37 results about "Radiation thermometer" patented technology

This invention discloses a calibration device for radiation thermometers and its usage method. The device includes a base with a movable seat on top. The base has several clamping holes for holding a temperature measuring gun, and the movable seat is located on one side of the clamping holes. Several telescopic cylinders are rotatably connected to the base, and telescopic rods are threaded into the internal parts of the telescopic cylinders. A slider is fixedly connected to each telescopic rod, and the slider is slidably connected to the base. The telescopic rods are located on one side of the clamping holes. This device is easy to operate, can calibrate multiple radiation thermometers, has a high degree of automation, and offers high calibration efficiency.

To provide a radiation thermometer 100 capable of accurately measuring the temperature of a measuring object region Xa by surely eliminating the influence of a non-object even if the non-object other than the measuring object region exists in a measuring visual field.SOLUTION: This infrared sensor is provided with two infrared detection parts 1, 1' having a prescribed measurement visual field and detecting the quantity of infrared rays incident from the measurement visual field, and a temperature calculation part 2 for calculating the temperature of the measurement object area Xa based on the infrared quantities detected by the respective infrared detection parts 1, 1', and the measurement object area Xa is set so as to be included in the measurement visual fields of the respective infrared detection parts 1, 1' and the sizes of the respective measurement visual fields based on the measurement object area Xa are different from each other.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of glass manufacturing temperature monitoring, and relates to a small-aperture optical fiber infrared radiation thermometer and a use method thereof. Comprising an optical assembly used for collecting infrared radiation signals of a measured glass substrate through a small aperture; the input end of the optical fiber transmission unit is connected with the optical assembly; the optical fiber transmission unit is used for transmitting the infrared radiation signal; the input end of the infrared detection module is connected with the output end of the optical fiber transmission unit; the infrared detection module is used for converting the infrared radiation signal into an electric signal; the signal calibration module is connected with the infrared detection module; the signal calibration module is used for calibrating the electric signal to output an accurate temperature value; and the integrated mounting and fixing structure is used for bearing and fixing the optical component and mounting the optical component at the small aperture. According to the invention, high-precision and non-contact continuous monitoring of the temperature of the glass substrate is realized under complex working conditions.

A radiation thermometer includes two infrared detectors and a temperature calculator. The infrared detectors each have a predetermined measurement visual field and detect the amount of infrared rays incident from the measurement visual field. The temperature calculator calculates the temperature of a measurement target region based on the amounts of infrared rays detected by the respective infrared detectors. The measurement target region is included in the measurement visual fields of the respective infrared detectors, and the sizes of the respective measurement visual fields are set to be different from each other with respect to the measurement target region.

To obtain a fine image without halation even in an object to be measured at a high temperature.SOLUTION: The radiation thermometer 1 is provided with an ND filter 7 whose transmissivity is set to 1-10% and which reduces the quantity of light due to thermal radiation from a measuring object, an IR cut filter 8 whose cut-off wavelength is set within a prescribed wavelength range including 650 nm and which cuts off light in a wavelength region equal to or higher than the cut-off wavelength from the light due to the thermal radiation from the measuring object and transmits only visible light, and a camera module 9 which receives the light transmitted through the ND filter 7 and the IR cut filter 8 and converts it into an electric signal and processes the electric signal converted by the CMOS sensor 9b to photograph an image of the light due to the thermal radiation from the measuring object.SELECTED DRAWING: Figure 1

This prevents incorrect correction values ​​from being set when using a radiation thermometer on a substrate processing device to control the temperature of a wafer. [Solution] The management device includes a registration unit that registers a correction table in which the instrument error data of each radiation temperature measuring instrument relative to a reference radiation temperature measuring instrument and information identifying each radiation temperature measuring instrument are associated, and a transmission unit that, when it receives a request for a correction table including information identifying the specific radiation temperature measuring instrument from a substrate processing device to which a specific radiation temperature measuring instrument is attached, transmits a correction table corresponding to the information identifying the specific radiation temperature measuring instrument to the requesting substrate processing device.

The invention provides an ion implantation apparatus which is provided with a radiation thermometer in a processing chamber and can accurately measure the temperature of a wafer in implantation processing. An ion implantation device (IM, IM2) is provided with: a processing chamber (1); a wafer conveyance mechanism (E) that linearly reciprocates the wafer (W) in the processing chamber (1) across a first non-irradiation region (R1), an irradiation region (R3), and a second non-irradiation region (R2) of the ion beam (IB); a case (2) disposed in either the first non-irradiation region (R1) or the second non-irradiation region (R2); a radiation thermometer (3) disposed in the atmospheric pressure space inside the housing (2); and a window (4) which is mounted on the case (2) and through which the infrared rays emitted from the wafer (W) pass.

This invention provides a liquid metal homogenizing blackbody furnace based on induction heating, belonging to the technical field of infrared radiation temperature measurement equipment. It includes a coaxial graphite tube, liquid metal, insulation material, a water-cooled coil, a temperature measuring device, and a high-frequency power control module. The coaxial graphite tube consists of an inner and outer graphite tube, forming an annular gap between them. The inner cavity of the inner graphite tube constitutes the blackbody cavity. The liquid metal fills the annular gap, generating eddy current heat under an alternating magnetic field. The insulation material covers the outer graphite tube. The water-cooled coil is wound around the outside of the insulation material. The temperature measuring device is attached to the wall of the coaxial graphite tube. The high-frequency power control module is electrically connected to the water-cooled coil to provide high-frequency current, causing it to generate an alternating magnetic field. This invention achieves high spatial temperature uniformity and long-term operational stability of the blackbody radiation cavity wall at high temperatures without relying on precise coil arrangement or mechanical motion compensation.

This invention provides a technique for measuring the temperature of a glass ribbon diagonally below a window in the side wall of a heat treatment furnace that houses a horizontal glass ribbon, when forming a glass ribbon using the float method. [Solution] The glass manufacturing method comprises rotating a top roll while pressing down on the widthwise end of the upper surface of a horizontal strip-shaped glass ribbon with the top roll. The glass manufacturing method comprises measuring the temperature of the widthwise end of the glass ribbon diagonally below the window through a window in the side wall of a heat treatment furnace that houses the horizontal glass ribbon using a radiation thermometer.

To provide a method for continuously measuring the temperature of molten iron in a blast furnace with which the accuracy of the continuous measurement of the molten iron temperature with a radiation thermometer can be improved, and to provide a method for operating the blast furnace.SOLUTION: In the method for continuously measuring the temperature of the molten iron in the blast furnace, the temperature of the molten iron discharged from a tapping hole in the blast furnace is continuously measured by using a radiation thermometer, and the temperature of the molten iron is measured by the radiation thermometer so as to reduce the effect of dust on the temperature of the molten iron measured by the radiation thermometer.SELECTED DRAWING: Figure 1

The present application provides a single crystal silicon manufacturing device (1), the single crystal silicon manufacturing device (1) has cavity (50), crucible (51), radiation thermometer (3), light source (5), adjusting device (4), the crucible (51) is arranged in cavity (50), the radiation thermometer (3) has the detecting element (16) of detecting the radiation light from the measured object, the lens (15) of converging radiation light to detecting element (16) and the viewfinder (17) for visually confirming measured object, the light source (5) supplies light to measured object along the axis line coinciding with the optical axis (A) of lens (15) via viewfinder (17) and lens (15), and the adjusting device (4) supports radiation thermometer (3) in the state that the measured position of radiation thermometer (3) can be adjusted.

The present invention provides a radiation thermometer that can be miniaturized and has a larger circuit scale. The radiation thermometer includes: an infrared sensor (2); a signal processing unit (4) for processing the signal of the infrared sensor (2); and a housing (5) for housing the infrared sensor (2) and the signal processing unit (4). The signal processing unit (4) is constructed by stacking multiple substrates (41-44) through spacers (45).

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

To provide a technique capable of accurately measuring the surface temperature of a molded article made of a resin.SOLUTION: The mold device 1 includes a mold 2 having a molding space S into which a resin is injection-supplied and a first through-hole 16 penetrating between the molding space S and the outside, a radiation thermometer 4 having a light receiving surface 20a provided in the first through-hole 16 so as to face the molding space S side, and a metallic thin film member 30 provided in an opening portion 16a of the first through-hole 16 opened to the molding space S. The metallic thin film member 30 has a first surface 30a facing the forming space S and a second surface 30a opposite to the first surface 20a and facing the light receiving surface 30b.SELECTED DRAWING: Figure 1

An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

The application discloses an indoor body temperature sensing detection device and method, and relates to the technical field of indoor environment monitoring. The device comprises a sensing and collecting module, a central processing module and a terminal module. The sensing and collecting module comprises an air dry bulb temperature sensor, a relative humidity sensor, a breeze speed sensor and a black ball radiation thermometer. The parallel sensing array composed of the air dry bulb temperature sensor, the relative humidity sensor, the breeze speed sensor and the black ball radiation thermometer is arranged to synchronously acquire multi-dimensional basic physical parameters, thereby overcoming the defect that the traditional device only relies on single temperature and humidity, which causes the detection value to be disengaged from the real thermal perception of the human body. The physical isolation structure corresponding to the independent signal transmission cable of each sensor is welded, thereby avoiding channel crosstalk during the concurrent transmission of multiple signals and ensuring the signal integrity of the underlying original physical data.

A semiconductor manufacturing apparatus according to an embodiment includes: a chamber; a susceptor capable of placing a wafer; a rotary body that rotates the susceptor around a prescribed central axis; a first radiation thermometer disposed above the chamber that measures a temperature of a first temperature measurement position of the wafer; a second radiation thermometer disposed above the chamber adjacent to the first radiation thermometer that measures a temperature of a second temperature measurement position of the wafer; a first heater that heats a central region of the wafer and a second heater that heats an outer region of the wafer; and a control section that controls power applied to the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and shorter than 0.8 times a radius of the wafer.

A radiation thermometer is placed in the process chamber to accurately measure the temperature of the wafer during the implantation process.SOLUTION: The ion implantation apparatus IM, IM2 includes a processing chamber 1, a wafer transfer mechanism E that linearly reciprocates the wafer W over a first non-irradiated region R1, an irradiated region R3, and a second non-irradiated region R2 of the ion beam IB in the processing chamber 1, a housing 2 disposed in one of the first non-irradiated region R1 and the second non-irradiated region R2, a radiation thermometer 3 disposed in an atmospheric-pressure space inside the housing 2, and a window 4 that is attached to the housing 2 and transmits infrared rays emitted from the wafer W.SELECTED DRAWING: Figure 1

To provide a thermoforming apparatus capable of satisfying the optimum heating condition of a resin sheet.SOLUTION: The thermal forming device 100 having a heater unit 10 for heating a sheet S1 part which is an object to be heated includes a radiation thermometer 33 for measuring the sheet surface temperature Dss of the sheet S1 part, a PLC31 for controlling the power of the heater unit 10, and a power measuring means for measuring the power of the heater unit 10. A PLC31 includes a first temperature control means 312 for controlling an output of a heater unit 10 so that a sheet surface temperature Dss measured by a radiation thermometer 33 is sequentially lowered from an initial temperature, and starts feedback control for performing control according to a comparison result between the sheet surface temperature Dss and a target temperature Td after the sheet surface temperature Dss reaches the target temperature Td by control by the first temperature control means 312. The fixing device includes a second temperature control means 313, and a calorific value evaluation means 315 for linearly approximating the change of the power value given to the sheet S1 part by the heater unit 10 based on the power value of the power measuring means and evaluating it as an inclination I.SELECTED DRAWING: Figure 4

The invention provides a two-color radiation thermometer, a laser system and a temperature measuring method. Provided is a two-color radiation thermometer or the like capable of measuring the temperature of an object with high accuracy. The two-color radiation thermometer includes: a first sensor configured to detect a first intensity, which is an intensity of a first infrared ray radiated from an object; a second sensor that detects a second intensity, which is an intensity of a second infrared ray radiated by the object and having a wavelength different from that of the first infrared ray; and a temperature calculation unit that calculates a first coefficient by inputting a second coefficient, which is calculated on the basis of a first intensity detected by the first sensor and a second intensity detected by the second sensor, into the correction function. The temperature of the object is calculated on the basis of an intensity ratio, which is the ratio between the first intensity detected by the first sensor and the second intensity detected by the second sensor, and the calculated first coefficient, and a correction function is calculated on the basis of a correction coefficient calculated in advance from the measured temperatures in each of the plurality of different materials.

The invention discloses a focal length light spot adjusting system and method for a strip steel high-temperature radiation thermometer of an annealing furnace. The target measurement module comprises a mobile platform arranged on the working table, and a radiation thermometer and a range finder which are arranged on the mobile platform, and the mobile platform is used for driving the radiation thermometer and the range finder to synchronously do reciprocating linear motion relative to the working table in the X-axis direction and the Y-axis direction; the short-distance reference module is used for assisting in realizing short-distance focal length adjustment of the radiation thermometer; and the long-distance reference module is used for assisting in realizing long-distance focal length adjustment of the radiation thermometer. The focal length of the radiation thermometer can be rapidly adjusted on site, it is ensured that the internal aperture of the radiation thermometer can accurately irradiate the optimal temperature measurement point at the included angle between the strip steel and the furnace roller, and the accuracy and reliability of the measurement result of the radiation thermometer are ensured.

This invention provides a method for producing a sintered body by accurately measuring the temperature of an unsintered body, and also provides a sintered body produced by the same method. [Solution] The sintered body 1 is obtained by sintering an unsintered body 1p having a cone-shaped or V-shaped recess 12 on its surface 11s. The method for producing the sintered body includes the steps of: forming an unsintered body 1p having a cone-shaped or V-shaped recess 12 on its surface 11s; and measuring the temperature of the apex 12t of the recess 12 of the formed unsintered body 1p using a radiation thermometer from the bottom side of the recess 12. The method for producing the sintered body includes the step of heating the unsintered body 1p based on the measured temperature to produce the sintered body 1.

The present invention relates to a polishing apparatus. The polishing apparatus includes a plurality of window members configured to transmit an infrared radiation, and a plurality of infrared radiation thermometers arranged below the window members and configured to measure a surface temperature of a substrate held by a polishing head.

The application provides a low-power radiation plate and application thereof, which comprises a heat preservation shell, the heat preservation shell is a cavity with an inner cavity, a radiation source material layer and a phase change material layer are sequentially arranged in the heat preservation shell from top to bottom, and resistance wires are arranged around the phase change material layer; the phase change material layer is used for latent heat energy storage, the resistance wires are used for assisting the latent heat energy storage of the phase change material layer, and the radiation source material layer is used for absorbing the energy of the phase change material layer and radiating. In the application, the low-power radiation plate can be normally used under the condition that the electric energy is not easily obtained, so that the radiation plate can be calibrated and detected by various radiation thermometers, and the low-power radiation plate has smaller energy consumption compared with the traditional radiation plate.

This invention discloses a device and method for synchronously testing the transient ignition temperature and reaction process of explosives, relating to the field of explosive testing technology. The key technical features include: a light gas gun; a magnetic velocity measurement system installed at the muzzle of the light gas gun; a protective target chamber with a fixed target plate inside, the sample to be tested being fixed at the center of the fixed target plate; a high-speed infrared radiation thermometer; a high-speed camera; an optical path integration system including a prism and / or a reflector; and a synchronous trigger connected to the magnetic velocity measurement system. This invention enables the synchronous, non-contact acquisition of the transient surface temperature history of explosives under high-speed impact loading and dynamic images of their ignition and combustion processes, thereby accurately determining the impact ignition temperature threshold of the explosive and revealing the correlation mechanism between the ignition process and temperature evolution.

To provide an induction heating flaw detection method and an induction heating flaw detection device capable of easily discriminating a flaw even if blackbody treatment is incomplete.SOLUTION: An induction heating flaw detection method includes an application step of applying a black body paint, a heating step of heating a surface of a conductive material by changing a relative position between the conductive material and an induction heating unit, an extraction step of extracting a high temperature portion by acquiring a surface temperature of the conductive material after the heating is finished by a radiation thermometer, a tracking step of tracking the high temperature portion, and a determination step of determining whether the high temperature portion is a flaw or a noise based on a temporal temperature change of the high temperature portion. The induction heating flaw detector includes an application unit that applies black body paint, an induction heating unit that heats a surface of a conductive material by changing a relative position with the conductive material, an extraction unit that extracts a high temperature portion by acquiring a surface temperature of the conductive material after heating by a radiation thermometer, a tracking unit that tracks the high temperature portion, and a determination unit that determines whether the high temperature portion is a flaw or a noise based on a temporal temperature change of the high temperature portion.SELECTED DRAWING: Figure 6

The invention provides a radiation thermometer calibration device and method. The radiation thermometer calibration device comprises a high-temperature black body source system, a rhenium-carbon eutectic crucible, a heat preservation grating structure and a displacement mechanism. The high-temperature blackbody source system comprises a temperature control system, a blackbody radiation source, a vacuum inflation system, a water cooling system and a data acquisition device. The temperature control system comprises a temperature control sensor and a heating device. The rhenium-carbon eutectic crucible is arranged in the center of an inner cavity of the blackbody radiation source, the two sides of the rhenium-carbon eutectic crucible are each provided with a heat preservation grating structure, the calibrated radiation thermometer is fixedly installed on the displacement mechanism, and the calibrated radiation thermometer and the temperature control sensor are arranged at inlets in the two sides of the inner cavity of the blackbody radiation source respectively. And the calibrated radiation thermometer is aligned with the aiming cavity of the rhenium-carbon eutectic crucible and is connected with the data acquisition equipment through a data line. The temperature rise curve is controlled to ensure that the eutectic point temperature plateau appears, the rhenium-carbon eutectic state is reproduced, it is ensured that fixed point absolute method calibration is achieved, and the possibility that the temperature plateau does not appear in the prior art is avoided.

The black body temperature calibrator comprises a graphite tube, a partition cavity bottom is arranged in the graphite tube, the graphite tube is divided into a first cavity and a second cavity by the partition cavity bottom, and both the first cavity and the second cavity are opened outwards; the two ends of the graphite pipe are connected with conductive metal blocks, and water circulation heat dissipation structures are arranged on the conductive metal blocks. The graphite pipe is sleeved with a quartz pipe, the two ends of the quartz pipe are connected with the water circulation heat dissipation structures on the corresponding sides in a sealed mode respectively, and a heat insulation cavity is defined by the quartz pipe, the graphite pipe and the water circulation heat dissipation structures. A first air inlet hole and a second air inlet hole are formed in the graphite pipe; a gas conveying pipe for conveying argon to the heat insulation cavity is arranged on the water circulation heat dissipation structure; a heat preservation structure is arranged between the graphite tube and the quartz tube; a standard radiation thermometer for monitoring the temperature of the bottom of the partition cavity is mounted at the opening of the first cavity; heat dissipation of the end part of the blackbody radiation source is realized to ensure that the temperature of a measured part meets test requirements.

An abnormality detection device for detecting a treatment abnormality in a semiconductor wafer to be heat-treated in a heat treatment apparatus is provided. The abnormality detection device includes a lower radiation thermometer for measuring a temperature of the semiconductor wafer being heat-treated, a treatment information acquisition part (sensors) for acquiring a plurality of pieces of treatment information having a correlation with the temperature measured by the lower radiation thermometer, and a detection part for dividing heat treatment of the semiconductor wafer into a plurality of phases (heat treatment phases F1 to F7) to detect a treatment abnormality in the semiconductor wafer, based on a plurality of learning models created for the respective phases (heat treatment phases F1 to F7), based on the temperature and the treatment information.