390 results about "Resistive type" patented technology

A digital resistive-type touch panel includes first and second transparent substrates opposing each other; a plurality of first transparent electrodes extending along a surface of the first transparent substrate; a plurality of second transparent electrodes extending along a surface of the second transparent substrate, wherein the first and second transparent electrodes cross each other; a first signal line for dividing an applied voltage and applying unique voltages to respective ones of the first transparent electrodes; and a plurality of second signal lines connected to respective ones of the plurality of second transparent electrodes.

A touch panel for a display device integrates functionality provided by resistive-type and EM-type touch panels. The touch panel is integrated with the display device and includes a resisitve-type touch panel arranged above the display device and an EM-type touch panel arranged below the display device.

A resistive type touch panel includes an upper substrate, a lower substrate, and a porous polymer. The upper substrate has a first electrode. The lower substrate has a second electrode facing the first electrode. The porous polymer layer is disposed between the first electrode and the second electrode to increase uniformity of distance between the first electrode and the second electrode. The porous polymer layer has a plurality of openings. The first electrode and the second electrode are electrically connected to each other through the porous polymer layer when an external object makes contact with the resistive type touch panel.

A resistive touchscreen having a programmable display, such as an emissive display matrix of organic light-emitting diodes, or a reflective electronic paper display, built into the coversheet. The touchscreen may be of any resistive type, including 4-wire, 5-wire, and diode 3-wire. A touch/display system is thus provided in which there is little or no degradation of the displayed image due to image transmission through the internal touch sensor components, and in which the internal touch sensor components may be constructed of opaque materials.

Example embodiments include a method for massive parallel stress testing of resistive type memories. The method can include, for example, disabling one or more internal analog voltage generators, configuring memory circuitry to use a common plane voltage (VCP) pad or external pin, connecting bit lines of the memory device to a constant current driver, which works in tandem with the VCP pad or external pin to perform massive parallel read or write operations. The inventive concepts include fast test setup and initialization of the memory array. The data can be retention tested or otherwise verified using similar massive parallel testing techniques. Embodiments also include a memory test system including a memory device having DFT circuitry configured to perform massive parallel stress testing, retention testing, functional testing, and test setup and initialization.

A resistive type touch panel includes a first substrate aligned to be facing a second substrate. The first substrate includes a first conductive layer and the second substrate includes a second conductive layer. A plurality of spacers each having a polygonal column shape are disposed between the first and second substrates in predetermined positions. The geometry and center-to-center spacing of the spacers minimizes detection of a distributed activation force applied to one of the first and second substrate while still providing sensitivity to detect concentrated application of an activation force to one of the first and second substrates.

A patient temperature repeating system and a method of repeating patient temperature information from a resistive-type patient temperature sensor allow one or more medical instruments to utilize a single patient temperature sensor. In one embodiment, the patient temperature repeating system (10) includes input and output connectors (12, 14), a microprocessor (20), optical isolators (22), a coarse digital potentiometer (24) in parallel with a fine digital potentiometer (26), a current sense resistor (28), amplifiers (30A, 30B), analog-to-digital converters (32A, 32B), a filter (34), fuses (36), a non-volatile memory device (38), and a relay (40). In operation, the microprocessor (20) reads the resistance level of a resistive-type patient temperature sensor (16) connected to the input connector (12) and provides the appropriate control signals through the optical isolators (22) to the coarse and fine digital potentiometers (24, 26) in order to set the resistance seen by a medical device (18) connected to the output connector (14) to match that of the patient temperature sensor (16).

A display device integrated with a touch panel is disclosed, which can use various types of input devices. Thus, in addition to conductive devices, a gloved hand or a non-conductive stylus pen can be used as an input. The touch panel includes a supporting substrate; a first transparent conductive layer having a first electrode for applying a voltage to the supporting substrate; a second transparent conductive layer having a second electrode and facing the first transparent conductive layer; an adhesive for attaching the first and second transparent conductive layers to each other; and a passivation film on an outer surface of the second transparent conductive layer.

In a piezo resistance type semiconductor device, a detecting sensitivity and output linearity are improved without increasing a forming region of a diaphragm. In a piezo resistance type semiconductor device having: a diaphragm; a supporting frame which is connected to an external periphery of the diaphragm, supports the diaphragm, and is formed relatively thicker than the diaphragm; and piezo resistance type stress detectors (4a, 4b) each for detecting a stress caused when the detector is distorted by deformation of the diaphragm by application of an acceleration or a pressure in the direction perpendicular to the diaphragm, at least a part of the diaphragm is cut off in a position where it is come into contact with the piezo resistance type stress detector and a groove is formed.

The invention discloses a heat preventing and insulating stealth compound material with broad-band wave absorption and a preparation method thereof. The compound material comprises a cold-faced panel,a first aerogel compound material heat-insulating layer, a first resistance high-temperature super-material layer, a second aerogel compound material heat-insulating layer, a second resistance high-temperature super-material layer, a third aerogel compound material heat-insulating layer and a hot-faced panel from inside to outside sequentially. In the aspect of heat preventing and insulating performance, compared with existing heat insulating tiles and cover plate type heat prevention systems, the integrated heat preventing and insulating stealth compound material has the advantages of good heat insulating performance, excellent mechanical performance, large component preparation availability, high reliability, easiness in maintenance and the like; and in the aspect of stealth performance, the technical scheme adopting the high temperature super-material has the advantages of strong designability and easiness in broad-band wave absorption implementation, weight gain is hardly generated in comparison with the technical scheme of a cold-faced by adopting a wave absorbing material, absorbent is not required to be added into a heat preventing and insulating material, the heat preventing and insulating performance is not influenced, and the material has good uniformity and strong controllability.

The invention discloses a polymethyl methacryate/polyaniline nanometer fiber composite resistance membrane gas sensor and a relative preparation method. The invention uses electrostatic spinning method to prepare polymethyl methacryate (PMMA) nanometer fiber, uses solution original aggregation method to compose polyaniline (PAN) to obtain the PMMA/PANI nanometer fiber composite membrane, and covers the composite film on the an Au interdigital ceramic substrate electrode. The invention has simple preparation, low cost and batch production application, while the prepared gas sensor has wide measurement range, high response sensitivity, better linearity, better resilience and room-temperature detection on triethylamine gas. The invention has wide application for online accurate measurement of triethylamine gas density under room temperature in industrial and agricultural production and atmosphere.

A memory core of a resistive type memory device includes at least a first resistive type memory cell coupled to a bit-line, a first resistance to voltage converter and a bit-line sense amplifier. The first resistance to voltage converter is coupled to the bit-line at a first node. The first resistance to voltage converter converts a resistance of the first resistive type memory cell to a corresponding voltage based on a read column selection signal. The bit-line sense amplifier is coupled to the bit-line at the first node and is coupled to a complementary bit-line at a second node. The bit-line sense amplifier senses and amplifies a voltage difference of the bit-line and the complementary bit-line in response to a sensing control signal.

The invention discloses a high temperature resistant radar and infrared compatible stealth material based on double-layer metamaterials. The high temperature resistant radar and infrared compatible stealth material is of a layered structure sequentially comprises a dielectric layer I, a resistance-type high temperature metamaterials layer, a dielectric layer II, a decorative layer and a frequency selective surface layer from inside to outside, wherein both the dielectric layer I and the dielectric layer II are made of oxide fiber reinforced oxide-based composite materials, the resistance-type high temperature metamaterials layer mainly comprises a high temperature resistant resistor coating with periodic patterns, the decorative layer is made of glass coatings, and the frequency selective surface layer mainly comprises a high temperature resistant antioxidant and low infrared emissivity precious metal plating layer with periodic patterns. A preparation method is characterized in that the materials of the layers are prepared in a layered manner. The high temperature resistant radar and infrared compatible stealth material has high designability, the problem of radar and infrared compatible stealth contradiction can be effectively solved from the perspective of structural design by the aid of metamaterial technology, and the high temperature resistant radar and infrared compatible stealth material has good broadband wave-absorbing performance and low emissivity and can resist high temperature of 1000 DEG C or more.

The invention discloses a flexible resistive-type pressure sensor array and a preparation method therefor. The flexible resistive-type pressure sensor array comprises a surface packaging layer, an electrode layer and a functional layer, wherein the electrode layer comprises a base film and a plurality of thin film metal wires arranged on the base film at equal intervals. The thin film metal wiresare connected with a multi-way gate. The functional layer is a flexible elastic film with a convex microstructure on the surface, and the flexible elastic film is covered by a plurality of conductivemetal wires arranged at equal intervals, wherein the conductive metal wires are connected with an operational amplifier. The thin film metal wires of the electrode layer and the conductive metal wiresof the functional layer are stacked and assembled in a vertical crossing manner. The pressure sensor array provided by the invention has a series of advantages, such as high sensitivity, fast response and recovery, low operating voltage, large array scale, simple preparation process, and low cost.

Example embodiments include a resistive type memory sense amplifier circuit including differential output terminals, first and second input terminals, a pre-charge section, and other components arranged so that current is re-used during at least a “set” or “amplification” stage of the sense amplifier circuit, thereby reducing overall current consumption of the circuit, and improving noise immunity. A voltage level of a high-impedance output terminal is caused to swing in response to a delta average current between a reference line current and a bit line current. During a “go” or “latch” stage of operation, a logical value “0” or “1” is latched at the differential output terminals based on positive feedback of a latch circuit. Also disclosed is a current mirror circuit, which can be used in conjunction with the disclosed sense amplifier circuit. In yet another embodiment, a sense amplifier circuit includes the capability of read/re-write operation.

The invention relates to a torsion and/or tension and/or pressure textile sensor. The textile sensor is a resistive-type sensor consisting of: at least one base layer of fabric (1) comprising any composition and/or mixture and produced using any technique; optionally a surface treatment (2) in order to render the surface of the fabric (1) more uniform; a single conductive layer (3) having tracks distributed geometrically such as to define areas (31) sensitive to stresses from conductive fluids and an encapsulation and protection layer (4) on the conductive layer (3); optionally an upper fabric layer (5); and a least one signal converter (7) which is connected to the tracks, such that when one of the above-mentioned areas (31) is subjected to pressure, tension or torsion a large variation in the resistance of said track is produced, which can be detected by the converter (7). The sensor optionally includes an imprint (6) defining the aforementioned areas (31) on the outer face of either of the fabric layers (1,5).

A read/verify circuit for multilevel memory cells includes: a read terminal selectively connectable to a plurality of array cells, having respective array threshold voltages; a plurality of reference cells, having respective reference threshold voltages; and a plurality of threshold-detection circuits, for detecting the array thresholds and the reference thresholds. In particular, the read terminal and the reference cells are each connected to a respective threshold-detection circuit. Each threshold-detection circuit is provided with a respective detector element of a resistive type, set so as to be traversed by a current response to turning-on of the respective array cell or reference cell associated thereto.

Disclosed herein is a device that includes: a memory including a variable resistive memory cell including first and second terminals, a variable resistive memory element coupled between the first and second terminals, and a select transistor coupled between the second terminal and a first voltage line; and a capacitor circuit configured to be connected to the first terminal of the variable resistive memory cell when the select transistor is selected to be conductive between the second terminal and the first voltage line, the first terminal of the variable resistive memory cell being increased in voltage by the capacitor circuit to change a resistivity of the variable resistive memory element from a first level to a second level that is smaller than the first level.