, and the heat
time constant is increased; therefore, the heating rate of the power
chip can be suppressed when the power is overloaded, and the overload capacity of the module is improved. Compared with a conventional
phase change material, the heat
conductivity coefficient of the liquid
metal is large, the
phase change melting rate can be increased, and meanwhile the influence on the steady-state
thermal resistance of the power chip is small.