67 results about "Radiation thermometer" patented technology

The utility model relates to the technical field of temperature measurement, in particular to a radiation thermometer calibration device which comprises a box body, a control system and a radiation cavity are arranged in the box body, a black body radiation plate is arranged in the radiation cavity, a radiation window is arranged on the front side of the box body and communicated with the radiation cavity, a sealing cover is arranged on the radiation window, and a calibration interface is arranged on the sealing cover. The calibration interface is wrapped by an elastic silica gel pad, the control system comprises a controller, a temperature sensor and a power supply module, the power supply module is installed in the box body, and stable black body radiation and accurate temperature are ensured through a stable black body radiation plate and an accurate temperature control system, so that the calibration precision of the radiation thermometer is improved, and the calibration precision of the radiation thermometer is improved. A plurality of temperature sensors are arranged in the radiation cavity, temperature distribution is monitored in real time, temperature uniformity is ensured, calibration accuracy is further improved, a handle is hinged to the top of the box body, an elastic rubber mat is wrapped, friction and noise are reduced, and user experience is improved.

This invention discloses a calibration device for radiation thermometers and its usage method. The device includes a base with a movable seat on top. The base has several clamping holes for holding a temperature measuring gun, and the movable seat is located on one side of the clamping holes. Several telescopic cylinders are rotatably connected to the base, and telescopic rods are threaded into the internal parts of the telescopic cylinders. A slider is fixedly connected to each telescopic rod, and the slider is slidably connected to the base. The telescopic rods are located on one side of the clamping holes. This device is easy to operate, can calibrate multiple radiation thermometers, has a high degree of automation, and offers high calibration efficiency.

To enable a radiation thermometer to be calibrated easily in a short time without using a black body furnace.SOLUTION: A calibration system 25 is composed of an irradiation head 6 for radiating laser light, a radiation thermometer 7 for contactlessly measuring the temperature of a solder 20 for temperature measurement, a thermometer 15 for calibration which is installed to a soldering device, and a controller 10 to which a program for calibration is inputted. The thermometer 15 for calibration includes a body 16, a measurement chamber 17 formed on the upper surface of the body 16, the solder 20 for temperature measurement which is accommodated inside the measurement chamber 17, a temperature sensor 19 for directly measuring by contact the temperature of the solder 20 for temperature measurement, and a transparent and heat-resistant oxidation prevention glass 23 for preventing the oxidation of the solder 20 for temperature measurement by contact with the atmospheric air, with the solder 20 for temperature measurement adhered tightly without gaps to the underside of the oxidation prevention glass 23.SELECTED DRAWING: Figure 5

The utility model discloses a positioning device for calibration of an infrared radiation thermometer, belongs to the technical field of thermal instrument calibration, and solves the problem that errors exist during calibration of an existing infrared radiation thermometer. The positioning device comprises a workbench, a positioning frame used for containing the blackbody furnace is arranged on one side of the workbench, a positioning plate is arranged on one side of a temperature field area of the blackbody furnace, the positioning plate is installed on the blackbody furnace, a through circular hole is formed in the middle of the positioning plate, and a through hole is formed in the middle of the positioning plate. Oval holes communicated with the circular hole are formed in the positions, on the upper side and the lower side of the circular hole, of the positioning plate, a supporting plate used for placing an infrared radiation thermometer is arranged on the other side of the workbench, and two symmetrically-arranged clamping devices are arranged on the supporting plate. According to the positioning device for calibrating the infrared radiation thermometer, a calibrator can acquire data in the central area of a radiation source temperature field as much as possible in the operation process, and the standardization of calibration and the accuracy of numerical values are ensured.

To provide a radiation thermometer 100 capable of accurately measuring the temperature of a measuring object region Xa by surely eliminating the influence of a non-object even if the non-object other than the measuring object region exists in a measuring visual field.SOLUTION: This infrared sensor is provided with two infrared detection parts 1, 1' having a prescribed measurement visual field and detecting the quantity of infrared rays incident from the measurement visual field, and a temperature calculation part 2 for calculating the temperature of the measurement object area Xa based on the infrared quantities detected by the respective infrared detection parts 1, 1', and the measurement object area Xa is set so as to be included in the measurement visual fields of the respective infrared detection parts 1, 1' and the sizes of the respective measurement visual fields based on the measurement object area Xa are different from each other.SELECTED DRAWING: Figure 1

Even a radiation thermometer using a quantum-type infrared sensor can appropriately measure the temperature of the substrate after irradiation of the flash. The heat treatment apparatus is provided with a quantum-type infrared sensor for measuring the temperature of the first substrate and the temperature of the second substrate, and has a temperature correction section for correcting the temperature of the second substrate subjected to the second heat treatment with irradiation of the flash, measured by the quantum-type infrared sensor, using a correction coefficient calculated based on a reference temperature and an offset temperature.

The present invention provides a temperature measurement method that can accurately measure the surface temperature of a substrate even if the emissivity of both the front and back surfaces of the substrate is unknown. A wafer with a thermocouple mounted on its surface is heated using light from a halogen lamp, and the surface temperature of the wafer with the thermocouple is measured using the thermocouple, while the temperature of the back surface is measured using a back-side radiation thermometer. The emissivity set in the back-side radiation thermometer is corrected based on the temperature of the wafer with the thermocouple measured by the thermocouple. Next, a semiconductor wafer with a pattern formed on its surface is heated using light from a halogen lamp, and the temperatures of the back and surface of the semiconductor wafer are measured using a back-side radiation thermometer and a front-side radiation thermometer, respectively. The emissivity set in the front-side radiation thermometer is corrected based on the temperature of the semiconductor wafer measured by the back-side radiation thermometer.

The invention belongs to the technical field of glass manufacturing temperature monitoring, and relates to a small-aperture optical fiber infrared radiation thermometer and a use method thereof. Comprising an optical assembly used for collecting infrared radiation signals of a measured glass substrate through a small aperture; the input end of the optical fiber transmission unit is connected with the optical assembly; the optical fiber transmission unit is used for transmitting the infrared radiation signal; the input end of the infrared detection module is connected with the output end of the optical fiber transmission unit; the infrared detection module is used for converting the infrared radiation signal into an electric signal; the signal calibration module is connected with the infrared detection module; the signal calibration module is used for calibrating the electric signal to output an accurate temperature value; and the integrated mounting and fixing structure is used for bearing and fixing the optical component and mounting the optical component at the small aperture. According to the invention, high-precision and non-contact continuous monitoring of the temperature of the glass substrate is realized under complex working conditions.

To provide a temperature measurement system capable of acquiring a standardized temperature of a combustion chamber used for temperature control of a coke oven.SOLUTION: A temperature measurement system comprises: a two-color radiation thermometer that measures a temperature of a flue constituting a combustion chamber based on a ratio of spectral radiances at two different wavelengths acquired through an optical window provided in an observation hole above the combustion chamber of a coke oven; and a standardized temperature calculation device that calculates a standardized temperature of the combustion chamber. The standardized temperature calculation device includes: a measurement target identification unit that identifies the combustion chamber including the flue to be measured based on a measurement position by the two-color radiation thermometer; and a standardized temperature calculation unit that calculates the standardized temperature from a combustion switching time of the flue to be measured, a temperature of the flue measured by the two-color radiation thermometer, and a measurement time, using a temperature change formula representing a temperature of the flue that changes with time during combustion switching for switching over between a combustion-side flue and an exhaust-side flue of the combustion chamber, the temperature change formula being acquired in advance.SELECTED DRAWING: Figure 3

A radiation thermometer includes two infrared detectors and a temperature calculator. The infrared detectors each have a predetermined measurement visual field and detect the amount of infrared rays incident from the measurement visual field. The temperature calculator calculates the temperature of a measurement target region based on the amounts of infrared rays detected by the respective infrared detectors. The measurement target region is included in the measurement visual fields of the respective infrared detectors, and the sizes of the respective measurement visual fields are set to be different from each other with respect to the measurement target region.

The invention discloses an infrared radiation temperature measurement calibration method and system, the method can be applied to an infrared radiation calibration system, and the system can comprise black body equipment, an infrared radiation thermometer, a thermal insulation sleeve, a thermostatic bath and a processing device. The method comprises the following steps: sequentially sending M target temperatures to black body equipment, and sequentially sending N preset environment temperatures to a thermostatic bath at each target temperature; wherein M and N are integers greater than or equal to 1. And acquiring real-time environment temperatures and real-time light intensity voltage values acquired by the infrared radiation thermometer when the black body equipment is at different target temperatures and the thermal insulation sleeve is at different preset environment temperatures. And performing fitting processing on the M target temperatures, and the real-time environment temperatures and the real-time light intensity voltage values collected at different target temperatures and different preset environment temperatures based on a preset fitting algorithm to obtain a calibration coefficient. The objective of the invention is to solve the problem of low efficiency of manually setting a blackbody radiation source in an infrared radiation calibration mode.

To obtain a fine image without halation even in an object to be measured at a high temperature.SOLUTION: The radiation thermometer 1 is provided with an ND filter 7 whose transmissivity is set to 1-10% and which reduces the quantity of light due to thermal radiation from a measuring object, an IR cut filter 8 whose cut-off wavelength is set within a prescribed wavelength range including 650 nm and which cuts off light in a wavelength region equal to or higher than the cut-off wavelength from the light due to the thermal radiation from the measuring object and transmits only visible light, and a camera module 9 which receives the light transmitted through the ND filter 7 and the IR cut filter 8 and converts it into an electric signal and processes the electric signal converted by the CMOS sensor 9b to photograph an image of the light due to the thermal radiation from the measuring object.SELECTED DRAWING: Figure 1

This prevents incorrect correction values ​​from being set when using a radiation thermometer on a substrate processing device to control the temperature of a wafer. [Solution] The management device includes a registration unit that registers a correction table in which the instrument error data of each radiation temperature measuring instrument relative to a reference radiation temperature measuring instrument and information identifying each radiation temperature measuring instrument are associated, and a transmission unit that, when it receives a request for a correction table including information identifying the specific radiation temperature measuring instrument from a substrate processing device to which a specific radiation temperature measuring instrument is attached, transmits a correction table corresponding to the information identifying the specific radiation temperature measuring instrument to the requesting substrate processing device.

A cooling device (21) includes radiation thermometers (51 to 55), a plurality of nozzle parts, a plurality of electromagnetic valves (V1 to V5), and a control device (60). The radiation thermometers detect pre-cooling temperatures that are temperatures at a plurality of places on the mold before cooling water is sprayed from the plurality of nozzle parts to the mold. The control device individually sets a cooling time to each of the plurality of places on the mold based on a deviation between the pre-cooling temperature at the place on the mold and a target temperature and controls the electromagnetic valves based on the cooling times individually set to the plurality of respective places on the mold.

The invention provides an ion implantation apparatus which is provided with a radiation thermometer in a processing chamber and can accurately measure the temperature of a wafer in implantation processing. An ion implantation device (IM, IM2) is provided with: a processing chamber (1); a wafer conveyance mechanism (E) that linearly reciprocates the wafer (W) in the processing chamber (1) across a first non-irradiation region (R1), an irradiation region (R3), and a second non-irradiation region (R2) of the ion beam (IB); a case (2) disposed in either the first non-irradiation region (R1) or the second non-irradiation region (R2); a radiation thermometer (3) disposed in the atmospheric pressure space inside the housing (2); and a window (4) which is mounted on the case (2) and through which the infrared rays emitted from the wafer (W) pass.

This invention provides a liquid metal homogenizing blackbody furnace based on induction heating, belonging to the technical field of infrared radiation temperature measurement equipment. It includes a coaxial graphite tube, liquid metal, insulation material, a water-cooled coil, a temperature measuring device, and a high-frequency power control module. The coaxial graphite tube consists of an inner and outer graphite tube, forming an annular gap between them. The inner cavity of the inner graphite tube constitutes the blackbody cavity. The liquid metal fills the annular gap, generating eddy current heat under an alternating magnetic field. The insulation material covers the outer graphite tube. The water-cooled coil is wound around the outside of the insulation material. The temperature measuring device is attached to the wall of the coaxial graphite tube. The high-frequency power control module is electrically connected to the water-cooled coil to provide high-frequency current, causing it to generate an alternating magnetic field. This invention achieves high spatial temperature uniformity and long-term operational stability of the blackbody radiation cavity wall at high temperatures without relying on precise coil arrangement or mechanical motion compensation.

This invention provides a technique for measuring the temperature of a glass ribbon diagonally below a window in the side wall of a heat treatment furnace that houses a horizontal glass ribbon, when forming a glass ribbon using the float method. [Solution] The glass manufacturing method comprises rotating a top roll while pressing down on the widthwise end of the upper surface of a horizontal strip-shaped glass ribbon with the top roll. The glass manufacturing method comprises measuring the temperature of the widthwise end of the glass ribbon diagonally below the window through a window in the side wall of a heat treatment furnace that houses the horizontal glass ribbon using a radiation thermometer.

To provide a radiation thermometer capable of easily and accurately aligning a measurement range with a measurement target while achieving downsizing and improving the utilization efficiency of infrared radiation.SOLUTION: A laser reflection mirror 8 or a mirror central window 26a provided in an infrared reflection mirror 26 is positioned such that a light beam of an aiming laser light, once converged by a convex conical lens 6, becomes near the minimum diameter at the position of reflection of the laser reflection mirror 8 or transmission of the mirror central window 26a. The beam of the aiming laser light is diffusely reflected in a ring shape on the surface of a measurement target 10 so as to indicate the measurement range RM of infrared radiation emitted from the measurement target 10.SELECTED DRAWING: Figure 1

To provide a method for continuously measuring the temperature of molten iron in a blast furnace with which the accuracy of the continuous measurement of the molten iron temperature with a radiation thermometer can be improved, and to provide a method for operating the blast furnace.SOLUTION: In the method for continuously measuring the temperature of the molten iron in the blast furnace, the temperature of the molten iron discharged from a tapping hole in the blast furnace is continuously measured by using a radiation thermometer, and the temperature of the molten iron is measured by the radiation thermometer so as to reduce the effect of dust on the temperature of the molten iron measured by the radiation thermometer.SELECTED DRAWING: Figure 1

The present application provides a single crystal silicon manufacturing device (1), the single crystal silicon manufacturing device (1) has cavity (50), crucible (51), radiation thermometer (3), light source (5), adjusting device (4), the crucible (51) is arranged in cavity (50), the radiation thermometer (3) has the detecting element (16) of detecting the radiation light from the measured object, the lens (15) of converging radiation light to detecting element (16) and the viewfinder (17) for visually confirming measured object, the light source (5) supplies light to measured object along the axis line coinciding with the optical axis (A) of lens (15) via viewfinder (17) and lens (15), and the adjusting device (4) supports radiation thermometer (3) in the state that the measured position of radiation thermometer (3) can be adjusted.

The present invention provides a radiation thermometer that can be miniaturized and has a larger circuit scale. The radiation thermometer includes: an infrared sensor (2); a signal processing unit (4) for processing the signal of the infrared sensor (2); and a housing (5) for housing the infrared sensor (2) and the signal processing unit (4). The signal processing unit (4) is constructed by stacking multiple substrates (41-44) through spacers (45).

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

This biological data measurement device is provided with a substrate disposed at a position separated from a body surface (BS) by a predetermined distance via a support member made of a heat insulating material so as to generate an air layer between the substrate and the body surface of a living being to be measured. A thermometer including a radiation thermometer for measuring the body surface temperature and a substrate thermometer for measuring the substrate temperature of the substrate is provided on the substrate, so that the deep body temperature can be accurately measured.

To provide a technique capable of accurately measuring the surface temperature of a molded article made of a resin.SOLUTION: The mold device 1 includes a mold 2 having a molding space S into which a resin is injection-supplied and a first through-hole 16 penetrating between the molding space S and the outside, a radiation thermometer 4 having a light receiving surface 20a provided in the first through-hole 16 so as to face the molding space S side, and a metallic thin film member 30 provided in an opening portion 16a of the first through-hole 16 opened to the molding space S. The metallic thin film member 30 has a first surface 30a facing the forming space S and a second surface 30a opposite to the first surface 20a and facing the light receiving surface 30b.SELECTED DRAWING: Figure 1

The present invention relates to a welded wafer (18), a tube welding device (10), and a tube welding method. The welded wafer (18) includes a first substrate and a second substrate formed in a flat plate shape, a heating element formed between the inner surfaces of the first substrate and the second substrate, and a temperature measurement hole (44) that penetrates the second substrate in the thickness direction and exposes the inner surface of the first substrate. The internal temperature of the welded wafer (18) can be detected by the temperature measurement hole. It is ideal to detect the temperature of the wafer (18) by a non-contact sensor such as an infrared radiation thermometer (70). The wafer is advantageous for use in cutting and melting resin tubes for medical use and the like.

An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

An upper radiation thermometer is provided obliquely above a semiconductor wafer to be measured. The upper radiation thermometer includes a photovoltaic detector that produces an electromotive force when receiving light. The photovoltaic detector has both high-speed responsivity and good noise properties in a low-frequency range. The upper radiation thermometer does not require a mechanism for cooling because the photovoltaic detector is capable of obtaining sufficient sensitivity at room temperature without being cooled. There is no need to provide a light chopper and a differentiating circuit in the upper radiation thermometer. This allows the upper radiation thermometer to measure the front surface temperature of the semiconductor wafer with a simple configuration both during preheating by means of halogen lamps and during flash irradiation.

The application discloses an indoor body temperature sensing detection device and method, and relates to the technical field of indoor environment monitoring. The device comprises a sensing and collecting module, a central processing module and a terminal module. The sensing and collecting module comprises an air dry bulb temperature sensor, a relative humidity sensor, a breeze speed sensor and a black ball radiation thermometer. The parallel sensing array composed of the air dry bulb temperature sensor, the relative humidity sensor, the breeze speed sensor and the black ball radiation thermometer is arranged to synchronously acquire multi-dimensional basic physical parameters, thereby overcoming the defect that the traditional device only relies on single temperature and humidity, which causes the detection value to be disengaged from the real thermal perception of the human body. The physical isolation structure corresponding to the independent signal transmission cable of each sensor is welded, thereby avoiding channel crosstalk during the concurrent transmission of multiple signals and ensuring the signal integrity of the underlying original physical data.

To provide a heat treatment method and a heat treatment apparatus capable of preventing defects caused by performing flash light irradiation processing on a substrate that has not yet reached a target temperature.SOLUTION: A semiconductor wafer carried into a chamber is preliminarily heated by a halogen lamp. In the final stage of the preliminary heating by the halogen lamp, immediately before flash light irradiation, the target temperature for the preliminary heating is compared with a measured temperature of the semiconductor wafer measured by a radiation thermometer. When the measured temperature of the semiconductor wafer falls outside a preset allowable range relative to the target temperature, an alarm is issued and processing on the target semiconductor wafer is stopped without performing the flash light irradiation. On the other hand, when the measured temperature of the semiconductor wafer falls within the allowable range, flash light irradiation processing is performed on the semiconductor wafer.SELECTED DRAWING: Figure 9

A semiconductor manufacturing apparatus according to an embodiment includes: a chamber; a susceptor capable of placing a wafer; a rotary body that rotates the susceptor around a prescribed central axis; a first radiation thermometer disposed above the chamber that measures a temperature of a first temperature measurement position of the wafer; a second radiation thermometer disposed above the chamber adjacent to the first radiation thermometer that measures a temperature of a second temperature measurement position of the wafer; a first heater that heats a central region of the wafer and a second heater that heats an outer region of the wafer; and a control section that controls power applied to the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and shorter than 0.8 times a radius of the wafer.