The invention discloses a
wafer infrared transmittance measuring device and method, and the device employs a heat preservation box body which is a closed box body, and can guarantee the consistency of the internal environment temperature after full isothermal treatment. A surface source
black body is arranged in the heat preservation box body as a
radiation background; the temperature of the surface source
black body can be randomly set by a user; a tested
wafer parallel to the surface source
black body is arranged at a position, close to the surface source black body, in the heat preservation box body; the shooting end of the
infrared camera faces the
wafer to be measured, the distance between the shooting end of the
infrared camera and the wafer to be measured meets the requirement that the
shooting range completely envelops the whole wafer to be measured, and the wafer to be measured is measured by adopting a full-
screen method. During measurement, different
working temperature points are set, an infrared camera is used for sampling the whole wafer to be measured for multiple times, obtained data are fitted through a computer, and finally the infrared band average
transmittance value of the wafer to be measured is obtained. The problems that an existing wafer infrared
transmittance measuring method is high in cost and complex in operation can be solved.