Method for correcting mask distribution pattern

Abstract

The invention provides a method to correct the mask layout, the layout including multiple cell patterns with different densities. It firstly carries out a detecting program, and according to the densities separates various component patterns into multiple kinds of cell patterns, and finally corrects various kinds of cell patterns, respectively.

Description

technical field [0001] The invention provides a method for correcting a mask layout, in particular a method for correcting a systematic error generated when a mask layout is transferred in a pattern. Background technique [0002] In order to form a designed integrated circuit (IC) on a semiconductor chip, a semiconductor foundry (semiconductor foundry) must first make a mask (mask), and form a designed layout (layout) pattern on the mask, and then The photolithography process transfers the pattern on the mask to the photoresist on the semiconductor chip at a certain ratio after exposure and development, and then uses the etching process to remove the area not covered by the photoresist on the semiconductor chip. Substances on the surface, such as silicon or silicon dioxide, are removed. Therefore, the pattern on the mask is first transferred to the photoresist and then to the semiconductor chip through two processes of photolithography and etching. T...

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Problems solved by technology

like figure 2 As shown, the etched line width w' of each element pattern on the mask layout diagram may be affected by microload or other system error factors, resulting in uneven etching. For example, the etched line width of each element pattern may vary with the line width The distance increases and increases, that is to say, the lower the pattern density, the more isolated linear pattern may obtain a larger line width after etching than the denser linear pattern.

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