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Method of making photosensitive lead salt thin film of infrared detector

An infrared detector, photosensitive lead salt technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effect of improving uniformity

Inactive Publication Date: 2008-04-30
CHINA AIR TO AIR MISSILE INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This doping process is the sensitization process

Method used

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  • Method of making photosensitive lead salt thin film of infrared detector
  • Method of making photosensitive lead salt thin film of infrared detector
  • Method of making photosensitive lead salt thin film of infrared detector

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preparation example Construction

[0040]figure 1 Shown is the precipitation device used in the preparation of infrared detector photosensitive lead salt thin film according to the present invention. The substrate 8 is placed on the sample holder 9, and it is placed in a reaction kettle filled with the reaction mother liquor during precipitation. The substrate is completely immersed in the reaction mother solution. The temperature controller 3 receives the temperature of the reaction mother liquid fed back by the thermometer 6, and controls the heater 2 to heat the reaction mother liquid according to the required heating rate and keep the temperature according to the required time. During the reaction process, the pH value of the reaction mother liquid is monitored by a pH meter 7 and adjusted and supplemented by manually or automatically adding corresponding mother liquid components as required; after the precipitation starts, the stirring controller 5 controls the agitator 4 to drive the stirrer 10 to make th...

Embodiment 1

[0046] A 36mmx25mm quartz substrate is used with a thickness of 3mm. PbS films were deposited by the hydrazine method. Heating adopts an electric heating plate furnace, and stirring adopts a magnetic stirrer. The stirring rate was 500 rpm. And the PbS multi-element (42 elements) short-wave infrared detector was prepared by using the film deposited in this example.

[0047] Prepare 200ml of 0.35M lead acetate solution, 110ml of 0.35M thiourea solution, 200ml of 15% hydrazine solution and 16ml of 12% glacial acetic acid. Heat the lead acetate solution to boiling, add 15ml of glacial acetic acid, and then gradually drop the hydrazine solution into the mixture. Fix the quartz substrate on the sample holder and put it into the prepared mixed solution. After 10 minutes of pre-seed crystal process, the temperature of the mixed solution is raised to 90 degrees and kept at a constant temperature for 90 minutes. In the middle of the constant temperature process, add the same concent...

Embodiment 2

[0055] A φ5mm K9 glass substrate with a thickness of 1mm is used. PbS thin films were deposited by high temperature method. The heating is heated by infrared lamps, and the steady-speed motor drives the stirring paddle to stir. The stirring rate was 100 rpm. A unitary PbS short-wave infrared detector was prepared by precipitation in this example, and the area of ​​the photosensitive element is 1.5 mm x 1.5 mm.

[0056] Prepare 150ml of lead acetate solution with concentration of 0.5M, 150ml of thiourea solution with concentration of 0.5M, and 100ml of NaOH solution with concentration of 50%. Mix thiourea with lead acetate solution, and add strong base (NaOH) dropwise. Fix the K9 glass substrate on the sample holder and put it into the prepared mixed solution. After 10 minutes of pre-seed crystallization process, the temperature of the mixed solution was kept constant at 22° C. for precipitation, and the precipitation time was 120 minutes. After the precipitation process i...

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Abstract

The invention relates to a method of preparing a photosensitive lead salt film of infrared detectors. Compared with the lead salt film prepared by the chemical deposition method, the invention comprises the steps of adopting a stirring method and supplements chemical mother liquid participating in reaction at right time in the preparation course and realizes the components spatial evenness of the prepared lead salt; adopting controllable large discharge gas mixture of nitrogen and oxygen to perform sensitizing treatment to the lead salt film and realizes the spatial evenness of the prepared lead salt film with photoelectrical response character. By practice test, the 25mm multiplies by 25mm PbS film prepared by the invention has the evenness of photoelectrical response more than 25 percent.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices. The scope involved includes semiconductor device preparation, thin film preparation, chemical deposition thin film, infrared photodetector and other technologies. Specifically, it refers to the preparation process of photosensitive film for infrared detectors sensitive to near-infrared (1-3μm) band. In this process, the photosensitive film is a lead salt film prepared by chemical precipitation method, and the type of infrared detector is photoconductive. Background technique [0002] According to different preparation methods, photosensitive thin films for infrared detectors can be divided into physical precipitation method and chemical precipitation method. Physical precipitation methods such as evaporation, sputtering, molecular beam epitaxy, etc., chemical precipitation methods such as chemical vapor deposition, liquid phase epitaxy, electrochemical deposition, chemical precipitation, et...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 司俊杰
Owner CHINA AIR TO AIR MISSILE INST
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