187 results about "Radiation thermometer" patented technology

Oppositely of a temperature measuring surface of an object-to-be-measured 16, a reflecting member 28 is disposed while being spaced by a reflection gap 35 from the temperature measuring surface. The reflecting member 28 is composed of a heat ray reflecting material capable of reflecting heat ray in a specific wavelength band, in a portion including a reflection surface 35a. A heat ray extraction pathway section 30 is disposed through the reflecting member 28 so that one end thereof faces the temperature measuring surface. Heat ray extracted through the heat ray extraction pathway section from the reflection gap is detected by a temperature detection section 34. The heat ray reflecting material is configured in a form of a stack comprising a plurality of element reflecting layers composed of a material having transparent properties to the heat ray, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices which differ from each other by 1.1 or more. This makes the measurement be hardly affected by radiation ratio of the object-to-be-measured when temperature of the object-to-be-measured is measured by a radiation thermometer, enables to measure its temperature more correctly irrespective of the surface state thereof, and can simplify configuration of a measurement system.

A shower head structure characterized by comprising a shower head section, opposed to the upper surface of a mounting table in an evacuable treating vessel, for injecting a processing gas into the treating vessel; a temperature observation through-hole which opens in the lower surface of the shower head so as to be opposed to the upper surface of the mounting table, a transparent observation window which hermetically seals the upper end of the temperature observation through-hole, a radiation thermometer disposed on the upper surface of the transparent observation window, an adhesion preventive gas supply path communicating with the temperature observation through-hole to prevent a film from adhering to the transparent observation window, wherein the adhesion preventive gas supply path communicates with the temperature observation through-hole through an injection nozzle for injecting the adhesion preventive gas to the transparent observation window.

A shower head structure disposed in a device 2 for processing a semiconductor while supplying processing gas to a processing space S for storing a heated processed substrate W, comprising a shower head 12 having a plurality of gas injection holes 20B for supplying the processing gas and a light introducing rod 68 of a radiation thermometer 66 inserted into at least one of the gas injection holes 20B.

After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.

To provide a radiation thermometer capable of measuring a body temperature more accurately than it has been conventionally possible, by taking into account an infrared ray that is emitted from a front end of the probe portion and reflected from an eardrum or an external acoustic opening. The radiation thermometer has body temperature calculating means for calculating a body temperature according to a predetermined arithmetic expression based on an emissivity when the emissivity of the eardrum or the external acoustic opening is less than 1, an output of infrared-ray detecting means and an output of temperature-measuring means.

The invention relates to a method and a device of measuring material thermal shock property, which belongs to the technical field of engineering materials, structural deformation and mechanics experiment. The measuring device comprises an air cushion precision optical platform, a temperature controlled switch, a PID temperature controller, an infrared radiation thermometer, an LED lamp bracket, anLED lamp, an A-frame, a lens, a high speed camera, a computer, a test piece, a thermoelectric pair, alumina ceramics, asbestos wire gauze, a heating furnace, a thermal insulation shield, a burette and a stand. The invention combines heating equipment and an optical photographic apparatus, masterly utilizes a digital image cross-correlation method and provides the method and the device of measuring material thermal shock property. The invention has novel train of thought, compact structure and complete system, and can realize quantitative analysis and measurement on the material thermal shockproperty.

A two-color radiation thermometer includes an image pickup device having micro photo receiving units arranged two-dimensionally; a light diverging device for diverging incident light coming from a measuring object into two paths and irradiating the light on two different areas on a two-dimensional light receiving surface of the image pickup device; a wavelength limitation device for limiting wavelengths of the light irradiated on the two different areas to first and second wavelengths, respectively; and a temperature calculation device. The calculation device receives image signals corresponding to the first and second wavelengths respectively from the micro photo receiving units located at the two different areas, and calculates the temperature of the measuring object based on the two image signals.

The invention relates to a method for measuring the emissivity of an infrared temperature measurement target body, which includes the following steps: (1), selecting an infrared radiation thermometer; (2) selecting a high-temperature tubular furnace; (3), selecting a temperature measurement standard equipment; (4), extracting and fabricating a sample of the object to be measured; (5), putting the sample of the object to be measured in the high-temperature tubular furnace; (6), keeping the infrared radiation thermometer coaxial with the sample of the object to be measured; (7), adjusting the distance for temperature measurement of the infrared radiation thermometer; (8), arranging a visor provided with an open pore between the sample of the object to be measured and the infrared radiation thermometer; (9), aiming a visual optical aiming system on the infrared radiation thermometer at the sample of the object to be measured; (10), heating the high-temperature tubular furnace and recording the standard temperature T; (12), adjusting the emissivity or gradient value of the infrared radiation thermometer and recording the emissivity or gradient value displayed after being adjusted; and (13), taking the data processing manner of 'equal precision and multiple measurements' to obtain a data set of the partial emissivities of the sample of the object to be measured within a certain temperature range. The method is simple, low in cost and easy to realize.

A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.

A radiation thermometer utilizing an off-focus telecentric lens arrangement in chemical vapor deposition reactors. An object assembly of one or more optical components is positioned at a distance equal to its focal length from an aperture stop. The aperture stop is dimensioned so that the chief rays are substantially parallel with the optical axis of the object assembly, and so that the rays that pass through the aperture stop define a narrow solid angle about the chief rays. The off-focus telecentric arrangement thus configured is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation, particularly with targets having a highly specular surface.

The present invention discloses a method and apparatus for measuring the temperature field on the surface of casting billet/slab, including: a thermal imager, an infrared radiation thermometer, a mechanical scanning unit, an image and data processing system; the thermal imager, the infrared radiation thermometer and the mechanical scanning unit are respectively connected to the image and data processing system; the infrared radiation thermometer is installed on the mechanical scanning unit and can measure the temperature of casting billet/slab surface by scanning; the thermal imager can measure the temperature of a certain area on the surface of casting billet/slab by thermal imaging. The present invention makes use of the combination of high-resolution thermal imager and scan-type infrared radiation thermometer, through the model-based filtering method, overcomes the influence of iron scales on the surface of casting billet/slab, and implements real-time stable measurement of surface temperature of casting billet/slab.

From a stage of preheating by a halogen lamp to irradiation with a flash by a flash lamp, a radiation thermometer is used for measuring the temperature of a back surface of a semiconductor wafer. A increased temperature ΔT is determined by which the back surface of the semiconductor wafer is increased in temperature from the preheating temperature by irradiation with a flash. The specific heat of the semiconductor wafer has a known value. Further, the increased temperature ΔT is proportionate to the magnitude of energy applied to a front surface of the semiconductor wafer by irradiation with a flash. Thus, a front surface attained temperature of the semiconductor wafer can be determined using the increased temperature ΔT of the back surface of the semiconductor wafer during irradiation with a flash.

The invention relates to a special auxiliary device for continuous measurement of molten iron temperature. The device comprises an air-cooling jacket, wherein an auxiliary tube of the air-cooling jacket is communicated with a first end part and a second end part of a main tube; the first end part is provided with an air inlet; a mounting position for an infrared radiation thermometer positioned between the first end part and the second end part is arranged in the main tube; and preferably, an air path which is communicated with the auxiliary tube and oriented to the mounting position of the infrared radiation thermometer is arranged in the second end part. The device also comprises a light shading tube which is inserted and fixed in the second end part, an adjusting device and an air supply component, wherein the adjusting device comprises a fixed link and an adjusting part; the first end part is fixed on the fixed link; the adjusting part is fixed with the fixed link and the second end part respectively; and an air outlet pipeline of the air supply component is connected with the air inlet. The invention also relates to a molten iron temperature continuous measurement system with the special auxiliary device. The special auxiliary device has smart design, and can accurately and continuously measure the molten iron temperature, thereby realizing real application of the infrared radiation thermometer in molten iron temperature measurement.

The present invention discloses a black body emissivity measuring device based on control background radiation, and a black body emissivity measuring method based on control background radiation. The measuring device comprises a to-be-measured black body; a heat radiation ring located at one side of an opening of the to-be-measured black body; and an infrared radiation thermometer for measuring an acquired radiation signal. A water cooling diaphragm is arranged between the heat radiation ring and the infrared radiation thermometer, and is used to reduce the stray radiation. The black body emissivity measuring device based on the control background radiation analyzes the influence of the temperature change of the heat radiation ring and the black body on a measurement result, and verifies the feasibility of the method applied to the spaceborne calibration black body emissivity on-orbit calibration.

Disclosed are a method and apparatus for determining acceptance/rejection of fine diameter wire bonding of semiconductor devices, LED devices, and the like, which has been impossible with conventional methods, such as the method by image processing, with high accuracy and with no contact. The apparatus includes a heating laser device 1 for spot-heating the bonding portion of a fine diameter wire; a two-wavelength infrared radiation thermometer 2 for measuring temperature at high speed on the basis of a minute amount of infrared rays radiated from the heated portion of the fine diameter wire with correction of the emissivity; and a correction computing and determining means 4 for correcting the result of measurement with the two-wavelength infrared radiation thermometer 2 to a temperature change with the reference heating power, and then determining acceptance/rejection of the bonding by comparing the corrected temperature change or a numerical value correlated to a bonding area obtained from that temperature change, with a temperature change indicated by an acceptable product as a comparison criterion that has been corrected to the reference heating power or a numerical value correlated to a bonding area obtained from that temperature change.

A substrate in a chamber is preheated through light irradiation by a halogen lamp and then heated through irradiation with flash light from a flash lamp. Ammonia is supplied to the chamber from an ammonia supply mechanism to form ammonia atmosphere. The temperature of the substrate at heating processing is measured by a radiation thermometer. When the measurement wavelength band of the radiation thermometer overlaps with the absorption wavelength band of ammonia, the set emissivity of the radiation thermometer is changed and set to be lower than the actual emissivity of the substrate. When radiation light emitted from the substrate is absorbed by the ammonia atmosphere, the radiation thermometer can accurately output the temperature of the substrate as a measured value by reducing the set emissivity of the radiation thermometer.

The invention relates to an air pressure forming method of an infrared heating metal foil plate and a device; wherein, the method includes the steps of accurately heating a metal foil plate with an infrared heat source, applying pressure to the softened metal foil plate with high pressure gas and realizing the precise forming of the metal foil plate by matching a micro mold; the device consists of a bottom plate, an upper pressure plate, a micro mold, a gas pressure nozzle, a three-dimensional mobile platform, a three-dimensional mobile platform controller, an air compressor, a computer, a drive, an infrared radiation thermometer, a three-dimensional worktable and an infrared focusing heating device. The method and the device integrates the technologies of infrared heating, infrared temperature measurement and air pressure forming to a micro-forming process, thus improving the forming performance of the metal foil plate, ensuring the quality of the surfaces of work pieces; the high pressure gas is used for replacing a male mold, thus simplifying the technique, causing the loading pressure to be more even and strengthening the filling ability; the method and the device can realize the low cost and mass production of the metal foil plate by combining an array female mold.

A temperature fixed-point cell is configured with a crucible composed of carbon and a fixed-point material enclosed in the crucible. The fixed-point material has a peritectic structure of carbon and a carbon compound. A thermometer is calibrated by installing the temperature fixed-point crucible in a furnace, increasing or decreasing the ambient temperature thereof, measuring the temperature of the temperature fixed-point cell with the thermometer, observing the state of temperature change, and using this state of temperature change as a basis for the calibration. This invention is aimed at realizing a fixed point in the temperature range exceeding the copper point and accomplishing great improvement in accuracy in the calibration of radiation thermometers, thermocouples and all thermometers used in high temperature ranges.

The present invention relates to a determining device of non-metal material high temperature expansibility and a usage method thereof. The device comprises a water-cooling high temperature sealed room, a temperature control system, a force-measuring device, a vacuum device and an air supply. The structure of the water-cooling high temperature sealed room is as follows: a plane bearing 21 is concentrically arranged on the metal water-cooling basal seat 24 which is fixed on the center of the bottom of the water-cooling sealed room 3; an adjusting nut 25 is arranged in the plane bearing 24; a carbon ring and an induction coil 4 are arranged on the outer part of a detect-waiting sample which is placed on a metal water-cooling lower support 19; the induction coil 4 is connected with the output end of an induction furnace. The temperature control system is that the receive end of an infrared radiation thermometer 14 aims at a sample 8; a computer 15 is respectively connected with the infrared radiation thermometer 14 and the induction furnace 1; the mobile pressure head 9 of the force-measuring device is pressed on a water-cooling pressure head 7; the force-measuring sensor 22 is connected with the computer 15. The present invention is of simple structure, small volume, high temperature raising speed, high usage temperature, little maintaining, and can carry out the measurement under various environments.

A front surface of a semiconductor wafer is momentarily heated by irradiation with a flash of light from flash lamps. An upper radiation thermometer and a high-speed radiation thermometer unit measure a temperature of the front surface of the semiconductor wafer after the irradiation with the flash of light. The temperature data are sequentially accumulated, so that a temperature profile is acquired. An analyzer determines the highest measurement temperature of the semiconductor wafer subjected to the flash irradiation from the temperature profile to calculate a jump distance of the semiconductor wafer from a susceptor, based on the highest measurement temperature. If the calculated jump distance is greater than a predetermined threshold value, there is a high probability that the semiconductor wafer is significantly out of position, so that the transport of the semiconductor wafer to the outside is stopped.