Shower head structure and treating device

Abstract

A shower head structure characterized by comprising a shower head section, opposed to the upper surface of a mounting table in an evacuable treating vessel, for injecting a processing gas into the treating vessel; a temperature observation through-hole which opens in the lower surface of the shower head so as to be opposed to the upper surface of the mounting table, a transparent observation window which hermetically seals the upper end of the temperature observation through-hole, a radiation thermometer disposed on the upper surface of the transparent observation window, an adhesion preventive gas supply path communicating with the temperature observation through-hole to prevent a film from adhering to the transparent observation window, wherein the adhesion preventive gas supply path communicates with the temperature observation through-hole through an injection nozzle for injecting the adhesion preventive gas to the transparent observation window.

Description

[0001] This application is a Continuation Application of PCT International Application No. PCT / JP04 / 005172 filed on Apr. 9, 2004, which designated the United States.FIELD OF THE INVENTION [0002] The present invention relates to a shower head structure and a processing device for performing a heat treatment such as a film forming processing of, e.g., a metal oxide film, or an etching processing or the like, on an object to be processed such as a semiconductor wafer or the like. BACKGROUND OF THE INVENTION [0003] Generally, for producing a desired semiconductor device, a heat treatment such as a film forming processing or a pattern etching processing or the like is repeatedly performed on a semiconductor wafer. With a recent trend towards high-density and high-integration of a semiconductor device, a strict heat treatment method has been demanded. For example, for a very thin oxide film such as an insulating film of a capacitor or a gate insulating film in the device, the film is also...

AI Technical Summary

Benefits of technology

[0025] In accordance with still another aspect of the present invention, there is provided a shower head structure including: a shower head section provided to face a top surface of a mounting table in an evacuatable treating vessel; a multiplicity of gas injection holes, opened in a lower surface of the shower head section, for injecting a processing gas into the treating vessel; a temperature observation through hole opened in the lower surface of the shower head section to face the top surface of the mounting table; a transparent observation window for airtightly sealing an upper portion of the temperature observation through hole; a radiant thermometer provided at a top surface side of the transparent observation window; and an adhesion preventive gas supply path, communicating with the temperature observation through hole, for supplying thereinto an adhesion preventive gas, which prevents a film from being deposited on the transparent observation window, wherein a gas discharge passage, communicating with the temperature observation through hole, for discharging the adhesion preventive gas supplied from the adhesion preventive gas supply path into the temperature observation through hole, is installed.

[0026] In accordance with the present invention, a gas discharge passage for discharging the adhesion preventive gas supplied from the adhesion preventive gas supply path into the temperature observation through hole is installed, so that it is possible to effectively prevent the surface of the transparent observation window from making a contact with the processing gas, even though the flow rate of the adhesion preventive gas is small. Further, it is possible to remarkably suppress the adhesion preventive gas from affecting the processing on the object through the temperature observation through hole. For example, in case of a thin film forming processing on the surface of the object, in-surface uniformity in a film thickness can be maintained high.

Problems solved by technology

However, what the aforementioned thermocouple directly detects is the temperature of the mounting table, not that of the wafer as described above.

However, if a residual thin film is deposited to be adsorbed on a surface of a light detector of the radiant thermometer on which an incident light of specific wavelength band from the wafer is to be illuminated, the light is absorbed by the thin film, and therefore, the radiant thermometer cannot measure the temperature of the wafer accurately.

As a result, a film thickness of a portion, into which the nonreactive gas is introduced, is changed, so that uniformity in the film thickness of in-surface of the wafer becomes deteriorated.

Further, an increase in the amount of nonreactive gas to be used is problematic.

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