Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

1172results about How to "Efficient conduction" patented technology

Jaw structure for electrosurgical instrument and method of use

An electrosurgical medical device and technique for creating thermal welds in engaged tissue that provides very high compressive forces. In one exemplary embodiment, at least one jaw of the instrument defines a tissue engagement plane carrying first and second surface portions that comprise (i) an electrically conductive material and (ii) a positive temperature coefficient (PTC) material having a selected increased resistance that differs at each selected increased temperature over a targeted treatment range. One type of PTC material is a doped ceramic that can be engineered to exhibit a selected positively sloped temperature-resistance curve over about 37° C. to 100° C. The 70° C. to 100° C. range can bracket a targeted “thermal treatment range” at which tissue welded can be accomplished. The engineered resistance of the PTC matrix at the upper end of the temperature range will terminate current flow through the matrix. In one mode of operation, the engagement plane cause ohmic heating within tissue from Rf energy delivery tissue PTC matrix is heated to exceed the treatment range. Thereafter, energy density in the engaged tissue will be modulated as the conductivity of the second portion hovers within the targeted treatment range to thereby provide optical tissue heating for purposes of tissue welding.
Owner:ETHICON ENDO SURGERY INC

One-step test device

An improved test device for the testing of a fluid having a cup and a cover lid, such cover lid having a reagent test strip chamber containing a reagent test strip, a fluid receipt chamber, a fluid channel containing a fluid-passing pad and a fluid contact chamber. An actuation cover with a window defined therein is positioned over the regent test strip chamber, fluid receipt chamber, fluid contact chamber, such window positioned over the color change area of the reagent test strip. The actuation cover forms a fluid-tight seal around a first end of the reagent test strip which protrudes into the fluid contact chamber. After the cup is filled with fluid and the cover lid is positioned thereon, the cup is inverted, causing fluid to flow into the fluid receipt chamber through an aperture in said cover lid. When the test device is turned upright, the fluid drains from the bottom of the fluid receipt chamber, through the pad, down the fluid channel and into the fluid contact chamber where it comes in contact with the protruding first end of the reagent test strip, such fluid to be drawn along the reagent test strip to accomplish the desired test to cause the appropriate color change to appear on such reagent test strip visible through the window in the actuation cover. An actuation button on the actuation cover can aid in some embodiments to draw fluid into the fluid receipt chamber. In other embodiments a valve, when actuated, can open the fluid receipt chamber to receive the fluid to be tested when the cup is inverted.
Owner:SAYLES PHILIP W

Clamp for holding and efficiently removing heat from workpieces

The invention described in this disclosure is an apparatus and method for clamping semiconductor wafers or other substrates or workpieces during etching, CVD, or surface modification processes. The purpose of the invention is to achieve improved heat transfer during processing between the wafer/substrate and a temperature controlled pedestal used for supporting it in the process chamber. The typical level of process heat put into the wafer during plasma-based etching or deposition processes will be up to about 10 Watts per centimeter squared while the maximum acceptable temperature differential between wafer/substrate and pedestal is less than about 100 Celsius. In such low gas pressure environments typical for plasma-based processes, the heat removal from the wafer/substrate by gaseous conduction may be inadequate to meet requirements. This invention achieves excellent heat transfer to the pedestal from the wafer/substrate when there is a thin, resilient, electrically insulating layer (tape) bonded to the wafer/substrate or the pedestal. Wafer/substrate clamping for improved process heat removal is achieved by a combination of vacuum clamping of the wafer/substrate beginning prior to evacuation of the processing chamber, along with or followed by electrostatic clamping of the wafer/substrate which continues during processing. The invention also permits the wafer/substrate to be rapidly and safely released from the electrostatic clamping when the chamber is returned to atmospheric pressure by a providing a slight pressure increase, above atmospheric pressure, between wafer and pedestal. The pedestal may have some roughening or narrow grooves on the wafer clamping surface, and some small holes from its surface leading to an evacuated plenum or channel within the pedestal. Alternatively, the pedestal may have a layer of a porous metal extending from its surface down to the evacuated channel or plenum which permits gas to be evacuated. These structures allow vacuum pumping of gas that might otherwise be trapped between the insulating layer and the pedestal. When a wafer/substrate is placed on the pedestal by loading at atmospheric pressure, vacuum pumping through the pedestal is commenced. This causes the workpiece to be pressed to the pedestal clamping surface with approximately atmospheric pressure compressing the soft layer against its clamping surface. This provides sufficient contact of the soft layer with the pedestal to greatly improve heat transfer from the wafer/substrate to the pedestal. A voltage is applied to the pedestal, beginning any time after the wafer is on the pedestal, to further clamp the wafer electrostatically. As the processing chamber is then pumped down to operating pressure for processing the electrostatic clamping voltage maintains sufficient pressure of the wafer/substrate against the pedestal to maintain the heat conductive contact between the soft layer and the pedestal. This permits good heat conduction to be maintained during the low pressure plasma-based etching or CVD processing. Following processing when the wafer/substrate is to be removed it may be rapidly de-clamped from the electrostatic clamping by application of a slight over-atmospheric pressure in the reservoir or pumping channels within the pedestal.
Owner:SAVAS STEPHEN EDWARD +1
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products