70 results about "Resistive type" patented technology

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention belongs to insulation of superconducting power equipment, and particularly relates to a breakdown voltage prediction method for a liquid nitrogen, insulation barrier and bubble composite system. Comprising the following steps: acquiring electric field distribution characteristic parameters of the resistance type superconducting current limiter through simulation, and designing an equivalent electrode structure capable of reproducing electric field characteristics in a liquid nitrogen environment; establishing a first breakdown voltage prediction model taking the insulation barrier position parameters and the electrode spacing as variables; calculating the surface heat flux of the superconducting strip in the quench fault state; and introducing a bubble influence factor for correction to obtain a second breakdown voltage prediction model. A complex actual insulation system prediction problem is converted into an equivalent model problem which can be verified in a laboratory. And an accurate basis is provided for the insulation design of the resistance-type superconducting current limiter.

The invention discloses a resistive flexible temperature sensor device and a preparation method thereof, and the method comprises the steps: dispersing graphene conductive ink in a homogenizer at a rotating speed of not less than 1000 r / min to obtain uniformly dispersed graphene conductive ink; copper welding spots are arranged at the two ends of the flexible substrate, the flexible substrate is placed on an operation platform, the operation platform is placed on a silk-screen printing table, graphene conductive ink is evenly coated on the silk-screen printing table for printing, and the obtained flexible substrate with the graphene temperature-sensitive film is placed on a constant-temperature heating table at the temperature of 90-160 DEG C to be dried for 40 min to 2 h; a wire connected with a processor is welded at the copper welding point, and the processor is used for obtaining a temperature value according to the collected voltage value. According to the invention, the wearing comfort is good, and good temperature sensing characteristics and high response speed can be shown in a human body temperature range.

An endoscopic medical instrument comprises a host and an assembly, the assembly is detachably mounted on the host, the host comprises an identification circuit, the assembly comprises an identity confirmation structure, and the identity confirmation structure comprises the following three types: a resistance type, a chip type or a resistance chip type; and the identification circuit can identify the resistance values of the chip and the identification resistor so as to judge the type of the identity confirmation mechanism. The endoscope medical instrument can be compatible with different types of components, the types of the components can be quickly identified, corresponding programs can be executed, and the working efficiency of doctors can be improved.

The invention provides a resistance type whisker sensor, an electronic skin and a preparation method thereof, the resistance type whisker sensor comprises a substrate layer, a liquid metal-carbon nanotube sensitive material layer and a packaging layer, the liquid metal-carbon nanotube sensitive material layer is packaged between the substrate layer and the packaging layer, the liquid metal-carbon nano tube sensitive material forms a conductive network, the conductive network is composed of liquid metal particles and carbon nano tubes generated by laser ablation, and the liquid metal particles are connected through the carbon nano tubes. In the nature, many organisms realize high-precision tactile detection by virtue of tentacles, for example, beards of animals such as cats and rats can sense tiny changes of the surrounding environment and recognize the shape, texture and vibration information of objects, and the high-sensitivity tactile sensing capability plays an important role in survival and environmental adaptation of the animals. The invention provides the high-sensitivity electronic whisker, and provides the electronic skin based on the whisker sensor array.

The invention discloses a resistance-type high-temperature superconducting current limiter simulation model building method, which is used for carrying out analogue simulation on a resistance-type superconducting current limiter made of YBCO (Yttrium Barium Copper Oxide) superconducting tape, and comprises the following steps: S1, building an electrical model module of the resistance-type superconducting current limiter; s2, building a thermodynamic model module of the resistance type superconducting current limiter; s3, carrying out iterative circulation on the electrical model module and the thermodynamic model module; and S4, packaging the electrical model module, the thermodynamic model module and the oscilloscope reading module to obtain a resistance-type superconducting current limiter simulation model so as to access a power grid model. According to the invention, analogue simulation of the resistance-type high-temperature superconducting current limiter can be realized, and the resistance-type high-temperature superconducting current limiter can be connected into a simulation power grid for testing.

The invention belongs to the technical field of sensors, and relates to a low-power-consumption thin-film resistance type hydrogen sensor and a preparation method thereof. The hydrogen sensor comprises a nano array hydrogen sensor, a resistor and a storage capacitor, the branch where the nano array hydrogen sensor is located is connected in parallel with the branch where the storage capacitor is located; a branch where the nano array hydrogen sensor is located is provided with a resistor in series; and a branch where the nano array hydrogen sensor is located and a branch where the storage capacitor is located are powered by a power supply. When the nano-array hydrogen sensor is excited by hydrogen, the nano-array hydrogen sensor is subjected to electrochemical reaction to become a conductor, and a storage capacitor is used as a power supply, so that low-power-consumption work of the nano-array hydrogen sensor is realized; by controlling the working voltage within the set range, it can be ensured that the capacitor can rapidly reach a stable state in each charging and discharging process, so that the response speed and efficiency of the whole circuit are improved, and the resistance value obtained through bridge measurement is more accurate and stable.

The invention discloses an optimal configuration method for a resistance-type superconducting current limiter in a distributed power supply access scene. The method comprises the following steps: S1, carrying out site selection on a resistance-type superconducting current limiter mounting branch; s2, establishing a target function F1 by taking the lowest cost of the resistance type superconducting current limiter as a target; s3, establishing a target function F2 by taking the optimal matching degree of the resistance type superconducting current limiter and current protection as a target; s4, normalizing the objective functions of the F1 and the F2, and constructing a single objective function; s5, establishing constraint conditions of the optimization configuration model of the resistance type superconducting current limiter; and S6, solving the configuration model to obtain an optimal configuration scheme. According to the method, the possible access positions of the RSFCL are screened through sensitivity analysis, then the length, the installation positions and the installation number of the superconducting tape of the RSFCL are taken as decision variables, the cost of the current limiter and the cooperation degree with protection are comprehensively considered, a 10kV distribution network optimal configuration model of the RSFCL in a DG access scene is established, and an optimal configuration scheme of the RSFCL is obtained through solving.

The invention provides an ultra-low-frequency noise resistance-free band-gap reference power supply, which is applied to the technical field of band-gap reference power supplies, in the band-gap reference power supply, BJTs with different emitter junction areas are firstly utilized, when collectors work under equal current bias and work at different current densities, a BE junction voltage difference can be generated between two transistors, and the BE junction voltage difference can be generated between the two transistors; then, the BE junction voltage difference does not need to act on a resistor to avoid low-frequency 1 / f noise and thermal noise introduced into the resistor, that is, the BE junction voltage difference is used for lifting the potential where the base-emitter voltage of the transistor is located so as to obtain band-gap reference voltage, and finally the band-gap reference voltage can be obtained by utilizing the characteristic that the base-emitter voltage of the transistor is a negative temperature coefficient. By combining the characteristic that the BE junction voltage difference is a positive temperature coefficient, a new circuit architecture with the positive temperature coefficient and the negative temperature coefficient overlapped to achieve the compensation effect is jointly formed, and therefore the band-gap reference voltage source with the zero temperature coefficient can be obtained only by selecting proper circuit parameters.

The utility model discloses an intelligent joint control device, which comprises an environmental parameter acquisition circuit, a microcontroller, an alarm analysis circuit and an alarm control circuit, the microcontroller is connected between the environmental parameter acquisition circuit and the alarm analysis circuit, and the alarm control circuit is connected with the alarm analysis circuit. The environment parameter acquisition circuit comprises a voltage source, a comparison circuit, a resistance type sensor, an amplification circuit and an analog-to-digital conversion circuit. The comparison circuit is connected with the resistance-type sensor and the voltage source, and maps the resistance value of the resistance-type sensor into the product of the corresponding proportionality coefficient and the power supply voltage of the voltage source; the amplification circuit is connected with the comparison circuit and the analog-to-digital conversion circuit and amplifies the output voltage of the comparison circuit; the analog-to-digital conversion circuit is connected with the voltage source and the amplifying circuit and converts the ratio of the output voltage of the amplifying circuit to the power supply voltage of the voltage source into a digital value; the microcontroller maps the digital value to a physical value. The scheme improves the precision, reduces the cost and simplifies the circuit.

The invention discloses an input load compensation circuit, a digital-to-analog converter and a method for an R-2R resistive DAC (Digital-to-Analog Converter), and aims to solve the problem of unstable reference voltage caused by the change of an input load along with an input code. The circuit comprises a trend compensation branch and an adjacent code compensation branch which are both connected between a first reference voltage and a second reference voltage. The trend compensation branch controls a first resistance network through a thermometer decoder and generates a first compensation current used for compensating the overall change trend of the current. And the adjacent code compensation branch controls the second resistance network through the XOR gate circuit to generate a second compensation current for compensating the current difference between adjacent code words. Through a dual compensation mechanism, the total current on the reference voltage is effectively stabilized, and the linearity and the dynamic performance of the DAC are remarkably improved.

Provided is a product sum calculator which consumes little energy and has high calculation accuracy. A product sum arithmetic unit (1) is configured from: a resistive digital-to-analog conversion unit (11) that is provided with a plurality of RDACs and that converts digital values of each element of an input vector into analog voltages and outputs the analog voltages; a capacitive digital-to-analog conversion unit (12), which is provided with a plurality of CDACs, to which the analog voltage output from the resistive digital-to-analog conversion unit (11) is inputted, and which sets a capacitance ratio corresponding to the digital value of each element of the matrix between input and output terminals and between the output terminal and ground; a successive approximation-type analog-to-digital conversion unit (13) provided with a plurality of successive approximation-type ADCs for converting the voltage of a node commonly connected to each output terminal of the capacitive digital-to-analog conversion unit (12) into a digital value and outputting the digital value; and a consumption current control unit (14) for controlling the consumption current of the resistive digital-to-analog conversion unit (11), the output from the successive comparison analog-to-digital conversion unit (13) being an output vector.

The invention discloses an optimal configuration method for a resistance type superconducting current limiter in a closed-loop transfer scene. The method comprises the following steps: S1, simplifying and setting relay protection in a 10kv cable network; s2, calculating an impact current caused by loop closing transfer; s3, determining the access position of the resistance-type superconducting current limiter in the closed-loop transfer scene; s4, establishing a target function F1 by taking the lowest cost of the resistance type superconducting current limiter as a target; s5, establishing a target function F2 by taking the optimal matching degree of the resistance type superconducting current limiter and current protection as a target; s6, normalizing the objective functions of the F1 and the F2, and constructing a single objective function; s7, establishing constraint conditions of the optimization configuration model of the resistance type superconducting current limiter; and S8, solving the optimization configuration model of the resistance type superconducting current limiter to obtain an optimization configuration scheme of the resistance type superconducting current limiter. According to the method, the optimal configuration of the SFCL in the 10kV distribution network in the closed-loop transfer scene can be realized, and the current limiting ratio at the closed-loop point reaches a relatively high value, so that the reliable action of protection is ensured.

A memory array includes hybrid memory cells, wherein each hybrid memory cell includes a transistor-type memory including a memory film extending on a gate electrode; a channel layer extending on the memory film; a first source / drain electrode extending on the channel layer; and a second source / drain electrode extending along the channel layer; and a resistive-type memory including a resistive memory layer, wherein the resistive memory layer extends between the second source / drain electrode and the channel layer.

The utility model discloses a kind of high-efficiency heat dissipation resistance bimetallic strip, it is related to bimetallic strip technical field, including upper metal sheet, the bottom of the upper metal sheet is equipped with lower metal sheet, and the inside of the upper metal sheet and lower metal sheet is equipped with inner metal sheet, the side of the upper metal sheet is equipped with connecting plate, the inside of the connecting plate is fixedly connected with connecting column, the inside of the connecting column is threadedly connected with fixed bolt one, the side of the inner metal sheet is fixedly connected with heat-conducting sheet, the utility model is equipped with inner metal sheet inside the upper metal sheet and lower metal sheet, inner metal sheet inside fixedly connected heat-conducting sheet can absorb the heat on inner metal sheet, upper metal sheet and lower metal sheet inside the arc-shaped groove inside and heat-conducting sheet are clamped, the copper sheet of arc-shaped groove inside is in contact with heat-conducting sheet, heat is quickly discharged by radiating bump one and radiating bump two, improve the heat dissipation of resistance bimetallic strip.

The invention discloses a preparation method and application of a flexible wearable wireless data glove. The invention belongs to the technical field of printing electronics. The invention aims to solve the technical problem that the conventional wireless data glove is not light and not easy to fit. The method comprises the following steps: preparing three kinds of liquid metal ink with different polymeric dispersant contents; the three kinds of liquid metal ink are printed on a flexible substrate, then pulsed light sintering is conducted, and a bending sensor, a pressure sensor and a transmission circuit are obtained; and packaging is carried out by adopting a flexible material after assembly. Liquid metal ink with different polymeric dispersant contents is printed and then subjected to light sintering to serve as a circuit, a bending sensor and a pressure sensor, the prepared glove can distinguish the types of the sensors by obtaining basic resistance, then the resistance change rate is calculated based on the principle of a resistance type sensor, then the actual situation is fitted, and the accuracy of the glove is improved. Wanted data is obtained or simulation of actions is completed in VR.

This invention discloses a resistance testing method, relating to the technical field of intelligent testing, comprising the following steps: Step S100, testing a resistor of any type, independently analyzing the test results to obtain its own characteristics; Step S200, performing forward and reverse tests on the resistor under test according to the testing method, obtaining positive and negative results; Step S300, classifying the resistor under test into grades based on the positive and negative results and its own characteristics. This invention improves the scientific nature of subsequent analysis and the rationality of test parameters by screening effective historical data, avoiding irreversible damage to the resistor, and improving the economy of testing. By taking the average value of forward and reverse tests and analyzing the difference, it eliminates unidirectional systematic errors such as contact resistance, lead resistance, and thermoelectric potential.

The application discloses a resistance type airflow sensor, comprising: a front shell; a rear shell clamped at the rear end of the front shell; and a sensing element packaged between the front shell and the rear shell, wherein the sensing element comprises a hard plate base material and a sensing chip, the hard plate base material is fixedly installed with the front shell, the sensing chip is fixedly installed with the rear shell, one side of the hard plate base material is provided with a sensitive membrane, and the sensing chip is connected with the sensitive membrane through a wire harness. The protective plate is arranged on the front shell and the rear shell, the fan-shaped rubber pieces on the inner wall of the protective plate are mutually adsorbed and closed through rubber magnetic strips in the absence of airflow, a barrier is formed, and particulate matters and condensate in the airflow are effectively blocked from directly contacting the sensitive membrane; when the airflow passes, the airflow pressure pushes away the rubber pieces, allows the airflow to pass, but blocks most of the pollutants, thereby protecting the sensitive membrane from being polluted, ensuring long-term stability and accuracy of the sensor; meanwhile, the protective plate is connected with the groove through a threaded ring, is convenient to disassemble and clean, and maintenance convenience is improved.

The present invention belongs to the field of sensor technology and relates to a low-power thin-film resistor-type hydrogen sensor and a method for preparing the same. The hydrogen sensor comprises a nanoarray hydrogen sensor, a resistor, and a storage capacitor; the branch where the nanoarray hydrogen sensor is located is connected in parallel with the branch where the storage capacitor is located; the branch where the nanoarray hydrogen sensor is located is provided with a resistor in series; and the branch where the nanoarray hydrogen sensor is located and the branch where the storage capacitor is located are powered by a power supply. The present invention utilizes the nanoarray hydrogen sensor to undergo an electrochemical reaction when excited by hydrogen, turning the nanoarray hydrogen sensor into a conductor, and utilizes the storage capacitor as a power supply to achieve low-power operation of the nanoarray hydrogen sensor. By controlling the operating voltage within a set range, it can ensure that the capacitor can quickly reach a stable state during each charge and discharge process, thereby improving the response speed and efficiency of the entire circuit, and the resistance value obtained by bridge measurement is more accurate and stable.

The application discloses a GaN-based hysteresis comparison circuit and relates to the field of semiconductor circuits.The circuit comprises a comparator circuit, a feedback circuit and a current mirror circuit which are connected with each other.The comparator circuit comprises a first N-type GaN device, a second N-type GaN device, a third N-type GaN device, a fourth N-type GaN device and a fifth N-type GaN device.The feedback circuit comprises a sixth N-type GaN device, a seventh N-type GaN device and an eighth N-type GaN device.The feedback circuit is composed of N-type GaN-based active devices instead of resistance passive devices, and the output signal is fed back to the gate of the seventh N-type GaN device, so that the circuit gain is improved, and the signal conversion time is reduced.

The invention discloses a SysML-based resistance-type superconducting current limiter design method and device. The method comprises the following steps: S1, obtaining design requirements of a resistance-type superconducting current limiter and carrying out requirement analysis; s2, analyzing a function logic architecture of the resistance type superconducting current limiter according to design requirements; s3, converting to obtain a physical architecture of the resistance type superconducting current limiter through design parameters and a functional logic architecture; and S4, outputting and obtaining a design result of the resistance type superconducting current limiter through a physical architecture and a set thermoelectric analogy algorithm. According to the method, the technical problems that in the prior art, the complexity of finite element simulation and numerical simulation is too high, and the demand analysis and architecture design in the design process are insufficient are solved, the resistance type superconducting current limiter can be rapidly designed, and the accuracy and consistency of the design result of the resistance type superconducting current limiter can be improved.

The invention provides a high-performance resistance-type profound hypothermia temperature sensor and a manufacturing process, and belongs to the technical field of profound hypothermia temperature sensors. The high-performance resistance-type profound hypothermia temperature sensor is of a laminated structure and comprises a device substrate, a sensitive layer film deposited on the device substrate, an electrode layer film deposited on the sensitive layer film and an interdigital pattern formed after the electrode layer film is etched, the sensitive layer film is a mononitride of transition metal hafnium or zirconium, the electrode layer film is also a mononitride of transition metal hafnium or zirconium, and the two layers of films are made of the same material, but have different element contents and different phase systems. On the premise of ensuring high sensitivity and precision of the temperature sensor, cracking and falling of the sensitive layer film and the electrode layer film are reduced, the service life of the device is prolonged, the reliability of the device is improved, and the application stability of the device is remarkably improved; the method can be widely popularized in the technical field of low-temperature temperature sensors.

The application discloses a single-voltage detection power comparison circuit and belongs to the field of analog integrated circuit design.The circuit is composed of a switch circuit (1), a voltage difference to current circuit (2), a current mirror circuit (3), a voltage to current circuit (4) and a comparison output circuit (5).The switch circuit (1) comprises two complementary switches and five switch arrays; the voltage difference to current circuit (2) comprises a first operational amplifier, a first resistor, a load current mirror and a diode-connected MOS tube; the current mirror circuit (3) comprises six P-type MOS tubes and a pair of N-type MOS tubes; the voltage to current circuit (4) comprises a second operational amplifier, a second resistor, an N-type MOS tube and a diode-connected MOS tube; and the comparison output circuit (5) comprises a current adder-subtracter and two buffers.The application supports an MPPT dynamic tracking algorithm, the comparator output indicates the disturbance direction, the impedance matching and the control strategy are integrated, the adaptability to different DC-DC topologies is enhanced, the system design is simplified and the cost is reduced.

A control circuit for driving a relay to turn on and off quickly, comprising a relay. The first node of the relay coil is connected to a power supply through a boost circuit, and the second node of the relay coil receives a relay driving signal through a switch control circuit. The boost circuit includes a PNP-type triode, a first resistor, a second resistor, an energy storage capacitor, and a first diode. The emitter of the PNP-type triode and the positive pole of the first diode are connected to the power supply. The base of the PNP-type triode is connected to the power supply through the first resistor. The collector of the PNP-type triode and the negative pole of the energy storage capacitor are grounded through a third resistor. The negative pole of the first diode and the positive pole of the energy storage capacitor are connected to the first node of the relay coil. The switch control circuit includes an NPN-type triode and a fourth resistor. The base of the PNP-type triode is connected to the collector of the NPN-type triode and the second node of the relay coil through the second resistor and a voltage stabilizing diode. The base of the NPN-type triode receives the relay driving signal through the fourth resistor, and the emitter of the NPN-type triode is grounded.

The invention discloses a field-circuit coupling joint simulation modeling method for a resistance-type superconducting current limiter, which belongs to the technical field of simulation and comprises the following steps: constructing an electromagnetic heat calculation model of the resistance-type superconducting current limiter based on COMSOL; constructing a circuit simulation model of the resistance type superconducting current limiter power system based on Simulink; and performing joint simulation according to the electromagnetic heat calculation model and the circuit simulation model to obtain the average electric field intensity of the resistance type superconducting current limiter, the average temperature of each layer of the superconducting tape and the average current density of each layer of the superconducting tape. According to the method, through joint simulation modeling of COMSOL and Simulink, current distribution, temperature field distribution, magnetic field distribution, heating and temperature rise of the resistance type superconducting current limiter can be analyzed while parameters such as voltage and current in a circuit are analyzed.

The present disclosure provides a method for manufacturing a resistive random access memory, wherein a resistive random access memory chip manufactured thereby includes a first-type resistive random access memory cell and a second-type resistive random access memory cell, a resistive layer of the first-type resistive random access memory cell includes a high voltage material layer, and a resistive layer of the second-type resistive random access memory cell is a high dielectric constant material layer. The first-type resistive random access memory cell is characterized by a long storage time, and the second-type resistive random access memory cell characterized by a fast response and a high computing speed. The method for manufacturing a resistive random access memory has an innovative process that allows process integration of two types of resistive random access memory cells, so that the manufactured random access memory chip is able to meet two types of performance demands.

The present disclosure relates to hybrid memory devices and methods for forming the same. A memory array includes hybrid memory cells, wherein each hybrid memory cell includes a transistor-type memory and a resistive-type memory. The transistor-type memory includes: a memory film extending over a gate electrode; a channel layer extending over the memory film; a first source / drain electrode extending over the channel layer; and a second source / drain electrode extending along the channel layer, and the resistive-type memory includes a resistive memory layer extending between the second source / drain electrode and the channel layer.

The embodiment of the present disclosure provides a circuit and a low voltage dropout linear regulator for enhancing the ripple suppression capability of the input power supply. The circuit for enhancing the ripple suppression capability of the input power supply includes: a resistor-type buffer, a ripple detection circuit, and a super source follower, wherein the resistor-type buffer receives the error output signal of the error amplifier of the low voltage dropout linear regulator, and transmits the error output signal with equal amplitude to the input end of the super source follower; the ripple detection circuit converts the change of the input power supply into a first current through a first resistor, and obtains a feedforward current through a current mirror to couple the feedforward current to the output end of the resistor-type buffer and the input end of the super source follower; the super source follower reduces the impedance of the output end of the super source follower by increasing the equivalent transconductance of the transistor, and couples the output end of the super source follower to the power tube of the LDO to drive the power tube. The problem of the existing technology occupying a large area, having a poor actual application effect, and limiting the size of the power tube is solved.

The present invention provides a high-performance resistive deep cryogenic temperature sensor and a manufacturing process, belonging to the technical field of deep cryogenic temperature sensors. The high-performance resistive deep cryogenic temperature sensor is a laminated structure, including: a device substrate, a sensitive layer film deposited on the device substrate, an electrode layer film deposited on the sensitive layer film, and a cross-finger pattern formed by etching the electrode layer film; the sensitive layer film is a single nitride of a transition metal hafnium or zirconium, and the electrode layer film is also a single nitride of a transition metal hafnium or zirconium. The materials of the two films are the same, but their respective element contents and physical phase systems are different. The present invention can reduce the cracking and shedding of the sensitive layer film and the electrode layer film, improve the life and reliability of the device, and significantly improve the application stability of the device, while ensuring that the temperature sensor has high sensitivity and accuracy; it can be widely promoted in the technical field of low-temperature temperature sensors.

The application discloses a preparation process of high-resistance M-type hexagonal ferrite and a prepared product, and belongs to the technical field of permanent magnet ferrite. The method comprises the following steps: step a, dosing: dosing pre-sintered materials and auxiliary materials according to a weight ratio, wherein the auxiliary materials include SiO2 0.05%-0.2%, CaCO3 0.5%, Al2O3 0.14% and HBO3 0.3% according to the mass percentage of the pre-sintered materials; step b, ball milling: putting the dosed materials and water in the step a into a ball mill and ball milling; and step c, sintering: sintering the mixture after the ball milling in the step b at 1175 DEG C.-1235 DEG C. The high-resistance M-type hexagonal ferrite prepared by the method has the following performances: Br 390-420 mT, Hcb 270-300 KA / m, Hcj 240-380 KA / m, (BH) max 31-33 kJ / m 3 , and the resistance is greater than 21 MΩ.