2results about How to "Improve surface uniformity" patented technology

A method of plasma etching a workpiece is disclosed. The method includes the steps of placing the workpiece on a substrate support within a plasma chamber, wherein the workpiece comprises a SiC substrate; introducing SF6, O2, and He process gases into the plasma chamber; plasma etching the SiC substrate by alternating between (i) applying a bias RF power to the substrate support to generate a reactive ion etch plasma in the plasma chamber and etching the SiC substrate at a first plasma chamber pressure for a first time period; and (ii) applying a source RF power to the plasma chamber to generate an inductively coupled plasma in the plasma chamber and applying a bias RF power to the substrate support, and etching the SiC substrate at a second plasma chamber pressure for a second time period, thereby reducing a surface roughness of the SiC substrate.

The utility model discloses a white pad for wafer rough polishing belongs to the technical field of polishing pad, a white pad for wafer rough polishing, including polishing pad layer, the upper end of polishing pad layer is provided with fluid storage pad, the upper end sealed coupling of fluid storage pad has base surface layer, the inside of fluid storage pad is provided with integrative fluid flow cavity, and the inside of fluid flow cavity has non - newtonian fluid layer. The utility model solves the problem that the existing wafer grinding pad in actual use process, and the partial buffer invalidation of polishing pad caused by the breakage of micro air bag will affect the continuity work, the non - newtonian fluid layer of the utility model in the grinding process, and the viscosity changes with the real - time change of pressure, shear rate, realizes adaptive buffer, reduces the wafer edge collapse response speed that partial stress concentration leads to, and the action of cooperation grinding particle can reduce partial leakage, and the surface uniformity is promoted.