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1382results about How to "Avoid temperature" patented technology

Terahertz light source chip and manufacturing method thereof, terahertz light source device and manufacturing method thereof, and terahertz light source module and manufacturing method thereof

The invention provides a terahertz light source chip and a manufacturing method thereof, a terahertz light source device and a manufacturing method thereof, and a terahertz light source module and a manufacturing method thereof. The light source chip comprises a two-dimensional electron gas mesa, an electrode, a terahertz resonant cavity and an optical grating, wherein the electrode is formed on the two-dimensional electron gas mesa and used for exciting plasma waves; the terahertz resonant cavity is formed below the two-dimensional electron gas mesa, and a holophote is arranged on the bottom surface of the resonant cavity; the optical grating is formed on the two-dimensional electron gas mesa and used for coupling a plasma wave mode to a terahertz resonant cavity mode so that terahertz wave emission can be generated. Plasma polaritons are formed by strongly coupling the terahertz resonant cavity mode to the plasma wave mode in two-dimensional electron gas under the optical grating, terahertz wave emission can be generated through electric excitation of the plasma polaritons, the problem that terahertz emission is low in frequency or working temperature because of high frequency oscillation relaying on a single electron or quantum jump relaying on a single electron is solved, and the emission frequency range and the working temperature range are widened.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Wireless sensor network application-oriented low-power consumption radio frequency receiving and sending device

The invention discloses a wireless sensor network application-oriented low-power consumption radio frequency receiving and sending device which comprises a duplexer, a radio frequency front end, a variable gain complex filter, an automatic frequency tuning circuit, a programmable gain amplifier, a phase-locked loop frequency synthesizer, a digital processor, a storage, a variable gain power amplifier, a mixer and a low pass filter, wherein the duplexer, the radio frequency front end, the variable gain complex filter, the automatic frequency tuning circuit and the programmable gain amplifier form a receiving link which is used for receiving and processing a radio frequency signal and converting the radio frequency signal into a low-medium frequency digital signal so that the signal can be conveniently processed by a subsequent analog-digital converter later; the duplexer, the variable gain power amplifier, the mixer and the low pass filter form an emitting link which is used for mixing a baseband analog modulation signal into a carrier frequency and sending a wireless signal; and the receiving link and the emitting link share the duplexer. The wireless sensor network application-oriented low-power consumption radio frequency receiving and sending device realizes singlechip integration by adopting a standard CMOS (Complementary Metal Oxide Semiconductor) process, is simple in structure and low in power consumption, and is applicable to a wireless sensor network.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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