This invention discloses an intelligent
MOSFET device with
overcurrent protection, relating to the field of
semiconductor power device technology. The device includes a main
chip with a main
MOSFET, a sampling
MOSFET, and a drifting thin-film
resistor fixed on it. The sampling MOSFET has a differential
offset calibration area and an
overcurrent detection and protection drive area on its left side, with a high-precision reference area between them. A self-
recovery block is located on the right side of the
overcurrent detection and protection drive area. The main MOSFET integrates a channel region and other structures internally. The sampling MOSFET is connected in parallel with the main MOSFET. The drifting thin-film
resistor connects to the sampling circuit. The differential
offset calibration area performs
signal calibration and amplification. The high-precision reference area provides a stable reference
voltage. During overcurrent, the drive
signal is quickly
cut off. After the fault is cleared, the self-
recovery block automatically resets. This device has a compact structure, high detection accuracy, and requires no manual intervention, making it suitable for scenarios with high safety requirements, such as
lithium battery protection boards and
motor drive circuits.